不同基底的GaN纳米薄膜制备及其场发射增强研究

陈程程; 刘立英; 王如志; 宋雪梅; 王波; 严辉

doi:10.7498/aps.62.177701

摘要

采用脉冲激光沉积 (PLD) 方法在Si及SiC基底上制备了相同厚度的GaN纳米薄膜并对其进行了微结构表征及场发射性能测试分析. 结果表明: 基底对于GaN薄膜微结构及场发射性能具有显著的影响. 在SiC基底上所制备的GaN纳米薄膜相对于Si基底上的GaN纳米薄膜, 其场发射性能得到显著提升, 其场发射电流可以数量级增大. 场发射显著增强应源于纳米晶微结构及取向极化诱导增强效应. 本研究结果表明, 要获得优异性能场发射薄膜, 合适基底及薄膜晶体微结构需要重点考虑.

关键词:

基底 /
GaN /
纳米薄膜 /
场发射

Abstract

Using pulsed laser deposition (PLD) method, we have prepared nanostructured GaN films of the same thickness on Si and SiC substrates, and analyzed their microstructure characterization and field emission properties. The results showed that the substrates of GaN nanostructured films had significant effect on the microstructure and field emission properties. Compared with the GaN nano-film on Si substrate, the field emission from the GaN nano-film on SiC substrate has been significantly improved: its field emission current was increased by orders of magnitude. The field emission enhancement should be originated from the nanocrystalline microstructure and its orientation polarization induced field enhancement effect. Results indicate that to prepare field emission films of outstanding performance, appropriate substrates and crystal microstructures of the films are the key issues.

Keywords:

作者及机构信息

1.
北京工业大学材料科学与工程学院, 薄膜材料与技术实验室, 北京 100124;

2.
北京工业大学应用数理学院, 北京 100124

基金项目: 国家自然科学基金(批准号: 11274029, 11074017, 51202007, 11274028);北京市科技新星计划(批准号: 2008B10);北京市科技计划重点项目(批准号: D121100001812002);北京市青年拔尖人才培育计划(批准号: CIT&TCD201204037)和北京工业大学基础研究基金资助的课题.

Authors and contacts

1.
Laboratory of Thin Film Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China;

2.
College of Applied Sciences, Beijing University of Technology, Beijing 100124, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11274029,11074017, 51202007, 11274028), the Beijing Nova Program (Grant No. 2008B10), the Key Programs of Beijing Plan of Science and Technology (Grant No. D121100001812002), the Importation and Development of High-Caliber Talents Project of Beijing Municipal Institutions (Grant No. CIT&TCD201204037), and the Basic Research Foundation of Beijing University of Technology.

