Synergy-based plasmon-induced transparency and optical switch and slow light applications

HU Shunan; LI Deqiong; ZHAN Jie; GAO Enduo; WANG Qi; LIU Nanliu; NIE Guozheng

doi:10.7498/aps.74.20250078

Abstract

Surface plasmons (SPs) are generated by the interaction of conduction electrons on the surface of a metallic medium with photons in light wave, and they have an important phenomenon called plasmon-induced transparency (PIT). The PIT effect is crucial for improving the performance of nano-optical devices by strengthening the interaction between light and matter, thereby enhancing coupling efficiency. As is well known, traditional PIT is mainly achieved through two main ways: either through destructive interference between bright and dark modes, or through weak coupling between two bright modes. Therefore, it is crucial to find a new excitation method to break away from these traditional approaches. In this work, we propose a single-layer graphene metasurface composed of longitudinal graphene bands and three transverse graphene strips, which can excite a tripe-PIT through the synergistic effect between two single-PITs. We then leverage the synergistic effect between these two single-PITs to realize a triple-PIT. This approach breaks away from the traditional method of generating PIT through the coupling of bright and dark modes. The numerical simulation results are also obtained using the finite-difference time-domain, which are highly consistent with the results of the coupled-mode theory, thereby validating the accuracy of the results. In addition, by adjusting the Fermi level and carrier mobility of graphene, the dynamic transition from a five-frequency asynchronous optical switch to a six-frequency asynchronous optical switch is successfully achieved. The six-frequency asynchronous optical switch demonstrates exceptional performance: at frequency points of 3.77 THz and 6.41 THz, the modulation depth and insertion loss reach 99.31% and 0.12 dB, respectively, while at the frequency point of 4.58 THz, the dephasing time and extinction ratio are 3.16 ps and 21.53 dB, respectively. Additionally, when the tuning range is from 2.8 THz to 3.1 THz band, the triple-PIT system exhibits a remarkably high group index of up to 1212. These performance metrics exceed those of most traditional slow-light devices. Based on these results, the structure is expected to provide new theoretical ideas for designing high-performance devices, such as optical switches and slow-light devices.

Keywords:

Authors and contacts

1.
Hunan Provincial Key Laboratory of Intelligent Sensors and New Sensor Materials, School of Physics and Electronic Science, Hunan University of Science and Technology, Xiangtan 411201, China
2.
School of Mathematics and Statistics, Hunan University of Technology and Business, Changsha 410205, China
3.
School of Physical and Electronic Science, Changsha University of Science and Technology, Changsha 410083, China
4.
Dongguan Institute of Opto-Electronics, Peking University, Dongguan 523808, China

Corresponding author: ZHAN Jie, 992007825@qq.com ; NIE Guozheng, gzhnie@hnust.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61905075, 62173135), the Natural Science Foundation of the Education Department of Hunan Province, China (Grant Nos. 23A0454, 22A0433), and the Natural Science Foundation of Hunan Province, China (Grant Nos. 2022JJ30301, 2023JJ30195).

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References

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Cited By

图 1 (a)石墨烯超材料模型结构的全视图; (b)石墨烯结构侧视图; (c)石墨烯结构俯视图, L_x = L_y = 4 μm, m₁ = 2.2 μm, m₂ = 2.3 μm, m₃ = 0.6 μm, s₁ = 0.4 μm, s₂ = 0.25 μm, w₁ = 0.8 μm, w₂ = 0.6 μm; (d)石墨烯结构的制备流程图

Figure 1. (a) Full view of the graphene metamaterial model structure; (b) side view of graphene structure; (c) top view of graphene structure, L_x = L_y = 4 μm, m₁ = 2.2 μm, m₂ = 2.3 μm, m₃ = 0.6 μm, s₁ = 0.4 μm, s₂ = 0.25 μm, w₁ = 0.8 μm, w₂ = 0.6 μm; (d) flow chart for the preparation of graphene structures.

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图 2 耦合模理论示意图

Figure 2. Schematic diagram of coupled mode theory.

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图 3 (a), (b)不同石墨烯阵列的透射光谱; (c)整体结构形成的三重PIT透射谱(E_F = 1 eV, μ = 1.0 m²/(V·s)); (d) Dip 1, Dip 2, Dip 3, Dip 4对应共振频率下的电场分布图

Figure 3. (a), (b) Transmission spectra of the different arrays; (c) triple-PIT transmission spectra formed by the overall structure (E_F = 1 eV, μ = 1.0 m²/(V·s)); (d) plot of the electric field distribution at the corresponding resonance frequencies for Dip 1, Dip 2, Dip 3, and Dip 4.

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图 4 (a)三重PIT对应的透射光谱与石墨烯费米能级的关系; (b)不同费米能级下三维透射谱的演化

Figure 4. (a) Transmission spectra corresponding to the triple PIT versus graphene Fermi energy levels; (b) evolution of 3D transmission at different Fermi energy levels.

