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Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai, Luo Yi. Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy. Acta Physica Sinica,
2012, 61(23): 237804.
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Zhang Bing-Po, Cai Chun-Feng, Cai Xi-Kun, Wu Hui-Zhen, Wang Miao. Study of growth of [111]-oriented CdTe thin films by MBE. Acta Physica Sinica,
2012, 61(4): 046802.
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Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao. InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2010, 59(11): 8026-8030.
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Zhao Ming-Hai, Sun Jing-Jing, Wang Dan, Zou Zhi-Qiang, Liang Qi. STM studies of the epitaxial growth of C60 molecules on Si(111)-7×7 surface. Acta Physica Sinica,
2010, 59(1): 636-642.
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Li Ying-De. A theoretical study of electrical properties of molecular junction. Acta Physica Sinica,
2006, 55(6): 2997-3002.
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2005, 54(6): 2950-2954.
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2000, 49(6): 1132-1135.
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1997, 46(5): 969-974.
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1996, 45(4): 647-654.
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1994, 43(7): 1118-1122.
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1993, 42(1): 66-71.
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1993, 42(7): 1121-1128.
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1991, 40(7): 1121-1128.
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HU FU-YI, LI AI-ZHEN. RAMAN SCATTERING STUDIES OF MBE-GROWN GaAs/Si. Acta Physica Sinica,
1991, 40(6): 962-968.
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1990, 39(12): 1945-1951.
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1990, 39(12): 1959-1964.
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1989, 38(8): 1265-1270.
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