[1] |
Cao Wen-Yu, Zhang Ya-Ting, Wei Yan-Feng, Zhu Li-Juan, Xu Ke, Yan Jia-Sheng, Zhou Shu-Xing, Hu Xiao-Dong. Strain modulation effect of superlattice interlayer on InGaN/GaN multiple quantum well. Acta Physica Sinica,
2024, 73(7): 077201.
doi: 10.7498/aps.73.20231677
|
[2] |
Wu Yang, Hu Xiao, Liu Bo-Wen, Gu Yi, Zha Fang-Xing. Different spectral features near the energy bandgaps of normal and inverse heterostructures of In0.52Al0.48As/InP. Acta Physica Sinica,
2024, 73(2): 027801.
doi: 10.7498/aps.73.20231339
|
[3] |
Zhou Xiao-Hong, Yang Qing, Zou Jun-Tao, Liang Shu-Hua. Effects of growth conditions on the microstructures and photoluminescence properties of Ga-doped ZnO films. Acta Physica Sinica,
2015, 64(8): 087803.
doi: 10.7498/aps.64.087803
|
[4] |
Ma Li-Ya, Li Yu-Dong, Guo Qi, Ai Er-Ken, Wang Hai-Jiao, Zeng Jun-Zhe. Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials. Acta Physica Sinica,
2015, 64(15): 154217.
doi: 10.7498/aps.64.154217
|
[5] |
Lü You-Ming, Mei Ting, Su Shi-Chen. Fabrication and optical properties of ZnO/ZnMgO multiple quantum wells on m-sapphire substrates. Acta Physica Sinica,
2011, 60(9): 096801.
doi: 10.7498/aps.60.096801
|
[6] |
Ji Zi-Wu, Mino Hirofumi, Kojima Eiji, Akimoto Ryoichi, Takeyama Shojiro. Optical property of modulated n-doped ZnSe/BeTe type-Ⅱ quantum wells. Acta Physica Sinica,
2008, 57(5): 3260-3266.
doi: 10.7498/aps.57.3260
|
[7] |
Xiong Chuan-Bing, Jiang Feng-Yi, Wang Li, Fang Wen-Qing, Mo Chun-Lan. The investigation on the interference phenomenon in electroluminescence spectrum of vertical structured InGaAlN multiple quantum well light-emitting diodes. Acta Physica Sinica,
2008, 57(12): 7860-7864.
doi: 10.7498/aps.57.7860
|
[8] |
Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Huang Zhi-Ming, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Guo Shao-Ling, Chu Jun-Hao. Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands. Acta Physica Sinica,
2008, 57(4): 2481-2485.
doi: 10.7498/aps.57.2481
|
[9] |
Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Guo Shao-Ling, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Chu Jun-Hao. Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands. Acta Physica Sinica,
2008, 57(6): 3818-3822.
doi: 10.7498/aps.57.3818
|
[10] |
Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Li Dong-Lin, Gao Hong-Ling, Zeng Yi-Ping, Guo Shao-Ling, Yu Guo-Lin, Chu Jun-Hao. Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well. Acta Physica Sinica,
2008, 57(8): 5232-5236.
doi: 10.7498/aps.57.5232
|
[11] |
Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Zhu Bo, Cui Li-Jie, Gao Hong-Ling, Li Dong-Lin, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao. Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers. Acta Physica Sinica,
2007, 56(7): 4143-4147.
doi: 10.7498/aps.56.4143
|
[12] |
You Da, Xu Jin-Tong, Tang Ying-Wen, He Zheng, Xu Yun-Hua, Gong Hai-Mei. Research of two-dimensional hole gas in p-GaN/Al0.35Ga0.65N/GaN strained quantum-well. Acta Physica Sinica,
2006, 55(12): 6600-6605.
doi: 10.7498/aps.55.6600
|
[13] |
Xu Geng-Zhao, Liang Hu, Bai Yong-Qiang, Lau Kei-May, Zhu Xing. Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy. Acta Physica Sinica,
2005, 54(11): 5344-5349.
doi: 10.7498/aps.54.5344
|
[14] |
Xu Xiao-Hua, Niu Zhi-Chuan, Ni Hai-Qiao, Xu Ying-Qiang, Zhang Wei, He Zheng-Hong, Han Qin, Wu Rong-Han, Jiang De-Sheng. Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy. Acta Physica Sinica,
2005, 54(6): 2950-2954.
doi: 10.7498/aps.54.2950
|
[15] |
Xu Zhang-Cheng, Jia Guo-Zhi, Sun Liang, Yao Jiang-Hong, Xu Jing-Jun, J. M. Hvam, Wang Zhan-Guo. Time-resolved photoluminescence of sub-monolayer InGaAs/GaAs quantum-dot-quantum-well heterostructures. Acta Physica Sinica,
2005, 54(11): 5367-5371.
doi: 10.7498/aps.54.5367
|
[16] |
Wang Chong, Chen Ping-Ping, Zhou Xu-Chang, Xia Chang-Sheng, Wang Shao-Wei, Chen Xiao-Shuang, Lu Wei. Piezomodulated-reflectivity study of GaAs/Al0.29Ga0.71As single quantum well. Acta Physica Sinica,
2005, 54(7): 3337-3341.
doi: 10.7498/aps.54.3337
|
[17] |
Yuan Xian-Zhang, Miao Zhong-Lin. In-situ photo-modulated reflectance study on the interface of Al and GaAs surface quantum well. Acta Physica Sinica,
2004, 53(10): 3521-3524.
doi: 10.7498/aps.53.3521
|
[18] |
MIU ZHONG-LIN, CHEN PING-PING, LU WEI, XU WEN-LAN, LI ZHI-FENG, CAI WEI-YING. . Acta Physica Sinica,
2001, 50(1): 111-115.
doi: 10.7498/aps.50.111
|
[19] |
LI ZHI-FENG, LU WEI, LIU XING-QUAN, SHEN XUE-CHU, Y.FU, M.WILLANDER, H.H.TAN, C. JAGADISH. THE MICRO-PHOTOLUMINESCENCE OF A SINGLE V-GROOVE GaAs/AlGaAs QUANTUM WIRE. Acta Physica Sinica,
2000, 49(9): 1809-1813.
doi: 10.7498/aps.49.1809
|
[20] |
CHEN ZHANG-HAI, HU CAN-MING, CHEN JIAN-XIN, SHI GUO-LIANG, LIU PU-LIN, SHEN XUE-CHU, LI AI-ZHEN. STUDY ON CYCLOTRON RESONANCE SPECTRA OF TWO-DIMENSIONAL ELECTRON GASES IN PSEUDOMORPHIC InxGa1-xAs/In0.52Al0.48As HETEROJUNCTIONS. Acta Physica Sinica,
1998, 47(6): 1018-1025.
doi: 10.7498/aps.47.1018
|