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电子浓度是与金属的宏观特性相关的重要参数.反射光谱和霍尔效应分别是得出电子浓度和载流子浓度的基本实验.两个纳米稀土金属铥Tm样品(样品1,平均粒径100nm,样品2,平均粒径10nm)的红外紫外反射光谱实验表明,金属铥Tm表面的反射光学性质具有金属的特征,6s能带具有与碱金属相近的电子浓度np,数值分别为2.4341028/m3和1.7011028/m3.而样品的霍尔效应实验测得金属Tm的载流子是电子-空穴型的,载流子浓度nH仅分别为8.0321024/m3和7.6791024/m3,仅仅是费米面附近的电子-空穴状态.另外,铥Tm的电导率比半导体的大3个量级.晶粒纳米化使电子浓度np减小,电导率减小,载流子浓度减小,而霍尔系数RH增大.Electron density is an important parameter for the macroscopic properties of metal. The reflectance spectrum measurement and the Hall Effect measurement are basic experiments for obtaining electron density and carrier density. Two samples (sample 1:100 nm, sample 2:10 nm) of nanostructure block rare earth metal Tm are studied. Their reflectivity spectra show that the surface reflection of Tm metal possess metallic optical properties in a region of infrared-ultraviolet, the electronic densities np of 6s band are 2.434 1028/m3 and 1.7011028/m3 similar to that of alkali. The carriers measured by Hall Effect experiment are of cavity tipe in the two samples, and the carrier densities nH are 8.0321024/m3 and 7.6791024/m3 respectively. They are only states near the Fermi surface. In addition, the conductance of Tm block is three orders of magnitude higher than one of semiconductor. The grain nanostructurization makes electronic density np, conductance , and carrier density nH decrease, but Hall coefficient RH increase.
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Keywords:
- nanostructure metal Tm /
- electronic density /
- spectrum reflectance of infrared-ultraviolet /
- Hall effect
[1] Ashcroft Neil W, David M N 1976 Solid State Physics (New York:Holt, Rinehart and Winston ) a: p14, b: p18, c:p4, d:p5,e:p36
[2] Hou B H, Liu F Y, Yue M, Wang K J 2011 Acta Phys. Sin. 60 017201 (in Chinese) [侯碧辉, 刘凤艳, 岳明, 王克军 2011 60 017201]
[3] Zhang X L, Wang Y Z, Li L, Ju Y L 2007 Acta Phys. Sin. 56 2196(in Chinese) [张新陆, 王月珠, 李 立, 鞠有伦 2007 56 2196]
[4] Yue M, Zhang J X, Zeng H, Wang K J 2006 Appl. Phys. Lett. 89 232504
[5] Richards D B, Legvold S 1969 Phys. Rev. 186 508
[6] Yue M, Liu W Q, Zhang D T, Liu Y Q, Zhang J X 2004 Journal of Functional Materials and Devices 10 318 (in Chinese) [岳明, 刘卫强, 张东涛, 刘燕琴, 张久兴 2004 功能材料与器件学报 10 318]
[7] Charles Kittel 2005 Introduction to solid state physics eight edition (John Wiley &Sons, Inc), a:p20, b:p139, c:p155, d: p399
[8] Liang Y C, Zhang Y, Guo W L, Yao Y G, Fang Z 2007 Physics 36 385 (in Chinese) [梁拥成, 张英, 郭万林, 姚裕贵, 方忠 2007 物理 36 385]
[9] Shuishi Iida, Zhang Z X, translated 1979 The Tables of the Physics Numerals (Science press) a: p141, b: p131, c: p133 (in Chinese) [饭田修一等编, 张质贤等译, 1979 物理学常用数表 (科学出版社) a: p141, b: p131, c: p133.]
[10] Li H L, Ruan K Q, Li S Y, Mo W Q, Fan R, Luo X G,Chen X H,Cao L Z 2001 Acta Phys. Sin. 50 2044 (in Chinese)[李慧玲, 阮可青, 李世燕, 莫维勤, 樊荣, 罗习刚, 陈仙辉, 曹烈兆 2001 50 2044]
[11] Colvin R V, Sam Legvold, Spedding F H 1960 Phys. Rev. 120 741
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[1] Ashcroft Neil W, David M N 1976 Solid State Physics (New York:Holt, Rinehart and Winston ) a: p14, b: p18, c:p4, d:p5,e:p36
[2] Hou B H, Liu F Y, Yue M, Wang K J 2011 Acta Phys. Sin. 60 017201 (in Chinese) [侯碧辉, 刘凤艳, 岳明, 王克军 2011 60 017201]
[3] Zhang X L, Wang Y Z, Li L, Ju Y L 2007 Acta Phys. Sin. 56 2196(in Chinese) [张新陆, 王月珠, 李 立, 鞠有伦 2007 56 2196]
[4] Yue M, Zhang J X, Zeng H, Wang K J 2006 Appl. Phys. Lett. 89 232504
[5] Richards D B, Legvold S 1969 Phys. Rev. 186 508
[6] Yue M, Liu W Q, Zhang D T, Liu Y Q, Zhang J X 2004 Journal of Functional Materials and Devices 10 318 (in Chinese) [岳明, 刘卫强, 张东涛, 刘燕琴, 张久兴 2004 功能材料与器件学报 10 318]
[7] Charles Kittel 2005 Introduction to solid state physics eight edition (John Wiley &Sons, Inc), a:p20, b:p139, c:p155, d: p399
[8] Liang Y C, Zhang Y, Guo W L, Yao Y G, Fang Z 2007 Physics 36 385 (in Chinese) [梁拥成, 张英, 郭万林, 姚裕贵, 方忠 2007 物理 36 385]
[9] Shuishi Iida, Zhang Z X, translated 1979 The Tables of the Physics Numerals (Science press) a: p141, b: p131, c: p133 (in Chinese) [饭田修一等编, 张质贤等译, 1979 物理学常用数表 (科学出版社) a: p141, b: p131, c: p133.]
[10] Li H L, Ruan K Q, Li S Y, Mo W Q, Fan R, Luo X G,Chen X H,Cao L Z 2001 Acta Phys. Sin. 50 2044 (in Chinese)[李慧玲, 阮可青, 李世燕, 莫维勤, 樊荣, 罗习刚, 陈仙辉, 曹烈兆 2001 50 2044]
[11] Colvin R V, Sam Legvold, Spedding F H 1960 Phys. Rev. 120 741
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