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Diamond has a wide band gap, high carrier mobility, and high thermal conductivity, thereby possessing great potential applications in high power, and high temperature electronics devices, and also inhigh temperature logic circuit. In this work, we fabricate a hydrogen terminated diamond metal-oxide-semiconductor field effect transistor (MOSFET) by using the atomic layer deposition grown Al2O3 as a gate dielectric and passivation layer. The device has a gate length and width of 4 μm and 50 μm, respectively. The device delivers a maximum output current of about 113.4 mA/mm at VGS of –6 V and an ultra-high on/off ratio of 109. In addition, we fabricate three resistors, respectively, with an interelectrode distance of 20, 80 and 160 μm, corresponding to the resistance value of 16.7, 69.5 and 136.4 kΩ, respectively. The logic inverter is realized by combining the MOSFET with the load resistance, and the characteristics of the logic inverter are demonstrated successfully, which indicates that the diamond MOSFET has great potential applications in future logic circuits.
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Keywords:
- diamond /
- filed effect transistor /
- logic inverter
[1] Wort C J H, Balmer R S 2008 Mater. Today 11 22
Google Scholar
[2] Baliga B J 1989 IEEE Electr. Device Lett. 10 455
Google Scholar
[3] Achard J, Silva F, Tallaire A, Bonnin X, Lombardi G, Hassouni K, Gicquel A 2007 J. Phys. D:Appl. Phys. 40 6175
Google Scholar
[4] Kasu M, Ueda K, Ye H, Yamauchi Y, Sasaki S, Makimoto T 2006 Diam. Relat. Mater. 15 783
Google Scholar
[5] Hirama K, Sato H, Harada Y, Yamamoto H, Kasu M 2012 IEEE Electr. Device Lett. 33 1111
Google Scholar
[6] Kawarada H, Tsuboi H, Naruo T, Yamada T, Xu D, Daicho A, Saito T, Hiraiwa A 2014 Appl. Phys. Lett. 105 4
Google Scholar
[7] Liu J, Yu H, Shao S, Tu J, Zhu X, Yuan X, Wei J, Chen L, Ye H, Li C 2020 Diam. Relat. Mater. 104 107750
Google Scholar
[8] Yu X X, Zhou J J, Qi C J, Cao Z Y, Kong Y C, Chen T S 2018 IEEE Electr. Device Lett. 39 1373
Google Scholar
[9] Ueda K, Kasu M, Yamauchi Y, Makimoto T, Schwitters M, Twitchen D J, Scarsbrook G A, Coe S E 2006 IEEE Electr. Device Lett. 27 570
Google Scholar
[10] Kitabayashi Y, Kudo T, Tsuboi H, Yamada T, Xu D, Shibata M, Matsumura D, Hayashi Y, Syamsul M, Inaba M, Hiraiwa A, Kawarada H 2017 IEEE Electr. Device Lett. 38 363
Google Scholar
[11] Imanishi S, Horikawa K, Oi N, Okubo S, Kageura T, Hiraiwa A, Kawarada H 2019 IEEE Electr. Device Lett. 40 279
Google Scholar
[12] Russell S A O, Sharabi S, Tallaire A, Moran D A J 2012 IEEE Electr. Device Lett. 33 1471
Google Scholar
[13] Kasu M, Ueda K, Ye H, Yamauchi Y, Sasaki S, Makimoto T 2005 IEEE Electr. Device Lett. 41 1249
