| [1] |
Yu Sen, Xu Sheng-Rui, Tao Hong-Chang, Wang Hai-Tao, An Xia, Yang He, Xu Kang, Zhang Jin-Cheng, Hao Yue. Ion implantation induced nucleation and epitaxial growth of high-quality AlN. Acta Physica Sinica,
2024, 73(19): 196101.
doi: 10.7498/aps.73.20240674
|
| [2] |
Qiu Kang-Sheng, Zhao Yan-Hui, Liu Xiang-Bo, Feng Bao-Hua, Xu Xiu-Lai. Whispering gallery modes in a bent ZnO microwire. Acta Physica Sinica,
2014, 63(17): 177802.
doi: 10.7498/aps.63.177802
|
| [3] |
Liu Gui-Li, Li Yong. The electronic theory study on high-temperature oxidation mechanism of TiAl alloy. Acta Physica Sinica,
2012, 61(17): 177101.
doi: 10.7498/aps.61.177101
|
| [4] |
Yuan Wen-Jia, Zhang Yue-Guang, Shen Wei-Dong, Ma Qun, Liu Xu. Characteristics of Nb2O5 thin films deposited by ion beam sputtering. Acta Physica Sinica,
2011, 60(4): 047803.
doi: 10.7498/aps.60.047803
|
| [5] |
Li Tian-Jing, Li Gong-Ping, Ma Jun-Ping, Gao Xing-Xin. Effect of Co+ implantation on structural and optical properties in single-crystal TiO2. Acta Physica Sinica,
2011, 60(11): 116102.
doi: 10.7498/aps.60.116102
|
| [6] |
Liu Gui-Li, Yang Jie. Electronic theory study on high temperature oxidation mechanism of Nb-Ti-Al alloy. Acta Physica Sinica,
2010, 59(7): 4939-4944.
doi: 10.7498/aps.59.4939
|
| [7] |
Liu Gui-Li. An electronic theoretical study of the high-temperature oxidation behavior of Fe-Cr-Al alloy. Acta Physica Sinica,
2010, 59(1): 494-498.
doi: 10.7498/aps.59.494
|
| [8] |
Zhang Guo-ying, Li Dan, Liang Ting. Electronic structure and high-temperature oxidation behavior of Nb alloy. Acta Physica Sinica,
2010, 59(11): 8031-8036.
doi: 10.7498/aps.59.8031
|
| [9] |
Liu Gui-Li. High temperature oxidation mechanism of Nb-Al alloys. Acta Physica Sinica,
2010, 59(1): 499-503.
doi: 10.7498/aps.59.499
|
| [10] |
Ni Jin-Yu, Hao Yue, Zhang Jin-Cheng, Duan Huan-Tao, Zhang Jin-Feng. Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTs. Acta Physica Sinica,
2009, 58(7): 4925-4930.
doi: 10.7498/aps.58.4925
|
| [11] |
Li Hong, Wang Shao-Qing, Ye Heng-Qiang. Influence of Nb doping on oxidation resistance of γ-TiAl:A first principles study. Acta Physica Sinica,
2009, 58(13): 224-S229.
doi: 10.7498/aps.58.224
|
| [12] |
Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong. Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica,
2009, 58(5): 3302-3308.
doi: 10.7498/aps.58.3302
|
| [13] |
Fu Wei-Jia, Liu Zhi-Wen, Liu Ming, Mu Zong-Xin, Zhang Qing-Yu, Guan Qing-Feng, Chen Kang-Min. Growth behavior of ZnO nanoparticles formed on Zn implanted Si(001) combined with thermal oxidation. Acta Physica Sinica,
2009, 58(8): 5693-5699.
doi: 10.7498/aps.58.5693
|
| [14] |
Chen Zhi-Quan, Kawasuso Atsuo. Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica,
2006, 55(8): 4353-4357.
doi: 10.7498/aps.55.4353
|
| [15] |
Zhong Hong-Mei, Chen Xiao-Shuang, Wang Jin-Bin, Xia Chang-Sheng, Wang Shao-Wei, Li Zhi-Feng, Xu Wen-Lan, Lu Wei. Preparation of ZnMnO by ion implantation and its spectral characterization. Acta Physica Sinica,
2006, 55(4): 2073-2077.
doi: 10.7498/aps.55.2073
|
| [16] |
Zhang Xiao-Dong, Lin De-Xu, Li Gong-Ping, You Wei, Zhang Li-Min, Zhang Yu, Liu Zheng-Min. Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions. Acta Physica Sinica,
2006, 55(10): 5487-5493.
doi: 10.7498/aps.55.5487
|
| [17] |
Cha Li-Mei, Zhang Peng-Xiang, H.U.Habermeier. The preparation and properties of bilayer manganite films. Acta Physica Sinica,
2003, 52(2): 498-502.
doi: 10.7498/aps.52.498
|
| [18] |
Zhu Bo, Cai Xun, Wang Cheng-Guo, Cai Hua-Su. Studies on the relationship between acoustic emission characteristics and fractu re toughness of materials. Acta Physica Sinica,
2003, 52(8): 1960-1964.
doi: 10.7498/aps.52.1960
|
| [19] |
Fang Zhi-Jun, Xia Yi-Ben, Wang Lin-Jun, Zhang Wei-Li, Ma Zhe-Guo, Zhang Ming-Long. Study of the stress observed in diamond films on carbon-implanted alumina surfaces. Acta Physica Sinica,
2003, 52(4): 1028-1033.
doi: 10.7498/aps.52.1028
|
| [20] |
Zhang Ji-Cai, Dai Lun, Qin Guo-Gang, Ying Li-Zhen, Zhao Xin-Sheng. . Acta Physica Sinica,
2002, 51(3): 629-634.
doi: 10.7498/aps.51.629
|
下载:
