二维材料与未来信息器件
2025, 74 (17): 178502.
doi: 10.7498/aps.74.20250703
Abstract +
Artificial visual system (AVS) has received increasing attention for their transformative potential in fields such as medical diagnostics, intelligent robotics, and machine vision. Traditional silicon-based imaging technologies, however, face significant limitations, including high energy consumption, limited dynamic range, and integration challenges. Two-dimensional (2D) semiconductor materials, such as MoS2, WSe2, and black phosphorus have emerged as promising alternatives due to their atomically thin structure, tunable bandgaps, high carrier mobility, and superior optoelectronic properties. In this work, recent breakthroughs in the integration of 2D materials with AVS are investigated. Highlighted is the development of a reconfigurable four-terminal phototransistor array based on WSe2 and IGZO heterostructures, which enables monocular 3D disparity reconstruction without the need for multiple cameras or active light sources. The system demonstrates a dynamic imaging rate exceeding 33 frames per second and supports real-time sensing, memory storage, and ambipolar mode switching with ultralow power consumption (as low as 142 pW). Key innovations include multifunctional device architectures that simulate the retinal photoreceptors, bipolar cells, and even neural synapses, achieving functions such as image sensing, real-time adaptation, color recognition, motion tracking, and multimodal perception. Furthermore, by simulating the human neurovisual pathways, these 2D material-based devices can potentially realize in-sensor computing and neuromorphic processing, which substantially reduce data transfer bottlenecks and energy overhead. Nonetheless, the field is still in its formative stage. Here, several critical bottlenecks are emphasized: the lack of scalable, defect-controlled synthesis of 2D heterostructures; the limited spectral bandwidth and color fidelity of current photonic components; the immature state of neuromorphic elements, which often lacks stability, long-term memory, and bio-realistic plasticity. Moreover, the practical integration with real-world applications requires compatibility with high-density manufacturing and dynamic, multi-modal environments. In the future, artificial vision platforms, empowered by engineered 2D materials and heterostructures, will develop into highly compact, intelligent, and context-aware agents capable of autonomous perception and interaction in complex real-world settings.
2025, 74 (17): 178501.
doi: 10.7498/aps.74.20250648
Abstract +
Two-dimensional (2D) semiconductor materials exhibit tremendous potential for post-Moore integrated circuits due to their unique physical properties and superior electrical characteristics. However, critical challenges in polarity modulation and complementary integration have significantly hindered the practical applications of 2D materials. The development of compatible polarity-modulation techniques has emerged as a critical step in achieving device functional integration for constructing 2D materials-based complementary circuits. This study innovatively proposes a one-step-annealing-driven polarity-modulation strategy for 2D semiconductors. It is demonstrated in this study that the conduction behavior of Pd-contacted WSe2 transistors transitions from n-type to p-type dominance after annealing, while Cr-contacted devices maintain n-type dominance. Based on this polarity-modulation strategy, by selectively fabricating source and drain electrodes with different metal materials (Pd and Cr) on the same WSe2, combined with a one-step annealing process, the monolithic integration of complementary transistors is achieved, thereby realizing inverter function through device interconnection. The fabricated inverters exhibit a high voltage gain of 23 and a total noise margin of 2.3 V(0.92 Vdd) at an applied Vdd of 2.5 V. This work not only establishes a novel technical pathway for polarity modulation in 2D materials but also provides crucial technological support for developing 2D semiconductor-based complementary logic circuits.
