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In order to meet the switching requirements of high-frequency pulsed-power systems and further enhance the peak power and turn-on speed of solid-state switches, comparative experiments on the structure of optically controlled multi-gate thyristors and the parameter of injected light are investigated in this work. The research results show that semiconductor chips based on the multi-gate thyristor structure exhibit different conduction characteristics under varying laser injection conditions, resulting in unique inflection point curves. By establishing a switching model and changing the injected light parameters and circuit parameter models, three conceptual operating modes for the optically controlled multi-gate thyristor are proposed, they being photonic linear mode (Mode A), field-induced nonlinear mode (Mode C), and hybrid amplification mode (Mode B). Based on these concepts, the experimental validation tests are conducted, and the three distinct operating characteristics of the optically controlled multi-gate thyristor are confirmed. In Mode A, the conduction process is mainly related to the injected light power parameters, which is similar to the scenario in the linear mode of traditional light-guided switches, thus Mode A is suitable for the narrow pulse width applications. Mode C mainly focuses on carrier multiplication after injection, resembling the conduction characteristics of super thyristors (SGTO), and this mode is suitable for wide pulse width and high current applications. In Mode B, its initial conduction is related to the injected light parameters, while the later carrier multiplication continues from the earlier photonic linear mode, achieving characteristics of both fast rise time and wide pulse width, effectively integrating the advantages of light-guided switches and SGTOs. In Mode A, when injected laser energy is 8.5 mJ, a pulse width is 10 ns, and peak power is 0.85 MW, the switch operates at a voltage of 5.2 kV, an output current of 8.1 kA, turn-on time (10%—90%) of 18.4 ns, with a di/dt value reaching 440 kA/μs. The main characteristic is that the di/dt of the switch is linearly related to the injected laser energy, thereby achieving a fast rise time output, which reflects the photonic linear conduction mode. This mode is suitable for high-power, narrow-pulse, and fast-rise-time applications, such as high-power microwave sources, and its characteristics are similar to those of gas switches. In Mode C, when triggering laser energy is set to 250 μJ, a pulse width is 210 ns, and peak power is 1200 W, the switch operates at a voltage of 8.5 kV, a short-circuit current of 6 kA and a current rise time of 110 ns, achieving a di/dt value exceeding 55 kA/μs. The key characteristic is that the di/dt of the switch is unrelated to the injected laser energy but is related to the electric field applied across the switch, thus it can operates at large current and wide pulse width, which reflects the field-induced nonlinear conduction mode. This mode is suitable for high-power, wide-pulse, and slower-rise-time applications, such as large current detonation and electromagnetic drives, and its characteristics are similar to those of igniter tubes and triggered light. In Mode B, when triggering laser energy is set to 10 mJ, a pulse width is 20 ns, and peak power is 0.5 MW, the switch operates at a voltage of 4.6 kV, with a short-circuit current reaching 8.5 kA and a current rise time of 66 ns, achieving a di/dt value exceeding 129 kA/μs. The main characteristic is that the initial conduction of the switch satisfies the photonic linear conduction mode, while the later conduction exhibits the field-induced nonlinear conduction mode, thus achieving both fast-rise-time output and the capability for large current and wide pulse width, reflecting a hybrid conduction mode. This mode is suitable for high-power and wide-pulse applications, such as accelerator power supplies, its characteristics are similar to those of hydrogen thyratrons and pseudo-spark switches. The discovery and validation of multiple operating modes for the switch significantly enhance the di/dt and peak power of power semiconductor switching devices, laying a theoretical and experimental foundation for the development of semiconductor switches with ultra-high peak power. Additionally, the switching devices are packaged according to their different operating modes and have been used in accelerator power supplies, solid-state detonators, and high-stability pulse drive sources, achieving positive results. -
Keywords:
- pulsed power /
- optically controlled switch /
- multi-mode /
- turn-on speed
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图 1 耐受直流型固态开关器件
Figure 1. Direct current tolerant solid-state switching.
图 2 脉冲或关断型固态开关器件
Figure 2. Pulse or turn-off type solid-state switch.
图 3 开关芯片结构示意图
Figure 3. Schematic diagram of switch chip structure.
图 4 器件元胞结构尺寸与正向电场分布图
Figure 4. Cell structure dimensions and forward electric field distribution diagram of the chip.
图 5 流片实现的多种尺寸的开关芯片
Figure 5. Fabricated switch chips in various sizes.
图 6 光控多门极晶闸管测试电路及照片 (a)测试电路原理图; (b)测试电路照片
Figure 6. Optically controlled multi-gate thyristor test circuit and photos: (a) Schematic diagram of the test circuit; (b) photo of the test circuit.
图 7 触发激光峰值功率与开关di/dt、导通延迟时间的关系图
Figure 7. Graph of the relationship between trigger laser peak power and switch di/dt, turn-on delay time.
图 8 注入激光峰值功率与开关输出峰值功率比值关系图
Figure 8. Graph of the ratio relationship between injected laser peak power and switch output peak power.
图 9 多种工作模式的设想及典型特征
Figure 9. Conceptual designs and typical characteristic diagrams of various operating modes.
图 10 电路仿真的光控多门极晶闸管电流电压曲线图
Figure 10. Simulated current-voltage curve of an optically controlled multi-gate thyristor.
图 11 电路中光控多门极晶闸管在0, 10, 70 ns时电子浓度分布
Figure 11. Electron concentration distribution in the optically controlled multi-gate thyristor at 0, 10, and 70 ns in the circuit.
