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Traditionally, a diamond anvil cell (DAC) operated at low temperature can be pressurized by using a helium-driven piston or remote control tightening mechanism. This approach of pressurizing DAC is not convenient for operating at low temperature. Here we develop a low-temperature pressurizing technique for in situ tuning pressure in DAC at 20 K by an electrically driven method. The improved DAC pressure apparatus is composed of traditional DAC device and a piezoelectric actuator (PZT). Here the PZT used in the experiment is the PSt 150/1010/40 supplied by the Piezomechanik. Both parts are assembled together in a red copper or stainless steel cylinder. The DAC part is thermally contacted with a low temperature holder for cooling the chamber of the DAC in the experiment. The wires of the PZT connect with the voltage source through the wiring terminals of the cryostat. As the DAC apparatus cools down, two electrodes of the PZT are connected together when a voltage difference between the electrodes is generated. When the temperature of the DAC chamber arrives at the presetting value, two electrodes of the PZT are connected with the voltage source for applying voltage to the PZT. In this paper, we find that the PZT stroke shows a linear increase with increasing voltage at 300 K, whereas it is approximately linear at 80 and 6 K. The maximum strokes are 40, 26 and 15 upm at 300, 80 and 6 K respectively when the applied voltage is 120 V. The experimental results show that the PZT-driven DAC apparatus can continuously generate pressure from 0.49 to 4.41 GPa at low temperature and applied voltage of 0-290 V, where at zero voltage an initial pressure of 0.49 GPa is generated by using driven screws of the DAC device at room temperature. The pressure in the DAC chamber is determined by the red shift of ruby florescence line. The calibrated chamber temperature in DAC is determined as a function of pressure (PZT voltage) by using the intensity ration (R2/R1) of ruby R2 and R1 fluorescence lines. We find that the chamber temperature only slightly increases with increasing pressure in a range of (19 1) K. The main difference between the present device and the other tuning DAC apparatus is that the force on the DAC can be conveniently applied by using PZT voltage. This guarantees a high pressure-tuned resolution in the experiment, e. g., we tune a single InAs quantum dot (QD) emission wavelength to match the cavity mode. Such a tuning technique is found to have applications in realizing a compact tunable single photon source or completing two-photon interference of Hong-Ou-Mandel experiments between the QD and nitrogen vacancy center in diamond or atom, respectively.
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Keywords:
- diamond anvil cell /
- piezoelectric actuator /
- pressure tuning /
- low temperature
[1] Bridgman P W 1935 Proc. Am. Acad. Arts Sci. 70 285
[2] Bridgman P W 1938 Proc. Am. Acad. Arts Sci. 72 200
[3] Lawson A W, Tang T Y 1950 Rev. Sci. Instrum. 21 815
[4] Jamieson J C, Lawson A W, Nachtrieb N D 1959 Rev. Sci. Instrum. 30 1016
[5] Weir C E, Lippincott E R, Van Valkenburg A, Bunting E N 1959 J. Res. Natl. Bur. Stand. A 63 55
[6] Weir C E, Block S, Piermarini G J 1965 J. Res. Natl. Bur. Stand. C 69 275
[7] Piermarini G J, Weir C E 1962 J. Res. Natl. Bur. Stand. A 66 325
[8] Wan Walkenburg A 1964 Diamond Research 17
[9] Barnett J D, Block S, Piermarini G J 1973 Rev. Sci. Instrum. 44 1
[10] Piermarini G J, Block S, Barnett J D 1973 J. Appl. Phys. 44 5377
[11] Besson J M, Pincaeaux J P 1979 Science 206 1073
