Electron collision cross section data in plasma etching modeling

Chen Jin-Feng; Zhu Lin-Fan

doi:10.7498/aps.73.20231598

Abstract

Semiconductor chips are the cornerstone of the information age, which play a vital role in the rapid development of emerging technologies such as big data, machine learning, and artificial intelligence. Driven by the growing demand for computing power, the chip manufacturing industry has been committed to pursuing higher level of integration and smaller device volumes. As a critical step in the chip manufacturing processes, the etching process therefore faces great challenges. Dry etching (or plasma etching) process based on the low-temperature plasma science and technology is the preferred solution for etching the high-precision circuit pattern. In the low-temperature plasma, electrons obtain energy from the external electromagnetic field and transfer the energy to other particles through collision process. After a series of complex physical and chemical reactions, a large number of active particles such as electrons, ions, atoms and molecules in excited states, and radicals are finally generated, providing the material conditions for etching the substrate. Dry etching chamber is a nonlinear system with multiple space-time dimensions, multiple reaction levels and high complexity. Facing such a complex system, only by fully understanding the basic physical and chemical reaction of the etching process can we optimize the process parameters and improve the etching conditions, so as to achieve precision machining of the semiconductor and meet the growing demand of the chip industry for etching rate and yield. In the early days, the process conditions of dry etching were determined through the trial-and-error method, which is characterized by high cost and low yield. However, with the help of plasma simulation, nowadays people have been able to narrow the scope of experiment to a large extent, and find out efficiently the optimal process conditions in a large number of parameters. In this review, we first introduce the basic theory of the mostly used models for plasma simulation including kinetic, fluid dynamic, hybrid and global models, in which the electron collision cross sections are the key input parameters. Since the formation of the low-temperature plasma is driven by the electron-heavy particle collision processes, and the active species for plasma etching are generated in the reactions induced by electron impact, the accuracy and completeness of the cross-section data greatly affect the reliability of the simulation results. Then, the theoretical and experimental methods of obtaining the cross-section data of etching gases are summarized. Finally, the research status of the electron collision cross sections of etching atoms and molecules is summarized, and the future research prospect is discussed.

Keywords:

Authors and contacts

Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China

Corresponding author: Zhu Lin-Fan, lfzhu@ustc.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 12334010).

