The micro-photoluminescence(μ-PL) scan has been performed on a single V-groove GaAs/AlGaAs quantum wire in the direction perpendicular to the wire.The variatio n of μ-PL spectra from various quantum structures with different spatial positi ons has been observed.In the region of quantum wire (QWR) the PL spectra contain the peaks from QWR,necking quantum well (NQWL) and vertical quantum well (VQWL) ,while in the area about 1μm and farther away from the QWR the PL spectra show the peaks from side-wall quantum well (SQWL) and top quantum well (TQWL).All the scanned PL spectra have been fitted by Gauss line shape.The asymmetric PL peaks of QWR and SQWL were decomposed into two components which were ascribed to the optical transitions between the electron ground state in the conduction band and the heavy hole and the light hole ground states in the valence band.The variati on of PL intensity from luminescent components with the spatial positions direct ly demonstrates the origin of the photoluminescence relating to different quantu m structures,and reflects the carrier transfer from SQWL to QWR,resulting in th e PL quenching of SQWL.