Influence of morphological characteristics of graphene on its field emission properties

Zheng Qin-Ren; Zhan Fu-Zhi; She Jun-Yi; Wang Jian-Yu; Shi Ruo-Li; Meng Guo-Dong

doi:10.7498/aps.73.20231784

Abstract

Graphene is one of the most potential field emission cathode materials due to its excellent electrical, thermal, and mechanical properties, as well as rich edge structures. In this paper, we study the growth parameters of graphene prepared by chemical vapor deposition, and prepare three kinds of morphologies of graphene: single-layer graphene, graphene islands, and graphene with buffer layers, and then we explore the influence of the morphological characteristics of graphene on its field emission properties, and analyze the mechanism of influence of the morphological characteristics of graphene on its field emission properties through COMSOL. Comparing with single-layer graphene, the turn-on field of graphene islands and that of graphene with buffer layers decrease to 5.55 V/μm and 5.85 V/μm, respectively. The current densities also increase to 40.3 μA/cm² and 26.4 μA/cm², respectively. On the other hand, the field emission currents of single-layer graphene and graphene with buffer layers are more stable. In a 5-hour test, the current densities only decrease by 2% and 4%, respectively. COMSOL simulation shows that the morphological characteristics of graphene have significant influences on the electric field distribution characteristics and heat dissipation capacity. Graphene islands and graphene with buffer layers have exposed edges, leading to local electric field concentration, and thus improving field emission properties. The graphene islands are distributed discretely on the substrate, forming no continuous graphene film and lacking transverse heat dissipation channels, so the accumulation of heat will cause damage to the graphene emitter, and affect the stability of its field emission current. This study will be of great benefit to the understanding of the influence of the morphological characteristics of graphene on its field emission properties, and improving the field emission properties of graphene materials.

Keywords:

Authors and contacts

1.
State Key Laboratory of Electrical Insulation of Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China
2.
Tianfu New District Power Supply Company State Grid, Sichuan Electric Power Company, Chengdu 610095, China

Corresponding author: Meng Guo-Dong, gdmengxjtu@xjtu.edu.cn

Funds: Project supported by National Natural Science Foundation of China (Grant No. 51977169), the Fundamental Research Funds for the Central Universities, China (Grant Nos. xzy012023152, xtr062023001), and the State Key Laboratory of Elec-trical Insulation and Power Equipment, China (Grant No. EIPE22315).

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References

[1]	Zhang Y B, Tan Y W, Stormer H L, Kim P 2005 Nature 438 201 Google Scholar
[2]	Prasher R 2010 Science 328 185 Google Scholar
[3]	Lee C G, Wei X D, Kysar J W, Hone J 2008 Science 321 385 Google Scholar
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[18]	Kleshch V I, Bandurin D A, Orekhov A S, Purcell S T, Obraztsov A N 2015 Appl. Surf. Sci. 357 1967 Google Scholar
[19]	成桂霖, 杨健君, 全盛, 钟健, 于军胜 2022 真空科学与技术学报 42 290 Cheng G L, Yang J J, Quan S, Zhong J, Yu J S 2022 Vacuum Sci. Tech. 42 290
[20]	Li Z B 2015 Ultramicroscopy 159 162 Google Scholar
[21]	张晓波, 青芳竹, 李雪松 2019 68 096801 Google Scholar Zhang X B, Qing F Z, Li X S 2019 Acta Phys. Sin. 68 096801 Google Scholar
[22]	Graf D, Molitor F, Ensslin K, Stampfer C, Jungen A, Hierold C, Wirtz L 2007 Nano Lett. 7 238 Google Scholar
[23]	Wang Y Y, Ni Z H, Yu T, Shen Z X, Wang H M, Wu Y H, Chen W, Shen Wee A T 2008 J. Phys. Chem. C 112 10637 Google Scholar
[24]	Fowler R H, Nordheim L 1928 Proc. R. Soc. Lond. A 119 173 Google Scholar
[25]	Zhang X, Wang L, Xin J, Yakobson B I, Ding F 2014 J. Am. Chem. Soc. 136 3040 Google Scholar
[26]	Lee S W, Lee S S, Yang E H 2009 Nanoscale Res. Lett. 4 1218 Google Scholar
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[28]	Liu J, Zeng B, Wu Z, Zhu J, Liu X 2010 Appl. Phys. Lett. 97 033109 Google Scholar
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[30]	Tang S, Zhang Y, Zhao P, Zhan R, Chen J, Deng S 2021 Nanoscale 13 5234 Google Scholar

Cited By

图 1 (a)石墨烯生长实验装置示意图; (b)场发射测试系统示意图; (c)场发射测试系统实物图

Figure 1. (a) Schematic diagram of the experimental setup for graphene growth; (b) schematic diagram of the testing system for field emission; (c) physical diagram of the testing system for field emission.