FullText HTML : translate this paragraph

References

[1]	张汝京等 2017 纳米集成电路制造工艺(第二版) (北京: 清华大学出版社) Zhang R J, et al. 2017 Nanoscale Integrated Circuits — The Manufacturing Process (2nd Ed.) (Beijing: Tsinghua University Press
[2]	张海洋等 2018 等离子体蚀刻及其在大规模集成电路制造中的应用 (北京: 清华大学出版社) Zhang H Y, et al. 2018 Plasma Etching and its Application in Large Scale Integrated Circuit Manufacturing (Beijing: Tsinghua University Press
[3]	Oehrlein G S 1986 Phys. Today 39 26 Google Scholar
[4]	Manos D M, Flamm D L 1989 Plasma Etching: An Introduction (San Diego: Academic Press
[5]	Moore G E 1965 Electronics 38 114 Google Scholar
[6]	Bondur J A 1976 J. Vac. Sci. Technol. 13 1023 Google Scholar
[7]	Jansen H, Gardeniers H, de Boer M, Elwenspoek M, Fluitman J 1996 J. Micromech. Microeng. 6 14 Google Scholar
[8]	Posseme N 2017 Plasma Etching Processes for CMOS Devices Realization (London: ISTE Press
[9]	Kambara M, Kawaguchi S, Lee H J, Ikuse K, Hamaguchi S, Ohmori T, Ishikawa K 2023 Jpn. J. Appl. Phys. 62 SA0803 Google Scholar
[10]	Capps N E, Mackie N M, Fisher E R 1998 J. Appl. Phys. 84 4736 Google Scholar
[11]	Cardinaud C 2018 C. R. Chim. 21 723 Google Scholar
[12]	Efremov A, Lee B J, Kwon K H 2021 Materials 14 1432 Google Scholar
[13]	Wang D H, Wang S X, Nie Z W, Wang L H, Xu Y C, Du X J, Zhu L F 2022 Plasma Sources Sci. Technol. 31 045012 Google Scholar
[14]	Capitelli M, Bardsley J N 1990 Nonequilibrium Processes in Partially Ionized Gases (New York: Plenum Press) pp283–290
[15]	National Research Council 1996 Database Needs for Modeling and Simulation of Plasma Processing (Washington, D.C.: National Academies Press
[16]	Huo W M, Kim Y K 1999 IEEE Trans. Plasma Sci. 27 1225 Google Scholar
[17]	Kline L E, Kushner M J 1989 Crit. Rev. Solid State Mater. Sci. 16 1 Google Scholar
[18]	Sommerer T J, Kushner M J 1992 J. Appl. Phys. 71 1654 Google Scholar
[19]	Lymberopoulos D P, Economou D J 1995 J. Res. Nat. Inst. Stand. Technol. 100 473 Google Scholar
[20]	Li M, Wu H M, Chen Y 1995 IEEE Trans. Plasma Sci. 23 558 Google Scholar
[21]	Kushner M J, Collison W Z, Grapperhaus M J, Holland J P, Barnes M S 1996 J. Appl. Phys. 80 1337 Google Scholar
[22]	Wu H M, Yu B W, Li M, Yang Y 1997 IEEE Trans. Plasma Sci. 25 1 Google Scholar
[23]	Tago K, Kazumi H, Kobayashi K 1998 J. Alloys Compd. 279 60 Google Scholar
[24]	Morgan W L 2000 Adv. At. Mol. Opt. Phys. 43 79 Google Scholar
[25]	Mason N J 2009 J. Phys. D: Appl. Phys. 42 194003 Google Scholar
[26]	Bartschat K, Kushner M J 2016 Proc. Natl. Acad. Sci. U. S. A. 113 7026 Google Scholar
[27]	Carbone E, Graef W, Hagelaar G, Boer D, Hopkins M M, Stephens J C, Yee B T, Pancheshnyi S, van Dijk J, Pitchford L 2021 Atoms 9 16 Google Scholar
[28]	Sakai Y 2002 Appl. Surf. Sci. 192 327 Google Scholar
[29]	Morgan W L 1992 Plasma Chem. Plasma Process. 12 449 Google Scholar
[30]	Morgan W L 1992 Plasma Chem. Plasma Process. 12 477 Google Scholar
[31]	Christophorou L G, Olthoff J K 2001 Adv. At. Mol. Opt. Phys. 44 59 Google Scholar
[32]	Christophorou L G, Olthoff J K 2002 Appl. Surf. Sci. 192 309 Google Scholar
[33]	Pitchford L C, Alves L L, Bartschat K, Biagi S F, Bordage M C, Phelps A V, Ferreira C M, Hagelaar G J M, Morgan W L, Pancheshnyi S, Puech V, Stauffer A, Zatsarinny O 2013 J. Phys. D: Appl. Phys. 46 334001 Google Scholar
[34]	Alves L L, Bartschat K, Biagi S F, Bordage M C, Pitchford L C, Ferreira C M, Hagelaar G J M, Morgan W L, Pancheshnyi S, Phelps A V, Puech V, Zatsarinny O 2013 J. Phys. D: Appl. Phys. 46 334002 Google Scholar
[35]	Bordage M C, Biagi S F, Alves L L, Bartschat K, Chowdhury S, Pitchford L C, Hagelaar G J M, Morgan W L, Puech V, Zatsarinny O 2013 J. Phys. D: Appl. Phys. 46 334003 Google Scholar
[36]	Kawaguchi S, Satoh K, Itoh H 2015 Jpn. J. Appl. Phys. 54 01AC01 Google Scholar
[37]	Alves L L, Coche P, Ridenti M A, Guerra V 2016 Eur. Phys. J. D 70 124 Google Scholar
[38]	Bartschat K, Tennyson J, Zatsarinny O 2017 Plasma Processes Polym. 14 1600093 Google Scholar
[39]	Xu Y C, Du X J, Li T J, Wang L H, Ma Z R, Zhu L F 2020 Plasma Sources Sci. Technol. 29 085005 Google Scholar
[40]	Gupta D 2020 Appl. Sci. Converg. Technol. 29 125 Google Scholar
[41]	Sun Q, Wang S X, Xu Y C, Ma K, Wang L H, Li T J, Zhu L F 2022 J. Electron Spectrosc. Relat. Phenom. 258 147218 Google Scholar