参考文献

[1]	Yoshida H, Urushido T, Miyake H, Hiramatsu K 2001 Jpn. J. Appl. Phys. 40 L1301
[2]	Ng D K T, Hong M H, Tan L S, Zhu Y W, Sow C H 2007 Nanotechnology 18 375707
[3]	Kimura CYamamota THori TSugino T 2009 Appl. Phys. Lett. 79 4533
[4]	Joag D S,Late D J, Lanke U D 2004 Solid State Commun. 130 305
[5]	Wang F Y, Wang R Z, Zhao W, Song X M, Wang B, Yan H 2009 Sci. China. Ser. F 52 1947
[6]	Zhao W, Wang R Z, Song X M, Wang H, Wang B, Yan H, Chu P K 2010 Appl. Phys. Lett. 96 101
[7]	Wang D, Jia S, Chen K J, Lau K M, Dikme Y, van Gemmern P, Lin Y C, Kalisch H, Jansen R H, Heuken M 2005 J. Appl. Phys. 97 056103
[8]	Honda Y, Kuroiwa Y, Yamaguchi M, Sawaki N 2002 Appl. Phys. Lett. 80 222
[9]	Xiong C B, Jiang F Y, Fang W Q, Wang L, Mo C L 2008 Acta. Phys. Sin. 57 3176 (in Chinese) [熊传兵, 江风益, 方文卿, 王立, 莫春兰 2008 57 3716]
[10]	Krost A, Dadgar A 2002 Mat. Sci. Eng. B-Solid 93 77
[11]	Goldys E M, Godlewski M 2000 Appl. Phys. a-Mater 70 329
[12]	Komiyama J, Abe Y, Suzuki S, Nakanishi H 2006 J. Appl. Phys. 100 033519
[13]	Tran N H, Lamb R N, Lai L J, Yang Y W 2005 J. Phys. Chem. B 109 18348
[14]	Jiang Y, Luo Y, Xi G Y, Wang L, Li H T, Zhao W, Han Y J 2009 Acta. Phys. Sin. 58 7282 (in Chinese) [江洋, 罗毅, 席光义, 汪莱, 李洪涛, 赵维, 韩彦军 2009 58 7282]
[15]	Pradhan D, Lin I N 2009 ACS Applied Materials & Interfaces 1 1444
[16]	Ma B, Hu W, Miyake H, Hiramatsu K 2009 Appl. Phys. Lett. 95 121910
[17]	Zhao W, Wang R Z, Song Z W, Wang H, Yan H, Chu P K 2013 The Journal of Physical Chemistry C 117 1518
[18]	Arslan E, Btn S, Lisesivdin S B, Kasap M, Ozcelik S, Ozbay E 2008 J. Appl. Phys. 103 103701
[19]	Bouya M, Carisetti D, Malbert N, Labat N, Perdu P, Clément J C, Bonnet M, Pataut G 2007 Microelectronics Reliability 47 1630
[20]	Jiang Z Y, Xu X H, Wu H S, Zhang F Q, Jin Z H 2002 Acta. Phys. Sin. 51 1586 (in Chinese) [姜振益, 许小红, 武海顺, 张富强, 金志浩 2002 51 1586]
[21]	Dadgar A, Schulze F, Wienecke M, Gadanecz A, Bläsing J, Veit P, Hempel T, Diez A, Christen J, Krost A 2007 New Journal of Physics 9 389
[22]	Ishikawa H, Yamamoto K, Egawa T, Soga T, Jimbo T, Umeno M 1998 J. Cryst. Growth 189 178
[23]	Dadgar A, Veit P, Schulze F, Bläsing J, Krtschil A, Witte H, Diez A, Hempel T, Christen J, Clos R, Krost A 2007 Thin Solid Films 515 4356
[24]	Pal S, Jacob C 2004 Bull. Mat. Sci. 27 501
[25]	Chen Y, Wang W X, Li Y, Jiang Y, Xu P Q, Ma Z G, Song J, Chen H 2011 Chinese Journal of Luminescence 32 896
[26]	Fowler R H, Nordheim L 1928 Proc. Royal. Soc. 119 173
[27]	Young R D 1959 Phys. Rev. B 113 110
[28]	Fowler R H, Nordheim L 1928 Proceeding of the Royal Society of London: A 119 173
[29]	Semenenko M 2010 J. Appl. Phys. 107 013702
[30]	Underwood R D, Kozodoy P, Keller S, DenBaars S P, Mishra U K 1998 Appl. Phys. Lett. 73 405
[31]	Simon J, Protasenko V, Lian C X, Xing H L, Jena D 2010 Science 327 60
[32]	Ranjan V, Allan G, Priester C, Delerue C 2003 Phys. Rev. B 68 115305
[33]	Bechstedt F, Grossner U, Furthmuller J 2000 Phys. Rev. B 62 8003
[34]	Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[35]	Binh V T, Adessi C 2000 Phys. Rev. Lett. 85 864
[36]	Semet V, Binh V T, Zhang J P, Yang J, Khan M A, Tsu R 2004 Appl. Phys. Lett. 84 1937
[37]	Dadykin A A, Naumovets A G 2003 Materials Science and Engineering: A 353 12
[38]	Ikeda T, Teii K 2009 Appl. Phys. Lett. 94 143102
[39]	Hirth J P, Pond R C, Lothe J 2007 Acta Materialia 55 5428
[40]	Zapol P, Sternberg M, Curtiss L A, Frauenheim T, Gruen D M 2002 Phys. Rev. B 65 045403

