硅基二氧化钒相变薄膜电学特性研究

熊瑛; 文岐业; 田伟; 毛淇; 陈智; 杨青慧; 荆玉兰

doi:10.7498/aps.64.017102

摘要

本文以原子层沉积超薄氧化铝(Al2 O3)为过渡层, 采用射频反应磁控溅射法在硅半导体基片上制备了颗粒致密并具有(011)择优取向的二氧化钒(VO2)薄膜. 该薄膜具有显著的绝缘体金属相变特性, 相变电阻变化超过3 个数量级, 热滞回线宽度约为6℃. 基于VO2薄膜构建了平面二端器件并测试了不同温度下I-V曲线, 观测到超过2个数量级的电流跃迁幅度, 显示了优越的电致相变特性. 室温下电致相变阈值电压为8.6 V, 电致相变弛豫电压宽度约0.1 V. 随着温度升高到60℃, 其电致相变所需要的阈值电压减小到2.7 V. 本实验制备的VO2薄膜在光电存储、开关、太赫兹调控器件中具有广泛的应用价值.

关键词:

Abstract

Quality enhanced VO2 thin films have been sputtering deposited on silicon substrates by introducing an ultrathin Al2 O3 buffer between the substrate and the film. With a preferred orientation (011), the VO2 films have an excellent thermal-induced metal-insulator transition (MIT). The electrically-driven MIT (E-MIT) characteristics have also been investigated by applying voltage to VO2 thin film based two-terminal device at particular temperatures. Sharp jumps in electric current are observed in the I-V curve with a variation of amplitude by two orders. The threshold voltage decreases with increasing temperature. At room tempature, the threshold voltage is 8.6V and the phase transition ccurs in a voltage width of only 0.1V. With the sharp and fast phase change, the VO2 thin films can be used in ultrafast switching electronic devices.

Keywords:

vanadium dioxide /
electrically-driven metal-insulator transition /
silicon substrate /
aluminium oxide

作者及机构信息

1.
电子科技大学, 电子薄膜与集成器件国家重点实验室, 成都 610054;

2.
电子科技大学, 通信抗干扰技术国家级重点实验室, 成都 610054

基金项目: 国家自然科学基金重点项目(批准号: 61131005), 教育部科学技术研究重大项目(批准号: 313013), 国家高技术研究发展计划(批准号: 2011AA010204), 教育部新世纪优秀人才资助计划(批准号: NCET-11-0068), 四川省杰出青年学术技术带头人计划(批准号: 2011JQ0001), 高校博士点专项科研基金(批准号: 20110185130002)资助的课题.

Authors and contacts

1.
State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

2.
National Key Laboratory of Science and Technology of Communication, University of Electronic Science and Technology of China, Chengdu 610054, China

Funds: This work is financially supported by National Nature Science Foundation of China (Grant No. 61131005), Keygrant Project of Chinese Ministry of Education (Grant No. 313013), National High-tech Research and Development Projects (Grant No. 2011AA010204), New Century Excellent Talent Foundation (Grant No. NCET-11-0068), Sichuan Youth S T foundation (Grant No. 2011JQ0001), and the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20110185130002).

参考文献

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[26]	Crunteanu A, Givernaud J, Leroy J, Mardivirin D, Champeaux C, OrliangesJ C, Catherinot A, Blondy P 2010 Sci. Technol. Adv. Mater. 11 065002
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[29]	Kim H T, Chae B G, Youn D H, Maeng S L, Kim G, Kang K Y, Lim Y S 2004 New J. Phys. 6 52