[42]	Colonna G, D’Angola A 2022 Plasma Modeling Methods and Applications (2nd Ed.) (London: IOP Publishing
[43]	Alves L L, Bogaerts A, Guerra V, Turner M M 2018 Plasma Sources Sci. Technol. 27 023002 Google Scholar
[44]	Hurlbatt A, Gibson A R, Schröter S, Bredin J, Foote A P S, Grondein P, O’Connell D, Gans T 2017 Plasma Processes Polym. 14 1600138 Google Scholar
[45]	Hagelaar G J M, Pitchford L C 2005 Plasma Sources Sci. Technol. 14 722 Google Scholar
[46]	Petrović Z Lj, Dujko S, Marić D, Malović G, Nikitović Ž, Šašić O, Jovanović J, Stojanović V, Radmilović-Radenović M 2009 J. Phys. D: Appl. Phys. 42 194002 Google Scholar
[47]	Surendra M, Graves D B, Jellum G M 1990 Phys. Rev. A 41 1112 Google Scholar
[48]	Janssen J F J, Pitchford L C, Hagelaar G J M, van Dijk J 2016 Plasma Sources Sci. Technol. 25 055026 Google Scholar
[49]	Kolobov V I, Arslanbekov R R 2006 IEEE Trans. Plasma Sci. 34 895 Google Scholar
[50]	Kolobov V I, Arslanbekov R R 2012 J. Comput. Phys. 231 839 Google Scholar
[51]	Arslanbekov R R, Kolobov V I, Frolova A A 2013 Phys. Rev. E 88 063301 Google Scholar
[52]	Birdsall C K 1991 IEEE Trans. Plasma Sci. 19 65 Google Scholar
[53]	Vahedi V, Surendra M 1995 Comput. Phys. Commun. 87 179 Google Scholar
[54]	Longo S 2000 Plasma Sources Sci. Technol. 9 468 Google Scholar
[55]	Nanbu K 2000 IEEE Trans. Plasma Sci. 28 971 Google Scholar
[56]	Toneli D A, Pessoa R S, Roberto M, Gudmundsson J T 2019 Plasma Sources Sci. Technol. 28 025007 Google Scholar
[57]	Kushner M J 2009 J. Phys. D: Appl. Phys. 42 194013 Google Scholar
[58]	LXCat: Plasma Data Exchange Project Database (http:// fr.lxcat.net/home/) [2023-10-5]
[59]	Tejero-del-Caz A, Guerra V, Gonçalves D, Lino da Silva M, Marques L, Pinhão N, Pintassilgo C D, Alves L L 2019 Plasma Sources Sci. Technol. 28 043001 Google Scholar
[60]	COMSOL MULTIPHYSICS (http://cn.comsol.com/) [2023-10-5]
[61]	Chutjian A, Garscaddenb A, Wadehra J M 1996 Phys. Rep. 264 393 Google Scholar
[62]	Fabrikant I I, Eden S, Mason N J, Fedor J 2017 Adv. At. Mol. Opt. Phys. 66 545 Google Scholar
[63]	Pshenichnyuk S A, Asfandiarov N L, Vorob’ev A S, Matejčík Š 2022 Phys. Usp. 65 163 Google Scholar
[64]	Underwood-Lemons T, Gergel T J, Moore J H 1995 J. Chem. Phys. 102 119 Google Scholar
[65]	Christophorou L G, Olthoff J K 2001 Int. J. Mass Spectrom. 205 27 Google Scholar
[66]	Fedor J, May O, Allan M 2008 Phys. Rev. A 78 032701 Google Scholar
[67]	Bose D, Rao M, Govindan T R, Meyyappan M 2003 Plasma Sources Sci. Technol. 12 225 Google Scholar
[68]	Zatsarinny O, Bartschat K 2013 J. Phys. B: At. Mol. Opt. Phys. 46 112001 Google Scholar
[69]	Takatsuka K, McKoy V 1981 Phys. Rev. A 24 2473 Google Scholar
[70]	Schneider B I, Rescigno T N 1988 Phys. Rev. A 37 3749 Google Scholar
[71]	Zammit M C, Fursa D V, Savage J S, Bray I 2017 J. Phys. B: At. Mol. Opt. Phys. 50 123001 Google Scholar
[72]	Antony B K, Joshipura K N, Mason N J 2005 J. Phys. B: At. Mol. Opt. Phys. 38 189 Google Scholar
[73]	Kim Y K 2001 Phys. Rev. A 64 032713 Google Scholar
[74]	Kim Y K, Rudd M E 1994 Phys. Rev. A 50 3954 Google Scholar
[75]	Tanaka H, Brunger M J, Campbell L, Kato H, Hoshino M, Rau A R P 2016 Rev. Mod. Phys. 88 025004 Google Scholar
[76]	Bartschat K 2013 J. Phys. D: Appl. Phys. 46 334004 Google Scholar
[77]	de Urquijo J, Arriaga C A, Cisneros C, Alvarez I 1999 J. Phys. D: Appl. Phys. 32 41 Google Scholar
[78]	Liu X J, Zhu L F, Jiang X M, Yuan Z S, Cai B, Chen X J, Xu K Z 2001 Rev. Sci. Instrum. 72 3357 Google Scholar
[79]	Fuss M C, Sanz A G, Blanco F, Oller J C, Limão-Vieira P, Brunger M J, García G 2013 Phys. Rev. A 88 042702 Google Scholar
[80]	Lozano A I, Oller J C, Krupa K, Ferreira da Silva F, Limão-Vieira P, Blanco F, Muñoz A, Colmenares R, García G 2018 Rev. Sci. Instrum. 89 063105 Google Scholar
[81]	Traoré Dubuis A, Costa F, Ferreira da Silva F, Limão-Vieira P, Oller J C, Blanco F, García G 2018 Chem. Phys. Lett. 699 182 Google Scholar
[82]	Costa F, Álvarez L, Lozano A I, Blanco F, Oller J C, Muñoz A, Souza Barbosa A, Bettega M H F, Ferreira da Silva F, Limão-Vieira P, White R D, Brunger M J, García G 2019 J. Chem. Phys. 151 084310 Google Scholar
[83]	Sullivan J P, Gilbert S J, Marler J P, Greaves R G, Buckman S J, Surko C M 2002 Phys. Rev. A 66 042708 Google Scholar