施引文献

[1]	Yoshida H, Urushido T, Miyake H, Hiramatsu K 2001 Jpn. J. Appl. Phys. 40 L1301
[2]	Ng D K T, Hong M H, Tan L S, Zhu Y W, Sow C H 2007 Nanotechnology 18 375707
[3]	Kimura CYamamota THori TSugino T 2009 Appl. Phys. Lett. 79 4533
[4]	Joag D S,Late D J, Lanke U D 2004 Solid State Commun. 130 305
[5]	Wang F Y, Wang R Z, Zhao W, Song X M, Wang B, Yan H 2009 Sci. China. Ser. F 52 1947
[6]	Zhao W, Wang R Z, Song X M, Wang H, Wang B, Yan H, Chu P K 2010 Appl. Phys. Lett. 96 101
[7]	Wang D, Jia S, Chen K J, Lau K M, Dikme Y, van Gemmern P, Lin Y C, Kalisch H, Jansen R H, Heuken M 2005 J. Appl. Phys. 97 056103
[8]	Honda Y, Kuroiwa Y, Yamaguchi M, Sawaki N 2002 Appl. Phys. Lett. 80 222
[9]	Xiong C B, Jiang F Y, Fang W Q, Wang L, Mo C L 2008 Acta. Phys. Sin. 57 3176 (in Chinese) [熊传兵, 江风益, 方文卿, 王立, 莫春兰 2008 57 3716]
[10]	Krost A, Dadgar A 2002 Mat. Sci. Eng. B-Solid 93 77
[11]	Goldys E M, Godlewski M 2000 Appl. Phys. a-Mater 70 329
[12]	Komiyama J, Abe Y, Suzuki S, Nakanishi H 2006 J. Appl. Phys. 100 033519
[13]	Tran N H, Lamb R N, Lai L J, Yang Y W 2005 J. Phys. Chem. B 109 18348
[14]	Jiang Y, Luo Y, Xi G Y, Wang L, Li H T, Zhao W, Han Y J 2009 Acta. Phys. Sin. 58 7282 (in Chinese) [江洋, 罗毅, 席光义, 汪莱, 李洪涛, 赵维, 韩彦军 2009 58 7282]
[15]	Pradhan D, Lin I N 2009 ACS Applied Materials & Interfaces 1 1444
[16]	Ma B, Hu W, Miyake H, Hiramatsu K 2009 Appl. Phys. Lett. 95 121910
[17]	Zhao W, Wang R Z, Song Z W, Wang H, Yan H, Chu P K 2013 The Journal of Physical Chemistry C 117 1518
[18]	Arslan E, Btn S, Lisesivdin S B, Kasap M, Ozcelik S, Ozbay E 2008 J. Appl. Phys. 103 103701
[19]	Bouya M, Carisetti D, Malbert N, Labat N, Perdu P, Clément J C, Bonnet M, Pataut G 2007 Microelectronics Reliability 47 1630
[20]	Jiang Z Y, Xu X H, Wu H S, Zhang F Q, Jin Z H 2002 Acta. Phys. Sin. 51 1586 (in Chinese) [姜振益, 许小红, 武海顺, 张富强, 金志浩 2002 51 1586]
[21]	Dadgar A, Schulze F, Wienecke M, Gadanecz A, Bläsing J, Veit P, Hempel T, Diez A, Christen J, Krost A 2007 New Journal of Physics 9 389
[22]	Ishikawa H, Yamamoto K, Egawa T, Soga T, Jimbo T, Umeno M 1998 J. Cryst. Growth 189 178
[23]	Dadgar A, Veit P, Schulze F, Bläsing J, Krtschil A, Witte H, Diez A, Hempel T, Christen J, Clos R, Krost A 2007 Thin Solid Films 515 4356
[24]	Pal S, Jacob C 2004 Bull. Mat. Sci. 27 501
[25]	Chen Y, Wang W X, Li Y, Jiang Y, Xu P Q, Ma Z G, Song J, Chen H 2011 Chinese Journal of Luminescence 32 896
[26]	Fowler R H, Nordheim L 1928 Proc. Royal. Soc. 119 173
[27]	Young R D 1959 Phys. Rev. B 113 110
[28]	Fowler R H, Nordheim L 1928 Proceeding of the Royal Society of London: A 119 173
[29]	Semenenko M 2010 J. Appl. Phys. 107 013702
[30]	Underwood R D, Kozodoy P, Keller S, DenBaars S P, Mishra U K 1998 Appl. Phys. Lett. 73 405
[31]	Simon J, Protasenko V, Lian C X, Xing H L, Jena D 2010 Science 327 60
[32]	Ranjan V, Allan G, Priester C, Delerue C 2003 Phys. Rev. B 68 115305
[33]	Bechstedt F, Grossner U, Furthmuller J 2000 Phys. Rev. B 62 8003
[34]	Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[35]	Binh V T, Adessi C 2000 Phys. Rev. Lett. 85 864
[36]	Semet V, Binh V T, Zhang J P, Yang J, Khan M A, Tsu R 2004 Appl. Phys. Lett. 84 1937
[37]	Dadykin A A, Naumovets A G 2003 Materials Science and Engineering: A 353 12
[38]	Ikeda T, Teii K 2009 Appl. Phys. Lett. 94 143102
[39]	Hirth J P, Pond R C, Lothe J 2007 Acta Materialia 55 5428
[40]	Zapol P, Sternberg M, Curtiss L A, Frauenheim T, Gruen D M 2002 Phys. Rev. B 65 045403

