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Radiation detector of high performance was fabricated using free-standing thick CVD diamond films. The CVD diamond detector has “cross-finger” coplanar electrodes. The electrical contact between electrodes and diamond films is ohmic. The effective area is 3×3 mm2. When working under electric field strength of 30 kV/cm, the dark current of the detector is only about 01 nA, the rise time of the signal is about 590 ps, its sensitivity is about 110 mA/W. Besides, the detector has fairly good linearity on dose rate.
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Keywords:
- CVD diamond /
- radiation detector
[1] ［1］Bergonzo P, Brambilla A, Tromson D, Mer C, Guizard B, Foulon F 2000 Appl Surf. Sci. 154/155 179
[2] ［2］Pu R A, Fan R Y, Jin Y J, Liu L Y, Lü F X, Ou-Yang X P, Pan H B, Wang L, Zhang ZH B 2008 Chin. Phys. B 17 3644
[3] ［3］Liu J M, Shi W M, Su Q F, Wang L J, Xia Y B 2006 Acta Phys. Sin. 55 2518 （in Chinese）［刘健敏、史伟民、苏青峰、王林军、夏义本 2006 55 2518］
[4] ［4］Chen G CH, Fan R Y, Lü F X, Ou-Yang X P, Tang W ZH, Wang L, Wang W, Zhang ZH B 2006 Acta Phys. Sin. 55 2170 （in Chinese）［陈广超、范如玉、吕反修、欧阳晓平、唐伟忠、王兰、王伟、张忠兵 2006 55 2170］
[5] ［5］Ma H L, Liu Zh L1994 J. of Atomic and Molecular Physics 11 387 （in Chinese）［马洪良、刘忠礼 1994 原子与分子 11 387］
[6] ［6］Shockley W 1961 Solid-state electron 2 35
[7] ［7］The RD42 Collaboration, Friedl M, Adam W,Bauer C,Berdermann E, Bergonzo P, Bogani F, Borchi E, Brambilla A 1999 Nucl. Instrum. Meth. in Phys. Res. A 435 194
[8] ［8］Chen Zh M, Wang J N 1999 Basic Material Physics of Semi-conductor devices （Beijing: Science Press） p249 （in Chinese）［陈治明、王建农 1999 半导体器件的材料物理学基础（北京：科学出版社）第249页］
[9] ［9］Faggio G, Marinelli M, Messina G, Milani E, Paoletti A, Santangelo S, Rinati G V 1999 Microsystem Technologies 6 23
[10] ］Han S, Wagner R S, Gullikson E 1996 Nucl. Instrum. Meth. in Phys. Res. A 380 205
[11] ］Wang H B, Ma H L, Chen ZH L, Liu ZH L, Zheng ZH J, Tang D Y, Tian Z Z, Liu R H, Chen CH, Li J, Zhang J X 1995 Nuclear Electronics & Detection Technology 15 343 （in Chinese）［王红斌、马洪良、陈正林、刘忠礼、郑志坚、唐道源、田宗载、刘仁和、陈川、李君、张俊贤 1995 核电子学与探测技术15 343］
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[1] ［1］Bergonzo P, Brambilla A, Tromson D, Mer C, Guizard B, Foulon F 2000 Appl Surf. Sci. 154/155 179
[2] ［2］Pu R A, Fan R Y, Jin Y J, Liu L Y, Lü F X, Ou-Yang X P, Pan H B, Wang L, Zhang ZH B 2008 Chin. Phys. B 17 3644
[3] ［3］Liu J M, Shi W M, Su Q F, Wang L J, Xia Y B 2006 Acta Phys. Sin. 55 2518 （in Chinese）［刘健敏、史伟民、苏青峰、王林军、夏义本 2006 55 2518］
[4] ［4］Chen G CH, Fan R Y, Lü F X, Ou-Yang X P, Tang W ZH, Wang L, Wang W, Zhang ZH B 2006 Acta Phys. Sin. 55 2170 （in Chinese）［陈广超、范如玉、吕反修、欧阳晓平、唐伟忠、王兰、王伟、张忠兵 2006 55 2170］
[5] ［5］Ma H L, Liu Zh L1994 J. of Atomic and Molecular Physics 11 387 （in Chinese）［马洪良、刘忠礼 1994 原子与分子 11 387］
[6] ［6］Shockley W 1961 Solid-state electron 2 35
[7] ［7］The RD42 Collaboration, Friedl M, Adam W,Bauer C,Berdermann E, Bergonzo P, Bogani F, Borchi E, Brambilla A 1999 Nucl. Instrum. Meth. in Phys. Res. A 435 194
[8] ［8］Chen Zh M, Wang J N 1999 Basic Material Physics of Semi-conductor devices （Beijing: Science Press） p249 （in Chinese）［陈治明、王建农 1999 半导体器件的材料物理学基础（北京：科学出版社）第249页］
[9] ［9］Faggio G, Marinelli M, Messina G, Milani E, Paoletti A, Santangelo S, Rinati G V 1999 Microsystem Technologies 6 23
[10] ］Han S, Wagner R S, Gullikson E 1996 Nucl. Instrum. Meth. in Phys. Res. A 380 205
[11] ］Wang H B, Ma H L, Chen ZH L, Liu ZH L, Zheng ZH J, Tang D Y, Tian Z Z, Liu R H, Chen CH, Li J, Zhang J X 1995 Nuclear Electronics & Detection Technology 15 343 （in Chinese）［王红斌、马洪良、陈正林、刘忠礼、郑志坚、唐道源、田宗载、刘仁和、陈川、李君、张俊贤 1995 核电子学与探测技术15 343］
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