磁场辅助热处理金属化碳纳米管场发射性能

叶芸; 陈填源; 郭太良; 蒋亚东

doi:10.7498/aps.63.086802

摘要

利用化学镀方法对多壁碳纳米管（multi-walled carbon nanotubes，MWNTs）表面金属化镀镍（MWNTs/Ni），采用丝网印刷制备MWNTs/Ni场发射阴极，并在磁场辅助下热处理所得阴极，研究磁场辅助热处理对MWNTs/Ni阴极的场发射性能的影响. 经300 mT磁场辅助热处理的MWNTs/Ni的场发射阴极开启场强约为0.80 V-1，场增强因子约为16068. 对单根MWNTs/Ni在磁场中的受力情况进行建模分析，实验结果表明：磁场辅助热处理有助于提高MWNTs/Ni在阴极表面的直立分布，提高了MWNTs/Ni的场发射性能.

关键词:

Abstract

The effect of magnetic field assisted heat-treatment on the field emission properties of metalized multi-walled carbon nanotubes (MWNTs) is investigated. The metalized MWNTs are prepared via an electroless plating method, and then the MWNTs/Ni cathodes are fabricated by screen printing. The morphology and composition of MWNTs/Ni were studied by transmission electron microscopy and energy dispersive X-ray detector, and the difference between MWNTs/Ni cathodes heat-treated with or without magnetic field was observed by scanning electron microscopy. The force of a single MWNT coated with Ni was simulated, and the results demonstrate that the magnetic field force could induce the rotation of MWNTs/Ni during magnetic field assisted heat-treatment. The field emission characteristics show that the MWNTs/Ni cathodes heat-treated with magnetic field has a low turn-on field of 0.80 Vm-1 and high field enhancement factor of 16068, which are attributed to the embossment of MWNTs/Ni from substrates under the magnetic field.

Keywords:

field emission /
metalized multi-walled carbon nanotubes /
magnetic field /
electroless plating

作者及机构信息

1.
福州大学物理与信息工程学院, 福州 350002;

2.
电子科技大学电子, 薄膜与集成国家重点实验室, 成都 610054

基金项目: 国家高技术研究发展计划重大专项（批准号：2013AA030601）、国家自然科学基金（批准号：61106053，61101169）和电子薄膜与集成器件国家重点实验室开放基金（批准号：KFJJ201309）资助的课题.

Authors and contacts

1.
College of Physics and Telecommunication Engineering, Fuzhou University, Fuzhou 350002, China;

2.
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Funds: Project supported by the National High Technology Research and Development Program of China (Grant No. 2013AA030601), the National Natural Science Foundation of China (Grant Nos. 61106053, 61101169), and the State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201309).

参考文献

[1]	Iijima S 1991 Nature 354 56
[2]	Hu X Y, Wang S M, Pei Y H, Tian H W, Zhu P W 2013 Acta Phys. Sin. 62 038101 (in Chinese) [胡小颖, 王淑敏, 裴艳慧, 田宏伟, 朱品文 2013 62 038101]
[3]
[4]
[5]	Gu G R, Ito T 2009 Chin. Phys. B 18 4547
[6]	Shrestha S, Choi W C, Song W, Kwon Y T, Shrestha S P, Park C Y 2010 Carbon 48 54
[7]
[8]
[9]	Rakhi R B, Lim X, Gao X, Wang Y, Wee A T S, Sethupathi K, Ramaprabhu S, Sow C H 2010 Appl. Phys. A 98 195
[10]
[11]	Kyung S J, Park J B, Voronko M, Lee J H, Yeom G Y 2007 Carbon 45 649
[12]	Yu J, Chen J, Deng S Z, Xu N S 2011 Appl. Surf. Sci. 258 738
[13]
[14]	Kim Y C, Sohn K H, Cho Y M, Yoo E H 2004 Appl. Phys. Lett. 84 5350
[15]
[16]	Tasi I S, Huang C W, Huang H K, Jehng J M, Pan T C 2008 Journal of SID Shanghai China, March 12-15, 2007 p639
[17]
[18]	Ajiki H, Ando T 1993 J. Phy. Soc. Jpn. 62 2470
[19]
[20]	Anshu S, Balram T, Vijay Y K 2010 J. Mem. Sci. 361 89
[21]
[22]	Fujiwara M, Oki E, Hamada M, Tonimoto Y 2001 J. Phys. Chem. A 105 4383
[23]
[24]	Jang B K, Sakka Y 2009 Mater. Lett. 63 2545
[25]
[26]
[27]	Lee S H, Ma C C M, Yuen S M, Teng C C, Liao S H, Huang Y L, Tsai M C, Su A, Wang I 2011 Thin Solid Films 519 4166
[28]
[29]	Lee S H, Ma C C M, Yuen S M, Teng C C, Yen M Y, Huang Y L, Yu K C 2012 Diamon Related Mater. 25 111
[30]	Zheng L W, Hu L Q, Xiao X J, Yang F, Lin H, Guo T L 2011 Chin. Phys. B 20 128502
[31]
[32]
[33]	Zhou Z Y, Wang Z L, Lin L W 2007 MEMS and Na-notechnology (Vol. 3) (Beijing: Science Press) p486 (in Chinese) [周兆英, 王中林, 林立伟 2007 微系统和纳米技术 (第3卷) (北京: 科学出版社) 第486页]
[34]	Sano N, Naito M, Kikuchi T 2007 Carbon 45 78
[35]
[36]	Liu G L, Yang Z H, Fang G L 2009 Acta Phys. Sin. 58 3364 (in Chinese) [刘贵立, 杨忠华, 方戈亮 2009 58 3364]
[37]
[38]
[39]	Yang C J, Park J I, Cho Y R 2007 Adv. Eng. Mater. 9 88
[40]
[41]	Vink T J, Gillies M, Kriege J C, Laar H W J J 2003 Appl. Phys. Lett. 83 3552
[42]	Ding H, Feng T, Zhang Z J, Wang K, Qian M, Chen Y W, Sun Z 2010 Appl. Surf. Sci. 256 6595
[43]
[44]	Lee H J, Lee Y D, Cho W S, Ju B K 2006 Appl. Phys. Lett. 88 093115
[45]
[46]
[47]	L W H, Zhang S 2012 Acta Phys. Sin. 61 018801 (in Chinese) [吕文辉, 张帅 2012 61 018801]

