搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

大尺寸高质量CH3NH3PbCl3钙钛矿单晶的生长机理、相转变与光学性能

南瑞华 武春燕 刘腾 罗家欣 魏永星 坚增运

引用本文:
Citation:

大尺寸高质量CH3NH3PbCl3钙钛矿单晶的生长机理、相转变与光学性能

南瑞华, 武春燕, 刘腾, 罗家欣, 魏永星, 坚增运

Growth mechanism, phase transition and optical properties of large-size and high-quality perovskite CH3NH3PbCl3 single crystal

Nan Rui-Hua, Wu Chun-Yan, Liu Teng, Luo Jia-Xin, Wei Yong-Xing, Jian Zeng-Yun
PDF
HTML
导出引用
  • 在传统逆温差结晶法基础上, 通过引入高质量籽晶, 采用籽晶诱导逆温差结晶法生长出尺寸为11 mm ×11 mm × 2 mm的CH3NH3PbCl3钙钛矿单晶. X射线衍射和Rietveld精修结果表明, 室温下CH3NH3PbCl3单晶是立方相, 其空间群为Pm$\bar{3}$m, 晶格常数a = 0.56877 nm. 偏光显微镜研究结果表明, CH3NH3PbCl3单晶的生长机理遵循光滑界面的台阶横向长大机制, 并沿着台阶的外法线方向长大. 变温拉曼光谱研究表明CH3NH3PbCl3单晶在温度160 K发生了正交-四方相转变, 但四方相结构不稳定, 存在的温度区间非常狭窄, 故再次转变为立方相(Pm$\bar{3}$m). 紫外-可见-近红外吸收光谱和光致发光谱研究表明, CH3NH3PbCl3单晶的吸收截止边约在波长442 nm, 光致发光峰为450 nm, 通过拟合计算得到其带隙值约为2.93 eV, 稍大于第一性原理计算的理论帯隙值(2.55 eV), 分析认为这与籽晶的引入有关, 因为籽晶作为异质形核的核心被引入晶体生长过程中, 使晶格对称性下降, 引起CH3NH3PbCl3帯隙增大.
    According to the phenomenon that the solubility of CH3NH3PbCl3 decreases with the increase of temperature in different solvents, CH3NH3PbCl3 perovskite single crystal with a maximum dimension of 11 mm × 11 mm × 2 mm is grown by introducing a high-quality seed crystal via the seed-induced inverse temperature crystallization method in this work. X-ray diffraction and Rietveld refinements show that the full widths at half maximum (FWHM) of CH3NH3PbCl3 single crystal diffraction peaks are 0.1527°, 0.1353°, 0.2295° and 0.3452°, corresponding to the crystal plane indices of (100), (200), (300) and (400), respectively. And there are no miscellaneous peaks, indicating a good crystal quality. As a result, CH3NH3PbCl3 single crystal is of cubic phase at room temperature, its space group belongs to Pm$ \bar{3} $m, and the lattice constant is a = 0.56877 nm. The surface morphology and growth mechanism of CH3NH3PbCl3 crystal are investigated by using a polarizing microscope. It is found that its growth mechanism follows the step horizontal growing mechanism of smooth interface, and its growth direction (that is, step movement direction) is along the outward normal direction of the step. The structural symmetry of CH3NH3PbCl3 crystal is studied by variable temperature Raman spectroscopy, which reveals an orthogonal-tetragonal phase transition at 160 K. But the tetragonal phase structure is not stable, and its temperature range is very narrow. As temperature rises gradually, the tetragonal phase again transforms into a cubic phase (Pm$\bar{3}$m). Results of UV-Vis-NIR absorption and photoluminescence spectra show that the absorption cutoff of CH3NH3PbCl3 crystal is about 442 nm, and the photoluminescence peak is 450 nm. Thereupon, its band gap is obtained to be about 2.93 eV by a linear fit of Tauc formula, which is slightly higher than the theoretical value of 2.55 eV calculated by first principles simulation. We believe that it is related to the seed crystal, which is introduced into the crystal growth process as the core of heterogeneous nucleation and thus making the lattice more distorted. The lower the lattice symmetry of CH3NH3PbCl3, the larger the band gap is, that is, the lattice symmetry determines the degree of distortion for inorganic PbCl6 octahedral frameworks, resulting in an increase of band gap for CH3NH3PbCl3.
      通信作者: 南瑞华, nanrh@xatu.edu.cn
    • 基金项目: 陕西省自然科学基础研究计划(批准号: 2022JM212)资助的课题.
      Corresponding author: Nan Rui-Hua, nanrh@xatu.edu.cn
    • Funds: Project supported by the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2022JM212).
    [1]