[84]	Mann A, Linder F 1992 J. Phys. B: At. Mol. Opt. Phys. 25 533 Google Scholar
[85]	Boesten L, Tanaka H, Kobayashi H, Dillon M A, Kimura M 1992 J. Phys. B: At. Mol. Opt. Phys. 25 1607 Google Scholar
[86]	Gauf A, Navarro C, Balch G, Hargreaves L R, Khakoo A, Winstead C, McKoy V 2013 Phys. Rev. A 87 012710 Google Scholar
[87]	Read F H, Channing J M 1996 Rev. Sci. Instrum. 67 2372 Google Scholar
[88]	Allan M 2004 Phys. Scr. 2004 161 Google Scholar
[89]	Gote M, Ehrhardt H 1995 J. Phys. B: At. Mol. Opt. Phys. 28 3957 Google Scholar
[90]	Mann A, Linder F 1992 J. Phys. B: At. Mol. Opt. Phys. 25 545 Google Scholar
[91]	Inokuti M 1971 Rev. Mod. Phys. 43 297 Google Scholar
[92]	Kim Y K 2007 J. Chem. Phys. 126 064305 Google Scholar
[93]	Wang S X, Zhu L F 2022 Chin. Phys. B 31 083401 Google Scholar
[94]	Zhong Z P, Feng R F, Xu K Z, Wu S L, Zhu L F, Zhang X J, Ji Q, Shi Q C 1997 Phys. Rev. A 55 1799 Google Scholar
[95]	Lassettre E N, Skerbele A 1971 J. Chem. Phys. 54 1597 Google Scholar
[96]	Zobel J, Mayer U, Jung K, Ehrhardt H 1996 J. Phys. B: At. Mol. Opt. Phys. 29 813 Google Scholar
[97]	Zetner P W, Kanik I, Trajmar S 1998 J. Phys. B: At. Mol. Opt. Phys. 31 2395 Google Scholar
[98]	Kato H, Kawahara H, Hoshino M, Tanaka H, Brunger M J, Kim Y K 2007 J. Chem. Phys. 126 064307 Google Scholar
[99]	Li H H, Wang S X, Zhu J H, Nie Z W, Chen J F, Wang L H, Ma W L, Zhu L F 2023 Plasma Sources Sci. Technol. 32 065011 Google Scholar
[100]	Goto M, Nakamura K, Toyoda H, Sugai H 1994 Jpn. J. Appl. Phys. 33 3602 Google Scholar
[101]	Sugai H, Toyoda H, Nakano T, Goto M 1995 Contrib. Plasma Phys. 35 415 Google Scholar
[102]	Morgan W L, Winstead C, McKoy V 2001 J. Appl. Phys. 90 2009 Google Scholar
[103]	Schülke W 2007 Electron Dynamics by Inelastic X-ray Scattering (Oxford: Oxford University Press
[104]	Xie B P, Zhu L F, Yang K, Zhou B, Hiraoka N, Cai Y Q, Yao Y, Wu C Q, Wang E L, Feng D L 2010 Phys. Rev. A 82 032501 Google Scholar
[105]	Zhu L F, Wang L S, Xie B P, Yang K, Hiraoka N, Cai Y Q, Feng D L 2011 J. Phys. B: At. Mol. Opt. Phys. 44 025203 Google Scholar
[106]	Mochizuki Y, Murai H, Kato H, Hoshino M, Tanaka H 2015 J. Phys. Conf. Ser. 635 052048 Google Scholar
[107]	Khakoo M A, Vandeventer P, Childers J G, Kanik I, Fontes C J, Bartschat K, Zeman V, Madison D H, Saxena S, Srivastava R, Stauffer A D 2004 J. Phys. B: At. Mol. Opt. Phys. 37 247 Google Scholar
[108]	Filipović D M, Marinković B P, Pejčev V, Vušković L 2000 J. Phys. B: At. Mol. Opt. Phys. 33 2081 Google Scholar
[109]	Filipović D M, Marinković B P, Pejčev V, Vušković L 2000 J. Phys. B: At. Mol. Opt. Phys. 33 677 Google Scholar
[110]	Chutjian A, Cartwright D C 1981 Phys. Rev. A 23 2178 Google Scholar
[111]	Bull J N, Bart M, Vallance C, Harland P W 2013 Phys. Rev. A 88 062710 Google Scholar
[112]	Karwasz G P, Możejko P, Song M Y 2014 Int. J. Mass Spectrom. 365–366 232 Google Scholar
[113]	Makochekanwa C, Oguri K, Suzuki R, Ishihara T, Hoshino M, Kimura M, Tanaka H 2006 Phys. Rev. A 74 042704 Google Scholar
[114]	Motlagh S, Moore J H 1998 J. Chem. Phys. 109 432 Google Scholar
[115]	Winters H F 1975 J. Chem. Phys. 63 3462 Google Scholar
[116]	Winters H F, Inokuti M 1982 Phys. Rev. A 25 1420 Google Scholar
[117]	Flaherty D W, Kasper M A, Baio J E, Graves D B, Winters H F, Winstead C, McKoy V 2006 J. Phys. D: Appl. Phys. 39 4393 Google Scholar
[118]	Ullrich J, Moshammer R, Dorn A, Dörner R, Schmidt L P H, Schmidt-Böcking H 2003 Rep. Prog. Phys. 66 1463 Google Scholar
[119]	Eppink A T J B, Parker D H 1997 Rev. Sci. Instrum. 68 3477 Google Scholar
[120]	Zhao Y R, Chen J J, Luo Z J, Chang Y, Yang J Y, Zhang W Q, Wu G R, Crane S W, Hansen C S, Ding H B, An F, Hu X X, Xie D Q, Ashfold M N R, Yuan K J, Yang X M 2023 Chem. Sci. 14 2501 Google Scholar
[121]	Adamovich I, Agarwal S, Ahedo E, Alves L L, Baalrud S, Babaeva N, Bogaerts A, Bourdon A, Bruggeman P J, Canal C, Choi E H, Coulombe S, Donkó Z, Graves D B, Hamaguchi S, Hegemann D, Hori M, Kim H H, Kroesen G M W, Kushner M J, Laricchiuta A, Li X, Magin T E, Mededovic Thagard S, Miller V, Murphy A B, Oehrlein G S, Puac N, Sankaran R M, Samukawa S, Shiratani M, Šimek M, Tarasenko N, Terashima K, Thomas Jr E, Trieschmann J, Tsikata S, Turner M M, van der Walt I J, van de Sanden M C M, von Woedtke T 2022 J. Phys. D: Appl. Phys. 55 373001 Google Scholar