施引文献

[1]	Iijima S 1991 Nature 354 56
[2]	Hu X Y, Wang S M, Pei Y H, Tian H W, Zhu P W 2013 Acta Phys. Sin. 62 038101 (in Chinese) [胡小颖, 王淑敏, 裴艳慧, 田宏伟, 朱品文 2013 62 038101]
[3]
[4]
[5]	Gu G R, Ito T 2009 Chin. Phys. B 18 4547
[6]	Shrestha S, Choi W C, Song W, Kwon Y T, Shrestha S P, Park C Y 2010 Carbon 48 54
[7]
[8]
[9]	Rakhi R B, Lim X, Gao X, Wang Y, Wee A T S, Sethupathi K, Ramaprabhu S, Sow C H 2010 Appl. Phys. A 98 195
[10]
[11]	Kyung S J, Park J B, Voronko M, Lee J H, Yeom G Y 2007 Carbon 45 649
[12]	Yu J, Chen J, Deng S Z, Xu N S 2011 Appl. Surf. Sci. 258 738
[13]
[14]	Kim Y C, Sohn K H, Cho Y M, Yoo E H 2004 Appl. Phys. Lett. 84 5350
[15]
[16]	Tasi I S, Huang C W, Huang H K, Jehng J M, Pan T C 2008 Journal of SID Shanghai China, March 12-15, 2007 p639
[17]
[18]	Ajiki H, Ando T 1993 J. Phy. Soc. Jpn. 62 2470
[19]
[20]	Anshu S, Balram T, Vijay Y K 2010 J. Mem. Sci. 361 89
[21]
[22]	Fujiwara M, Oki E, Hamada M, Tonimoto Y 2001 J. Phys. Chem. A 105 4383
[23]
[24]	Jang B K, Sakka Y 2009 Mater. Lett. 63 2545
[25]
[26]
[27]	Lee S H, Ma C C M, Yuen S M, Teng C C, Liao S H, Huang Y L, Tsai M C, Su A, Wang I 2011 Thin Solid Films 519 4166
[28]
[29]	Lee S H, Ma C C M, Yuen S M, Teng C C, Yen M Y, Huang Y L, Yu K C 2012 Diamon Related Mater. 25 111
[30]	Zheng L W, Hu L Q, Xiao X J, Yang F, Lin H, Guo T L 2011 Chin. Phys. B 20 128502
[31]
[32]
[33]	Zhou Z Y, Wang Z L, Lin L W 2007 MEMS and Na-notechnology (Vol. 3) (Beijing: Science Press) p486 (in Chinese) [周兆英, 王中林, 林立伟 2007 微系统和纳米技术 (第3卷) (北京: 科学出版社) 第486页]
[34]	Sano N, Naito M, Kikuchi T 2007 Carbon 45 78
[35]
[36]	Liu G L, Yang Z H, Fang G L 2009 Acta Phys. Sin. 58 3364 (in Chinese) [刘贵立, 杨忠华, 方戈亮 2009 58 3364]
[37]
[38]
[39]	Yang C J, Park J I, Cho Y R 2007 Adv. Eng. Mater. 9 88
[40]
[41]	Vink T J, Gillies M, Kriege J C, Laar H W J J 2003 Appl. Phys. Lett. 83 3552
[42]	Ding H, Feng T, Zhang Z J, Wang K, Qian M, Chen Y W, Sun Z 2010 Appl. Surf. Sci. 256 6595
[43]
[44]	Lee H J, Lee Y D, Cho W S, Ju B K 2006 Appl. Phys. Lett. 88 093115
[45]
[46]
[47]	L W H, Zhang S 2012 Acta Phys. Sin. 61 018801 (in Chinese) [吕文辉, 张帅 2012 61 018801]

