Search

Article

x

Highlights

Topics
Article Type

COVER ARTICLE

  

COVER ARTICLE

Deformation mechanisms and compressive response of NbTaTiZr alloy via machine learning potentials
LIU Hongyang, CHEN Bo, CHEN Rong, KANG Dongdong, DAI Jiayu
2025, 74 (19): 196102. doi: 10.7498/aps.74.20250738
Abstract +
Refractory multi-principal element alloys (RMPEAs)have become a hotspot in materials science research in recent years due to their excellent high-temperature mechanical properties and broad application prospects. However, the unique deformation mechanisms and mechanical behaviors of the NbTaTiZr quaternary RMPEA under extreme conditions such as high temperature and high strain rate are still unclear, limiting its further design and engineering applications. In order to reveal in depth the dynamic response of this alloy on an atomic scale, this study develops a high-accuracy machine learning potential (MLP) for the NbTaTiZr quaternary alloy and combines it with large-scale molecular dynamics (MD) simulations to systematically investigate the effects of crystallographic orientation, strain rate, temperature, and chemical composition on the mechanical properties and microstructural evolution mechanisms of the alloy under compressive loading. The results show that the NbTaTiZr alloy exhibits significant mechanical and structural anisotropy during uniaxial compression. The alloy exhibits the highest yield strength when loaded along the [111] crystallographic direction, while it shows the lowest yield strength when compressed along the [110] direction, where twinning is more likely to occur. Under compression along the [100] direction, the primary deformation mechanisms include local disordering transitions and dislocation slip, with 1/2$ \left\langle{111}\right\rangle $ dislocations being the dominant type. When the strain rate increases to 1010 s–1, the yield strength of the alloy is significantly enhanced, accompanied by a notable increase in the proportion of amorphous or disordered structures, indicating that high strain rate loading suppresses dislocation nucleation and motion while promoting disordering transitions. Simulations at varying temperatures indicate that the alloy maintains a high strength level even at temperatures as high as 2100 K. Compositional analysis further indicates that increasing the atomic percentage of Nb or Ta effectively enhances the yield strength of the alloy, whereas an increase in Ti or Zr content adversely affects the strength. By combining MLP with MD methods, this study elucidates the anisotropic characteristics of the mechanical behavior and the strain rate dependence of disordering transitions in the NbTaTiZr RMPEA under combination of high strain rate and high temperature, providing an important theoretical basis and simulation foundation for optimizing and designing novel material under extreme environments.

SPECIAL TOPIC—Order tuning in disordered alloys

  

EDITOR'S SUGGESTION

Fragile-to-strong transition of FeZrB-based metallic glass and its influence on glass-forming ability
WANG Jianfeng, SHI Luxin, FEI Ting, BAI Yanwen, HU Lina
2025, 74 (19): 196402. doi: 10.7498/aps.74.20250889
Abstract +
Glass-forming liquids exhibit unique dynamic transition behavior during temperature changes. The system undergoes a transition from the fragile liquid to the strong liquid, which is known as the fragile-to-strong transition as the temperature decreases. In order to address the issue of poor glass-forming ability (GFA) in Fe-based alloys, through studying the kinetic behavior of the Fe-Zr-B-M (M = Nb, Ti, Al) alloy system, the mechanism of ductile-brittle transition is revealed and the relationship between the degree of ductile-brittle transition and the GFA is established. In this study, through viscosity measurements, a pronounced fragile-to-strong transition behavior in this system is revealed. By using crystallization activation energy as an evaluation criterion, a negative correlation between the degree of the fragile-to-strong transition and the GFA in the Fe-Zr-B-M system is established. The results indicate that the crystal-like clusters play a critical role in the solidification process of the Fe-Zr-B-M metallic glasses. Based on this, a fragile-to-strong transition mechanism involving the structural transformation from the icosahedral clusters to the crystal-like clusters is proposed. Through theoretical calculations of mixing enthalpy and mismatch entropy and by combining microstructural characterization, it is found that alloy compositions with more negative mixing enthalpy and higher mismatch entropy can effectively suppress the tendency of icosahedral structures to transform into crystal-like structures, thereby hindering crystallization and promoting the formation of a more disordered amorphous structure. This structural feature not only corresponds to superior glass-forming ability but also exhibits a weak fragile-to-strong transition phenomenon. In this work, the intrinsic correlation between viscosity characteristics and the GFA is revealed, providing a theoretical basis for developing Fe-based metallic glasses with high GFA.

