金属-氧化物-半导体硅发光器件在集成电路中的应用前景

张宁; 徐开凯; 陈彦旭; 朱坤峰; 赵建明; 于奇

doi:10.7498/aps.68.20191004

摘要

集成硅光电子学的目的之一就是为大众市场创造应用广泛、成本低廉的光子互连工具. 随着摩尔定律逼近理论极限, 集成芯片的金属互连越来越跟不上芯片体积微型化、频率高速化和功耗分配精益化的需求. 本文基于硅基发光器件的发展历程, 详细论证了金属-氧化物-半导体结构硅发光器件在未来集成电路中的合理应用, 提出了全硅光电集成电路在理论和工艺上的可行性. 这种电路突破了传统芯片电互连码之间串扰的瓶颈, 改善之后的互连速度理论可达光速, 有望成为新一代集成芯片的主流.

关键词:

硅光电子学 /
光互连 /
光源

Abstract

Photonic interconnects have potentials to break increasingly severe energy efficiency and bandwidth density bottlenecks of electrical interconnect in scaled complementary metal oxide semiconductor (CMOS) integrated circuits, leading to the emergence of optoelectronic integrated circuits (OEICs) that utilize electronic and photonic devices together in a synergistic way to achieve better performance than those based on pure electronic device technology. By reviewing the progresses of Si-based light-emitting device, the schematic of MOS-like light source integrated with waveguides and the following photodetector is analyzed for its availability. It is believed that on-chip optical interconnects could be achieved by standard CMOS technology successfully with the speed as fast as the velocity of light, supplying propulsions for nest-generation OEICs.

Keywords:

作者及机构信息

1.
电子科技大学, 电子薄膜与集成器件国家重点实验室, 成都　610054

2.
中国电子科技集团公司, 模拟集成电路国家级重点实验室, 重庆　400060

通信作者: 徐开凯, kaikaix@uestc.edu.cn

基金项目: 国家自然科学基金(批准号: 61674001, 61704019)和重庆市重点协作基金(批准号: 180482)资助的课题.

Authors and contacts

1.
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

2.
Science and Technology on Analog Integrated Circuits Laboratory, Chongqing 400060, China

Corresponding author: Xu Kai-Kai, kaikaix@uestc.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61674001, 61704019) and the Key Collaboration Grant in Chongqing, China (Grant No. 180482).

文章全文 : translate this paragraph

参考文献

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[21]	Xu K, Ogudo A, Polleux J, Viana C, Ma Z, Li Z, Yu Q, Li G, Snyman L 2016 Leukos 12 203 Google Scholar
[22]	Xu K 2016 IEEE Sensors J. 16 61846
[23]	Yamada S, Kitao M 1993 Jpn. J. Appl. Phys. 32 45
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施引文献

图 1 (a) Snyman和Bennett^[4]提出的器件结构图; (b) Xu等^[6]使用CMOS技术制作的Si-LED结构图

Fig. 1. (a) The device structure diagram proposed by Snyman and Bennett^[4]; (b) the Si-LED structure diagram produced by Xu et al^[6], using CMOS technology

下载: 全尺寸图片幻灯片

图 2 利用Ⅲ-Ⅴ族混合集成激光器制作的两种光电互连结构的集成芯片

Fig. 2. Integrated chip of two photoelectric interconnection structures made by a Ⅲ - Ⅴ hybrid integrated laser.

下载: 全尺寸图片幻灯片

图 3 (a)单PN结硅光源; (b) BJT结构硅光源; (c) MOS结构硅光源^[19–21]

Fig. 3. (a) Single PN junction silicon source; (b) BJT structure silicon source; (c) MOS structure silicon source^[19–21].

下载: 全尺寸图片幻灯片

图 4 PMOSFET Si发光器件在三端门控模式下的电特性^[26]

Fig. 4. Simulated electric characteristics of the PMOSFET Si light emitting device in the three-terminal gated mode^[26].