Cited By

图 1 湿法刻蚀(各向同性)与干法刻蚀(各向异性)示意图

Figure 1. Schematic diagram of wet etching (isotropic) and dry etching (anisotropic).

DownLoad: Full-Size Img PowerPoint

图 2 (a)以CHF₃为原料气体的ICP刻蚀腔室(作图参考了文献[12]), 匹配器用于匹配电源输出阻抗与等离子体阻抗, 红色与蓝色线条分别代表磁场与电场, 鞘层区域的偏压可以将离子加速到几百eV, 高能离子垂直轰击表面导致各向异性刻蚀. 使用两个射频源, 可实现离子密度与能量的去耦合: 上方电源通过电感耦合供能, 可以控制离子密度; 下方电源通过电容耦合调节鞘层偏压, 可以控制离子的轰击能量; (b) 表面刻蚀部分, C_mF_n聚合物的钝化效应有助于各向异性刻蚀; (c) 等离子体内部及晶圆表面发生的主要物理化学过程

Figure 2. (a) ICP etching chamber with CHF₃ as feed gas (this picture was made with reference to Ref. [12]), the matching device is used to match the output impedance of the power supply and the plasma impedance, the red and blue lines represent the magnetic and electric fields respectively, the bias voltage in the sheath region can accelerate the ions to several hundred eV, and the high energy ions can vertically bombard the surface, leading to anisotropic etching. Using two RF sources, the decoupling of the ion density and energy can be achieved: the upper power supply can control the ion density through inductive coupling; the lower power supply can control the ion bombardment energy by adjusting the sheath bias through capacitive coupling. (b) The surface etching part, the passivation effect of C_mF_n polymer contributes to anisotropic etching. (c) The main physical and chemical processes that occur inside the plasma and on the wafer surface.

DownLoad: Full-Size Img PowerPoint

图 3 干法刻蚀系统与各部分对应的处理模块, 各个模块的理论模型见文献[42,43]

Figure 3. Dry etching system and the processing modules corresponding to each part, theoretical models of each module can be found in Refs. [42,43].

DownLoad: Full-Size Img PowerPoint

图 4 电子与粒子s的两体碰撞示意图, 粒子s可视为静止. 右图为左图的逆过程

Figure 4. Diagram of binary encounter between an electron and a particle s which can be regarded as stationary. The right picture is the inverse process of the left picture.