[1]	杨孟骐, 姬宇航, 梁琦, 王长昊, 张跃飞, 张铭, 王波, 王如志. 四方结构GaN纳米线制备、掺杂调控及其场发射性能研究. , 2020, 69(16): 167805. doi: 10.7498/aps.69.20200445
[2]	陈程程, 刘立英, 王如志, 宋雪梅, 王波, 严辉. 不同基底的GaN纳米薄膜制备及其场发射增强研究. , 2013, 62(17): 177701. doi: 10.7498/aps.62.177701
[3]	胡小颖, 王淑敏, 裴艳慧, 田宏伟, 朱品文. 碳纳米片-碳纳米管复合材料的一步合成及其场发射性质研究. , 2013, 62(3): 038101. doi: 10.7498/aps.62.038101
[4]	吕文辉, 张帅. 接触电阻对碳纳米管场发射的影响. , 2012, 61(1): 018801. doi: 10.7498/aps.61.018801
[5]	张培增, 李瑞山, 谢二庆, 杨华, 王璇, 王涛, 冯有才. 电化学方法制备ZnO纳米颗粒掺杂类金刚石薄膜及其场发射性能研究. , 2012, 61(8): 088101. doi: 10.7498/aps.61.088101
[6]	吴志国, 张鹏举, 徐亮, 李拴魁, 王君, 李旭东, 闫鹏勋. 新型氧化铝模板自组装制备非晶碳纳米点阵列膜及其场发射性能研究. , 2010, 59(1): 438-442. doi: 10.7498/aps.59.438
[7]	杨延宁, 张志勇, 张富春, 张威虎, 闫军锋, 翟春雪. 纳米金刚石的变温场发射. , 2010, 59(4): 2666-2671. doi: 10.7498/aps.59.2666
[8]	王新庆, 李良, 褚宁杰, 金红晓, 葛洪良. 纳米碳管阵列场发射电流密度的理论数值优化. , 2008, 57(11): 7173-7177. doi: 10.7498/aps.57.7173
[9]	秦玉香, 胡明. 钛碳化物改性碳纳米管的场发射性能. , 2008, 57(6): 3698-3702. doi: 10.7498/aps.57.3698
[10]	郑新亮, 李广山, 钟寿仙, 田进寿, 李振红, 任兆玉. 激光烧蚀对碳纳米管薄膜场发射性能的影响. , 2008, 57(12): 7912-7918. doi: 10.7498/aps.57.7912
[11]	孙海军, 梁世东. Peierls相变与磁场中碳纳米管的场发射. , 2008, 57(3): 1930-1934. doi: 10.7498/aps.57.1930
[12]	郭大勃, 元光, 宋翠华, 顾长志, 王强. 碳纳米管的变温场发射. , 2007, 56(10): 6114-6117. doi: 10.7498/aps.56.6114
[13]	胡利勤, 林志贤, 郭太良, 姚亮, 王晶晶, 杨春建, 张永爱, 郑可炉. 取向和非取向In2O3纳米线的场发射研究. , 2006, 55(11): 6136-6140. doi: 10.7498/aps.55.6136
[14]	罗敏, 王新庆, 葛洪良, 王淼, 徐亚伯, 陈强, 李利培, 陈磊, 管高飞, 夏娟, 江丰. 排列形状及阵列数目对纳米导线阵列场发射性能的影响. , 2006, 55(11): 6061-6067. doi: 10.7498/aps.55.6061
[15]	李强, 梁二军. 碳、碳氮和硼碳氮纳米管场发射性能的比较研究. , 2005, 54(12): 5931-5936. doi: 10.7498/aps.54.5931
[16]	王新庆, 王淼, 李振华, 杨兵, 王凤飞, 何丕模, 徐亚伯. 单根纳米导线场发射增强因子的计算. , 2005, 54(3): 1347-1351. doi: 10.7498/aps.54.1347
[17]	李海钧, 顾长志, 窦艳, 李俊杰. 单根准直碳纳米纤维的场发射特性. , 2004, 53(7): 2258-2262. doi: 10.7498/aps.53.2258
[18]	宋教花, 张耿民, 张兆祥, 孙明岩, 薛增泉. 多壁碳纳米管阵列场发射研究. , 2004, 53(12): 4392-4397. doi: 10.7498/aps.53.4392
[19]	张兆祥, 张耿民, 侯士敏, 张浩, 顾镇南, 刘惟敏, 赵兴钰, 薛增泉. 利用场发射显微镜研究O2对单壁碳纳米管场发射的影响. , 2003, 52(5): 1282-1286. doi: 10.7498/aps.52.1282
[20]	孙建平, 张兆祥, 侯士敏, 赵兴钰, 施祖进, 顾镇南, 刘惟敏, 薛增泉. 用场发射显微镜研究单壁碳纳米管场发射. , 2001, 50(9): 1805-1809. doi: 10.7498/aps.50.1805

计量

文章访问数: 6397
PDF下载量: 514
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板