| [1] |
You Ming-Hui, Li Xue, Li Shi-Jun, Liu Guo-Jun. Growth of lattice matched InAs/AlSb superlattices by molecular beam epitaxy. Acta Physica Sinica,
2023, 72(1): 014203.
doi: 10.7498/aps.72.20221383
|
| [2] |
Yang Wen-Xian, Ji Lian, Dai Pan, Tan Ming, Wu Yuan-Yuan, Lu Jian-Ya, Li Bao-Ji, Gu Jun, Lu Shu-Long, Ma Zhong-Quan. Study on photoluminescence properties of 1.05 eV InGaAsP layers grown by molecular beam epitaxy. Acta Physica Sinica,
2015, 64(17): 177802.
doi: 10.7498/aps.64.177802
|
| [3] |
Wang Qing-Xue, Yang Jian-Rong, Sun Tao, Wei Yan-Feng, Fang Wei-Zheng, He Li. Relationship between lattice parameters and compositions of molecular beam epitaxial Hg1－xCdxTe films. Acta Physica Sinica,
2005, 54(8): 3726-3733.
doi: 10.7498/aps.54.3726
|
| [4] |
YANG YU, XIA GUAN-QUN, ZHAO GUO-QING, WANG XUN. Si+ ION IMPLANTATION INFLUENCE ON PHOTOLUMINESCENCE IN Si1-xGex/Si QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica,
1998, 47(6): 978-984.
doi: 10.7498/aps.47.978
|
| [5] |
GUI YONG-SHENG, ZHENG GUO-ZHEN, CHU JUN-HAO, GUO SHAO-LING, TANG DING-YUAN. MAGNETO TRANSPORT CHARACTERIZATION OF MBE GROWN Hg1-xCdxTe. Acta Physica Sinica,
1997, 46(8): 1631-1635.
doi: 10.7498/aps.46.1631
|
| [6] |
NIU ZHI-CHUAN, ZHOU ZENG-QI, LIN YAO-WANG, LI XIN-FENG, ZHANG YI, HU XIONG WEI, Lü ZHEN-DONG, YUAN ZHI-LIANG, XU ZHONG-YING. InGaAs/GaAs STRAINED RIDGE QUANTUM WIRES GROWN-BY MBE ON NONPLANAR SUBSTRATE. Acta Physica Sinica,
1997, 46(5): 969-974.
doi: 10.7498/aps.46.969
|
| [7] |
YU MIN-FENG, YANG YU, SHEN WEN-ZHONG, ZHU HAI-JUN, GONG DA-WEI, SHENG CHI, WANG XUN. INTERSUBBAND ABSORPTION IN p-TYPE GexSi1-x/Si MULTIPLE QUANTUM WELLS AND ITS ANALYSIS. Acta Physica Sinica,
1997, 46(4): 740-746.
doi: 10.7498/aps.46.740
|
| [8] |
XU ZHI-ZHONG. THE VALENCE BAND STRUCTURES AND OPTICAL PROPERTIES OF STRAINED GaAs LAYERS GROWN ON THE GexSi1-x(001) SUBSTRATES. Acta Physica Sinica,
1996, 45(1): 126-132.
doi: 10.7498/aps.45.126
|
| [9] |
GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING. Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE. Acta Physica Sinica,
1996, 45(4): 647-654.
doi: 10.7498/aps.45.647
|
| [10] |
Xu Zhi-Zhong. . Acta Physica Sinica,
1995, 44(7): 1141-1147.
doi: 10.7498/aps.44.1141
|
| [11] |
XU ZHI-ZHONG. THE BOND LENGTHS AND THEIR EFFECTS ON THE ELECTRONIC ENERGY BAND STRUCTURES IN THE GexSi1-x ALLOYS. Acta Physica Sinica,
1994, 43(7): 1111-1117.
doi: 10.7498/aps.43.1111
|
| [12] |
XU ZHI-ZHONG. OPTICAL PROPERTIES OF COHERENTLY STRAINED ALLOYS GexSi1-x ON Si (001) SUBSTRATES. Acta Physica Sinica,
1993, 42(5): 824-831.
doi: 10.7498/aps.42.824
|
| [13] |
ZHOU JIE, LU LI-WU, HAN ZHI-YONG, LIANG JI-BEN. A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON Si. Acta Physica Sinica,
1991, 40(11): 1827-1832.
doi: 10.7498/aps.40.1827
|
| [14] |
WEI XING, JIANG WEI-DONG, ZHOU GUO-LIANG, YU MING-REN, WANC XUN. AUGER DEPTH PROFILE ANALYSIS OF GexSi1-x/Si SUPERLATTICE. Acta Physica Sinica,
1991, 40(9): 1514-1519.
doi: 10.7498/aps.40.1514
|
| [15] |
ZHOU GUO-LIANG, SHEN XIAO-LIANG, SHENG CHI, JIANG WEI-DONG, YU MING-REN. SMALL-ANGLE X-RAY DIFFRACTION ANALYSIS OF GexSi1-x/Si SUPERLATTICE. Acta Physica Sinica,
1991, 40(1): 56-63.
doi: 10.7498/aps.40.56
|
| [16] |
TIAN LIANG-GUANG, ZHU NAN-CHANG, CHEN JING-YI, LI RUN-SHEN, XU SHUN-SHENG, ZHOU GUO-LIANG. X-RAY DOUBLE-CRYSTAL DIFFRACTION STUDY OF HIGH QUALITY GexSi1-x/Si STRAINED LAYER SUPERLATTICE. Acta Physica Sinica,
1991, 40(3): 441-448.
doi: 10.7498/aps.40.441
|
| [17] |
Zhou Guo-liang Sheng Chi Fan Yong-liang Jiang Wei-dong Yu Ming-reng. MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF Ge_xSi_1-x_/Si STRAINED一AYER SUPERLATTICES. Acta Physica Sinica,
1991, 40(7): 1121-1128.
doi: 10.7498/aps.40.1121
|
| [18] |
CHEN KE-MING, JIN GAO-LONG, SHENG CHI, YU MING-REN. THE GROWTH DYNAMICS OF Si(111) MBE STUDIED BY RHEED INTENSITY OSCILLATIONS. Acta Physica Sinica,
1990, 39(12): 1945-1951.
doi: 10.7498/aps.39.1945
|
| [19] |
ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI. THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica,
1990, 39(12): 1959-1964.
doi: 10.7498/aps.39.1959
|
| [20] |
. INTERFACIAL PROPERTIES OF Si/GaP(111) HETEROJUNCT10N GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica,
1989, 38(8): 1265-1270.
doi: 10.7498/aps.38.1265
|
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