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2024, 73(13): 137102.
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Huang Min, Li Zhan-Hai, Cheng Fang. Tunable electronic structures and interface contact in graphene/C3N van der Waals heterostructures. Acta Physica Sinica,
2023, 72(14): 147302.
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Huang Ling-Qin, Zhu Jing, Ma Yue, Liang Ting, Lei Cheng, Li Yong-Wei, Gu Xiao-Gang. Research status and progress of metal contacts of SiC power devices. Acta Physica Sinica,
2021, 70(20): 207302.
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Guo Li-Juan, Hu Ji-Song, Ma Xin-Guo, Xiang Ju. Interfacial interaction and Schottky contact of two-dimensional WS2/graphene heterostructure. Acta Physica Sinica,
2019, 68(9): 097101.
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Wan Ya-Zhou, Gao Ming, Li Yong, Guo Hai-Bo, Li Yong-Hua, Xu Fei, Ma Zhong-Quan. First principle study of ternary combined-state and electronic structure in amorphous silica. Acta Physica Sinica,
2017, 66(18): 188802.
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Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica,
2013, 62(20): 207303.
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Jiang Zhong-Wei, Wang Wen-Xin, Gao Han-Chao, Li Hui, He Tao, Yang Cheng-Liang, Chen Hong, Zhou Jun-Ming. Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots. Acta Physica Sinica,
2009, 58(1): 471-476.
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Ji Zi-Wu, Lu Yun, Chen Jin-Xiang, Mino Hirofumi, Akimoto Ryoichi, Takeyama Shojiro. Built-in electric field and a new type of charged excitons observed in modulation-doped ZnSe/BeTe type-Ⅱ quantum well. Acta Physica Sinica,
2008, 57(2): 1214-1219.
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Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue. Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing. Acta Physica Sinica,
2008, 57(7): 4487-4491.
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Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Huang Zhi-Ming, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Guo Shao-Ling, Chu Jun-Hao. Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands. Acta Physica Sinica,
2008, 57(4): 2481-2485.
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Gao Hong-Ling, Li Dong-Lin, Zhou Wen-Zheng, Shang Li-Yan, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping. Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness. Acta Physica Sinica,
2007, 56(8): 4955-4959.
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Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Cui Li-Jie, Li Dong-Lin, Gao Hong-Ling, Zeng Yi-Ping, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao. Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems. Acta Physica Sinica,
2007, 56(7): 4099-4104.
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Tang Lin, Huang Jian-Hua, Duan Zheng-Lu, Zhang Wei-Ping, Zhou Zhao-Ying, Feng Yan-Ying, Zhu Rong. Quantum tunnelling time of cold atom passing through a laser beam. Acta Physica Sinica,
2006, 55(12): 6606-6611.
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Zhou Wen-Zheng, Yao Wei, Zhu Bo, Qiu Zhi-Jun, Guo Shao-Ling, Lin Tie, Cui Li-Jie, Gui Yong-Sheng, Chu Jun-Hao. Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAlAs/InGaAs single quantum well. Acta Physica Sinica,
2006, 55(4): 2044-2048.
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Guo Ru-Hai, Shi Hong-Yan, Sun Xiu-Dong. The calculation of strain distribution in quantum dots with Green method. Acta Physica Sinica,
2004, 53(10): 3487-3492.
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2002, 51(6): 1355-1359.
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LI HONG-WEI, WANG TAI-HONG. THE INFLUENCE OF InAs QUANTUM DOTS ON THE TRANSPORT PROPERTIES OF SCHOTTKY DIODE. Acta Physica Sinica,
2001, 50(12): 2501-2505.
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LI HONG-WEI, WANG TAI-HONG. CURRENT TRANSPORT PROPERTIES OF GaAs SCHOTTKY DIODE CONTAINING InAs SELF-ASSEMBLED QUANTUM DOTS. Acta Physica Sinica,
2001, 50(2): 262-267.
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LI HONG-WEI, WANG TAI-HONG. CORRELATED DISCHARGING OF InAs QUANTUM DOTS IN METAL-SEMICONDUCTOR-METAL STRUCTURE. Acta Physica Sinica,
2001, 50(10): 2038-2043.
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NIE YI-HANG, SHI YUN-LONG, ZHANG YUN-BO, LIANG JIU-QING, PU FU-KE. MACROSCOPIC QUANTUM EFFECT IN SINGLE DOMAIN ANTIFERROMAGNETIC PARTICLES IN AN EXTERNAL MAGNETIC FIELD. Acta Physica Sinica,
2000, 49(8): 1580-1585.
doi: 10.7498/aps.49.1580
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