Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxy

Wang Lai; Zhang Xian-Peng; Xi Guang-Yi; Zhao Wei; Li Hong-Tao; Jiang Yang; Han Yan-Jun; Luo Yi

doi:10.7498/aps.57.5923

Abstract
Electrical properties of n-GaN grown at 740℃ and 900℃ by metal-organic vapor phase epitaxy were studied in detail. According to the electrochemical capacitance-voltage measurement, it is helpful to reduce the background impurity concentration in unintendedly-doped n-GaN grown at low temperature using TEGa as Ga precursor rather than TMGa. The results of Hall effect measurement of heavily Si-doped n-GaN show that, as Si concentration increases, the electron concentration increases almost linearly, which exhibits the dopant band conducting effect, while the electron mobility decreases. Atomic force microscope and X-ray diffraction measurements show that the surface morphology and crystal quality of most samples were determined by growth temperature and Si doping level. The surface morphology of all samples had a visible change only when the doping level was much higher at the same growth temperature. On the other hand, after the samples were annealed in oxygen, the electron mobility of all the samples remained almost constant, but the electron concentration decreased when the Si concentration was larger than 6×1019 cm-3. This result indicates that in the heavily Si-doped n-GaN grown at low temperature, the annealing process could result in the formation of acceptors due to the replacement of N by Si atoms.

Keywords:
n-GaN /

electron concentration /

mobility
Authors and contacts
Wang Lai,

Zhang Xian-Peng,

Xi Guang-Yi,

Zhao Wei,

Li Hong-Tao,

Jiang Yang,

Han Yan-Jun,

Luo Yi

1.
集成光电子学国家重点实验室,清华信息科学与技术国家实验室，清华大学电子工程系，北京 100084
References

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Vol. 57, Issue 9 - 2008-05-05

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Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxy

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