Google Scholar
[14] Ren Z Y, Yuan G S, Zhang J F, Xu L, Zhang J C, Chen W J, Hao Y 2018 Aip. Adv. 8 6
Google Scholar
[15] Daicho A, Saito T, Kurihara S, Hiraiwa A, Kawarada H 2014 J. Appl. Phys. 115 4
Google Scholar
[16] Wang Y F, Chang X, Zhang X, Fu J, Fan S, Bu R, Zhang J, Wang W, Wang H X, Wang J 2018 Diam. Relat. Mater. 81 113
Google Scholar
[17] Ren Z, Lv D, Xu J, Zhang J, Zhang J, Su K, Zhang C, Hao Y 2020 Appl. Phys. Lett. 116 013503
Google Scholar
[18] Liu J W, Liao M Y, Imura M, Watanabe E, Oosato H, Koide Y 2014 Appl. Phys. Lett. 105 082110
Google Scholar
[19] Liu J W, Oosato H, Liao M Y, Imura M, Watanabe E, Koide Y 2018 Appl. Phys. Lett. 112 153501
Google Scholar
[20] Liu J, Ohsato H, Liao M, Imura M, Watanabe E, Koide Y 2017 IEEE Electr. Device. Lett. 38 922
Google Scholar
[21] Wang J J, He Z Z, Yu C, Song X B, Xu P, Zhang P W, Guo H, Liu J L, Li C M, Cai S J, Feng Z H 2014 Diam. Relat. Mater. 43 43
Google Scholar
[22] Ren Z, Zhang J, Zhang J, Zhang C, Xu S, Li Y, Hao Y 2017 IEEE Electr. Device Lett. 38 786
Google Scholar
[23] Yamaguchi T, Umezawa H, Ohmagari S, Koizumi H, Kaneko J H 2021 Appl. Phys. Lett. 118 162105
Google Scholar
[24] Inaba M, Muta T, Kobayashi M, Saito T, Shibata M, Matsumura D, Kudo T, Hiraiwa A, Kawarada H 2016 Appl. Phys. Lett. 109 033503
Google Scholar
[25] Kawarada H, Yamada T, Xu D, Kitabayashi Y, Shibata M, Matsumura D, Kobayashi M, Saito T, Kudo T, Inaba M, Hiraiwa A, Ieee. 2016 Diamond MOSFETs using 2D Hole Gas with 1700 V Breakdown Voltage. (New York: Ieee) p483
[26] Syamsul M, Kitabayashi Y, Kudo T, Matsumura D, Kawarada H 2017 IEEE Electr. Device. Lett. 38 607
Google Scholar
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图 1 实验制备器件的原理图 (a) 剖面图; (b) 俯视图
Figure 1. Schematic diagram of the device structure: (a) Sectional view; (b) top view.
图 2 器件负载电阻 (a) I-V特性; (b) R1, R2, R3电阻阻值
Figure 2. The load resistance of device: (a) I-V relationships; (b) resistance values for the R1, R2 and R3 resistors.
图 3 氢终端金刚石MOSFET器件输出特性
Figure 3. Output characteristics of the hydrogen-terminated diamond (H-diamond) MOSFET.
图 4 氢终端金刚石MOSFET器件传输特性
Figure 4. Transfer characteristics of the H-diamond MOSFET.
图 5 不同负载电阻的逻辑反相器的电压传输特性
Figure 5. The voltage transfer characteristics of the logic inverter with the various load resistors.
图 6 反相器不同负载电阻情况下增益与输入电压的关系
Figure 6. Relationship between Vin and the gain of the inverter under different load resistances.
图 7 (a)恒流区器件输出电压变化; (b)可变电阻区器件输出电压变化
Figure 7. (a) Output voltage variation in saturation area; (b) output voltage variation in variable resistance area.
表 1 不同条件沉积的Al2O3介质的氢终端金刚石MOSFET器件的最大输出电流密度
Table 1. Summarization of the characterization of the H-diamond MOSFETs with the different temperatures grown Al2O3 as gate dielectrics.
