| [1] |
Zhang Bing-Po, Cai Chun-Feng, Cai Xi-Kun, Wu Hui-Zhen, Wang Miao. Study of growth of [111]-oriented CdTe thin films by MBE. Acta Physica Sinica,
2012, 61(4): 046802.
doi: 10.7498/aps.61.046802
|
| [2] |
Zhang Fan, Li Lin, Ma Xiao-Hui, Li Zhan-Guo, Sui Qing-Xue, Gao Xin, Qu Yi, Bo Bao-Xue, Liu Guo-Jun. Theoretical study of linewidth enhancement factor of InGaAs/GaAs strained quantum well lasers. Acta Physica Sinica,
2012, 61(5): 054209.
doi: 10.7498/aps.61.054209
|
| [3] |
Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai, Luo Yi. Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy. Acta Physica Sinica,
2012, 61(23): 237804.
doi: 10.7498/aps.61.237804
|
| [4] |
Ding Zhao, Wei Jun, Yang Zai-Rong, Luo Zi-Jiang, He Ye-Quan, Zhou Xun, He Hao, Deng Chao-Yong. Study on temperature calibration and surface phase transition of GaAs crystal substrate in MBE growth by RHEED real-time monitoring. Acta Physica Sinica,
2011, 60(1): 016109.
doi: 10.7498/aps.60.016109
|
| [5] |
Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao. InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2010, 59(11): 8026-8030.
doi: 10.7498/aps.59.8026
|
| [6] |
Wang Bao-Rui, Sun Zheng, Xu Zhong-Ying, Sun Bao-Quan, Ji Yang, Z. M. Wang, G. J. Salamo. Optical properties of InGaAs/GaAs quantum chains. Acta Physica Sinica,
2008, 57(3): 1908-1912.
doi: 10.7498/aps.57.1908
|
| [7] |
Xu Xiao-Hua, Niu Zhi-Chuan, Ni Hai-Qiao, Xu Ying-Qiang, Zhang Wei, He Zheng-Hong, Han Qin, Wu Rong-Han, Jiang De-Sheng. Photoluminescence study of (GaAs1－xSbx/InyGa1－yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy. Acta Physica Sinica,
2005, 54(6): 2950-2954.
doi: 10.7498/aps.54.2950
|
| [8] |
. . Acta Physica Sinica,
2002, 51(2): 310-314.
doi: 10.7498/aps.51.310
|
| [9] |
LIU HONG-FEI, CHEN HONG, LI ZHI-QIANG, WAN LI, HUANG QI, ZHOU JUN-MING, LUO YI, HAN YING-JUN. EPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE. Acta Physica Sinica,
2000, 49(6): 1132-1135.
doi: 10.7498/aps.49.1132
|
| [10] |
YI XIN-JIAN, LI YI, HAO JIAN-HUA, ZHANG XIN-YU, G.K.WONG. THIN FILMS OF Sb GROWN BY MOLECULAR BEAM EPITAXY AND THE QUANTUM SIZE EFFECT. Acta Physica Sinica,
1998, 47(11): 1896-1899.
doi: 10.7498/aps.47.1896
|
| [11] |
NIU ZHI-CHUAN, ZHOU ZENG-QI, WU RONG-HAN, FENG SONG-LIN, R.NOETZEL, U.JAHN, K.H.PLOOG. FORMATION OF GaAs UNIFORM DOT STRUCTURES GROWN BY MBE ON PATTERNED SUBSTRATES. Acta Physica Sinica,
1998, 47(8): 1346-1353.
doi: 10.7498/aps.47.1346
|
| [12] |
WU ZHENG YUN, WANG XIAO JUN, YU XIN, HUANG QI SHENG. PHOTOVOLTAIC INVESTIGATION ON THE STRAINED InGaAs/GaAs QUANTUM WELL. Acta Physica Sinica,
1997, 46(7): 1395-1399.
doi: 10.7498/aps.46.1395
|
| [13] |
MAO HUI-BING, LU WEI, MA ZHAO-HUI, LIU XING-QUAN, SHEN XUE-CHU. MONTE CARLO SIMULATION OF MBE GROWTH ON GaAs VICINAL SURFACE. Acta Physica Sinica,
1994, 43(7): 1118-1122.
doi: 10.7498/aps.43.1118
|
| [14] |
LU LI-WU, ZHOU JIE, XU JUN-YING, ZHONG ZHAN-TIAN. STUDIES ON HIGH TEMPERATURE TRAP OF AlGaAs/GaAs GRIN SCH SQW LASER FABRICATED BY MBE. Acta Physica Sinica,
1993, 42(1): 66-71.
doi: 10.7498/aps.42.66
|
| [15] |
ZHOU GUO-LIANG, SHENG CHI, FAN YONG-LIANG, JIANG WEI-DONG, YU MING-RBN. MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES. Acta Physica Sinica,
1993, 42(7): 1121-1128.
doi: 10.7498/aps.42.1121-2
|
| [16] |
QI MING, J. SHIRAKASHI, E. TOKUMITSU, S. NOZAKI, M. KONAGAI, K. TAKAHASHI, LUO JIN-SHENG. MOMBE GROWTH OF CARBON DOPED p-TYPE GaAs AND InGaAs. Acta Physica Sinica,
1993, 42(12): 1956-1962.
doi: 10.7498/aps.42.1956
|
| [17] |
HU FU-YI, LI AI-ZHEN. RAMAN SCATTERING STUDIES OF MBE-GROWN GaAs/Si. Acta Physica Sinica,
1991, 40(6): 962-968.
doi: 10.7498/aps.40.962
|
| [18] |
Zhou Guo-liang Sheng Chi Fan Yong-liang Jiang Wei-dong Yu Ming-reng. MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF Ge_xSi_1-x_/Si STRAINED一AYER SUPERLATTICES. Acta Physica Sinica,
1991, 40(7): 1121-1128.
doi: 10.7498/aps.40.1121
|
| [19] |
ZHOU JIE, LU LI-WU, HAN ZHI-YONG, LIANG JI-BEN. A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON Si. Acta Physica Sinica,
1991, 40(11): 1827-1832.
doi: 10.7498/aps.40.1827
|
| [20] |
ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI. THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica,
1990, 39(12): 1959-1964.
doi: 10.7498/aps.39.1959
|
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