-
The InAs/GaSb superlattices (SPLs) is an important component of quantum cascade laser (QCL) and interband cascade laser (ICL). In particular, the upper and lower SPL waveguide layers of the ICL are alternately grown from a large number of ultra-film epitaxial layers (nm) by molecular beam epitaxy(MBE). Subtle lattice mismatch may directly lead to the deterioration of material crystal quality, and the change of thicknessand the composition of each layer will strongly affect the structural performance of device material. The optimal growth temperature of InAs/GaSb SPLs is about 420 ℃. By growing GaSb/AlSb and InAs/GaSb SPL both with 40 short periods under the substrate rotating, the thickness of GaSb layer and AlSb layer are 5.448 nm and 3.921 nm, and the thickness of InAs layer and GaSb layer are 8.998 nm and 13.77 nm, respectively. The error is within about 10%, and the optimal growth conditions of InAs/AlSb SPLs are obtained. A lattice matched 40-period InAs/AlSb superlattice waveguide layer is grown on GaSb substrate. The influence of drifting As injection on the average lattice constant of InAs/AlSb superlattice is fully considered. Under the condition of fixed SOAK time of 3 s, the As pressure is changed to 1.7 × 10–6 mbar to adjust the average lattice constants of the superlattices and achieve their matching with the GaSb substrate lattice. The experimental results show that the 0 order satellite peak of the SPL coincides with the peak of the GaSb substrate, and has a perfect lattice matching, and that the sharp second order satellite peak and the periodic structure good repeatability also indicate that the superlattice material has the excellent structural quality of the SPLs structure.
-
Keywords:
- molecular beam epitaxy(MBE) /
- lattice matched /
- superlattice /
- attice mismatch
[1] Bennett B R, Magno R, Boos J B, Kruppa W, Ancona M G 2005 Solid-State Electron. 49 1875
Google Scholar
[2] Cerutti L, Boissier G, Grech P, Perona A, Angellier J, Rouillard Y, Kaspi R, Genty F 2006 Electron. Lett. 42 1400
Google Scholar
[3] Delaunay P Y, Nguyen B M, Hoffman D, Hood A, Huang E K W, Razeghi M, Tidrow M Z 2008 Appl. Phys. Lett. 92 111112
Google Scholar
[4] Baranov A N, Teissier R 2015 IEEE J. Sel. Top. Quantum Electron. 21 1200612
[5] Cathabard O, Teissier R, Devenson J, Moreno J, Baranov A N 2010 Appl. Phys. Lett. 96 141110
Google Scholar
[6] Benveniste E, Vasanelli A, Delteil A, Devenson J, Teissier R, Baranov A, Andrews A M, Strasser G, Sagnes I, Sirtori C 2008 Appl. Phys. Lett. 93 131108
Google Scholar
[7] Nguyen V H, Loghmari Z, Philip H, Bahriz M, Baranov A N, Teissier R 2019 Photonics 6 31
Google Scholar
[8] Brandstetter M, Kainz M A, Zederbauer T, Krall M, Schönhuber S, Detz H, Schrenk W, Andrews A M, Strasser G, Unterrainer K 2016 Appl. Phys. Lett. 108 011109
Google Scholar
[9] Vurgaftman I, Bewley W W, Canedy C L, Kim C S, Kim M, Merritt C D, Abell J, Lindle J R, Meyer J R 2011 Nat. Commun. 2 585
Google Scholar
[10] Weih R, Kamp M, Hofling S 2013 Appl. Phys. Lett. 102 231123
Google Scholar
[11] Kroemer H 2004 Physica E 20 196