    Turedi B, Lintangpradipto M N, Sandberg O J, Yazmaciyan A, Matt G J, Alsalloum A Y, Almasabi K, Sakhatskyi K, Yakunin S, Zheng X, Naphade R, Nematulloev S, Yeddu V, Baran D, Armin A, Saidaminov M I, Kovalenko M V, Mohammed O F, Bakr O M 2022 Adv. Mater. 34 2202390Google Scholar

    [2]

    Xing G, Mathews N, Sun S, Lim S S, Lam Y M, Grätzel M, Mhaisalkar S, Sum T C 2013 Science 342 344Google Scholar

    [3]

    Wang S, Yang F, Zhu J, Cao Q, Zhong Y, Wang A, Du W, Liu X 2020 Sci. China Mater. 63 1438Google Scholar

    [4]

    Stranks S D, Eperon G E, Grancini G, Menelaou C, Alcocer M J P, Leijtens T, Herz L M, Petrozza A, Snaith H J 2013 Science 342 341Google Scholar

    [5]

    Zhang Y, Liu Y, Liu S 2022 Adv. Funct. Mater. 32 2210335Google Scholar

    [6]

    Chen H, Ye F, Tang W, He J, Yin M, Wang Y, Xie F, Bi E, Yang X, Grätzel M, Han L 2017 Nature 550 92Google Scholar

    [7]

    Li M, Zhao C, Wang Z, Zhang C, Lee H K H, Pockett A, Barbé J, Tsoi W C, Yang Y, Carnie M J, Gao X, Yang W, Durrant J R, Liao L, Jain S M 2018 Adv. Energy Mater. 8 1801509Google Scholar

    [8]

    Wang Y, Chen W, Wang L, Tu B, Chen T, Liu B, Yang K, Koh C W, Zhang X, Sun H, Chen G, Feng X, Woo H Y, Djurišic´ A B, He Z, Guo X 2019 Adv. Mater. 31 1902781Google Scholar

    [9]

    Quan L N, García de Arquer F P, Sabatini R P, Sargent E H 2018 Adv. Mater. 30 1801996Google Scholar

    [10]

    Cao Y, Wang N, Tian H, Guo J, Wei Y, Chen H, Miao Y, Zou W, Pan K, He Y, Cao H, Ke Y, Xu M, Wang Y, Yang M, Du K, Fu Z, Kong D, Dai D, Jin Y, Li G, Li H, Peng Q, Wang J, Huang W 2018 Nature 562 249Google Scholar

    [11]

    Zhang Q, Su R, Liu X, Xing J, Sum T C, Xiong Q 2016 Adv. Funct. Mater. 26 6238Google Scholar

    [12]

    Wang K, Wang S, Xiao S, Song Q 2018 Adv. Optical Mater. 6 1800278Google Scholar

    [13]

    Li D, Cheng H, Wang Y, Zhao Z, Wang G, Wu H, He Q, Huang Y, Duan X 2017 Adv. Mater. 29 1601959Google Scholar

    [14]

    Yu W, Li F, Yu L, Niazi M R, Zou Y, Corzo D, Basu A, Ma C, Dey S, Tietze M L, Buttner U, Wang X, Wang Z, Hedhili M N, Guo C, Wu T, Amassian A 2018 Nat. Commun. 9 5354Google Scholar

    [15]

    Tian W, Zhou H, Li L 2017 Small 13 1702107Google Scholar

    [16]

    Pan W, Wei H, Yang B 2020 Front. Chem. 8 268Google Scholar

    [17]

    Andričević P, Frajtag P, Lamirand V P, Pautz A, Kollár M, Náfrádi B, Sienkiewicz A, Garma T, Forró L, Horváth E 2021 Adv. Sci. 8 2001882Google Scholar

    [18]

    Ma L, Yan Z, Zhou X, Pi Y, Du Y, Huang J, Wang K, Wu K, Zhuang C, Han X 2021 Nat. Commun. 12 2023Google Scholar

    [19]

    Shen H, Nan R, Jian Z, Li X 2019 J. Mater. Sci. 54 11596Google Scholar

    [20]