[12] Mao H K, Bell P M 1978 Carnegie Institute Washington Year Book p659
[13] Moss W C, Hallquist J O, Reichlin R, Goettel K A, Martin S 1986 Appl. Phys. Lett. 48 1258
[14] Jayaraman A 1983 Rev. Mod. Phys. 55 65
[15] Erements M 1996 High Pressure Experimental Methods (Oxford: Oxford University press) p 205
[16] Wu B Q, Wang W K, Jin C Q, Liu W, Li F H, Liu S C, Liu Z X, Zhao Z X, Yao Y S 1992 Acta Phys. Sin. 41 1993 (in Chinese) [吴冰青, 王文魁, 靳常青, 刘维, 李方华, 刘世超, 刘振兴, 赵忠贤, 姚玉书 1992 41 1993]
[17] Wu W, Cheng J G, Matsubayashi K, Kong P P, Lin F K, Jin C Q, Wang N L, Uwatoko Y, Luo J L 2014 Nature Comm. 5 5508
[18] Ma B S, Wang X D, Su F H, Fang Z L, Ding K, Niu Z C, Li G H 2004 J. Appl. Phys. 95 933
[19] Suski T, Paul W 1998 High Pressure in Semiconductor Physics I (Pittsburgh: Academic Press) p248
[20] Piermarini G J, Block S, Barnett J D, Forman R A 1975 J. Appl. Phys. 46 2774
[21] Mao H K, Bell P M 1978 Science 200 1145
[22] Zhou P Y, Wu X F, Ding K, Dou X M, Zha G W, Ni H Q, Niu Z C, Zhu H J, Jiang D S, Zhao C L, Sun B Q 2015 J. Appl. Phys. 117 014304
[23] Wu X F, Dou X M, Ding K, Zhou P Y, Ni H Q, Niu Z C, Jiang D S, Sun B Q 2013 Appl. Phys. Lett. 103 252108
[24] Wu X F, Wei H, Dou X M, Ding K, Ni H Q, Niu Z C, Ji Y, Li S S, Jiang D S, Guo G C, He L X, Sun B Q 2014 Europhys. Lett. 107 27008
[25] Goi A R, Syassen K, Cardona M 1990 Phys. Rev. B 41 10104
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[1] Bridgman P W 1935 Proc. Am. Acad. Arts Sci. 70 285
[2] Bridgman P W 1938 Proc. Am. Acad. Arts Sci. 72 200
[3] Lawson A W, Tang T Y 1950 Rev. Sci. Instrum. 21 815
[4] Jamieson J C, Lawson A W, Nachtrieb N D 1959 Rev. Sci. Instrum. 30 1016
[5] Weir C E, Lippincott E R, Van Valkenburg A, Bunting E N 1959 J. Res. Natl. Bur. Stand. A 63 55
[6] Weir C E, Block S, Piermarini G J 1965 J. Res. Natl. Bur. Stand. C 69 275
[7] Piermarini G J, Weir C E 1962 J. Res. Natl. Bur. Stand. A 66 325
[8] Wan Walkenburg A 1964 Diamond Research 17
[9] Barnett J D, Block S, Piermarini G J 1973 Rev. Sci. Instrum. 44 1
[10] Piermarini G J, Block S, Barnett J D 1973 J. Appl. Phys. 44 5377
[11] Besson J M, Pincaeaux J P 1979 Science 206 1073
[12] Mao H K, Bell P M 1978 Carnegie Institute Washington Year Book p659
[13] Moss W C, Hallquist J O, Reichlin R, Goettel K A, Martin S 1986 Appl. Phys. Lett. 48 1258
[14] Jayaraman A 1983 Rev. Mod. Phys. 55 65
[15] Erements M 1996 High Pressure Experimental Methods (Oxford: Oxford University press) p 205
[16] Wu B Q, Wang W K, Jin C Q, Liu W, Li F H, Liu S C, Liu Z X, Zhao Z X, Yao Y S 1992 Acta Phys. Sin. 41 1993 (in Chinese) [吴冰青, 王文魁, 靳常青, 刘维, 李方华, 刘世超, 刘振兴, 赵忠贤, 姚玉书 1992 41 1993]
[17] Wu W, Cheng J G, Matsubayashi K, Kong P P, Lin F K, Jin C Q, Wang N L, Uwatoko Y, Luo J L 2014 Nature Comm. 5 5508
[18] Ma B S, Wang X D, Su F H, Fang Z L, Ding K, Niu Z C, Li G H 2004 J. Appl. Phys. 95 933
[19] Suski T, Paul W 1998 High Pressure in Semiconductor Physics I (Pittsburgh: Academic Press) p248
[20] Piermarini G J, Block S, Barnett J D, Forman R A 1975 J. Appl. Phys. 46 2774
[21] Mao H K, Bell P M 1978 Science 200 1145
[22] Zhou P Y, Wu X F, Ding K, Dou X M, Zha G W, Ni H Q, Niu Z C, Zhu H J, Jiang D S, Zhao C L, Sun B Q 2015 J. Appl. Phys. 117 014304
[23] Wu X F, Dou X M, Ding K, Zhou P Y, Ni H Q, Niu Z C, Jiang D S, Sun B Q 2013 Appl. Phys. Lett. 103 252108
[24] Wu X F, Wei H, Dou X M, Ding K, Ni H Q, Niu Z C, Ji Y, Li S S, Jiang D S, Guo G C, He L X, Sun B Q 2014 Europhys. Lett. 107 27008
[25] Goi A R, Syassen K, Cardona M 1990 Phys. Rev. B 41 10104
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