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Wu Fan-Fan, Ji Yi-Ru, Yang Wei, Zhang Guang-Yu. Experimental research progress of electronic band structure and low temperature transport based on molybdenum disulfide. Acta Physica Sinica,
2022, 71(12): 127306.
doi: 10.7498/aps.71.20220015
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Xu Jia-Ling, Jia Li-Yun, Liu Chao, Wu Quan, Zhao Ling-Jun, Ma Li, Hou Deng-Lu. Band structure of topological insulator Li(Na)AuS. Acta Physica Sinica,
2021, 70(2): 027101.
doi: 10.7498/aps.70.20200885
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Yang Wen, Song Jian-Jun, Ren Yuan, Zhang He-Ming. Band structure model of modified Ge for optical device application. Acta Physica Sinica,
2018, 67(19): 198502.
doi: 10.7498/aps.67.20181155
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Jin Feng, Zhang Zhen-Hua, Wang Cheng-Zhi, Deng Xiao-Qing, Fan Zhi-Qiang. Twisting effects on energy band structures and transmission behaviors of graphene nanoribbons. Acta Physica Sinica,
2013, 62(3): 036103.
doi: 10.7498/aps.62.036103
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Liu Zhu, Zhao Zhi-Fei, Guo Hao-Min, Wang Yu-Qi. Band structure and optical absorption in InAs/GaSb quantum well. Acta Physica Sinica,
2012, 61(21): 217303.
doi: 10.7498/aps.61.217303
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Sun Wei-Feng, Zheng Xiao-Xia. First-principles study of interface relaxation effects on interface structure, band structure and optical property of InAs/GaSb superlattices. Acta Physica Sinica,
2012, 61(11): 117301.
doi: 10.7498/aps.61.117301
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Gao Shang-Peng, Zhu Tong. Quasiparticle band structure calculation for SiC using self-consistent GW method. Acta Physica Sinica,
2012, 61(13): 137103.
doi: 10.7498/aps.61.137103
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Ma Jian-Li, Zhang He-Ming, Song Jian-Jun, Wang Guan-Yu, Wang Xiao-Yan. Energy band structure of uniaxial-strained silicon material on the (001) surface arbitrary orientation. Acta Physica Sinica,
2011, 60(2): 027101.
doi: 10.7498/aps.60.027101
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Lin Qi, Chen Yu-Hang, Wu Jian-Bao, Kong Zong-Min. Effect of N-doping on band structure and transport property of zigzag graphene nanoribbons. Acta Physica Sinica,
2011, 60(9): 097103.
doi: 10.7498/aps.60.097103
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Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke. The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors. Acta Physica Sinica,
2011, 60(4): 047101.
doi: 10.7498/aps.60.047101
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Dong Hua-Feng, Wu Fu-Gen, Mu Zhong-Fei, Zhong Hui-Lin. Effect of basis configuration on acoustic band structure in two-dimensional complex phononic crystals. Acta Physica Sinica,
2010, 59(2): 754-758.
doi: 10.7498/aps.59.754
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying. Band structure of strained Si1-xGex. Acta Physica Sinica,
2009, 58(11): 7947-7951.
doi: 10.7498/aps.58.7947
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Wang Wei, Sun Jia-Fa, Liu Mei, Liu Su. First-principles calculations on the electronic band structure of β-Pyrochlore superconductors AOs2O6 (A=K,Rb,Cs). Acta Physica Sinica,
2009, 58(8): 5632-5639.
doi: 10.7498/aps.58.5632
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Liu Hong, Yin Hai-Jian, Xia Shu-Ning. Electrical properties of the deformed carbon nanotube field-effect transistors. Acta Physica Sinica,
2009, 58(12): 8489-8500.
doi: 10.7498/aps.58.8489
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Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Xuan Rong-Xi. Band structure of strained Si/(111)Si1-xGex: a first principles investigation. Acta Physica Sinica,
2008, 57(9): 5918-5922.
doi: 10.7498/aps.57.5918
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Shao Ming-Zhu, Luo Shi-Yu. The sine-squared potential and the band structure for channelling effects. Acta Physica Sinica,
2007, 56(6): 3407-3410.
doi: 10.7498/aps.56.3407
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Wu Yun-Wen, Hai Wen-Hua, Cai Li-Hua. Energy band structure of two ions in a one-dimensional Paul trap. Acta Physica Sinica,
2006, 55(2): 583-589.
doi: 10.7498/aps.55.583
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Chen De-Yan, Lü Tie-Yu, Huang Mei-Chun. GW quasiparticle band structure of BaSe. Acta Physica Sinica,
2006, 55(7): 3597-3600.
doi: 10.7498/aps.55.3597
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Yu Wei, Zhang Li, Wang Bao-Zhu, Lu Wan-Bing, Wang Li-Wei, Fu Guang-Sheng. Hydrogen bonding configurations and energy band structures of hydrogenated nanocrystalline silicon films. Acta Physica Sinica,
2006, 55(4): 1936-1941.
doi: 10.7498/aps.55.1936
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Li Shu-Ping, Wang Ren-Zhi. Average-bond-energy method in Schottky barrier height calculation. Acta Physica Sinica,
2003, 52(3): 542-546.
doi: 10.7498/aps.52.542
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