[1]	徐爽, 许晟瑞, 王心颢, 卢灏, 刘旭, 贠博祥, 张雅超, 张涛, 张进成, 郝跃. 斜切蓝宝石衬底上GaN薄膜的位错降低机制. , 2023, 72(19): 196101. doi: 10.7498/aps.72.20230793
[2]	杨孟骐, 姬宇航, 梁琦, 王长昊, 张跃飞, 张铭, 王波, 王如志. 四方结构GaN纳米线制备、掺杂调控及其场发射性能研究. , 2020, 69(16): 167805. doi: 10.7498/aps.69.20200445
[3]	李艳茹, 何秋香, 王芳, 向浪, 钟建新, 孟利军. 金属纳米薄膜在石墨基底表面的动力学演化. , 2016, 65(3): 036804. doi: 10.7498/aps.65.036804
[4]	张培增, 李瑞山, 谢二庆, 杨华, 王璇, 王涛, 冯有才. 电化学方法制备ZnO纳米颗粒掺杂类金刚石薄膜及其场发射性能研究. , 2012, 61(8): 088101. doi: 10.7498/aps.61.088101
[5]	林志宇, 张进成, 许晟瑞, 吕玲, 刘子扬, 马俊彩, 薛晓咏, 薛军帅, 郝跃. 斜切蓝宝石衬底MOCVD生长GaN薄膜的透射电镜研究. , 2012, 61(18): 186103. doi: 10.7498/aps.61.186103
[6]	乔建良, 常本康, 钱芸生, 王晓晖, 李飙, 徐源. GaN真空面电子源光电发射机理研究. , 2011, 60(12): 127901. doi: 10.7498/aps.60.127901
[7]	杨延宁, 张志勇, 张富春, 张威虎, 闫军锋, 翟春雪. 纳米金刚石的变温场发射. , 2010, 59(4): 2666-2671. doi: 10.7498/aps.59.2666
[8]	郑新亮, 李广山, 钟寿仙, 田进寿, 李振红, 任兆玉. 激光烧蚀对碳纳米管薄膜场发射性能的影响. , 2008, 57(12): 7912-7918. doi: 10.7498/aps.57.7912
[9]	宋淑芳, 陈维德, 许振嘉, 徐叙瑢. 掺Er/Er+O的GaN薄膜光学性质的研究. , 2007, 56(3): 1621-1626. doi: 10.7498/aps.56.1621
[10]	宋淑芳, 陈维德, 许振嘉, 徐叙瑢. 掺Er/Pr的GaN薄膜深能级的研究. , 2006, 55(3): 1407-1412. doi: 10.7498/aps.55.1407
[11]	李强, 梁二军. 碳、碳氮和硼碳氮纳米管场发射性能的比较研究. , 2005, 54(12): 5931-5936. doi: 10.7498/aps.54.5931
[12]	王新庆, 王淼, 李振华, 杨兵, 王凤飞, 何丕模, 徐亚伯. 单根纳米导线场发射增强因子的计算. , 2005, 54(3): 1347-1351. doi: 10.7498/aps.54.1347
[13]	刘仕锋, 秦国刚, 尤力平, 张纪才, 傅竹西, 戴伦. 在双热舟化学气相沉积系统中通过掺In技术生长GaN纳米线和纳米锥. , 2005, 54(9): 4329-4333. doi: 10.7498/aps.54.4329
[14]	宋教花, 张耿民, 张兆祥, 孙明岩, 薛增泉. 多壁碳纳米管阵列场发射研究. , 2004, 53(12): 4392-4397. doi: 10.7498/aps.53.4392
[15]	李海钧, 顾长志, 窦艳, 李俊杰. 单根准直碳纳米纤维的场发射特性. , 2004, 53(7): 2258-2262. doi: 10.7498/aps.53.2258
[16]	张进城, 郝跃, 李培咸, 范隆, 冯倩. 基于透射谱的GaN薄膜厚度测量. , 2004, 53(4): 1243-1246. doi: 10.7498/aps.53.1243
[17]	张兆祥, 张耿民, 侯士敏, 张浩, 顾镇南, 刘惟敏, 赵兴钰, 薛增泉. 利用场发射显微镜研究O2对单壁碳纳米管场发射的影响. , 2003, 52(5): 1282-1286. doi: 10.7498/aps.52.1282
[18]	宋淑芳, 周生强, 陈维德, 朱建军, 陈长勇, 许振嘉. 掺铒GaN薄膜的背散射/沟道分析和光致发光研究. , 2003, 52(10): 2558-2562. doi: 10.7498/aps.52.2558
[19]	孙建平, 张兆祥, 侯士敏, 赵兴钰, 施祖进, 顾镇南, 刘惟敏, 薛增泉. 用场发射显微镜研究单壁碳纳米管场发射. , 2001, 50(9): 1805-1809. doi: 10.7498/aps.50.1805
[20]	张德恒, 刘云燕, 张德骏. 用MOCVD方法制备的n型GaN薄膜紫外光电导. , 2001, 50(9): 1800-1804. doi: 10.7498/aps.50.1800

计量

文章访问数: 6611
PDF下载量: 591
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板