[1] |
Chen Shun-Sheng, Xiong Liang-Bin, Yang Chang-Ping. Interfacial trap dependent resistance switching effect in Nd0.7Sr0.3MnO3 ceramic. Acta Physica Sinica,
2016, 65(8): 087302.
doi: 10.7498/aps.65.087302
|
[2] |
Yang Peng, Lü Yan-Wu, Wang Xin-Bo. Effect of inserted AlN layer on the two-dimensional electron gas in AlxGa1-xN/AlN/GaN. Acta Physica Sinica,
2015, 64(19): 197303.
doi: 10.7498/aps.64.197303
|
[3] |
Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Shu Bin, Zhou Chun-Yu, Li Yu-Chen, Lü Yi. Research on the capacitance-voltage characteristic of strained-silicon NMOS accumulation capacitor. Acta Physica Sinica,
2013, 62(5): 057103.
doi: 10.7498/aps.62.057103
|
[4] |
Wang Wei, Luo Xiao-Bin, Yang Li-Jie, Zhang Ning. Magnetocapacitance effect of magnetoelectric laminated composite at resonant frequency. Acta Physica Sinica,
2011, 60(10): 107702.
doi: 10.7498/aps.60.107702
|
[5] |
Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke. The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors. Acta Physica Sinica,
2011, 60(4): 047101.
doi: 10.7498/aps.60.047101
|
[6] |
Wu Xiao-Yan, Kong Ming, Li Ge-Yang, Zhao Wen-Ji. Crystallization of Si3N4 on h-AlN and superhardness effect of AlN/Si3N4 nanomultilayers. Acta Physica Sinica,
2009, 58(4): 2654-2659.
doi: 10.7498/aps.58.2654
|
[7] |
Yu Li-Hua, Dong Song-Tao, Dong Shi-Run, Xu Jun-Hua. Epitaxial growth and mechanical properties of AlN/Si3N4 nanostructured multilayers. Acta Physica Sinica,
2008, 57(8): 5151-5158.
doi: 10.7498/aps.57.5151
|
[8] |
Li Rui-Min, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin. A 1/f noise based research of radiation induced interface trap buildup process. Acta Physica Sinica,
2007, 56(6): 3400-3406.
doi: 10.7498/aps.56.3400
|
[9] |
WANG YOU-XIANG, YUE RUI-FENG, CHEN CHUN-HUA. INTERFACIAL REACTION BETWEEN Ti THIN FILM AND AlN CERAMIC. Acta Physica Sinica,
1998, 47(1): 75-82.
doi: 10.7498/aps.47.75
|
[10] |
BAN DA-YAN, FANG RONG-CHUAN, XUE JIAN-GENG, LU ER-DONG, XU SHI-HONG, XU PENG-SHOU. VALENCE BAND OFFSETS OF Si/ZnS POLAR INTERFACES: A SYNCHROTRON RADIATION PHOTOEMISSION STUDY. Acta Physica Sinica,
1997, 46(9): 1817-1825.
doi: 10.7498/aps.46.1817
|
[11] |
XU SHI-HONG, LU ER-DONG, YU XIAO-JIANG, PAN HAI-BIN, ZHANG FA-PEI, XU PENG-SHOU. SRPES STUDY OF THE Sm/Si(100) INTERFACE FORMATION AND ELECTRONIC STRUCTURES. Acta Physica Sinica,
1996, 45(11): 1898-1904.
doi: 10.7498/aps.45.1898
|
[12] |
HUANG CHUN-HUI, CHEN PING, WANG XUN. PHOTOEMISSION STUDY OF VALENCE BAND DISCONTINUITY OF Si/GaP(Ⅲ)HETEROINTERFACE. Acta Physica Sinica,
1993, 42(10): 1654-1660.
doi: 10.7498/aps.42.1654
|
[13] |
CHEN KAI-MAO, JIN SI-XUAN, WU LAN-QING, ZENG SHU-RONG, LIU HONG-FEI. INTERFACE STATES AND DEEP CENTERS IN Au-DOPED MOS STRUCTURES. Acta Physica Sinica,
1993, 42(8): 1324-1332.
doi: 10.7498/aps.42.1324
|
[14] |
GAO SHAN-HU, ZHANG YUN, XUN KUN, ZHAO RU-GUANG, YANG WEI-SHENG. TUNABLE-SAMPLING-DEPTH ELECTRON ENERGY LOSS SPECTROSCOPY STUDIES OF Sn/Si INTERFACE. Acta Physica Sinica,
1993, 42(8): 1290-1296.
doi: 10.7498/aps.42.1290
|
[15] |
SHI YI-SHENG, ZHAO TE-XIU, LIU HONG-TU, WANG XIAO-PING. XPS AND AES STUDY FOR Pd/W/Si(lll) BILAYER INTERFACE. Acta Physica Sinica,
1992, 41(11): 1849-1855.
doi: 10.7498/aps.41.1849
|
[16] |
CHEN KAI-MAO, WU LAN-QING, PENG QING-ZHI, LIU HONG-FEI. DEEP LEVEL IN BOTH Si/SiO2 INTERFACE AND ITS NEIGH-BOURHOOD AND Si/SiO2 INTERFACE STATES IN p TYPE SILICON MOS STRUCTURE. Acta Physica Sinica,
1992, 41(11): 1870-1879.
doi: 10.7498/aps.41.1870
|
[17] |
WANG XIANG-DONG, HU JI-HUANG, GE YU-QING, DAI DAO-XUAN. TOTAL CURRENT SPECTRA STUDIES ON ELECTRONIC STATES OF Si(100) SURFACE. Acta Physica Sinica,
1992, 41(6): 992-998.
doi: 10.7498/aps.41.992
|
[18] |
ZHONG ZHAN-TIAN, WANG DA-WEN, LIAO XIAN-BO, FAN YUE, LI CHENG-FANG, MOU SHAN-MING. XPS AND AES STUDY FOR Au/a-Si:H INTERFACE. Acta Physica Sinica,
1991, 40(2): 275-280.
doi: 10.7498/aps.40.275
|
[19] |
SU ZI-MIN, PENG SHAO-QI. DETERMINATION OF THE GAP STATE DISTRIBUTION IN a-Si:H BY THE METHOD OF INTERNAL PHOTOEMISSION TRANSIENT CURRENT TEMPERATURE SPECTROSCOPY. Acta Physica Sinica,
1986, 35(6): 731-740.
doi: 10.7498/aps.35.731
|
[20] |
FU CHUN-YIN, LU YONG-LING, ZENG SHU-RONG. RESPONSE OF THE MINORITY CARRIER IN THE SEMICONDUCTORS DLTS UNDER MAJORITY CARRIER PULSE CONDITION. Acta Physica Sinica,
1985, 34(12): 1559-1566.
doi: 10.7498/aps.34.1559
|