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2022, 71(6): 068501.
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Gu Zhao-Qiao, Guo Hong-Xia, Pan Xiao-Yu, Lei Zhi-Feng, Zhang Feng-Qi, Zhang Hong, Ju An-An, Liu Yi-Tian. Total dose effect and annealing characteristics of silicon carbide field effect transistor devices under different stresses. Acta Physica Sinica,
2021, 70(16): 166101.
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Zhang Jin-Feng, Xu Jia-Min, Ren Ze-Yang, He Qi, Xu Sheng-Rui, Zhang Chun-Fu, Zhang Jin-Cheng, Hao Yue. Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations. Acta Physica Sinica,
2020, 69(2): 028101.
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2017, 66(20): 208101.
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2014, 63(2): 027302.
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2014, 63(17): 178501.
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2011, 60(2): 027701.
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2010, 59(11): 8042-8047.
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2010, 59(2): 1302-1307.
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2009, 58(6): 4156-4161.
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2007, 56(12): 7315-7319.
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Tan Cong-Bing, Zhong Xiang-Li, Wang Jin-Bin, Liao Min, Zhou Yi-Chun, Pan Wei. Effects of neodymium doping on microstructures and ferroelectric properties of bismuth titanate ferroelectric thin films. Acta Physica Sinica,
2007, 56(10): 6084-6089.
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Wang Hua, Ren Ming-Fang. Synthesis and characteristics of Bi3.25La0.75Ti3O12 ferroelectric thin films by sol-gel technology. Acta Physica Sinica,
2006, 55(6): 3152-3156.
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2006, 55(9): 4956-4961.
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2004, 53(4): 1265-1270.
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2003, 52(10): 2627-2631.
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2000, 49(7): 1366-1370.
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