SPECIAL TOPIC—Quantum information processing

  

EDITOR'S SUGGESTION

Quantum non-deterministic noiseless linear amplification
CUI Shihe, DU Mingming, LI Xiyun, ZHOU Lan, SHENG Yubo
2025, 74 (19): 190302. doi: 10.7498/aps.74.20250865
Abstract +
Quantum communication can realize secure information transmission based on the fundamental principles of quantum mechanics. Photon is a crucial information carrier in quantum communication. The photonic quantum communication protocols require the transmission of photons or photonic entanglement between communicating parties. However, in this process, photon transmission loss inevitably occurs due to environmental noise. Photon transmission loss significantly reduces the efficiency of quantum communication and even threatens its security, so that it becomes a major obstacle for practical long-distance quantum communication. Quantum noiseless linear amplification (NLA) is a promising method for mitigating photon transmission loss. Through local operations and post-selection, NLA can effectively increase the fidelity of the target state or the average photon number in the output state while perfectly preserving the encoded information of the target state. As a result, employing NLA technology can effectively overcome photon transmission loss and extend the secure communication distance.In this paper, the existing NLA protocols are categorized into two types, i.e. the NLA protocols in DV quantum systems and CV quantum systems. A detailed introduction is given to the quantum scissor (QS)-based NLA protocols for single photons, single-photon polarization qubits, and single-photon spatial entanglement in the DV quantum systems. The QS-based NLA can effectively increase the fidelity of the target states while perfectly preserving its encodings. In recent years, researchers have made efforts to study various improvements to the QS-based NLA protocols. In the CV quantum systems, researchers have adopted parallel multiple QS structure and generalized QS to increase the average photon numbers of the Fock states, coherent states and two-mode squeezed vacuum states. In addition to theoretical advancements, significant progress has also been made in the experimental implementations of NLA. The representative experimental demonstrations of QS-based NLA protocols are summarized.Finally, the future development directions for NLA to facilitate its practical applications are presented. This review can provide theoretical support for practically developing NLA in the future.

SPECIAL TOPIC—Order tuning in disordered alloys

  

EDITOR'S SUGGESTION

Shear banding behavior in soft-hard phase ordered metallic glasses
WANG Shoucheng, PAN Qiangqiang, NING Rui, PENG Hailong
2025, 74 (19): 196101. doi: 10.7498/aps.74.20250845
Abstract +
Shear banding behavior of metallic glasses (MGs) strongly correlates with the microstructural heterogeneity. Understanding how the nucleation and propagation of shear bands are governed by the nanoscale structural heterogeneity is crucial for designing high-performance MGs. Herein, the traditional molecular dynamics (MD) and swap Monte Carlo (SMC) simulations are used to construct two phases of CuZr metallic glasses: the soft phase with a high cooling rate about 1013 K/s, and the hard phase with a extremely low cooling rate in simulations about 104 K/s. The soft phase contains fewer icosahedral clusters, allowing for easier plastic deformation; the hard phase has more of icosahedral clusters, which promotes shear localization once shear bands form inside. A ductile-to-brittle transition is found to occur in the soft-and-hard phase ordered MGs with the increase of the hard-region fraction c. Additionally, the strategy for ordering these two phases to strongly influence the mechanical behavior of MGs is proposed. Dispersed and isolated hard-regions can improve the mechanical stability of MGs and delay the occurrence of shear banding. Instead, the soft regions surrounded by hard regions can induce a secondary shear band that is formed through the reorientation of plastic zones under constrained deformation, leading to more delocalized plastic deformation zones. This work reveals that the structural heterogeneity achieved by adjusting the topology of soft and hard phases can significantly change the mechanical performance of MGs, which can guide the design of metallic glasses with controllable structures through architectural ordering strategies.

