| [1] |
You Ming-Hui, Li Xue, Li Shi-Jun, Liu Guo-Jun. Growth of lattice matched InAs/AlSb superlattices by molecular beam epitaxy. Acta Physica Sinica,
2023, 72(1): 014203.
doi: 10.7498/aps.72.20221383
|
| [2] |
Yang Wen-Xian, Ji Lian, Dai Pan, Tan Ming, Wu Yuan-Yuan, Lu Jian-Ya, Li Bao-Ji, Gu Jun, Lu Shu-Long, Ma Zhong-Quan. Study on photoluminescence properties of 1.05 eV InGaAsP layers grown by molecular beam epitaxy. Acta Physica Sinica,
2015, 64(17): 177802.
doi: 10.7498/aps.64.177802
|
| [3] |
Li Wen-Tao, Liang Yan, Wang Wei-Hua, Yang Fang, Guo Jian-Dong. Precise control of LaTiO3(110) film growth by molecular beam epitaxy and surface termination of the polar film. Acta Physica Sinica,
2015, 64(7): 078103.
doi: 10.7498/aps.64.078103
|
| [4] |
Su Shao-Jian, Zhang Dong-Liang, Zhang Guang-Ze, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2013, 62(5): 058101.
doi: 10.7498/aps.62.058101
|
| [5] |
Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai, Luo Yi. Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy. Acta Physica Sinica,
2012, 61(23): 237804.
doi: 10.7498/aps.61.237804
|
| [6] |
Zhang Bing-Po, Cai Chun-Feng, Cai Xi-Kun, Wu Hui-Zhen, Wang Miao. Study of growth of [111]-oriented CdTe thin films by MBE. Acta Physica Sinica,
2012, 61(4): 046802.
doi: 10.7498/aps.61.046802
|
| [7] |
Yan Feng-Ping, Zheng Kai, Wang Lin, Li Yi-Fan, Gong Tao-Rong, Jian Shui-Sheng, K. Ogata, K. Koike, S. Sasa, M. Inoue, M. Yano. Measurement of thickness and refractive index of Zn1-xMgxO film grown on sapphire substrate by molecular beam epitaxy. Acta Physica Sinica,
2007, 56(7): 4127-4131.
doi: 10.7498/aps.56.4127
|
| [8] |
Wang Qing-Xue, Yang Jian-Rong, Sun Tao, Wei Yan-Feng, Fang Wei-Zheng, He Li. Relationship between lattice parameters and compositions of molecular beam epitaxial Hg1－xCdxTe films. Acta Physica Sinica,
2005, 54(8): 3726-3733.
doi: 10.7498/aps.54.3726
|
| [9] |
Xu Xiao-Hua, Niu Zhi-Chuan, Ni Hai-Qiao, Xu Ying-Qiang, Zhang Wei, He Zheng-Hong, Han Qin, Wu Rong-Han, Jiang De-Sheng. Photoluminescence study of (GaAs1－xSbx/InyGa1－yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy. Acta Physica Sinica,
2005, 54(6): 2950-2954.
doi: 10.7498/aps.54.2950
|
| [10] |
. . Acta Physica Sinica,
2002, 51(2): 310-314.
doi: 10.7498/aps.51.310
|
| [11] |
. . Acta Physica Sinica,
2002, 51(2): 372-376.
doi: 10.7498/aps.51.372
|
| [12] |
NIU ZHI-CHUAN, ZHOU ZENG-QI, LIN YAO-WANG, LI XIN-FENG, ZHANG YI, HU XIONG WEI, Lü ZHEN-DONG, YUAN ZHI-LIANG, XU ZHONG-YING. InGaAs/GaAs STRAINED RIDGE QUANTUM WIRES GROWN-BY MBE ON NONPLANAR SUBSTRATE. Acta Physica Sinica,
1997, 46(5): 969-974.
doi: 10.7498/aps.46.969
|
| [13] |
GUI YONG-SHENG, ZHENG GUO-ZHEN, CHU JUN-HAO, GUO SHAO-LING, TANG DING-YUAN. MAGNETO TRANSPORT CHARACTERIZATION OF MBE GROWN Hg1-xCdxTe. Acta Physica Sinica,
1997, 46(8): 1631-1635.
doi: 10.7498/aps.46.1631
|
| [14] |
GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING. Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE. Acta Physica Sinica,
1996, 45(4): 647-654.
doi: 10.7498/aps.45.647
|
| [15] |
QI MING, J. SHIRAKASHI, E. TOKUMITSU, S. NOZAKI, M. KONAGAI, K. TAKAHASHI, LUO JIN-SHENG. MOMBE GROWTH OF CARBON DOPED p-TYPE GaAs AND InGaAs. Acta Physica Sinica,
1993, 42(12): 1956-1962.
doi: 10.7498/aps.42.1956
|
| [16] |
ZHOU GUO-LIANG, SHENG CHI, FAN YONG-LIANG, JIANG WEI-DONG, YU MING-RBN. MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES. Acta Physica Sinica,
1993, 42(7): 1121-1128.
doi: 10.7498/aps.42.1121-2
|
| [17] |
LU LI-WU, ZHOU JIE, LIANG JI-BEN, KONG MEI-YING. DEEP LEVEL STUDIES OF P-HEMT STRUCTURE GROWN BY MBE. Acta Physica Sinica,
1993, 42(5): 817-823.
doi: 10.7498/aps.42.817
|
| [18] |
ZHOU JIE, LU LI-WU, HAN ZHI-YONG, LIANG JI-BEN. A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON Si. Acta Physica Sinica,
1991, 40(11): 1827-1832.
doi: 10.7498/aps.40.1827
|
| [19] |
Zhou Guo-liang Sheng Chi Fan Yong-liang Jiang Wei-dong Yu Ming-reng. MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF Ge_xSi_1-x_/Si STRAINED一AYER SUPERLATTICES. Acta Physica Sinica,
1991, 40(7): 1121-1128.
doi: 10.7498/aps.40.1121
|
| [20] |
CHEN KE-MING, JIN GAO-LONG, SHENG CHI, YU MING-REN. THE GROWTH DYNAMICS OF Si(111) MBE STUDIED BY RHEED INTENSITY OSCILLATIONS. Acta Physica Sinica,
1990, 39(12): 1945-1951.
doi: 10.7498/aps.39.1945
|
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