Google Scholar
[12] Li L H, Zhu J X, Chen L, Davies A G, Linfield E H 2015 Opt. Express 23 2720
Google Scholar
[13] Schmitz J, Wagner J, Fuchs F, Herres N, Koidl P, Ralston J D 1995 J. Cryst. Growth 150 858
Google Scholar
[14] Jackson E M, Boishin G I, Aifer E H, Bennett B R, Whitman L J 2004 J. Cryst. Growth 270 301
Google Scholar
[15] Xie Q H, Van Nostrand J E, Brown J L, Stutz C E 1999 J. Appl. Phys. 86 329
Google Scholar
[16] Diaz-Thomas D A, Stepanenko O, Bahriz M, Calvez S, Tournié E, Baranov A N, Almuneau G, Cerutti L 2019 Opt. Express 27 31425
Google Scholar
[17] Canedy C L, Abell J, Bewley W W, Aifer E H, Kim C S, Nolde J A, Kim M, Tischler J G, Lindle J R, Jackson E M, Vurgaftman I, Meyer J R 2010 J. Vac. Sci. Technol. B 28 C3G8
Google Scholar
[18] Haugan H J, Grazulis L, Brown G J, Mahalingam K, Tomich D H 2004 J. Cryst. Growth 261 471
Google Scholar
[19] Bracker A S, Yang M J, Bennett B R, Culbertson J C, Moore W J 2000 J. Cryst. Growth 220 384
Google Scholar
[20] 尤明慧, 祝煊宇, 李雪, 李士军, 刘国军 2021 红外与毫米波学报 40 725
Google Scholar
You M H, Zhu X Y, Li X, Li S J, Liu G J 2021 J. Infrared Millim. Waves 40 725
Google Scholar
[21] https://lase.mer.utexas.edu/mbe.php [2022-07-09]
[22] 马琳, 王玉田, 庄蔚华 1992 红外与毫米波学报 11 37
Ma L, Wang Y T, Zhunag W H 1992 J. Infrared Millim. Waves 11 37
[23] https://lelpersonal.weebly.com/uploads/1/3/4/6/13462265/report.pdf (2022.07.09)
[24] Bauer A, Dallner M, Herrmann A, Lehnhardt T, Kamp M, Höfling S, Worschech L, Forchel A 2010 Nanotechnology 21 455603
Google Scholar
[25] Tuttle G, Kroemer H, English J H 1990 J. Appl. Phys. 67 3032
Google Scholar
[26] Spitzer J, Höpner A, Kuball M, Cardona M, Jenichen B, Neuroth H, Brar B, Kroemer H 1995 J. Appl. Phys. 77 811
Google Scholar
-
图 1 GaSb衬底在410 ℃附近表面再构从(a) 3×到(b) 5× 转变
Figure 1. The surface reconstruction of GaSb substrate changed from (a) 3× to (b) 5× at about 410 ℃.
图 2 不同温度下生长InAs材料获得的RHEED振荡曲线
Figure 2. The oscillation curves of RHEED obtained by growing InAs materials at different temperatures.
图 3 GaSb和GaAs生长速率随Ga源炉温度的变化情况
Figure 3. Variation of growth rate of GaSb and GaAs with temperature of Ga source furnace.
图 4 采用RHEED测量获得的AlSb生长速率随源炉温度变化情况
Figure 4. Variation of AlSb growth rate measured by RHEED with source furnace temperature.
图 5 GaSb/AlSb和InAs/GaSb 40周期短周期超晶格结的XRD典型结果
Figure 5. Typical results obtained from XRD measurement of 40-short period SPLs structures of GaSb/AlSb and InAs/ GaSb.
图 6 0, 3和8 nm三个不同针阀位置生长样品的XRD曲线
Figure 6. XRD curves of samples grown at three different needle valve positions of 0, 3 and 8 nm, respectively.
图 7 AlSb和GaSb样品生长后的高分辨率XRD衍射曲线
Figure 7. High resolution XRD diffraction curves of AlSb and GaSb samples after growth.
图 8 Sb束流SOAK时间变化对超晶格平均晶格常数的影响
Figure 8. Effect of time variation of Sb beam SOAK on the average lattice constant of SPLs.
图 9 As束流变化对超晶格平均晶格常数的影响情况
Figure 9. Effect of As beam variation on the average lattice constant of SPLs.
图 10 完整高分辨率XRD曲线, 内插图为40周期InAS/AlSb结构示意图及TEM图
Figure 10. The complete HRXRD curve of the sample, the inset is a schematic diagram of 40× InAs/AlSb SPLs with TEM.