EDITOR'S SUGGESTION

Nonlinear Hall effect in semi-magnetic topological insulators
WU Ke, ZHU Jiongyi, CHEN Rui, ZHOU Bin
2025, 74 (19): 197302. doi: 10.7498/aps.74.20250814
Abstract +
Semi-magnetic topological insulators have received wide attention because of their unique electrical properties, including the emergent half-quantized linear Hall effect. However, nonlinear Hall effects in these materials have not been studied. In this work, the nonlinear Hall effect in semi-magnetic topological insulators is investigated, and its dependence on the orientation of the magnetic moment in the magnetic layer is explored. By using both analytical method and numerical method, it is demonstrated that the nonlinear Hall conductance is more sensitive to the horizontal component of the magnetic moment than the linear Hall conductance, which predominantly depends on the vertical component of the magnetic moment. Our results reveal that the nonlinear Hall conductance can serve as a sensitive probe to detect changes in the orientation of the magnetic moment in experiments. Specifically, it is shown that the nonlinear Hall effect is governed by the Berry dipole moment, whose magnitude and direction vary with the tilt of the magnetic moment, thereby offering a unique signature of its orientation. The potential for using both linear and nonlinear Hall effects to map the direction of the magnetic moment in semi-magnetic topological insulators is highlighted in this work. Besides, the measurement of the nonlinear Hall effect can be directly implemented using existing experimental setups, without the need for additional modifications. The findings offer insights into the quantum transport behavior of the semi-magnetic topological insulator and pave the way for new experimental techniques to manipulate and probe their magnetic properties.

EDITOR'S SUGGESTION

Evaluation of neutron energy spectrum, fluence and single event effects of atmospheric neutron irradiation spectrometer at China spallation neutron source
HU Zhiliang, MO Lihua, ZHOU Bin, YI Tiancheng, LI Mengchao, ZHAO Qi, LIANG Tianjiao
2025, 74 (19): 192901. doi: 10.7498/aps.74.20250975
Abstract +
The neutron energy spectrum and fluence of the atmospheric neutron irradiation spectrometer at China Spallation Neutron Source cover the energy range from meV to GeV. The evaluation of the neutron energy spectrum and fluence in an energy region above 1 MeV is of great significance for studying single event effect of atmospheric neutrons. Due to the limitations of the proton beam time structure of the CSNS and the engineering reality of the ANIS, it is impossible to achieve the neutron energy spectrum and fluence above 1 MeV through absolute measurements. Therefore, it is necessary to adopt a combination of theoretical simulations and partial experiments to provide reference values. This work covers the following aspects. 1) Based on the measured neutron energy spectrum data from the ICE beamline at LANSCE WNR, the physical models, tally types, and cross-section data files suitable for the calculation of high energy neutron energy spectra and fluence are explored using MCNPX2.5.0; 2) A secondary source with energy distribution, angular distribution, and spatial distribution for neutron energy spectrum and fluence evaluation is developed and verified. 3) Using the obtained neutron energy spectrum and fluence and the combination of existing facilities and JSED89A reference neutron energy spectrum, the performance of the ANIS facility is evaluated from the perspectives of spectrum shape and radiation effect. 4) An experiment on neutron induced single-event upset cross-section measurement of configuration memory on Xilinx 2nd generation FPGAs is conducted using the ANIS. The results are consistent with test results of the same chip series on similar international facilities.In summary, it can be concluded that the ANIS at CSNS may be the facility with the neutron energy spectrum closest to the natural atmospheric neutron energy spectrum among similar facilities in the world, and it has also been confirmed that the test results of ANIS from CSNS show excellent consistency with results obtained from other facilities. Therefore, the research results on atmospheric neutron single-particle effects and engineering acceleration tests based on ANIS at CSNS can be directly applied to high-reliability fields such as aviation, aerospace, military, and civil, contributing to the development of new quality productive forces.