    Wang W, Meng H, Qi H, Xu H, Du W, Yang Y, Yi Y, Jing S, Xu S, Hong F, Qin J, Huang J, Xu Z, Zhu Y, Xu R, Lai J, Xu F, Wang L, Zhu J 2020 Adv. Mater. 32 2001540Google Scholar

    [21]

    Ryu S, Noh J H, Jeon N J, Kim Y C, Yang W S, Seoa J, Seok S I 2014 Energy Environ. Sci. 7 2614Google Scholar

    [22]

    Cheng X, Jing L, Zhao Y, Du S, Ding J, Zhou T 2018 J. Mater. Chem. C 6 1579Google Scholar

    [23]

    Zheng E, Yuh B, Tosado G A, Yu Q 2017 J. Mater. Chem. C 5 3796Google Scholar

    [24]

    Liu Y, Yang Z, Cui D, Ren X, Sun J, Liu X, Zhang J, Wei Q, Fan H, Yu F, Zhang X, Zhao C, Liu S 2015 Adv. Mater. 27 5176Google Scholar

    [25]

    Ding J, Cheng X, Jing L, Zhou T, Zhao Y, Du S 2018 ACS Appl. Mater. Interfaces 10 845Google Scholar

    [26]

    Mosconi E, Amat A, Nazeeruddin M K, Grätzel M, Angelis F D 2013 J. Phys. Chem. C 117 13902Google Scholar

    [27]

    Zhang F, Zhong H, Chen C, Wu X, Hu X, Huang H, Han J, Zou B, Dong Y 2015 ACS Nano 9 4533Google Scholar

    [28]

    Bernasconi A, Page K, Dai Z, Tan L Z, Rappe A M, Malavasi L 2018 J. Phys. Chem. C 122 28265Google Scholar

    [29]

    Songvilay M, Wang Z, Sakai V G, Guidi T, Bari M, Ye Z G, Xu G, Brown K L, Gehring P M, Stock C 2019 Phys. Rev. Mater. 3 125406Google Scholar

    [30]

    Ivanovska T, Quarti C, Grancini G, Petrozza A, Angelis F D, Milani A, Ruani G 2016 Chem. Sus. Chem 9 2994Google Scholar

    [31]

    Wang H, Nan R, Jian Z, Jin C, Wei Y, Bai Y, Li H 2021 Mater. Sci. Semicond. Process. 135 106107Google Scholar

    [32]

    Singleton J, Rabe K M 2002 Phys. Today 55 61Google Scholar

  • 图 1  籽晶诱导逆温差结晶法生长CH3NH3PbCl3单晶 (a)原理示意图; (b) CH3NH3PbCl3在DMF和DMSO混合溶剂中的溶解度曲线

    Fig. 1.  CH3NH3PbCl3 single crystal grown by seed-induced inverse temperature crystallization method: (a) Schematic diagram of principle; (b) temperature-dependent solubility curve of CH3NH3PbCl3 in DMF+DMSO mixed solution.

    图 2  CH3NH3PbCl3单晶生长 (a)单晶生长温度工艺曲线; (b)单晶宏观形貌图(尺寸为11 mm × 11 mm × 2 mm)

    Fig. 2.  CH3NH3PbCl3 single crystal growth: (a) Temperature control curve of single crystal growth; (b) macroscopic morphology of single crystal (Size: 11 mm × 11 mm × 2 mm).

    图 3  籽晶诱导逆温差结晶法生长CH3NH3PbCl3单晶 (a) 单晶XRD图谱; (b)粉末XRD与Material studio模拟的标准XRD图谱; (c) 粉末XRD Rietveld精修结果(Rp = 12.6%, Rwp = 18.5%)

    Fig. 3.  CH3NH3PbCl3 single crystal grown by seed-induced inverse temperature crystallization method: (a) XRD pattern of single crystal; (b) powder XRD and standard XRD pattern simulated by Material studio; (c) Rietveld result of powder XRD pattern (Rp = 12.6%, Rwp = 18.5%).

    图 4  CH3NH3PbCl3单晶的偏光显微形貌图 (a)单晶整体; (b)单晶局部放大图

    Fig. 4.  Polarizing micromorphology of CH3NH3PbCl3 single crystal: (a) Whole crystal; (b) partial magnification of single crystal.