DownLoad: Full-Size Img PowerPoint

图 5 电子与双原子分子AB相互作用的初级过程①与次级过程②, 原子或多原子分子的情况是类似的. 注意到②中产生的处于激发态的原子分子或离子还会进一步演化

Figure 5. Primary process ① and secondary process ② of electron interaction with diatomic molecule AB, and the interaction processes for atoms or polyatomic molecules are similar. Note that the excited atoms, molecules, and ions produced in ② will evolve further.

DownLoad: Full-Size Img PowerPoint

图 6 双原子分子AB的电子碰撞中性解离的两步过程示意图. 处于基态的分子AB首先被激发到解离态AB*, 随后沿着激发态势能曲线解离生成A*+B. 图示表明了次级过程的演化与初级过程无关, 只与原子分子所处激发态的性质(势能曲线)有关

Figure 6. Schematic diagram of the two-step processes of electron-impact neutral dissociation of diatomic molecule AB. AB in the ground state is first excited to the dissociative state AB*, and then dissociates along the potential curve to form A*+B. The diagram indicates that the evolution of the secondary process is independent of the primary process, which is only related to the properties of the corresponding excited states (e. g. the potential curve).

DownLoad: Full-Size Img PowerPoint

图 7 电子群实验(脉冲汤森装置)示意图^[46,77]. 被激光照射后, 阴极放出的电子在电场作用下向阳极漂移, 与背景气体碰撞发生贴附、激发、电离等过程. 产生的电流(包括电子电流和离子电流)由探测电路监控, 背景气体的气压则由气压计检测

Figure 7. Schematic diagram of swarm experiment (pulsed Townsend apparatus)^[46,77]. The electrons released by photoemission drift towards the anode under the electric field, and the collision with the background gas leads to attachment, excitation, ionization, etc. The generated currents (including electronic current and ion current) are monitored by the detection circuit, and the pressure of the background gas is detected by the manometer.

DownLoad: Full-Size Img PowerPoint

图 8 典型的电子束散射实验装置: 高分辨快电子能量损失谱仪^[78]. 由电子枪发出的电子被静电半球单色器单色后在反应腔室中与样品气体碰撞(交叉束布局), 散射电子经过静电半球能量分析器后被位置灵敏探测器探测. 转动分析器可改变测量的散射角. 透镜(F, L)、偏转板(Q)、膜孔(P)等电子光学器件用于电子束的聚焦、准直、加(减)速与监测. 图中还展示了用于测量正、负离子的飞行时间质谱

Figure 8. A typical apparatus for electron beam scattering experiment: high-resolution fast electron energy loss spectrometer^[78]. The electrons emitted by the electron gun are monochromized by the electrostatic hemispherical monochromator and then collide with the sample gas in the reaction chamber (cross-beam layout), and the scattered electrons are detected by a position sensitive detector after passing through the electrostatic hemispherical energy analyzer. The measured scattering angle can be varied by rotating the analyzer. Electron optics such as lens (F, L), deflection plate (Q), and aperture (P) are used for focusing, collimating, acceleration (deceleration) and monitoring of the electron beam. Time-of-flight mass spectrometers used to measure positive and negative ions are also shown.

DownLoad: Full-Size Img PowerPoint

图 9 CO分子A¹Π电子激发态不同振动能级的积分截面. *由文献[94]中测量的GOS计算得到. 可以看到, 虽然Born积分截面(虚线)在低能区比积分0°—180°微分散射截面得到的实验值(点)^[95–98]大很多, 但是BE-scaled积分截面(实线)与实验值符合得很好

Figure 9. Integral cross sections of the vibrational states of A¹Π in carbon monoxide. * calculated from the GOSs reported in Ref. [94]. It can be seen that although the Born cross sections (dashed line) at the low energy region are much larger than the experimental values obtained by integrating the differential cross sections in the region of 0°–180° (dots)^[95–98], the BE-scaled integral cross sections (solid line) agree very well with the experimental values.

DownLoad: Full-Size Img PowerPoint

图 10 CHF₃总中性解离截面的测量结果^[13]. Sugai 等^[101] 重新标定了他们之前的测量结果^[100], 由于测量仅考虑了中性碎片CF_x (x = 1—3), 加入了解离到CHF₂和CHF的贡献进行修正

Figure 10. Measured total dissociation cross sections into neutral species for CHF₃^[13]. Sugai et al.^[101] recalibrated their previous experimental results^[100]. Since their measurement only considered neutral fragments CF_x (x = 1–3), the contributions of dissociation to CHF₂ and CHF were added for correction.