EDITOR'S SUGGESTION

Fabrication and characterization of pulsed laser deposited high-tunability, low-loss Ba0.6Sr0.4TiO3 thin films
YU Chenxi, JIANG Haolin, XIAO Zhifeng, BAO Xiaoqing, WANG Dan, DENG Gongxun, WANG Aiji
2025, 74 (19): 197702. doi: 10.7498/aps.74.20250938
Abstract +
Microwave tunable devices are critical components in phased array antennas and RF front-ends, and essential for the precise controling of frequency, phase and amplitude. Although bulk dielectric ceramic materials are widely used in these devices, they pose challenges for integration. In contrast, dielectric thin films offer significant advantages, including easy integration, low cost, high tuning speed, low power consumption, compact size, and continuous tunability, making them more compatible with modern integrated circuit fabrication processes. Currently, a key prerequisite for designing devices based on dielectric thin films is the use of low-permittivity, low-loss substrates to mitigate their influence on the overall dielectric performance, while enhancing the crystalline quality of the films themselves. However, suitable substrates for epitaxial growth, such as MgO and Si, exhibit a significant lattice mismatch (>5%) with dielectric thin films. This poses a substantial challenge to achieving high-quality epitaxial growth, making it difficult to obtain dielectric thin films with both high tunability and low loss.To address this challenge, pulsed laser deposition (PLD) is used to provide high-energy, non-equilibrium growth conditions. By precisely controlling parameters such as substrate temperature and growth oxygen pressure, a suitable growth window that induce domain matching epitaxy (DME) mechanism can be determined, effectively adapting to mismatched strain, and thus successfully preparing high-performance Ba0.6Sr0.4TiO3 (BSTO) epitaxial thin films on MgO(001) substrates.To investigate the effect of substrate temperature on the properties of the BSTO thin films, a series of films is prepared on MgO(001) substrates at temperatures of 680 ℃, 700 ℃, 730 ℃, 760 ℃ and 780 ℃, while other growth conditions are kept constant. The study reveals that as the substrate temperature increases, the crystallinity, tunability, and figure of merit (FOM) of the films are significantly improved. The film grown at 780 ℃ shows a high tunability value of 67.2%, a quality (Q) factor of 49, and an FOM of 32.93. Compared with previously reported films, the Ba0.6Sr0.4TiO3 thin films prepared in this work demonstrate superior dielectric tunability and lower dielectric loss.To explore the thermal stability of the Ba0.6Sr0.4TiO3 thin film, its performance is characterized using Raman spectroscopy and Capacitance-Voltage measurements in a temperature range from 25 ℃ to 225 ℃. Raman spectra indicate that the lattice vibrational modes of the Ba0.6Sr0.4TiO3 film change with the increase of temperature. When temperature is in a range between 175 ℃ and 225 ℃, the film will completely transform from the tetragonal phase to the Raman-inactive cubic phase. At the same time, the nonlinear “butterfly” characteristic of the C-V curves vanishes due to the disappearance of ferroelectric domains. The dielectric constant and tunability reach their maximum values at approximately 60 ℃, then decrease, whereas the Q-factor reaches its peak at around 205 ℃. The motion of domain walls in films is constrained not only by internal stress fields and defects but also by strong pinning effects at the film-substrate interface and the free surface of the film.This research systematically analyzes the influences of surface morphology, crystal structure, and temperature on the dielectric properties of Ba0.6Sr0.4TiO3 epitaxial thin films. It lays a foundation for elucidating the broadband structure-property relationships of Ba1–xSrxTiO3 thin films and highlights their significant potential applications in tunable microwave devices.

EDITOR'S SUGGESTION

Regulation of ultrafast photoisomerization dynamics of 1122C by femtosecond pump-dump-probe transient absorption spectroscopy
XU Huilin, HUANG Cheng, WEI Zhengrong
2025, 74 (19): 194204. doi: 10.7498/aps.74.20250909
Abstract +
Photoisomerization is a prototypical photophysical and photochemical reaction, and the reaction quantum yield depends on its excited-state dynamic. Changing the evolution path of molecular excited states to achieve precise control over photochemical reactions has long been a dream pursued by physicists and chemists. To investigate the effect of femtosecond laser pulse on the ultrafast reaction, the ultrafast photoisomerization of 1, 1'-diethyl-2, 2'-cyanine iodide (1122C) in methanol is studied using pump-dump-probe spectroscopy. A third femtosecond pulse (Dump) at 1030 nm, which is delayed by 1 ps relative to the initial pump pulse, is introduced into the traditional pump-probe experiment. The recovery of ground state bleaching (GSB) and decrease of the cis product are observed in the pump-dump-probe experiment. It indicates that the dump pulse successfully promotes the initial transform: skipping the trans-cis isomerization pathway in the excited state and returning to the ground state directly through stimulated emission. It is found that the cis yield is reduced by approximately 12.1% under irradiation of the dump pulse. Our research shows that the quantum yields of a typic ultrafast photoisomerization reaction is successfully regulated by using femtosecond laser pulse, demonstrating the potential of femtosecond multi-pulse spectroscopy in modifying excited-state evolution pathways and optimizing photochemical reaction yields. This study provides theoretical and technical support for precisely controlling complex photochemical reactions in the future.