    图 5  (a) CH3NH3PbCl3单晶的UV-Vis-NIR吸收光谱和PL光谱; (b) 通过拟合得到的帯隙值(蓝色散点是实验数据, 黑色实线是拟合结果Eg = 2.93 eV)

    Fig. 5.  (a) UV-Vis-NIR absorption and PL spectra of CH3NH3PbCl3 single crystal; (b) band gap obtained by fitting (Blue scatter dots are the experimental data, and the black solid line is the fitting result of Eg = 2.93 eV).

    图 6  CH3NH3PbCl3单晶的变温拉曼光谱 (a), (b) 80—300 K; (c), (d) 150—170 K; (e) 158 K; (f) 160 K; (g) 不同温度下CH3NH3PbCl3晶体结构(立方/四方/正交)的拉曼谱

    Fig. 6.  Temperature-dependent Raman spectra of CH3NH3PbCl3 single crystal: (a), (b) 80–300 K; (c), (d) 150–170 K; (e) 158 K; (f) 160 K; (g) Raman spectra of CH3NH3PbCl3 crystal structures (cubic/tetragonal/orthogonal) at different temperatures.

    图 7  第一性原理计算CH3NH3PbCl3的能带结构和态密度(a) 能带图谱; (b) 总态密度图; (c) 分波态密度图

    Fig. 7.  Energy band structure and DOS for CH3NH3PbCl3 calculated by first-principles simulation: (a) Energy band structure diagram; (b) total DOS diagram; (c) partial DOS diagram.

    Baidu
  • [1]

    Turedi B, Lintangpradipto M N, Sandberg O J, Yazmaciyan A, Matt G J, Alsalloum A Y, Almasabi K, Sakhatskyi K, Yakunin S, Zheng X, Naphade R, Nematulloev S, Yeddu V, Baran D, Armin A, Saidaminov M I, Kovalenko M V, Mohammed O F, Bakr O M 2022 Adv. Mater. 34 2202390Google Scholar

    [2]

    Xing G, Mathews N, Sun S, Lim S S, Lam Y M, Grätzel M, Mhaisalkar S, Sum T C 2013 Science 342 344Google Scholar

    [3]

    Wang S, Yang F, Zhu J, Cao Q, Zhong Y, Wang A, Du W, Liu X 2020 Sci. China Mater. 63 1438Google Scholar

    [4]

    Stranks S D, Eperon G E, Grancini G, Menelaou C, Alcocer M J P, Leijtens T, Herz L M, Petrozza A, Snaith H J 2013 Science 342 341Google Scholar

    [5]

    Zhang Y, Liu Y, Liu S 2022 Adv. Funct. Mater. 32 2210335Google Scholar

    [6]

    Chen H, Ye F, Tang W, He J, Yin M, Wang Y, Xie F, Bi E, Yang X, Grätzel M, Han L 2017 Nature 550 92Google Scholar

    [7]

    Li M, Zhao C, Wang Z, Zhang C, Lee H K H, Pockett A, Barbé J, Tsoi W C, Yang Y, Carnie M J, Gao X, Yang W, Durrant J R, Liao L, Jain S M 2018 Adv. Energy Mater. 8 1801509Google Scholar

    [8]

    Wang Y, Chen W, Wang L, Tu B, Chen T, Liu B, Yang K, Koh C W, Zhang X, Sun H, Chen G, Feng X, Woo H Y, Djurišic´ A B, He Z, Guo X 2019 Adv. Mater. 31 1902781Google Scholar

    [9]

    Quan L N, García de Arquer F P, Sabatini R P, Sargent E H 2018 Adv. Mater. 30 1801996Google Scholar

    [10]

    Cao Y, Wang N, Tian H, Guo J, Wei Y, Chen H, Miao Y, Zou W, Pan K, He Y, Cao H, Ke Y, Xu M, Wang Y, Yang M, Du K, Fu Z, Kong D, Dai D, Jin Y, Li G, Li H, Peng Q, Wang J, Huang W 2018 Nature 562 249Google Scholar

    [11]

    Zhang Q, Su R, Liu X, Xing J, Sum T C, Xiong Q 2016 Adv. Funct. Mater. 26 6238Google Scholar

    [12]

    Wang K, Wang S, Xiao S, Song Q 2018 Adv. Optical Mater. 6 1800278Google Scholar

    [13]

    Li D, Cheng H, Wang Y, Zhao Z, Wang G, Wu H, He Q, Huang Y, Duan X 2017 Adv. Mater. 29 1601959Google Scholar

    [14]