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图 5 (a)费米能级处于0.8 eV, 1.2 eV时, 载流子迁移率μ = 1.0 m²/(V·s)情况下五频异步光开关的调制, 其中“ON”表示“打开”, “OFF”表示“关闭”; (b)费米能级处于0.8 eV, 1.2 eV, 迁移率μ = 3.0 m²/(V·s)情况下的六频光开关调制

Figure 5. (a) Modulation of a five-frequency asynchronous optical switch with carrier mobility μ = 1.0 m²/(V·s) at Fermi energy levels of 0.8 eV, 1.2 eV, where “ON” means “open”, “OFF” means “close”; (b) six-frequency asynchronous optical switch modulation with Fermi energy levels at 0.8 eV, 1.2 eV and mobility μ = 3.0 m²/(V·s).

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图 6 (a)透射谱与载流子迁移率之间的关系(E_F = 1.0 eV); (b)不同载流子迁移率下透射谱的演化; (c)不同载流子迁移率下Re(n_eff)的演化

Figure 6. (a) Relationship between transmission spectrum and carrier mobility (E_F = 1.0 eV); (b) the evolution of the transmission spectrum with carrier mobility; (c) the evolution of Re(n_eff) with carrier mobility.

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图 7 (a)—(d)费米能级E_F = 0.9, 1.0, 1.1, 1.2 eV的情况下群折射率和相移随频率的变化(μ = 3.0 m²/(V·s))

Figure 7. (a)–(d) Variation of group refractive index and phase shift with frequency for the Fermi energy levels E_F = 0.9, 1.0, 1.1, 1.2 eV, respectively (μ = 3.0 m²/(V·s)).

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表 1 不同频率下D_M, T_D, L_I, R_E参数

Table 1. D_M, T_D, L_I, R_E parameters at different frequencies.

	μ = 1.0 m²/(V·s)					μ = 3.0 m²/(V·s)
Frequency/THz	D_M/%	L_I/dB	T_D/ps	R_E/dB	Frequency/THz	D_M/%	L_I/dB	T_D/ps	R_E/dB
3.12	85.46	0.14	3.57	8.02	2.56	94.53	0.70	7.12	9.89
3.77	86.01	0.31	4.75	8.12	3.12	95.96	0.29	5.34	13.77
4.58	96.02	0.11	4.08	13.15	3.77	99.31	0.17	4.56	17.26
5.32	84.60	0.18	3.19	7.75	4.58	98.21	0.21	3.16	21.53
6.41	95.12	0.26	3.70	12.03	5.32	98.65	0.18	5.97	18.24
					6.41	96.45	0. 12	3.73	16.11

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表 2 不同图案化石墨烯的性能比较

Table 2. Comparison of the properties of different patterned graphene.

Ref./year	Modulation mode	Material structure	Group index	D_M/%	L_I/dB	T_D/ps	R_E/dB
[57]/2020	Dual-frequency	Single-layer patterned graphene	358	93.0	0.32	—	—
[58]/2020	Multiple-frequency	Single-layer patterned graphene	—	77.7	—	—	12.5
[59]/2021	Multiple-frequency	Single-layer patterned graphene	321	92.0	—	3.2	—
[31]/2022	Multiple-frequency	Single-layer patterned graphene	—	99.9	0.33	0.848	—
[60]/2022	Multiple-frequency	Single-layer patterned graphene	1100	97.1	0.04	—	—
[61]/2023	Multiple-frequency	Single-layer patterned graphene	—	97.7	5.4	3.86	16.41
[62]/2023	Multiple-frequency	Monolayer patterned black phosphorus	219	—	—	0.22	—
[63]/2024	Multiple-frequency	Single-layer patterned graphene	1000	87.5	—	—	—
[30]/2024	Multiple-frequency	Single-layer patterned graphene	781	98.0	0.51	—	—
This work	Multiple-frequency	Single-layer patterned graphene	1212	99.3	0.120	3.16	21.53

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[19]	Wang J Y, Zhao R Q, Yang M M, Liu Z F, Liu Z R 2013 J. Chem. Phys. 138 084701 Google Scholar
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[39]	Li M, Xu H, Yang X J, Xu H Y, Liu P C, He L H, Nie G Z, Dong Y L, Chen Z Q 2023 Results Phys. 52 106798 Google Scholar
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[43]	Yin Y, Alivisatos A P 2005 Nature 437 664 Google Scholar
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[46]	Wu D, Wang M, Feng H, Xu Z X, Liu Y P, Xia F, Zhang K, Kong W J, Dong L F, Yun M J 2019 Carbon 155 618 Google Scholar
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[49]	Cheng H, Chen S Q, Yu P, Duan X Y, Xie B Y, Tian J G 2013 Appl. Phys. Lett. 103 203112 Google Scholar
[50]	Yu S L, Wu X Q, Wang Y P, Guo X, Tong L M 2017 Adv. Mater. 29 1606128.Google Scholar
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[57]	Li M, Li H J, Xu H, Xiong C X, Zhao M Z, Liu C, Ruan B X, Zhang B H, Wu K 2020 New J. Phys. 22 103030 Google Scholar
[58]	Zhang X, Liu Z, Zhang Z B, Gao E D, Luo X, Zhou F Q, Li H J, Zao Y 2020 Opt. Express 28 36771 Google Scholar
[59]	Zhang X, Zhou F Q, Liu Z M, Zhang Z B, Qin Y P, Zhuo S S, Luo X, Gao E D, Li H J 2021 Opt. Express 29 29387 Google Scholar
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Vol. 74, Issue 9 - 2025-05-05

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