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Eu-doped bismuth titanate Bi3.15Eu0.85Ti3O12 (BET) ferroelectric thin film was prepared on the Pt/Ti/Si(111) substrates by metal-organic decomposition (MOD) at different annealing temperatures of 600℃, 650℃ and 700℃. The structure and ferroelectric properties of BET thin film were analyzed. The nanoscale domain switching was investigated by scanning probe microscopy (SPM) via direct observation. When the polarizing voltage increases to +6V, the ferroelectric c-domain suffers 180° domain switching. The ferroelectric r-domain can not be reversed due to its highly tetragonal structure even if the polarized voltage value increases to +12V. The ferroelectric properties of the BET thin films are dependent on the polarization of ferroelectric c-domain. With the increasing annealing temperature, the area of c-domain becomes larger, and the remnant polarization (2Pr) values of BET films increase. The value of 2Pr reaches 84μC/cm for BET thin film annealed at the temperature of 700℃.
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Keywords:
- ferroelectric thin film /
- domain switching /
- scanning probe microscopy
[1] Funakubo H, Watanabe T, Kojima T, Sakai T, Noguchi Y, Miyayama M, Osada M, Kakihana M, Saito K 2003 J. Cryst. Growth 248 180
[2] Lee H N, Hesse D, Zakharov N 2002 Science 296 2006
[3] [刘 洪、 蒲朝辉、 龚小刚、王志红、黄惠东、李言荣、肖定金、朱建国 2006 55 6123]
[4] Zhong X L, Wang J B, Zheng X J, Zhou Y C, Yang G W 2004 Appl. Phys. Lett. 85 5661
[5] Wu Y Y, Wang X H, Li L T 2010 Chin. Phys. B 19 037701
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[9] Lim K T, Kim K T, Kim D P, Kim C 2004 Thin Solid Films 447 337
[10] Liu H, Pu C H, Gong X G, Wang Z H, Huang H D, Li Y R, Xiao D Q, Zhu J G 2006 Acta Phys. Sin. 55 6123 (in Chinese)
[11] Zeng H R, Yu H F, Chu R Q, Li G R, Yin Q R, Tang X G 2005 Acta Phys. Sin. 54 1437 (in Chinese) [曾华荣、 余寒峰、 初瑞清、李国荣、殷庆瑞、唐新桂 2005 54 1437]
[12] Anbusathaiah V, Nagarajan V, Aggarwal S 2006 Appl. Phys. Lett. 89 132912
[13] Wang L H, Yu J, Liu F, Zheng C D, Li J, Wang Y B, Gao J X, Wang Z H, Zeng H Z, Zhao S L 2006 Acta Phys. Sin. 55 2590 (in Chinese) [王龙海、 于 军、 刘 峰、郑朝丹、李 佳、王耘波、高峻雄、王志红、曾慧中、赵素玲 2006 〖13] Tan C B, Zhong X L, Wang J B, Liao M, Zhon Y C, Pan W 2007 Acta Phys. Sin. 56 6084 (in Chinese) [谭丛兵、 钟向丽、 王金斌、廖 敏、周益春、潘 伟 2007 56 6084]
[14] Oh Y N, Yoon S G 2005 Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23 1029
[15] Yau C Y, Palan R, Tran K, Buchanan R C 2005 Appl. Phys. Lett. 86 032907
[16] Guo D Y, Wang Y B, Yu J, Gao J X, Li M Y 2006 Acta Phys. Sin. 55 5551 (in Chinese) [郭冬云、 王耘波、 于 军、 高俊雄、 李美亚 2006 55 5551]
[17] Zheng X J, He L, Zhou Y C, Tang M H 2006 Appl. Phys. Lett. 89 252908
[18] Kelman M B, Schloss L F, McIntyre P C, Hendrix B C, Bilodeau S M, Roeder J F 2002 Appl. Phys. Lett. 80 1258
[19] Chen X, Zhu W, Tan O K, Yao X 2002 Mater. Chem. Phys. 75 90
[20] Cheng S Y, Ho N J, Lu H Y 2008 J. Am. Ceram. Soc. 91 3721
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[1] Funakubo H, Watanabe T, Kojima T, Sakai T, Noguchi Y, Miyayama M, Osada M, Kakihana M, Saito K 2003 J. Cryst. Growth 248 180
[2] Lee H N, Hesse D, Zakharov N 2002 Science 296 2006
[3] [刘 洪、 蒲朝辉、 龚小刚、王志红、黄惠东、李言荣、肖定金、朱建国 2006 55 6123]
[4] Zhong X L, Wang J B, Zheng X J, Zhou Y C, Yang G W 2004 Appl. Phys. Lett. 85 5661
[5] Wu Y Y, Wang X H, Li L T 2010 Chin. Phys. B 19 037701
[6] Fu C, Huang Z, Li J, Guo D 2008 Sci. China Ser. E 51 1439
[7] Wu X M, Chen H, Zhai Y, Lu X M, Liu Y F, Zhu J S 2010 Chin. Phys. B 19 036802
[8] Chon U, Jang H M, Kim M G, Chang C H 2002 Phys. Rev. Lett. 89 087601
[9] Lim K T, Kim K T, Kim D P, Kim C 2004 Thin Solid Films 447 337
[10] Liu H, Pu C H, Gong X G, Wang Z H, Huang H D, Li Y R, Xiao D Q, Zhu J G 2006 Acta Phys. Sin. 55 6123 (in Chinese)
[11] Zeng H R, Yu H F, Chu R Q, Li G R, Yin Q R, Tang X G 2005 Acta Phys. Sin. 54 1437 (in Chinese) [曾华荣、 余寒峰、 初瑞清、李国荣、殷庆瑞、唐新桂 2005 54 1437]
[12] Anbusathaiah V, Nagarajan V, Aggarwal S 2006 Appl. Phys. Lett. 89 132912
[13] Wang L H, Yu J, Liu F, Zheng C D, Li J, Wang Y B, Gao J X, Wang Z H, Zeng H Z, Zhao S L 2006 Acta Phys. Sin. 55 2590 (in Chinese) [王龙海、 于 军、 刘 峰、郑朝丹、李 佳、王耘波、高峻雄、王志红、曾慧中、赵素玲 2006 〖13] Tan C B, Zhong X L, Wang J B, Liao M, Zhon Y C, Pan W 2007 Acta Phys. Sin. 56 6084 (in Chinese) [谭丛兵、 钟向丽、 王金斌、廖 敏、周益春、潘 伟 2007 56 6084]
[14] Oh Y N, Yoon S G 2005 Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23 1029
[15] Yau C Y, Palan R, Tran K, Buchanan R C 2005 Appl. Phys. Lett. 86 032907
[16] Guo D Y, Wang Y B, Yu J, Gao J X, Li M Y 2006 Acta Phys. Sin. 55 5551 (in Chinese) [郭冬云、 王耘波、 于 军、 高俊雄、 李美亚 2006 55 5551]
[17] Zheng X J, He L, Zhou Y C, Tang M H 2006 Appl. Phys. Lett. 89 252908
[18] Kelman M B, Schloss L F, McIntyre P C, Hendrix B C, Bilodeau S M, Roeder J F 2002 Appl. Phys. Lett. 80 1258
[19] Chen X, Zhu W, Tan O K, Yao X 2002 Mater. Chem. Phys. 75 90
[20] Cheng S Y, Ho N J, Lu H Y 2008 J. Am. Ceram. Soc. 91 3721
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