    Yu W, Li F, Yu L, Niazi M R, Zou Y, Corzo D, Basu A, Ma C, Dey S, Tietze M L, Buttner U, Wang X, Wang Z, Hedhili M N, Guo C, Wu T, Amassian A 2018 Nat. Commun. 9 5354Google Scholar

    [15]

    Tian W, Zhou H, Li L 2017 Small 13 1702107Google Scholar

    [16]

    Pan W, Wei H, Yang B 2020 Front. Chem. 8 268Google Scholar

    [17]

    Andričević P, Frajtag P, Lamirand V P, Pautz A, Kollár M, Náfrádi B, Sienkiewicz A, Garma T, Forró L, Horváth E 2021 Adv. Sci. 8 2001882Google Scholar

    [18]

    Ma L, Yan Z, Zhou X, Pi Y, Du Y, Huang J, Wang K, Wu K, Zhuang C, Han X 2021 Nat. Commun. 12 2023Google Scholar

    [19]

    Shen H, Nan R, Jian Z, Li X 2019 J. Mater. Sci. 54 11596Google Scholar

    [20]

    Wang W, Meng H, Qi H, Xu H, Du W, Yang Y, Yi Y, Jing S, Xu S, Hong F, Qin J, Huang J, Xu Z, Zhu Y, Xu R, Lai J, Xu F, Wang L, Zhu J 2020 Adv. Mater. 32 2001540Google Scholar

    [21]

    Ryu S, Noh J H, Jeon N J, Kim Y C, Yang W S, Seoa J, Seok S I 2014 Energy Environ. Sci. 7 2614Google Scholar

    [22]

    Cheng X, Jing L, Zhao Y, Du S, Ding J, Zhou T 2018 J. Mater. Chem. C 6 1579Google Scholar

    [23]

    Zheng E, Yuh B, Tosado G A, Yu Q 2017 J. Mater. Chem. C 5 3796Google Scholar

    [24]

    Liu Y, Yang Z, Cui D, Ren X, Sun J, Liu X, Zhang J, Wei Q, Fan H, Yu F, Zhang X, Zhao C, Liu S 2015 Adv. Mater. 27 5176Google Scholar

    [25]

    Ding J, Cheng X, Jing L, Zhou T, Zhao Y, Du S 2018 ACS Appl. Mater. Interfaces 10 845Google Scholar

    [26]

    Mosconi E, Amat A, Nazeeruddin M K, Grätzel M, Angelis F D 2013 J. Phys. Chem. C 117 13902Google Scholar

    [27]

    Zhang F, Zhong H, Chen C, Wu X, Hu X, Huang H, Han J, Zou B, Dong Y 2015 ACS Nano 9 4533Google Scholar

    [28]

    Bernasconi A, Page K, Dai Z, Tan L Z, Rappe A M, Malavasi L 2018 J. Phys. Chem. C 122 28265Google Scholar

    [29]

    Songvilay M, Wang Z, Sakai V G, Guidi T, Bari M, Ye Z G, Xu G, Brown K L, Gehring P M, Stock C 2019 Phys. Rev. Mater. 3 125406Google Scholar

    [30]

    Ivanovska T, Quarti C, Grancini G, Petrozza A, Angelis F D, Milani A, Ruani G 2016 Chem. Sus. Chem 9 2994Google Scholar

    [31]

    Wang H, Nan R, Jian Z, Jin C, Wei Y, Bai Y, Li H 2021 Mater. Sci. Semicond. Process. 135 106107Google Scholar

    [32]