下载: 全尺寸图片幻灯片

图 5 三端硅-PMOSFET LED的3D结构图^[26]

Fig. 5. 3D structure of three-terminal silicon-PMOSFET LED^[26]

下载: 全尺寸图片幻灯片

map

[1]	Zhang Z, Xu K, Yuan J, Wang Y, Ogudo A, Viana C, Polleux J, Yu Q, Snyman L, Wang Y, Hu R 2016 J. Optoelectron. Adv. Mater. 18 737
[2]	Huang B, Zhang X, Wang W, Dong Z, Guan N, Zhang Z, Chen H 2011 Opt. Commun. 284 3924 Google Scholar
[3]	Heidrich H, Kaiser R, Albrecht P, Fidorra S, Hamacher M, Rehbein W 2001 Appl. Phys. B 73 581 Google Scholar
[4]	Soref R A, Bennett B R 1987 Inte. Soc. Opt. Photon. 704 32
[5]	Xu K, Snyman L, Aharoni H 2017 Opt. Mater. 69 274 Google Scholar
[6]	Xu K, Ogudo K, Snyman L 2017 Adv. Mater.: Rapid Commun. 11 16
[7]	Lee K K, Lim D R, Luan H C, Agarwal A, Foresi J, Kimerling L C 2000 Appl. Phys. Lett. 77 1617 Google Scholar
[8]	Vlasov Y, Green W M J, Xia F 2008 Nature Photon. 2 242 Google Scholar
[9]	Brimont A, Thomson D J, Gardes F Y, Fedeli J M, Reed G T, Martí J, Sanchis P 2012 Opt. Lett. 37 3504 Google Scholar
[10]	Jutzi M, Berroth M, Wohl G, Oehme M, Kasper E 2005 IEEE Photon. Technol. Lett. 17 1510 Google Scholar
[11]	Chen S, Li W, Wu J 2016 Nature Photon. 10 307 Google Scholar
[12]	Henderson-Sapir O, Jackson S D, Ottaway D J 2016 Opt. Lett. 41 1676 Google Scholar
[13]	Canham L T 1990 Appl. Phys. Lett. 57 1046 Google Scholar
[14]	Hirschman K D, Tsybeskov L, Duttagupta S P 1996 Nature 384 338 Google Scholar
[15]	Pavesi L, Dal Negro L, Mazzoleni C, Franzo G, Priolo D F 2000 Nature 408 440 Google Scholar
[16]	Luan H C, Lim D R, Lee K K 1999 Appl. Phys. Lett. 75 2909 Google Scholar
[17]	Camacho-Aguilera R E, Cai Y, Patel N, Bessette J T, Romagnoli M, Kimerling L C, Michel J 2012 Opt. Express 20 11316 Google Scholar
[18]	Liu Z, Hu W, Li C, Li Y, Xue C, Li C, Wang Q 2012 Opt. Express 20 22327 Google Scholar
[19]	Dutta S, Hueting R J E, Annema A, Qi L, Nanver L K, Schmitz J 2015 J. Appl. Phys. 118 114
[20]	Snyman L, Du Plessis M, Aharoni H 2007 Jpn. J. Appl. Phys. 46 24 Google Scholar
[21]	Xu K, Ogudo A, Polleux J, Viana C, Ma Z, Li Z, Yu Q, Li G, Snyman L 2016 Leukos 12 203 Google Scholar
[22]	Xu K 2016 IEEE Sensors J. 16 61846
[23]	Yamada S, Kitao M 1993 Jpn. J. Appl. Phys. 32 45
[24]	Snyman L, Xu K, Polleux J, Ogudo A, Viana C 2015 IEEE J. Quantum Electron. 51 1
[25]	Wang W, Huang B, Dong Z, Chen H 2011 Chin. Phys. B 20 018
[26]	Xu K, Li G P 2012 IEEE Photon. J. 4 2159 Google Scholar
[27]	Kuindersma P I, Hoang T, Schmitz J 2008 IEEE International Conference on Group IV Photonics Sorrento, Italy 5th, 2008 p256
[28]	Xu K 2014 IEEE Trans. Electron Dev. 61 2085 Google Scholar
[29]	Marris D, Cassan E, Vivien L 2004 J. Appl. Phys. 96 6109 Google Scholar

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金属-氧化物-半导体硅发光器件在集成电路中的应用前景