图 12 电路仿真的光控多门极晶闸管电流电压曲线图
Figure 12. Simulated current voltage curve diagram of an optically controlled multi-gate thyristor.
图 13 电路中光控多门极晶闸管在0, 80, 600 ns时电子浓度分布图
Figure 13. Electron concentration distribution diagrams of the optically controlled multi-gate thyristor at 0, 80, and 600 ns in the circuit.
图 14 A模式验证测试结构
Figure 14. Verification test structure for Mode A.
图 15 A模式验证测试波形
Figure 15. Verification test waveform for Mode A.
图 16 C模式下测试电路
Figure 16. Test circuit in Mode C.
图 17 C模式下电压电流波形
Figure 17. Voltage and current waveforms in Mode C.
图 18 B模式下测试电路
Figure 18. Test circuit in Mode B.
图 19 B模式下测试波形
Figure 19. Test waveform in Mode B.
图 20 基于不同模式特征完成的3种封装 (a) A模式特征器件封装; (b) B模式特征器件封装; (c) C模式特征器件封装
Figure 20. Three packages based on different mode characteristics: (a) Mode A characteristic device Package; (b) Mode B characteristic device package; (c) Mode C characteristic device package.
图 21 基于开关的多模式特征研制的器件开展的典型应用验证 (a)多路同步固态起爆器应用; (b) KDP光开关驱动脉冲源应用
Figure 21. Typical application verification of devices developed based on multi-mode switch characteristics: (a) Multi-channel synchronous solid-state initiator application; (b) KDP optical switch drive pulse source application.
表 1 激光参数与开关典型参数实验数据表
Table 1. Experimental data table of laser parameters and typical switch parameters.
激光功率
/MW激光能量
/mJ充电电压
/kV电压下降
时间/ns电流峰值
/kA电流上升
时间/ns导通延迟
时间/ns电流脉冲
宽度/ns开关峰值
功率/MW功率比值/N di/dt/(kA
·μs-1)2.16 21.6 4.5 44.3 10.54 67.2 13.5 652 47.4 22 157 1.92 19.2 4.5 44.6 10.54 67.3 12.6 654 47.4 25 157 1.68 16.8 4.5 45.4 10.48 65.3 12.1 665 47.2 28 160 1.47 14.7 4.5 45.4 10.42 66.4 11 667 46.9 32 157 1.32 13.2 4.5 46.3 10.34 64.3 10.1 661 46.5 35 161 1.08 10.8 4.5 48.6 10.35 68 8.88 663 46.6 43 152 0.87 8.7 4.5 50.2 10.07 71.6 10.2 684 45.3 52 141 0.678 6.78 4.5 46 9.71 65.1 13.7 742 43.7 64 149 0.6 6 4.5 47.4 9.71 65.1 13.5 742 43.7 73 149 0.54 5.4 4.5 52.5 9.41 62.7 13.5 765 42.3 78 150 0.46 4.6 4.5 60.3 9.17 63.3 13.4 795.6 41.3 90 145 0.39 3.9 4.5 68 8.62 63 14.1 832 38.8 99 137 0.3 3 4.5 128 8.52 70.5 15.4 829 38.3 128 121 0.24 2.4 4.5 158.4 8.48 95.8 18.6 835 38.2 159 89 0.162 1.62 4.5 196 8.39 130.4 25.9 842 37.8 233 64 0.072 0.72 4.5 221 8.13 222 52.6 857 36.6 508 37 0.057 0.57 4.5 254 8.23 199 96 848 37.0 650 41 0.0474 0.474 4.5 249.7 8.23 202 102 850 37.0 781 41 0.0438 0.438 4.5 263 8.22 197.8 108 869 37.0 845 42 0.0372 0.372 4.5 265 8.19 208.9 119 858 36.9 991 39 0.0312 0.312 4.5 278 8.17 218 133 852 36.8 1178 37 0.0252 0.252 4.5 252 8.16 212 153 874 36.7 1457 38 0.0186 0.186 4.5 251 8.13 203 181 878 36.6 1967 40 0.0126 0.126 4.5 271 7.97 212 276 897 35.9 2846 38 0.0048 0.048 4.5 351 7.78 245 406 955 35.0 7294 32 
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表 2 器件驱动激光能量、短路电流、开通前沿的关系
Table 2. The relationship between device drive laser energy, short-circuit current, and turn-on edge.
激光能量/mJ 工作电压/kV 短路电流/kA 电流前沿
/ns电流脉宽
/nsdi/dt
/(kA·μs–1)0.9 4 1.88 66.8 75.0 28 2.1 4 3.42 40 49.0 86 2.6 4 3.75 36.6 46.0 102 3.6 4 5.65 20.4 36.7 277 4.6 4 5.84 18.8 36.0 311 5.4 4 6.48 18.9 38.0 343 6.3 4 7 18.7 37.7 374 7.4 4 7.3 18.6 38.7 392 8.5 4 7.91 18.6 38.3 425
DownLoad: CSV
表 3 不同电压下开关的导通特性
Table 3. The conduction characteristics of the switch at different voltages.
激光
能量/μJ工作
电压
/kV短路
电流/kA电流
前沿
/nsdi/dt
/
(kA·μs–1)200 5.0 2.0 128 16 200 6.0 2.8 121 23 200 7.0 3.9 118 33 200 8.0 5.4 111 49 200 8.5 6.0 110 55
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