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Zhou Xin-Miao, Zhang Bo-Ya, Chen Li, Li Xing-Wen. Simulation of effect of metal particles on breakdown process of three-electrode gas spark switches. Acta Physica Sinica,
2024, 73(1): 015202.
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Sun Qiang, Zhou Qian-Hong, Song Meng-Meng, Yang Wei, Dong Ye. Theoretical and numerical study on breakdown mechanism of nitrogen spark switch. Acta Physica Sinica,
2021, 70(1): 015202.
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Wang Hong-Guang, Liu Peng-Fei, Zhang Jian-Wei, Li Yong-Dong, Cao Yi-Bing, Sun Jun. Particle-in-cell simulation on effect of collector outgassing on relativistic backward oscillator. Acta Physica Sinica,
2019, 68(18): 185203.
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Gui Huai-Meng, Shi Wei. Time jitter characteristics of GaAs photoconductive semiconductor switch in linear mode. Acta Physica Sinica,
2018, 67(18): 184207.
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Ma Chao, Min Dao-Min, Li Sheng-Tao, Zheng Xu, Li Xi-Yu, Min Chao, Zhan Hai-Xia. Trap distribution and direct current breakdown characteristics in polypropylene/Al2O3 nanodielectrics. Acta Physica Sinica,
2017, 66(6): 067701.
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Liu Yi, Yang Jia, Li Xing, Gu Wei, Gao Zhi-Peng. Resistance of Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3 under high voltage microsecond pulse induced breakdown. Acta Physica Sinica,
2017, 66(11): 117701.
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Zhang Li, Lin Zhi-Yu, Luo Jun, Wang Shu-Long, Zhang Jin-Cheng, Hao Yue, Dai Yang, Chen Da-Zheng, Guo Li-Xin. High breakdown voltage lateral AlGaN/GaN high electron mobility transistor with p-GaN islands buried buffer layer for power applications. Acta Physica Sinica,
2017, 66(24): 247302.
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Li Shuang, Chang Chao, Wang Jian-Guo, Liu Yan-Sheng, Zhu Meng, Guo Le-Tian, Xie Jia-Ling. Suppression of secondary electron multipactor on dielectric surface in TM mode. Acta Physica Sinica,
2015, 64(13): 137701.
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2010, 59(8): 5700-5705.
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Shi Wei, Qu Guang-Hui, Wang Xin-Mei. Ultrafast rising of output electric impulse of lock-on model of semi-insulated GaAs photoconductive switches. Acta Physica Sinica,
2009, 58(1): 477-481.
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Shi Wei, Xue Hong, Ma Xiang-Rong. Characteristics of photoconductivity oscillation in semi-insulating GaAs photoconductive semiconductor switches. Acta Physica Sinica,
2009, 58(12): 8554-8559.
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2007, 56(7): 3845-3850.
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Shi Wei, Jia Wan-Li, Ji Wei-Li, Liu Kai. Monte Carlo simulation of operating modes of semi-insulting GaAs photoconductive switches. Acta Physica Sinica,
2007, 56(11): 6334-6339.
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Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min. Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica,
2007, 56(7): 4117-4121.
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Jia Wan-Li, Ji Wei-Li, Shi Wei. Two-dimensional Monte Carlo simulation of screening of the bias field in terahertz generation from semi-insulated GaAs photoconductors. Acta Physica Sinica,
2007, 56(4): 2042-2046.
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Qu Guang-Hui, Shi Wei. Inductive current and conductive current in photoconductor switches. Acta Physica Sinica,
2006, 55(11): 6068-6072.
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Li Xiao-Wei, Li Xin-Zheng, Jiang Xiao-Li, Yu Wei, Tian Xiao-Dong, Yang Shao-Peng, Fu Guang-Sheng. The electron trap effect of the sulfur + gold sensitization center on the photoelectron behaviors. Acta Physica Sinica,
2004, 53(6): 2019-2023.
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2004, 53(6): 1716-1720.
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