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The rapid expansion of the photovoltaic （PV） all market requires an abundant supply of silicon feedstock. A creative and simple three-layer method and apparatus have been developed for electrorefining of silicon for solar cell application. The anode is solidified from a hypereutectic solution of copper and metallurgical grade silicon. At the temperature of operation （950℃）, elements which have an electronegativity greater than that of silicon （e.g., Cu, B, P, etc.） will remain at the anode and then the Cu-Si phase can be used under certain conditions as a filter for purifying silicon with an electrorefining process. Two typical morphologies of deposit are found as coherent layer and osteoporosis layer, and deposited silicon particles with different grain size are found embedded in electrolyte. Furthermore, with increasing operation time and current density, re-combination of silicon particles is revealed which yields a larger-sized silicon ball of 1—2 cm in size. The analysis of the anode feed and refined silicon shows a remarkable reduction of B and P concentration, from 127 to 22 ppmw and 986 to 41 ppmw, respectively.
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Keywords:
- silicon /
- solar cell /
- electrorefining /
- directional solidification
[1] ［1］Chandra P K, David B, Joyce F S 2002 Sol. Energy Mater. Sol. Cell.74 77
[2] ［2］Richard M S 2006 Prog. Photovolt: Res. Appl. 14 443
[3] ［3］Alvin D C 2006 Sol. Energy Mater. Sol. Cell. 90 2170
[4] ［4］Zhang X D, Zhao Y, Gao Y T 2005 Acta Phys. Sin.54 4874 （in Chinese）［张晓丹、 赵颖、 高艳涛、 朱峰 2005 54 4874］
[5] ［5］Sun F H, Zhang X D, Wang G H, Xu S Z, Yue Q, Wei C C, Sun J, Geng X H, Xiong S Z, Zhao Y 2009 Acta Phys. Sin. 58 1293 （in Chinese）［孙福河、 张晓丹、 王光红、 许盛之、 岳强、 魏长春、 孙建、 耿新华、 熊绍珍、 赵颖 2009 58 1293］
[6] ［6］Ao J P, Yang L, Yan L, Sun G Z 2009 Acta Phys. Sin. 58 1870 （in Chinese）［敖建平、 杨亮、 闫礼、孙国忠 2009 58 1870］
[7] ［7］Zhang Z X, Wang E K 2000 Electrochemistry Principle and Method （Beijing: Science Press） p55［张祖训、 汪尔康 2000 电化学原理和方法 （北京: 科学出版社） 第55页］
[8] ［8］Monnier R, Barakat D U. S. patents 3219561 and 3254010
[9] ［9］Elwell D 1988 J. Appl. Electrochem . 8 15
[10] ］ Olson J M, Carleton K L 1981 J. Electrochem. Soc. 128 2698
[11] ］Yi J G, Lai Y Q, Tian Z L, Jia M, Yan J F, Liu Y X 2009 Supplemental Proceedings Volume 2: Materials Characterization, Computation and Modeling TMS 2009 Annual Meeting & Exhibition, 281
[12] ］ Wicks C E, Block F E 1963 Thermodynamic properties of 65 Elements\|their oxides, halides, carbides, and nitrides （Washington: United States Government Printing）
[13] ］ Rao G M, Elwell D, Feigelson R S 1980 J. Electrochem. Soc. 127 1940
[14] ］ Rao G M, Elwell D, Feigelson R S 1981 J. Electrochem. Soc. 128 1708
[15] ］ Sharma I G, Mukherjee T K 1986 Metall Trans B 17 395
[16] ］ Olson J M, Carleton K L 1984 U. S. patent 4448651
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[1] ［1］Chandra P K, David B, Joyce F S 2002 Sol. Energy Mater. Sol. Cell.74 77
[2] ［2］Richard M S 2006 Prog. Photovolt: Res. Appl. 14 443
[3] ［3］Alvin D C 2006 Sol. Energy Mater. Sol. Cell. 90 2170
[4] ［4］Zhang X D, Zhao Y, Gao Y T 2005 Acta Phys. Sin.54 4874 （in Chinese）［张晓丹、 赵颖、 高艳涛、 朱峰 2005 54 4874］
[5] ［5］Sun F H, Zhang X D, Wang G H, Xu S Z, Yue Q, Wei C C, Sun J, Geng X H, Xiong S Z, Zhao Y 2009 Acta Phys. Sin. 58 1293 （in Chinese）［孙福河、 张晓丹、 王光红、 许盛之、 岳强、 魏长春、 孙建、 耿新华、 熊绍珍、 赵颖 2009 58 1293］
[6] ［6］Ao J P, Yang L, Yan L, Sun G Z 2009 Acta Phys. Sin. 58 1870 （in Chinese）［敖建平、 杨亮、 闫礼、孙国忠 2009 58 1870］
[7] ［7］Zhang Z X, Wang E K 2000 Electrochemistry Principle and Method （Beijing: Science Press） p55［张祖训、 汪尔康 2000 电化学原理和方法 （北京: 科学出版社） 第55页］
[8] ［8］Monnier R, Barakat D U. S. patents 3219561 and 3254010
[9] ［9］Elwell D 1988 J. Appl. Electrochem . 8 15
[10] ］ Olson J M, Carleton K L 1981 J. Electrochem. Soc. 128 2698
[11] ］Yi J G, Lai Y Q, Tian Z L, Jia M, Yan J F, Liu Y X 2009 Supplemental Proceedings Volume 2: Materials Characterization, Computation and Modeling TMS 2009 Annual Meeting & Exhibition, 281
[12] ］ Wicks C E, Block F E 1963 Thermodynamic properties of 65 Elements\|their oxides, halides, carbides, and nitrides （Washington: United States Government Printing）
[13] ］ Rao G M, Elwell D, Feigelson R S 1980 J. Electrochem. Soc. 127 1940
[14] ］ Rao G M, Elwell D, Feigelson R S 1981 J. Electrochem. Soc. 128 1708
[15] ］ Sharma I G, Mukherjee T K 1986 Metall Trans B 17 395
[16] ］ Olson J M, Carleton K L 1984 U. S. patent 4448651
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