    Singleton J, Rabe K M 2002 Phys. Today 55 61Google Scholar

  • [1] 张桥, 谭薇, 宁勇祺, 聂国政, 蔡孟秋, 王俊年, 朱慧平, 赵宇清. 基于机器学习和第一性原理计算的Janus材料的预测.  , 2024, 73(23): 230201. doi: 10.7498/aps.73.20241278
    [2] 肖志峰, 王守宇, 戴雅婷, 康新淼, 张振华, 刘卫芳. Ge掺杂增强Ruddlesden-Popper结构准二维Sr3Sn2O7陶瓷杂化非本征铁电性的物理机制.  , 2024, 73(14): 147702. doi: 10.7498/aps.73.20240583
    [3] 严志, 方诚, 王芳, 许小红. 过渡金属元素掺杂对SmCo3合金结构和磁性能影响的第一性原理计算.  , 2024, 73(3): 037502. doi: 10.7498/aps.73.20231436
    [4] 吕程烨, 陈英炜, 谢牧廷, 李雪阳, 于宏宇, 钟阳, 向红军. 外加电磁场下周期性体系的第一性原理计算方法.  , 2023, 72(23): 237102. doi: 10.7498/aps.72.20231313
    [5] 杨海林, 陈琦丽, 顾星, 林宁. 氧原子在氟化石墨烯上扩散的第一性原理计算.  , 2023, 72(1): 016801. doi: 10.7498/aps.72.20221630
    [6] 丁莉洁, 张笑天, 郭欣宜, 薛阳, 林常青, 黄丹. SrSnO3作为透明导电氧化物的第一性原理研究.  , 2023, 72(1): 013101. doi: 10.7498/aps.72.20221544
    [7] 陈光平, 杨金妮, 乔昌兵, 黄陆君, 虞静. Er3+掺杂TiO2的局域结构及电子性质的第一性原理研究.  , 2022, 71(24): 246102. doi: 10.7498/aps.71.20221847
    [8] 王奇, 唐法威, 侯超, 吕皓, 宋晓艳. W-In体系溶质晶界偏聚行为的第一性原理计算.  , 2019, 68(7): 077101. doi: 10.7498/aps.68.20190056
    [9] 王艳, 曹仟慧, 胡翠娥, 曾召益. Ce-La-Th合金高压相变的第一性原理计算.  , 2019, 68(8): 086401. doi: 10.7498/aps.68.20182128
    [10] 胡前库, 侯一鸣, 吴庆华, 秦双红, 王李波, 周爱国. 过渡金属硼碳化物TM3B3C和TM4B3C2稳定性和性能的理论计算.  , 2019, 68(9): 096201. doi: 10.7498/aps.68.20190158
    [11] 郑路敏, 钟淑英, 徐波, 欧阳楚英. 锂离子电池正极材料Li2MnO3稀土掺杂的第一性原理研究.  , 2019, 68(13): 138201. doi: 10.7498/aps.68.20190509
    [12] 陈美娜, 张蕾, 高慧颖, 宣言, 任俊峰, 林子敬. Sm3+,Sr2+共掺杂对CeO2基电解质性能影响的密度泛函理论+U计算.  , 2018, 67(8): 088202. doi: 10.7498/aps.67.20172748
    [13] 叶红军, 王大威, 姜志军, 成晟, 魏晓勇. 钙钛矿结构SnTiO3铁电相变的第一性原理研究.  , 2016, 65(23): 237101. doi: 10.7498/aps.65.237101
    [14] 张召富, 周铁戈, 左旭. 氧、硫掺杂六方氮化硼单层的第一性原理计算.  , 2013, 62(8): 083102. doi: 10.7498/aps.62.083102
    [15] 谭兴毅, 金克新, 陈长乐, 周超超. YFe2B2电子结构的第一性原理计算.  , 2010, 59(5): 3414-3417. doi: 10.7498/aps.59.3414
    [16] 丁航晨, 施思齐, 姜平, 唐为华. BiFeO3 结构性质与相转变的第一性原理研究.  , 2010, 59(12): 8789-8793. doi: 10.7498/aps.59.8789
    [17] 张晖, 刘拥军, 潘丽华, 张瑜. Co掺杂BiFeO3的第一性原理研究.  , 2009, 58(10): 7141-7146. doi: 10.7498/aps.58.7141
    [18] 吴红丽, 赵新青, 宫声凯. Nb掺杂对TiO2/NiTi界面电子结构影响的第一性原理计算.  , 2008, 57(12): 7794-7799. doi: 10.7498/aps.57.7794
    [19] 刘利花, 张 颖, 吕广宏, 邓胜华, 王天民. Sr偏析Al晶界结构的第一性原理计算.  , 2008, 57(7): 4428-4433. doi: 10.7498/aps.57.4428
    [20] 明 星, 范厚刚, 胡 方, 王春忠, 孟 醒, 黄祖飞, 陈 岗. 自旋-Peierls化合物GeCuO3电子结构的第一性原理研究.  , 2008, 57(4): 2368-2373. doi: 10.7498/aps.57.2368
计量
  • 文章访问数:  3320
  • PDF下载量:  142
  • 被引次数: 0
出版历程
  • 收稿日期:  2023-01-19
  • 修回日期:  2023-04-28
  • 上网日期:  2023-05-04
  • 刊出日期:  2023-07-05

/

返回文章
返回
Baidu
map