DownLoad: Full-Size Img PowerPoint

图 2 转移前的石墨烯. 光镜图　(a)单层石墨烯薄膜; (b)石墨烯岛; (c)有缓冲层石墨烯. 电镜图　(d)单层石墨烯薄膜; (e)石墨烯岛; (f)有缓冲层石墨烯

Figure 2. Graphene before transferring. Optical microscope images of (a) single-layer grapheme, (b) graphene islands, (c) graphene with buffer layers. Scanning electron microscope images of (d) single-layer grapheme, (e) graphene islands, (f) graphene with buffer layers.

DownLoad: Full-Size Img PowerPoint

图 3 转移后的石墨烯. 光镜图　(a)单层石墨烯薄膜; (b)石墨烯岛; (c)有缓冲层石墨烯. 电镜图　(d)单层石墨烯薄膜; (e)石墨烯岛; (f)有缓冲层石墨烯. 拉曼光谱图　(g)单层石墨烯薄膜; (h)石墨烯岛; (i)有缓冲层石墨烯

Figure 3. Graphene after transferring. Optical microscope images of (a) single-layer grapheme, (b) graphene islands, (c) graphene with buffer layers. Scanning electron microscope images of (d) single-layer grapheme, (e) graphene islands, (f) graphene with buffer layers. Raman spectra images of (g) single-layer grapheme, (h) graphene islands, (i) graphene with buffer layers.

DownLoad: Full-Size Img PowerPoint

图 4 不同形貌石墨烯宏观形貌电镜表征结果及结构示意图　(a)单层石墨烯薄膜; (b)石墨烯岛; (c)有缓冲层石墨烯

Figure 4. Scanning electron microscope images and schematic diagrams of graphene with different macroscopic morphologies: (a) Single-layer graphene; (b) graphene islands; (c) graphene with buffer layers.

DownLoad: Full-Size Img PowerPoint

图 5 不同形貌石墨烯场发射性能　(a)J-E曲线; (b) F-N曲线

Figure 5. Field emission properties of graphene with different morphologies: (a) J-E curves; (b) F-N curves.

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图 6 不同形貌石墨烯场发射电流稳定性　(a)单层石墨烯薄膜; (b)有缓冲层石墨烯; (c)石墨烯岛

Figure 6. Field emission current stability of graphene with different morphologies: (a) Single-layer graphene; (b) graphene with buffer layers; (c) graphene islands.

DownLoad: Full-Size Img PowerPoint

图 7 石墨烯电场分布云图　(a)连续薄膜; (b)边界结构

Figure 7. Electric field distribution map of graphene: (a) Contimuous layer; (b) edge.

DownLoad: Full-Size Img PowerPoint

图 8 场发射后石墨烯的电镜图　(a)单层石墨烯薄膜; (b)有缓冲层石墨烯; (c)石墨烯岛

Figure 8. Scanning electron microscope images of graphene after field emission: (a) Single-layer graphene; (b) graphene with buffer layers; (c) graphene islands.

DownLoad: Full-Size Img PowerPoint

图 9 石墨烯场发射温度分布情况　(a)单层石墨烯薄膜; (b)有缓冲层石墨烯; (c)石墨烯岛

Figure 9. Temperature distribution of graphene after field emission: (a) Single-layer graphene; (b) graphene with buffer layers; (c) graphene islands.

DownLoad: Full-Size Img PowerPoint

表 1 不同形貌石墨烯的CVD生长参数

Table 1. CVD growth parameters of graphene with different morphologies.

