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Ma Chao, Min Dao-Min, Li Sheng-Tao, Zheng Xu, Li Xi-Yu, Min Chao, Zhan Hai-Xia. Trap distribution and direct current breakdown characteristics in polypropylene/Al2O3 nanodielectrics. Acta Physica Sinica,
2017, 66(6): 067701.
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Zhu Jian-Yun, Liu Lu, Li Yu-Qiang, Xu Jing-Ping. Effect of annealing atmosphere on characteristics of MONOS with LaTiON or HfLaON as charge storage layer. Acta Physica Sinica,
2013, 62(3): 038501.
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2013, 62(19): 197203.
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Zhang Lei, Ye Hui, Huangfu You-Rui, Liu Xu. Investigation of Ge quantum dots formation on SiO2 substratethrough annealing process. Acta Physica Sinica,
2011, 60(7): 076103.
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Sang Cui-Cui, Wang Yong-Jun, Wan Jian-Jie, Ding Xiao-Bin, Dong Chen-Zhong. Theoretical study of radiative recombination and the sub-sequent radiative decay processes in highly charged Au ions. Acta Physica Sinica,
2010, 59(6): 3871-3877.
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2009, 58(6): 4090-4095.
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Ding Hong-Lin, Liu Kui, Wang Xiang, Fang Zhong-Hui, Huang Jian, Yu Lin-Wei, Li Wei, Huang Xin-Fan, Chen Kun-Ji. Effect of control oxide on the performance of nanocrystalline silicon based double-barrier floating gate memory structure. Acta Physica Sinica,
2008, 57(7): 4482-4486.
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Zhu Jun, Zhang Xing-Yuan, Lu Hong-Bo. Effect of annealing and polarizing temperature on the trap level distribution in nylon 11 film electrets. Acta Physica Sinica,
2005, 54(7): 3414-3417.
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Wang Yan-Gang, Xu Ming-Zhen, Tan Chang-Hua, Duan Xiao-Rong. Conduction mechanism of ultra-thin gate oxide n-MOSFET after soft breakdown. Acta Physica Sinica,
2005, 54(8): 3884-3888.
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2002, 51(8): 1851-1855.
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LIU HONG-XIA, FANG JIAN-PING, HAO YUE. EXPERIMENTAL ANALYSIS AND PHYSICAL MODEL INVESTIGATION OF TDDB OF THIN GATE OXIDE. Acta Physica Sinica,
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2000, 49(6): 1163-1167.
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1991, 40(11): 1855-1861.
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