-
[1] Bennett B R, Magno R, Boos J B, Kruppa W, Ancona M G 2005 Solid-State Electron. 49 1875
Google Scholar
[2] Cerutti L, Boissier G, Grech P, Perona A, Angellier J, Rouillard Y, Kaspi R, Genty F 2006 Electron. Lett. 42 1400
Google Scholar
[3] Delaunay P Y, Nguyen B M, Hoffman D, Hood A, Huang E K W, Razeghi M, Tidrow M Z 2008 Appl. Phys. Lett. 92 111112
Google Scholar
[4] Baranov A N, Teissier R 2015 IEEE J. Sel. Top. Quantum Electron. 21 1200612
[5] Cathabard O, Teissier R, Devenson J, Moreno J, Baranov A N 2010 Appl. Phys. Lett. 96 141110
Google Scholar
[6] Benveniste E, Vasanelli A, Delteil A, Devenson J, Teissier R, Baranov A, Andrews A M, Strasser G, Sagnes I, Sirtori C 2008 Appl. Phys. Lett. 93 131108
Google Scholar
[7] Nguyen V H, Loghmari Z, Philip H, Bahriz M, Baranov A N, Teissier R 2019 Photonics 6 31
Google Scholar
[8] Brandstetter M, Kainz M A, Zederbauer T, Krall M, Schönhuber S, Detz H, Schrenk W, Andrews A M, Strasser G, Unterrainer K 2016 Appl. Phys. Lett. 108 011109
Google Scholar
[9] Vurgaftman I, Bewley W W, Canedy C L, Kim C S, Kim M, Merritt C D, Abell J, Lindle J R, Meyer J R 2011 Nat. Commun. 2 585
Google Scholar
[10] Weih R, Kamp M, Hofling S 2013 Appl. Phys. Lett. 102 231123
Google Scholar
[11] Kroemer H 2004 Physica E 20 196
Google Scholar
[12] Li L H, Zhu J X, Chen L, Davies A G, Linfield E H 2015 Opt. Express 23 2720
Google Scholar
[13] Schmitz J, Wagner J, Fuchs F, Herres N, Koidl P, Ralston J D 1995 J. Cryst. Growth 150 858
Google Scholar
[14] Jackson E M, Boishin G I, Aifer E H, Bennett B R, Whitman L J 2004 J. Cryst. Growth 270 301
Google Scholar
[15] Xie Q H, Van Nostrand J E, Brown J L, Stutz C E 1999 J. Appl. Phys. 86 329
Google Scholar
[16] Diaz-Thomas D A, Stepanenko O, Bahriz M, Calvez S, Tournié E, Baranov A N, Almuneau G, Cerutti L 2019 Opt. Express 27 31425
Google Scholar
[17] Canedy C L, Abell J, Bewley W W, Aifer E H, Kim C S, Nolde J A, Kim M, Tischler J G, Lindle J R, Jackson E M, Vurgaftman I, Meyer J R 2010 J. Vac. Sci. Technol. B 28 C3G8
Google Scholar
[18] Haugan H J, Grazulis L, Brown G J, Mahalingam K, Tomich D H 2004 J. Cryst. Growth 261 471
Google Scholar
[19] Bracker A S, Yang M J, Bennett B R, Culbertson J C, Moore W J 2000 J. Cryst. Growth 220 384
Google Scholar
[20] 尤明慧, 祝煊宇, 李雪, 李士军, 刘国军 2021 红外与毫米波学报 40 725
Google Scholar
You M H, Zhu X Y, Li X, Li S J, Liu G J 2021 J. Infrared Millim. Waves 40 725
Google Scholar
[21] https://lase.mer.utexas.edu/mbe.php [2022-07-09]
[22] 马琳, 王玉田, 庄蔚华 1992 红外与毫米波学报 11 37
Ma L, Wang Y T, Zhunag W H 1992 J. Infrared Millim. Waves 11 37
[23] https://lelpersonal.weebly.com/uploads/1/3/4/6/13462265/report.pdf (2022.07.09)
[24] Bauer A, Dallner M, Herrmann A, Lehnhardt T, Kamp M, Höfling S, Worschech L, Forchel A 2010 Nanotechnology 21 455603
Google Scholar
[25] Tuttle G, Kroemer H, English J H 1990 J. Appl. Phys. 67 3032
Google Scholar
[26] Spitzer J, Höpner A, Kuball M, Cardona M, Jenichen B, Neuroth H, Brar B, Kroemer H 1995 J. Appl. Phys. 77 811
Google Scholar
DownLoad:
Catalog
Metrics
- Abstract views: 5683
- PDF Downloads: 132
- Cited By: 0