石墨烯形貌类型生长温度/
℃ 甲烷浓度/
sccm 氢气浓度/
sccm 生长时间/
min

单层石墨烯薄膜 1030 2 20 5
石墨烯岛 1030 2 30 5
有缓冲层石墨烯 1030 5 20 5

DownLoad: CSV

map

[1]	Zhang Y B, Tan Y W, Stormer H L, Kim P 2005 Nature 438 201 Google Scholar
[2]	Prasher R 2010 Science 328 185 Google Scholar
[3]	Lee C G, Wei X D, Kysar J W, Hone J 2008 Science 321 385 Google Scholar
[4]	Novoselov K S, Fal′ko V I, Colombo L, Gellert P R, Schwab M G, Kim K 2012 Nature 490 192 Google Scholar
[5]	Chen Y C, Chen J, Li Z B 2023 Nanomaterials 13 2437 Google Scholar
[6]	Patra A, More M A, Late D J, Rout C S 2021 J. Mater. Chem. C 9 11059 Google Scholar
[7]	Shao X Y, Srinivasan A, Ang W K, Khursheed A 2018 Nat. Commun. 9 1288 Google Scholar
[8]	Yamaguchi H, Murakami K, Eda G, Fujita T, Guan P, Wang W H, Gong C, Boisse J, Miller S, Acik M, Cho K, Chabal Y J, Chen M W, Wakaya F, Takai M, Chhowalla M 2011 ACS Nano 5 4945 Google Scholar
[9]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666 Google Scholar
[10]	陈浩, 彭同江, 刘波, 孙红娟, 雷德会 2017 66 080701 Google Scholar Chen H, Peng T J, Liu B, Sun H J, Lie D H 2017 Acta Phys. Sin. 66 080701 Google Scholar
[11]	Berger C, Song Z, Li X, Wu X, Brown N, Naud C, Mayou D, Li T, Hass J, Marchenkov A N, Conrad E H, First P N, Heer W A D 2006 Science 312 1191 Google Scholar
[12]	Li X, Cai W, Colombo L, Ruoff R S 2009 Nano Lett. 9 4268 Google Scholar
[13]	Meng G D, Zhan F Z, She J Y, Xie J A, Zheng Q R, Cheng Y H, Yin Z Y 2023 Nanoscale 15 15994 Google Scholar
[14]	Xie J A, Meng G D, Chen B Y, Li Z, Yin Z Y, Cheng Y H 2022 ACS Appl. Mater. Interfaces 14 45716 Google Scholar
[15]	Regmi M, Chisholm M F, Eres G 2012 Carbon 50 134 Google Scholar
[16]	Liu W, Li H, Xu C, Khatami Y, Banerjee K 2011 Carbon 49 4122 Google Scholar
[17]	Deokar G, Avila J, Razado-Colambo I, Codron J L, Boyaval C, Galopin E, Asensio M C, Vignaud D 2015 Carbon 89 82 Google Scholar
[18]	Kleshch V I, Bandurin D A, Orekhov A S, Purcell S T, Obraztsov A N 2015 Appl. Surf. Sci. 357 1967 Google Scholar
[19]	成桂霖, 杨健君, 全盛, 钟健, 于军胜 2022 真空科学与技术学报 42 290 Cheng G L, Yang J J, Quan S, Zhong J, Yu J S 2022 Vacuum Sci. Tech. 42 290
[20]	Li Z B 2015 Ultramicroscopy 159 162 Google Scholar
[21]	张晓波, 青芳竹, 李雪松 2019 68 096801 Google Scholar Zhang X B, Qing F Z, Li X S 2019 Acta Phys. Sin. 68 096801 Google Scholar
[22]	Graf D, Molitor F, Ensslin K, Stampfer C, Jungen A, Hierold C, Wirtz L 2007 Nano Lett. 7 238 Google Scholar
[23]	Wang Y Y, Ni Z H, Yu T, Shen Z X, Wang H M, Wu Y H, Chen W, Shen Wee A T 2008 J. Phys. Chem. C 112 10637 Google Scholar
[24]	Fowler R H, Nordheim L 1928 Proc. R. Soc. Lond. A 119 173 Google Scholar
[25]	Zhang X, Wang L, Xin J, Yakobson B I, Ding F 2014 J. Am. Chem. Soc. 136 3040 Google Scholar
[26]	Lee S W, Lee S S, Yang E H 2009 Nanoscale Res. Lett. 4 1218 Google Scholar
[27]	Qian M, Feng T, Ding H, Lin L, Li H, Chen Y, Sun Z 2009 Nanotechnology 20 425702 Google Scholar
[28]	Liu J, Zeng B, Wu Z, Zhu J, Liu X 2010 Appl. Phys. Lett. 97 033109 Google Scholar
[29]	Xiao Z M, She J C, Deng S Z, Tang Z K, Li Z B, Lu J M, Xu N S 2010 ACS Nano 4 6332 Google Scholar
[30]	Tang S, Zhang Y, Zhao P, Zhan R, Chen J, Deng S 2021 Nanoscale 13 5234 Google Scholar

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