SPECIAL TOPIC—Thematic Data in Nuclear Physics: Experimental, Theoretical and Applied Research

  

EDITOR'S SUGGESTION

Decay data of radionuclide 56Co for high-energy gamma efficiency calibration of detectors
TIAN Ronghe, YANG Dong, YU Weixiang, HUANG Xiaolong, LI Xiaoan, SHI Mingsong
2025, 74 (19): 190601. doi: 10.7498/aps.74.20250743
Abstract +
56Co, with γ-ray energies covering the ranging from 0.84–3.55 MeV, is an important radionuclide for calibrating Ge detector. Based on the main measurements of D. C. Camp et al. (Camp D C, Meredith G L 1971 Nucl. Phys. A 166 349) and M. E. Phelps et al (Phelps M, Sarantites D, Winn W 1970 Nucl. Phys. A 149 647). before 2000, the probability of γ-ray emission is evaluated and recommended. The values reported by D. C. Camp, however, are systematically lower in high energy range. In this work, using the experimental measurements obtained from the Nuclear Science Reference Library, the main decay data, such as half-life and γ-ray emission probabilities, are evaluated and summarized. In the Eγ < 2.5 MeV energy region, the new evaluation data in this work are in good agreement with the results of the ENSDF evaluation (Huo J, Huo S, Yang D 2011 Nucl. Data Sheets 112 1513) and the summary report published by IAEA in 1991 (Bambynek W, Barta T, Jedlovszky R, Christmas P, Coursol N, Debertin K, Helmer R, Nichols A, Schima F, Yoshizawa Y 1991 report IAEATECDOC-619). However, in the high-energy region, i.e., in the Eγ > 2.5 MeV energy region, the present work gives lower values than the other evaluation data. The deviation at 3.4 MeV is as high as 2.7%. Rationality of the present evaluation and corrected method will be dependent on new measurements, and more precise standard data are desirable. The datasets presented in this paper, including the ENDF and ENSDF format decay data files for 56Co, may be available at https://doi.org/10.57760/sciencedb.j00213.00169.

EDITOR'S SUGGESTION

Structural evolution of siloxane-epoxy crosslinked networks and their high-temperature electrical properties
YIN Kai, LI Jing, TENG Chenyuan, HU Yishuang, CHEN Xiangrong, ZHA Junwei
2025, 74 (19): 197701. doi: 10.7498/aps.74.20250654
Abstract +
The ongoing trend toward high-power and miniaturized electronic devices has raised increasingly stringent requirements for the high-temperature electrical properties of epoxy encapsulating materials. In this study, epoxy-terminated phenyltrisiloxane (ETS) is used as a functional monomer to incorporate Si-O bonds into bisphenol-A epoxy resin through crosslinking reactions, thereby systematically investigating the influence and modulation effects of ETS on the structure and high-temperature electrical characteristics of epoxy composites. Gel content measurements indicate that as the concentration of ETS increases, the gel content of the epoxy resin composite decreases accordingly, suggesting that higher ETS content reduces the crosslinking density of the epoxy network. Experimental test results demonstrate that compared with pure epoxy resin, the composite with 2.5% ETS exhibits superior performance: the glass transition temperature increases to 129 ℃ with thermal decomposition temperature rising, while showing optimal high-temperature (70 ℃) electrical properties including significantly reduced conductivity, markedly suppressed space charge accumulation, deepened trap energy level (from 0.834 eV to 0.847 eV), reduced dielectric loss (0.005 at 50 Hz), and improved breakdown strength (74.2 kV/mm). Notably, as the ETS content increases, the electrical properties of epoxy composite follow a non-monotonic concentration dependence, initially enhancing then deteriorating, exhibiting evolutionary characteristics similar to those of nanoparticle-modified systems. Herein, a competitive mechanism between the epoxy network structure and intrinsic properties of ETS is proposed to explain this phenomenon: at low concentrations, the original C—C network dominates, where the intrinsic properties of ETS are constrained by the host matrix, leading to improved thermal stability. Simultaneously, the bandgap difference between ETS and DGEBA establishes charge barriers that can enhance insulation performance. However, at higher concentrations, the reduced crosslinking density and increased free volume caused by reactivity and structural mismatch between ETS and DGEBA ultimately lead to performance degradation. This study offers crucial theoretical insights into and produces the design strategies for developing high-performance siloxane-modified epoxy encapsulants.
  • 1
  • 2
  • 3
  • 4
  • 5
  • ...
  • 207
  • 208
Baidu
map