DownLoad: Full-Size Img PowerPoint

图 11 Ar原子4s[3/2]₁, 4s′[1/2]₁激发态的积分截面^[93]. 数据点是低(中)能电子碰撞的实验结果^[106–110]. 阴影区代表了BE-scaled积分截面(黑色实线)15%的实验误差^[93], 其他曲线来自LXCat数据库^[27,58]

Figure 11. Integral cross sections for the 4s[3/2]₁ and 4s′[1/2]₁ states of Ar^[93]. Dots are the experimental results measured by low (medium) energy electron impact^[106–110]. The shaded areas indicate an experimental uncertainty of 15% of the BE-scaled integral cross sections (black solid lines)^[93]. The other lines are the data from the LXCat database^[27,58].

DownLoad: Full-Size Img PowerPoint

表 1 常用刻蚀气体. 等离子体刻蚀建模涉及的对象包含表格中的刻蚀气体本身、相应的解离碎片以及处于亚稳态的原子分子.

Table 1. Commonly used etching gases. The objects involved in plasma etching modeling include the etching gases in the table, the corresponding dissociation fragments, and the atoms and molecules in metastable states.

刻蚀气体	举例
氟碳化合物	CF₄, CHF₃, CH₂F₂, CH₃F, C₂F₆, C₃F₈, C₄F₈, C₄F₆······
含氟分子	NF₃, SF₆, SiF₄, CCl₂F₂······
含氯与含溴分子	HBr, Cl₂, BCl₃······
含氢分子	H₂, CH₄······
附加气体	O₂, N₂, Ar, He······

DownLoad: CSV

表 2 等离子体刻蚀建模所需的电子碰撞截面类型. 表格中的截面描述了低温等离子体中主要的电子碰撞过程

Table 2. Types of electron collision cross sections required for plasma etching modeling. The cross sections in the table describe the main electron collision processes in low temperature plasma.

建模所需截面类型	备注
总截面	与电子输运系数相关
弹性/动量转移截面	与电子输运系数相关
转动/振动激发截面	转动激发能量低, 可包含在弹性截面中; 振动亚稳态可以是多步解离(电离)的中间态
电子态激发截面	刻蚀分子的电子激发态常常是解离态
解离截面	解离产物具有刻蚀活性
电离截面	电子、正离子产生过程
电子贴附截面	电子损失过程、负离子产生过程
中性解离/电离解离/ 贴附解离截面	解离为中性/正离子/负离子碎片

