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本文采用分子束外延(MBE)方法在BaF2衬底上直接外延生长了CdTe(111)薄膜. 反射高能电子衍射(RHEED)实时监控生长表面, 衍射图样揭示了CdTe(111)在BaF2表面由二维生长向三维生长的变化过程．XRD表征验证了外延生长的CdTe薄膜的单晶性质．由红外透射光谱测量和理论拟合相结合, 得到了CdTe外延薄膜室温带隙宽度Eg=1.511 eV.
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关键词:
- CdTe /
- 分子束外延(MBE) /
- RHEED /
- XRD
In this study, CdTe(111) thin films were epitaxially grown on freshly cleaved BaF2 substrate using molecular beam epitaxy (MBE). In situ characterization of reflection high energy electron diffraction (RHEED) reveals the growth mode of transition from 2D to 3D. XRD analysis results verify the single crystalline property of the as-grown films. Theoretical method is adopted to fit the measured near infrared transmission spectrum, revealing a CdTe energy gap of 1.511 eV at room temperature.[1] Sporken R, Sivananthan S,Mahavadi K K,Monfroy G, Boukerche M, Faurie J P 1989 Appl. Phys. Lett. 55 1879
[2] Datta S, Furdyna J K, Gunshor R L 1985 Supperlatt.Microstruct. 1 327
[3] Britt J, Ferekidis C 1993 Appl. Phys. Lett. 62 2851
[4] Romeo N, Basio A, Tedeschi R, Canevari V 2000 Mater. Chem. Phys. 66 201
[5] Wu X Z 2004 Sol. Energy. 77 803
[6] Novruzov V D, Fathi N M, Gorur1 O, Tomakin M, Bayramov A I, Schorr S, Mamedov N 2010 Phys. Status Solidi A207 3 730
[7] Li Y J, Zheng J G, Feng L H, Li B, Zeng G G, Cai Y P, Zhang J Q, Li W, Lei Z, Wu L L, Cai W 2010 Acta Phys. Sin. 59 0625 ( in Chinese) [李愿杰, 郑家贵, 冯良桓, 黎兵, 曾广根, 蔡亚平, 张静全, 李卫, 雷智, 武莉莉, 蔡伟 2010 59 0625]
[8] Kazuto Koike, Takanori Hotei, Ryou Kawaguchi, Mitsuaki Yano 2009 Journal of Crystal Growth 311 2102
[9] Kazuto Koike, Takayoshi Honden, Isao Makabe, FengPingYan, Mitsuaki Yano 2003 Journal of Crystal Growth 257 212
[10] Xu T N, Wu H Z, Si J X 2008 Acta Phys. Sin. 57 2574(in Chinese) [徐天宁, 吴惠桢, 斯剑霄 2008 57 2574]
[11] Kazuto Koike, Takashi Tanaka, Shuwei Li, Mitsuaki Yano 2001 Journal of Crysal Growth 227-228 671
[12] Si J X, Jin S Q, Zhang H J, Zhu P, Qiu D J, Wu H Z 2008 Appl. Phys. Lett. 93 202101
[13] Dziawa P, Taliashvili B, Domuchowski W, Kowalczyk L, Sakowska E, Mycielski A 2005 phys. stat. sol.(c) 2 3 1167
[14] Mitsuaki Yano, Kazuto Koike, Takeshi Furushou, TokuoYodo 1997 Journal of Crystal Growth 175/176 665
[15] Park S H, Park S E, Lee J C, Song P K, Lee J H 2009 J. Kor. Phys. Soc. 54 1344
[16] Zhang Q, Li X F, Li G F 2008 Thin solid films 517 613
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[1] Sporken R, Sivananthan S,Mahavadi K K,Monfroy G, Boukerche M, Faurie J P 1989 Appl. Phys. Lett. 55 1879
[2] Datta S, Furdyna J K, Gunshor R L 1985 Supperlatt.Microstruct. 1 327
[3] Britt J, Ferekidis C 1993 Appl. Phys. Lett. 62 2851
[4] Romeo N, Basio A, Tedeschi R, Canevari V 2000 Mater. Chem. Phys. 66 201
[5] Wu X Z 2004 Sol. Energy. 77 803
[6] Novruzov V D, Fathi N M, Gorur1 O, Tomakin M, Bayramov A I, Schorr S, Mamedov N 2010 Phys. Status Solidi A207 3 730
[7] Li Y J, Zheng J G, Feng L H, Li B, Zeng G G, Cai Y P, Zhang J Q, Li W, Lei Z, Wu L L, Cai W 2010 Acta Phys. Sin. 59 0625 ( in Chinese) [李愿杰, 郑家贵, 冯良桓, 黎兵, 曾广根, 蔡亚平, 张静全, 李卫, 雷智, 武莉莉, 蔡伟 2010 59 0625]
[8] Kazuto Koike, Takanori Hotei, Ryou Kawaguchi, Mitsuaki Yano 2009 Journal of Crystal Growth 311 2102
[9] Kazuto Koike, Takayoshi Honden, Isao Makabe, FengPingYan, Mitsuaki Yano 2003 Journal of Crystal Growth 257 212
[10] Xu T N, Wu H Z, Si J X 2008 Acta Phys. Sin. 57 2574(in Chinese) [徐天宁, 吴惠桢, 斯剑霄 2008 57 2574]
[11] Kazuto Koike, Takashi Tanaka, Shuwei Li, Mitsuaki Yano 2001 Journal of Crysal Growth 227-228 671
[12] Si J X, Jin S Q, Zhang H J, Zhu P, Qiu D J, Wu H Z 2008 Appl. Phys. Lett. 93 202101
[13] Dziawa P, Taliashvili B, Domuchowski W, Kowalczyk L, Sakowska E, Mycielski A 2005 phys. stat. sol.(c) 2 3 1167
[14] Mitsuaki Yano, Kazuto Koike, Takeshi Furushou, TokuoYodo 1997 Journal of Crystal Growth 175/176 665
[15] Park S H, Park S E, Lee J C, Song P K, Lee J H 2009 J. Kor. Phys. Soc. 54 1344
[16] Zhang Q, Li X F, Li G F 2008 Thin solid films 517 613
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