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[1] Wort C J H, Balmer R S 2008 Mater. Today 11 22
Google Scholar
[2] Baliga B J 1989 IEEE Electr. Device Lett. 10 455
Google Scholar
[3] Achard J, Silva F, Tallaire A, Bonnin X, Lombardi G, Hassouni K, Gicquel A 2007 J. Phys. D:Appl. Phys. 40 6175
Google Scholar
[4] Kasu M, Ueda K, Ye H, Yamauchi Y, Sasaki S, Makimoto T 2006 Diam. Relat. Mater. 15 783
Google Scholar
[5] Hirama K, Sato H, Harada Y, Yamamoto H, Kasu M 2012 IEEE Electr. Device Lett. 33 1111
Google Scholar
[6] Kawarada H, Tsuboi H, Naruo T, Yamada T, Xu D, Daicho A, Saito T, Hiraiwa A 2014 Appl. Phys. Lett. 105 4
Google Scholar
[7] Liu J, Yu H, Shao S, Tu J, Zhu X, Yuan X, Wei J, Chen L, Ye H, Li C 2020 Diam. Relat. Mater. 104 107750
Google Scholar
[8] Yu X X, Zhou J J, Qi C J, Cao Z Y, Kong Y C, Chen T S 2018 IEEE Electr. Device Lett. 39 1373
Google Scholar
[9] Ueda K, Kasu M, Yamauchi Y, Makimoto T, Schwitters M, Twitchen D J, Scarsbrook G A, Coe S E 2006 IEEE Electr. Device Lett. 27 570
Google Scholar
[10] Kitabayashi Y, Kudo T, Tsuboi H, Yamada T, Xu D, Shibata M, Matsumura D, Hayashi Y, Syamsul M, Inaba M, Hiraiwa A, Kawarada H 2017 IEEE Electr. Device Lett. 38 363
Google Scholar
[11] Imanishi S, Horikawa K, Oi N, Okubo S, Kageura T, Hiraiwa A, Kawarada H 2019 IEEE Electr. Device Lett. 40 279
Google Scholar
[12] Russell S A O, Sharabi S, Tallaire A, Moran D A J 2012 IEEE Electr. Device Lett. 33 1471
Google Scholar
[13] Kasu M, Ueda K, Ye H, Yamauchi Y, Sasaki S, Makimoto T 2005 IEEE Electr. Device Lett. 41 1249
Google Scholar
[14] Ren Z Y, Yuan G S, Zhang J F, Xu L, Zhang J C, Chen W J, Hao Y 2018 Aip. Adv. 8 6
Google Scholar
[15] Daicho A, Saito T, Kurihara S, Hiraiwa A, Kawarada H 2014 J. Appl. Phys. 115 4
Google Scholar
[16] Wang Y F, Chang X, Zhang X, Fu J, Fan S, Bu R, Zhang J, Wang W, Wang H X, Wang J 2018 Diam. Relat. Mater. 81 113
Google Scholar
[17] Ren Z, Lv D, Xu J, Zhang J, Zhang J, Su K, Zhang C, Hao Y 2020 Appl. Phys. Lett. 116 013503
Google Scholar
[18] Liu J W, Liao M Y, Imura M, Watanabe E, Oosato H, Koide Y 2014 Appl. Phys. Lett. 105 082110
Google Scholar
[19] Liu J W, Oosato H, Liao M Y, Imura M, Watanabe E, Koide Y 2018 Appl. Phys. Lett. 112 153501
Google Scholar
[20] Liu J, Ohsato H, Liao M, Imura M, Watanabe E, Koide Y 2017 IEEE Electr. Device. Lett. 38 922
Google Scholar
[21] Wang J J, He Z Z, Yu C, Song X B, Xu P, Zhang P W, Guo H, Liu J L, Li C M, Cai S J, Feng Z H 2014 Diam. Relat. Mater. 43 43
Google Scholar
[22] Ren Z, Zhang J, Zhang J, Zhang C, Xu S, Li Y, Hao Y 2017 IEEE Electr. Device Lett. 38 786
Google Scholar
[23] Yamaguchi T, Umezawa H, Ohmagari S, Koizumi H, Kaneko J H 2021 Appl. Phys. Lett. 118 162105
Google Scholar
[24] Inaba M, Muta T, Kobayashi M, Saito T, Shibata M, Matsumura D, Kudo T, Hiraiwa A, Kawarada H 2016 Appl. Phys. Lett. 109 033503
Google Scholar
[25] Kawarada H, Yamada T, Xu D, Kitabayashi Y, Shibata M, Matsumura D, Kobayashi M, Saito T, Kudo T, Inaba M, Hiraiwa A, Ieee. 2016 Diamond MOSFETs using 2D Hole Gas with 1700 V Breakdown Voltage. (New York: Ieee) p483
[26] Syamsul M, Kitabayashi Y, Kudo T, Matsumura D, Kawarada H 2017 IEEE Electr. Device. Lett. 38 607
Google Scholar
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