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Blocked impurity band (BIB) detectors, developed from extrinsic detectors, have long been employed for ground-based and airborne astronomical imaging and photon detections. They are the state-of-the-art choice for highly sensitive detection from mid-infrared to far-infrared radiation. In this work, we demonstrate the existence of an interfacial barrier in blocked impurity band structures by evidence of temperature-dependent dark currents, bias-dependent photocurrent spectra and corresponding theoretical calculations. The origin of the build-in field is studied. The temperature-dependent characteristics of space charge effects are also investigated in detail. It is found that at higher temperature (T 14 K), the space charge influence is negligible, and the interfacial barrier is mainly caused by bandgap narrowing effects. Based on interfacial barrier effects, a dual-excitation model is proposed to clarify the band structure of BIB detectors. The photocurrent spectra related to the two excitation processes, i.e., the direct excitation over the interfacial barrier and excitation to the band edge with subquent tunneling into blocking layer, are successfully extracted and agree reasonably well with the calculated band structure results. The effects of interfacial barrier on the photocurrent spectrum, peak responsivity and internal quantum efficiency of the devices are investigated. With the consideration of interfacial barrier effects, the calculated peak responsivity shows good agreement with the experimental result. It is suggested that interfacial barrier effects should be considered for successfully designing the BIB detectors. Additionally, the build-in field is found to equivalently lower the critical field for impact ionization. This study provides a better understanding of the working mechanism in BIB detectors and also a better device optimization.
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Keywords:
- interfacial barrier /
- blocked impurity band detectors /
- photocurrent spectra /
- dark current
[1] Al-Naib I, Hebestreit E, Rockstuhl C, Lederer F, Christodoulides D, Ozaki T, Morandotti R 2014 Phys. Rev. Lett. 112 183903
[2] Rogalski A, Sizov F 2011 Opto-Electron. Rev. 19 346
[3] Hu W D, Yin F, Ye Z H, Quan Z J, Hu X N, Li Z F, Chen X S, Lu W 2009 Acta Phys. Sin. 58 7891 (in Chinese) [胡伟达, 殷菲, 叶振华, 全知觉, 胡晓宁, 李志锋, 陈效双, 陆卫 2009 58 7891]
[4] Liao K S, Liu X H, Huang L, Li Z F, Li N, Dai N 2014 Sci. Sin. : Phys. Mesh. Astron. 44 360 (in Chinese) [廖开升, 刘希辉, 黄亮, 李志锋, 李宁, 戴宁 2014 中国科学: 物理学 力学 天文学 44 360]
[5] Zhu H, Zhang B P, Wang M, Hu G J, Dai N, Wu H Z 2014 Acta Phys. Sin 63 136803 (in Chinese) [朱贺, 张兵坡, 王淼, 胡古今, 戴宁, 吴惠桢 2014 63 136803]
[6] Reynolds D, Seib D, Stetson S, Herter T, Rowlands N, Schoenwald J 1989 IEEE Trans. Nucl. Sci. 36 857
[7] Hogue H H, Guptill M L, Reynolds D, Atkins E W, Stapelbroek M G 2003 Proc. SPIE 4850 880
[8] Rauter P, Fromherz T, Winnerl S, Zier M, Kolitsch A, Helm M, Bauer G 2008 Appl. Phys. Lett. 93 261104
[9] Huffman J E, Crouse A G, Halleck B L, Downes T V, Herter T L 1992 J. Appl. Phys. 72 273
[10] Watson D M, Huffman J E 1988 Appl. Phys. Lett. 52 1602
