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持续光电导现象是影响多晶金刚石紫外探测器时间响应性能的一个不利因素,它的存在会大大延长探测器的响应时间.本文在微米晶金刚石薄膜上制备了叉指电极间距分别为20μm和30μm的紫外探测器(分别称为器件A和器件B),讨论了晶界对多晶金刚石紫外探测器时间响应性能的影响.结果表明,器件A和器件B均表现出持续光电导和光电导增益现象,并且器件B比器件A更显著.分析得出,晶界缺陷可能在金刚石带隙中引入一个浅能级并起少数载流子陷阱中心的作用,导致了探测器的持续光电导现象和高增益.相比器件A,器件B电极间具有更多的晶界数量,因此器件B表现出更为显著的持续光电导和更高的光电导增益.Persistent photoconductivity(PPC) is a deterring factor for the time response of ultraviolet photo-detectors made of polycrystalline diamond films. The existence of PPC can greatly prolong the response time of photo-detectors. In this paper, ultraviolet photo-detectors with interdigital electrode spacings of 20 μm and 30 μm(denoted as "device A" and "device B", respectively) are fabricated on microcrystalline diamond films, and the influences of grain boundary on time response of diamond ultraviolet photo-detectors are discussed. Results show that performances of PPC and photoconductive gain are present in the two photo-detectors, and the PPC is longer and the photoconductive gain is higher in device B than in device A. It is suggested that grain boundaries may induce a shallow level in the bandgap and act as minority carrier trapping centers, leading to PPC and high gain. There are more grain boundaries between the electrodes in device B than in device A, which hence explains the higher photoconductive gain and responsivity as well as more significant PPC in device B than in device A.
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Keywords:
- diamond ultraviolet photo-detector /
- grain boundary /
- persistent photoconductivity /
- photoconductive gain
[1] Balducci A, Marinelli M, Milani E, Morgada M E, Tucciarone A,Verona-Rinati G, Angelone M, Pillon M 2005 Appl. Phys. Lett.86 193509
[2] Liao M, Koide Y 2006 Appl. Phys. Lett. 89 113509
[3] Liao M, Alvarez J, Imura M, Koide Y 2007 Appl. Phys. Lett. 91163510
[4] Abbaschian R, Zhu H, Clarke C 2005 Diamond Relat. Mater. 141916
[5] Wang L J, Liu J M, Su Q S, Shi W M, Xia Y B 2006 Acta Phys.Sin. 55 2518(in Chinese)[ 王林军,刘健敏,苏青峰,史伟民,夏义本2006 55 2518]
[6] Chan S S, McKeag R D, Whitfield M D, Jackman R B 1996 Phys.Stat. Sol. A 154 445
[7] Salvatori S, Rossi M C, Galluzzi F2000 IEEE Trans. Electr. Dev.47 1334
[8] Pace E, Di Benedetto R, Scuderi S 2000 Diamond Relat. Mater. 9987
[9] Li X H, Guo W T, Chen X K, Wu G, Yang J P, Wang R, Cao S Z,Yu R 2007 Acta Phys. Sin. 56 7183(in Chinese)[李晓红,郭晚土,陈学康,吴敢,杨建平,王瑞,曹生珠,余荣 2007 56 7183]
[10] Jiang W, Ahn J, Xu F L, Liaw C Y, Chan Y C, Zhou Y, Lam Y L1998 Appl. Phys. Lett. 72 1131
[11] Chen G H, Zhang X W, Ji Y Y, Yan H 1997 Acta Phys. Sin. 461188(in Chinese)[陈光华,张兴旺,季亚英,严辉 1997 46 1188]
[12] Ashfold M N R, May P W, Rego C A, Everitt N M 1994 Chem.Soc. Rev. 23 21
[13] Xia Y, Sekiguchi T, Zhang W, Jiang X, Wu W, Yao T 2000 J.Cryst. Growth 213 328
[14] Liu E K, Zhu B S, Luo J S 2003 Physics of Semiconductor(6thEd)(Beijing: Publishing House of Electronics Industry)pp159–364(in Chinese)[刘恩科,朱秉升,罗晋升 2003 半导体物理学(第6版)(北京:电子工业出版社)第159–364页]