施引文献

[1]	Morin F J 1959 Phys. Rev. Lett. 3 34
[2]	Lysenko S, Rua A J, Vikhnin V, Jimenez J, Fernandez F, Liu H 2006 Appl. Surf. Sci. 252 5512
[3]	Guzman G, Beteille F, Morineau R, Livage J 1996 J. Mater. Chem. 6 505
[4]	Ko C and Ramanathan S 2008 Appl. Phys. Lett. 93 252101
[5]	Cao J, Ertekin E, Srinivasan V, Fan W, Huang S, Zheng H, Yim J W L, Khanal D R, Ogletree D F, Grossman J C, Wu J 2009 Nat. Nanotechnol. 4 732
[6]	Zhao Y, Lee J H, Zhu Y H, Nazari M, Chen C H, Wang H Y, BernussiA, Holtz M, Fan Z Y 2012 J. Appl. Phys. 111 0535339
[7]	Ruzmetov D, Zawilski K T, Narayanamurti V, and Ramanathana S 2007 Journal of Appl. Phys. 102 13715
[8]	Kucharczy k D, Niklew ski T 1979 J. Appl. Cryst. 12 370
[9]	Zylbersztejn A Mott N F 1975 Phys. Rev. B 11 4383
[10]	Kanki T, Hotta Y, Asakawa N, Kawai T, Tanaka H 2010 Appl. Phys. Lett. 96 242108
[11]	Jeong J, Aetukuri N, Graf T, Schladt T D, Samant M G, Parkin, SSP 2013 Science 339 6126
[12]	Okimura K, Sakai J, Ramanathan S 2010 Journal of Applied Physics 107 063503
[13]	Wu T L, Whittaker L, Banerjee S, and Sambandamurthy G 2011 Phys. Rev. B 83 073101
[14]	Seo G, Kim B J, Ko C, Cui Y, Lee Y W, Shin J H, Ramanathan S, Kim H T 2011 IEEE Electron Device Lett. 32 1582
[15]	Mo M M, Wen Q Y, Chen Z, Yang Q H, Qiu D H, Li S, Jing Y L, Zhang H W 2014 Chin. Phys. B 23 047803
[16]	Wen Q Y, Zhang H W, Yang Q H, Xie Y S, Chen K, Liu Y L 2010 Appl. Phys. Lett. 97 021111
[17]	Stefanovich G, Pergament A, Stefanovich D 2000 J. Phys.: Condens. Matter 12 8837
[18]	Zhou Y, Chen X N, Ko Changhyun, Yang Z, Mouli C, Ramanathan S 2013 IEEE Electron Device Lett. 34 220
[19]	Tu K N, Ziegler J F, Kircher C J 1973 Appl. Phys. Lett. 23 493
[20]	Yuan N Y, Li J H, Li G, Chen X S 2006 Thin Solid Films 515 1275
[21]	Wang L X, Li J P, He X L, Gao X G 2006 Acta Phys. Sin. 55 6 (in Chinese) [王利霞, 李建平, 何秀丽, 高晓光2006 55 6]
[22]	Qiu D H, Wen Q Y, Yang Q H, Chen Z, Jing Y L, Zhang H W 2013 Acta Phys. Sin. 62 217201 (in Chinese) [邱东鸿, 文岐业, 杨青慧, 陈智,荆玉兰, 张怀武 2013 62 217201]
[23]	Fabien Béteille, Léo Mazerolles 1999 Materials Research Bulletin 34 2121
[24]	Borek M, Qian F, N agabushnam V, Singh R K 1993 Appl. Phys. Lett. 63 3288
[25]	Zhao Y, Lee J H, Zhu Y H, Nazari M, Chen C H, Wang H Y, Bernussi A, Holtz M, Fan Z Y 2012 J. Appl. Phys. 111 053533
[26]	Crunteanu A, Givernaud J, Leroy J, Mardivirin D, Champeaux C, OrliangesJ C, Catherinot A, Blondy P 2010 Sci. Technol. Adv. Mater. 11 065002
[27]	Dumas-Bouchiat F, Champeaux C, Catherinot A, Crunteanu A, Blondy P 2007 Appl. Phys. Lett. 91 223505
[28]	Chae B G, Kim H T, Youn D H, Kang K Y 2005 Physica B-Condensed Matter 369 1
[29]	Kim H T, Chae B G, Youn D H, Maeng S L, Kim G, Kang K Y, Lim Y S 2004 New J. Phys. 6 52

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