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Indium-zinc-oxide thin-film transistors (IZO-TFTs) are prepared with the multilayer structure of molybdenum-aluminum-molybdenum (Mo/Al/Mo) as the source/drain (S/D) electrode. Experiment demonstrates that the sputtering power of Mo (bottom layer of Mo/Al/Mo S/D) influences the performance of TFTs significantly. As the sputtering power increases, the Von runs negative shift, and the device uniformity degrades. XPS depth profile shows that the diffusion at the interface (IZO/Mo) occurs seriously. By decreasing the sputtering power, the diffusion can be suppressed and the devices are shown in normal off state (Von ～ 0.5 V, enhanced mode), with higher mobility (～ 13 cm2·V-1·s-1) and improved uniformity.
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Keywords:
- indium-zinc-oxide /
- source/drain electrode /
- sputtering power /
- thin-film transistor
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[8] Lee Y W, Kim S J, Lee S Y, Lee W G, Yoon K S, Park J W, Kwon J Y, Han M K 2012 Electrochemical and Solid-State Letters. 15 H126
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[10] Luo D X, Lan L F, Xu M, Xu H, Li M, Wang L, Peng J B 2012 J. Electrochem. Soc. 159 H502
[11] Xu H, Lan L F, Xu M, Zou J H, Wang L, Wang D, Peng J B 2011 Appl. Phys. Lett. 99 253501
[12] Lan L F, Xu M, Peng J B, Xu H, Li M, Luo D X, Zou J H, Tao H, Wang L, Yao R H 2011 J. Appl. Phys. 110 103703
[13] Lan L F, Xiong N N, Xiao P, Li M, Xu H, Yao R H, Wen S S, Peng J B 2013 Appl. Phys. Lett. 102 242102
[14] Kamiya T, Nomura K, Hosono H 2010 Sci. Technol. Adv. Mater. 11 044305
[15] Kim H, Kim K K, Lee S N, Ryou J H, Dupuis R D 2011 Appl. Phys. Lett. 98 112107
[16] Hosono H 2006 Journal of Non-Crystalline Solids 352 851
[17] Ryu B, Noh H K, Choi E A, Chang K J 2010 Appl. Phys. Lett. 97 022108
[18] Suzuki T 2006 J. Appl. Phys. 99 111101
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[1] Carcia P F, McLean R S, Reilly M H, Nunes G 2003 Appl. Phys. Lett. 82 1117
[2] Li X F, Xin E L, Shi J F, Chen L L, Zhang C Y, Zhang J H 2013 Acta Phys. Sin. 62 108503 (in Chinese) [李喜峰, 信恩龙, 石继锋, 陈龙龙, 李春亚, 张建华 2013 62 108503]
[3] Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488
[4] Hoffman R L, Norris B J, Wager J F 2003 Appl. Phys. Lett. 82 733
[5] Li M, Lan L F, Xu M, Wang L, Xu H, Luo D X, Zou J H, Tao H, Yao R H, Peng J B 2011 J. Phys. D: Appl. Phys. 44 455102
[6] Liu Y R, Wang Z X, Yu J L, Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣, 王智欣, 虞佳乐, 徐海红 2009 58 8556]
[7] Wang X, Cai X K, Yan Z J, Zhu X M, Qiu D J, Wu H Z 2011 Acta Phys. Sin. 60 037305 (in Chinese) [王雄, 才玺坤, 原子健, 朱夏明, 邱东江, 吴惠桢 2011 60 037305]
[8] Lee Y W, Kim S J, Lee S Y, Lee W G, Yoon K S, Park J W, Kwon J Y, Han M K 2012 Electrochemical and Solid-State Letters. 15 H126
[9] Hwang S S, Jung S Y, Joo Y C 2007 J. Appl. Phys. 101 074501
[10] Luo D X, Lan L F, Xu M, Xu H, Li M, Wang L, Peng J B 2012 J. Electrochem. Soc. 159 H502
[11] Xu H, Lan L F, Xu M, Zou J H, Wang L, Wang D, Peng J B 2011 Appl. Phys. Lett. 99 253501
[12] Lan L F, Xu M, Peng J B, Xu H, Li M, Luo D X, Zou J H, Tao H, Wang L, Yao R H 2011 J. Appl. Phys. 110 103703
[13] Lan L F, Xiong N N, Xiao P, Li M, Xu H, Yao R H, Wen S S, Peng J B 2013 Appl. Phys. Lett. 102 242102
[14] Kamiya T, Nomura K, Hosono H 2010 Sci. Technol. Adv. Mater. 11 044305
[15] Kim H, Kim K K, Lee S N, Ryou J H, Dupuis R D 2011 Appl. Phys. Lett. 98 112107
[16] Hosono H 2006 Journal of Non-Crystalline Solids 352 851
[17] Ryu B, Noh H K, Choi E A, Chang K J 2010 Appl. Phys. Lett. 97 022108
[18] Suzuki T 2006 J. Appl. Phys. 99 111101
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