[15] Polyakov V I, Rukovishnikov A I, Rossukanyi N M, Ralchenko VG 2001 Diamond Relat. Mater. 10 593
[16] Sze S M, Ng K K 2006 Physics of Semiconductor Devices(3thEd)(Hoboken: John Wiley & Sons)pp42–789
[17] Polyakov V I, Rukovishnikov A I, Rossukanyi N M, PereverzevV G, Pimenov S M, Carlisle J A, Gruen D M, Loubnin E N 2003Diamond Relat. Mater. 12 1776
[18] Zhang Z H, Zhao D G, Sun Y P, Feng Z H, Shen X M, Zhang BS, Feng G, Zheng X H, Yang H 2003 Chin. J. Semicond. 24 34(inChinese)[张泽洪,赵德刚,孙元平,冯志宏,沈晓明,张宝顺,冯淦,郑新和,杨辉 2003 半导体学报 24 34]
[19] Chen H M, Chen Y F, Lee M C, Feng M S 1997 Phys. Rev. B 566942
[20] Reddy C V, Balakrishnan K, Okumura H, Yoshida S 1998 Appl.Phys. Lett. 73 244
[21] De Sio A, Achard J, Tallaire A, Sussmann R S, Collins A T, SilvaF, Pace E 2005 Appl. Phys. Lett. 86 213504
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[1] Balducci A, Marinelli M, Milani E, Morgada M E, Tucciarone A,Verona-Rinati G, Angelone M, Pillon M 2005 Appl. Phys. Lett.86 193509
[2] Liao M, Koide Y 2006 Appl. Phys. Lett. 89 113509
[3] Liao M, Alvarez J, Imura M, Koide Y 2007 Appl. Phys. Lett. 91163510
[4] Abbaschian R, Zhu H, Clarke C 2005 Diamond Relat. Mater. 141916
[5] Wang L J, Liu J M, Su Q S, Shi W M, Xia Y B 2006 Acta Phys.Sin. 55 2518(in Chinese)[ 王林军,刘健敏,苏青峰,史伟民,夏义本2006 55 2518]
[6] Chan S S, McKeag R D, Whitfield M D, Jackman R B 1996 Phys.Stat. Sol. A 154 445
[7] Salvatori S, Rossi M C, Galluzzi F2000 IEEE Trans. Electr. Dev.47 1334
[8] Pace E, Di Benedetto R, Scuderi S 2000 Diamond Relat. Mater. 9987
[9] Li X H, Guo W T, Chen X K, Wu G, Yang J P, Wang R, Cao S Z,Yu R 2007 Acta Phys. Sin. 56 7183(in Chinese)[李晓红,郭晚土,陈学康,吴敢,杨建平,王瑞,曹生珠,余荣 2007 56 7183]
[10] Jiang W, Ahn J, Xu F L, Liaw C Y, Chan Y C, Zhou Y, Lam Y L1998 Appl. Phys. Lett. 72 1131
[11] Chen G H, Zhang X W, Ji Y Y, Yan H 1997 Acta Phys. Sin. 461188(in Chinese)[陈光华,张兴旺,季亚英,严辉 1997 46 1188]
[12] Ashfold M N R, May P W, Rego C A, Everitt N M 1994 Chem.Soc. Rev. 23 21
[13] Xia Y, Sekiguchi T, Zhang W, Jiang X, Wu W, Yao T 2000 J.Cryst. Growth 213 328
[14] Liu E K, Zhu B S, Luo J S 2003 Physics of Semiconductor(6thEd)(Beijing: Publishing House of Electronics Industry)pp159–364(in Chinese)[刘恩科,朱秉升,罗晋升 2003 半导体物理学(第6版)(北京:电子工业出版社)第159–364页]
[15] Polyakov V I, Rukovishnikov A I, Rossukanyi N M, Ralchenko VG 2001 Diamond Relat. Mater. 10 593
[16] Sze S M, Ng K K 2006 Physics of Semiconductor Devices(3thEd)(Hoboken: John Wiley & Sons)pp42–789
[17] Polyakov V I, Rukovishnikov A I, Rossukanyi N M, PereverzevV G, Pimenov S M, Carlisle J A, Gruen D M, Loubnin E N 2003Diamond Relat. Mater. 12 1776
[18] Zhang Z H, Zhao D G, Sun Y P, Feng Z H, Shen X M, Zhang BS, Feng G, Zheng X H, Yang H 2003 Chin. J. Semicond. 24 34(inChinese)[张泽洪,赵德刚,孙元平,冯志宏,沈晓明,张宝顺,冯淦,郑新和,杨辉 2003 半导体学报 24 34]
[19] Chen H M, Chen Y F, Lee M C, Feng M S 1997 Phys. Rev. B 566942
[20] Reddy C V, Balakrishnan K, Okumura H, Yoshida S 1998 Appl.Phys. Lett. 73 244
[21] De Sio A, Achard J, Tallaire A, Sussmann R S, Collins A T, SilvaF, Pace E 2005 Appl. Phys. Lett. 86 213504
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