[11] Cardozo B L, Haller E E, Reichertz L A, Beeman J W 2003 Appl. Phys. Lett. 83 3990
[12] Szmulowicz F, Madarasz F L 1987 J. Appl. Phys. 62 2533
[13] Leotin J 1999 Infrared Phys. Technol. 40 153
[14] Haegel N M, Jacobs J E, White A M 2000 Appl. Phys. Lett. 77 4389
[15] Rylkov V V, Leotin J, Asadauskas L, Aronzon B A, Kovalev D Y 2002 J. Appl. Phys. 91 4511
[16] Mahan G D 1980 J. Appl. Phys. 51 2634
[17] Berggren K F, Sernelius B E 1981 Phys. Rev. B 24 1971
[18] Liao K S, Li N, Wang C, Li L, Jing Y L, Wen J, Li M Y, Wang H, Zhou X H, Li Z F, Lu W 2014 Appl. Phys. Lett. 105 143501
[19] Liao K, Li N, Liu X, Huang L, Zeng Q, Zhou X, Li Z 2013 2013-Fifth International Symposium on Photoelectronic Detection and Imaging Beijing, China, June 25-27, 2013 p890913
[20] Shklovskii B I, Efros A L 1984 Electronic Properties of Doped Semiconductors (Berlin Heidelberg, New York, Tokyo: Springer-Verlag) pp52-82
[21] Liu X H, Zhou X H, Li N, Wang L, Sun Q L, Liao K S, Huang L, Li Q, Li Z F, Chen P P, Lu W 2014 J. Appl. Phys. 115 124503
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[1] Al-Naib I, Hebestreit E, Rockstuhl C, Lederer F, Christodoulides D, Ozaki T, Morandotti R 2014 Phys. Rev. Lett. 112 183903
[2] Rogalski A, Sizov F 2011 Opto-Electron. Rev. 19 346
[3] Hu W D, Yin F, Ye Z H, Quan Z J, Hu X N, Li Z F, Chen X S, Lu W 2009 Acta Phys. Sin. 58 7891 (in Chinese) [胡伟达, 殷菲, 叶振华, 全知觉, 胡晓宁, 李志锋, 陈效双, 陆卫 2009 58 7891]
[4] Liao K S, Liu X H, Huang L, Li Z F, Li N, Dai N 2014 Sci. Sin. : Phys. Mesh. Astron. 44 360 (in Chinese) [廖开升, 刘希辉, 黄亮, 李志锋, 李宁, 戴宁 2014 中国科学: 物理学 力学 天文学 44 360]
[5] Zhu H, Zhang B P, Wang M, Hu G J, Dai N, Wu H Z 2014 Acta Phys. Sin 63 136803 (in Chinese) [朱贺, 张兵坡, 王淼, 胡古今, 戴宁, 吴惠桢 2014 63 136803]
[6] Reynolds D, Seib D, Stetson S, Herter T, Rowlands N, Schoenwald J 1989 IEEE Trans. Nucl. Sci. 36 857
[7] Hogue H H, Guptill M L, Reynolds D, Atkins E W, Stapelbroek M G 2003 Proc. SPIE 4850 880
[8] Rauter P, Fromherz T, Winnerl S, Zier M, Kolitsch A, Helm M, Bauer G 2008 Appl. Phys. Lett. 93 261104
[9] Huffman J E, Crouse A G, Halleck B L, Downes T V, Herter T L 1992 J. Appl. Phys. 72 273
[10] Watson D M, Huffman J E 1988 Appl. Phys. Lett. 52 1602
[11] Cardozo B L, Haller E E, Reichertz L A, Beeman J W 2003 Appl. Phys. Lett. 83 3990
[12] Szmulowicz F, Madarasz F L 1987 J. Appl. Phys. 62 2533
[13] Leotin J 1999 Infrared Phys. Technol. 40 153
[14] Haegel N M, Jacobs J E, White A M 2000 Appl. Phys. Lett. 77 4389
[15] Rylkov V V, Leotin J, Asadauskas L, Aronzon B A, Kovalev D Y 2002 J. Appl. Phys. 91 4511
[16] Mahan G D 1980 J. Appl. Phys. 51 2634
[17] Berggren K F, Sernelius B E 1981 Phys. Rev. B 24 1971
[18] Liao K S, Li N, Wang C, Li L, Jing Y L, Wen J, Li M Y, Wang H, Zhou X H, Li Z F, Lu W 2014 Appl. Phys. Lett. 105 143501
[19] Liao K, Li N, Liu X, Huang L, Zeng Q, Zhou X, Li Z 2013 2013-Fifth International Symposium on Photoelectronic Detection and Imaging Beijing, China, June 25-27, 2013 p890913
[20] Shklovskii B I, Efros A L 1984 Electronic Properties of Doped Semiconductors (Berlin Heidelberg, New York, Tokyo: Springer-Verlag) pp52-82
[21] Liu X H, Zhou X H, Li N, Wang L, Sun Q L, Liao K S, Huang L, Li Q, Li Z F, Chen P P, Lu W 2014 J. Appl. Phys. 115 124503
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