DownLoad: CSV

map

[1]	张汝京等 2017 纳米集成电路制造工艺(第二版) (北京: 清华大学出版社) Zhang R J, et al. 2017 Nanoscale Integrated Circuits — The Manufacturing Process (2nd Ed.) (Beijing: Tsinghua University Press
[2]	张海洋等 2018 等离子体蚀刻及其在大规模集成电路制造中的应用 (北京: 清华大学出版社) Zhang H Y, et al. 2018 Plasma Etching and its Application in Large Scale Integrated Circuit Manufacturing (Beijing: Tsinghua University Press
[3]	Oehrlein G S 1986 Phys. Today 39 26 Google Scholar
[4]	Manos D M, Flamm D L 1989 Plasma Etching: An Introduction (San Diego: Academic Press
[5]	Moore G E 1965 Electronics 38 114 Google Scholar
[6]	Bondur J A 1976 J. Vac. Sci. Technol. 13 1023 Google Scholar
[7]	Jansen H, Gardeniers H, de Boer M, Elwenspoek M, Fluitman J 1996 J. Micromech. Microeng. 6 14 Google Scholar
[8]	Posseme N 2017 Plasma Etching Processes for CMOS Devices Realization (London: ISTE Press
[9]	Kambara M, Kawaguchi S, Lee H J, Ikuse K, Hamaguchi S, Ohmori T, Ishikawa K 2023 Jpn. J. Appl. Phys. 62 SA0803 Google Scholar
[10]	Capps N E, Mackie N M, Fisher E R 1998 J. Appl. Phys. 84 4736 Google Scholar
[11]	Cardinaud C 2018 C. R. Chim. 21 723 Google Scholar
[12]	Efremov A, Lee B J, Kwon K H 2021 Materials 14 1432 Google Scholar
[13]	Wang D H, Wang S X, Nie Z W, Wang L H, Xu Y C, Du X J, Zhu L F 2022 Plasma Sources Sci. Technol. 31 045012 Google Scholar
[14]	Capitelli M, Bardsley J N 1990 Nonequilibrium Processes in Partially Ionized Gases (New York: Plenum Press) pp283–290
[15]	National Research Council 1996 Database Needs for Modeling and Simulation of Plasma Processing (Washington, D.C.: National Academies Press
[16]	Huo W M, Kim Y K 1999 IEEE Trans. Plasma Sci. 27 1225 Google Scholar
[17]	Kline L E, Kushner M J 1989 Crit. Rev. Solid State Mater. Sci. 16 1 Google Scholar
[18]	Sommerer T J, Kushner M J 1992 J. Appl. Phys. 71 1654 Google Scholar
[19]	Lymberopoulos D P, Economou D J 1995 J. Res. Nat. Inst. Stand. Technol. 100 473 Google Scholar
[20]	Li M, Wu H M, Chen Y 1995 IEEE Trans. Plasma Sci. 23 558 Google Scholar
[21]	Kushner M J, Collison W Z, Grapperhaus M J, Holland J P, Barnes M S 1996 J. Appl. Phys. 80 1337 Google Scholar
[22]	Wu H M, Yu B W, Li M, Yang Y 1997 IEEE Trans. Plasma Sci. 25 1 Google Scholar
[23]	Tago K, Kazumi H, Kobayashi K 1998 J. Alloys Compd. 279 60 Google Scholar
[24]	Morgan W L 2000 Adv. At. Mol. Opt. Phys. 43 79 Google Scholar
[25]	Mason N J 2009 J. Phys. D: Appl. Phys. 42 194003 Google Scholar
[26]	Bartschat K, Kushner M J 2016 Proc. Natl. Acad. Sci. U. S. A. 113 7026 Google Scholar
[27]	Carbone E, Graef W, Hagelaar G, Boer D, Hopkins M M, Stephens J C, Yee B T, Pancheshnyi S, van Dijk J, Pitchford L 2021 Atoms 9 16 Google Scholar
[28]	Sakai Y 2002 Appl. Surf. Sci. 192 327 Google Scholar
[29]	Morgan W L 1992 Plasma Chem. Plasma Process. 12 449 Google Scholar
[30]	Morgan W L 1992 Plasma Chem. Plasma Process. 12 477 Google Scholar
[31]	Christophorou L G, Olthoff J K 2001 Adv. At. Mol. Opt. Phys. 44 59 Google Scholar
[32]	Christophorou L G, Olthoff J K 2002 Appl. Surf. Sci. 192 309 Google Scholar
[33]	Pitchford L C, Alves L L, Bartschat K, Biagi S F, Bordage M C, Phelps A V, Ferreira C M, Hagelaar G J M, Morgan W L, Pancheshnyi S, Puech V, Stauffer A, Zatsarinny O 2013 J. Phys. D: Appl. Phys. 46 334001 Google Scholar
[34]	Alves L L, Bartschat K, Biagi S F, Bordage M C, Pitchford L C, Ferreira C M, Hagelaar G J M, Morgan W L, Pancheshnyi S, Phelps A V, Puech V, Zatsarinny O 2013 J. Phys. D: Appl. Phys. 46 334002 Google Scholar
[35]	Bordage M C, Biagi S F, Alves L L, Bartschat K, Chowdhury S, Pitchford L C, Hagelaar G J M, Morgan W L, Puech V, Zatsarinny O 2013 J. Phys. D: Appl. Phys. 46 334003 Google Scholar
[36]	Kawaguchi S, Satoh K, Itoh H 2015 Jpn. J. Appl. Phys. 54 01AC01 Google Scholar
[37]	Alves L L, Coche P, Ridenti M A, Guerra V 2016 Eur. Phys. J. D 70 124 Google Scholar
[38]	Bartschat K, Tennyson J, Zatsarinny O 2017 Plasma Processes Polym. 14 1600093 Google Scholar
[39]	Xu Y C, Du X J, Li T J, Wang L H, Ma Z R, Zhu L F 2020 Plasma Sources Sci. Technol. 29 085005 Google Scholar
[40]	Gupta D 2020 Appl. Sci. Converg. Technol. 29 125 Google Scholar
[41]	Sun Q, Wang S X, Xu Y C, Ma K, Wang L H, Li T J, Zhu L F 2022 J. Electron Spectrosc. Relat. Phenom. 258 147218 Google Scholar
[42]	Colonna G, D’Angola A 2022 Plasma Modeling Methods and Applications (2nd Ed.) (London: IOP Publishing
[43]	Alves L L, Bogaerts A, Guerra V, Turner M M 2018 Plasma Sources Sci. Technol. 27 023002 Google Scholar
[44]	Hurlbatt A, Gibson A R, Schröter S, Bredin J, Foote A P S, Grondein P, O’Connell D, Gans T 2017 Plasma Processes Polym. 14 1600138 Google Scholar
[45]	Hagelaar G J M, Pitchford L C 2005 Plasma Sources Sci. Technol. 14 722 Google Scholar
[46]	Petrović Z Lj, Dujko S, Marić D, Malović G, Nikitović Ž, Šašić O, Jovanović J, Stojanović V, Radmilović-Radenović M 2009 J. Phys. D: Appl. Phys. 42 194002 Google Scholar
[47]	Surendra M, Graves D B, Jellum G M 1990 Phys. Rev. A 41 1112 Google Scholar
[48]	Janssen J F J, Pitchford L C, Hagelaar G J M, van Dijk J 2016 Plasma Sources Sci. Technol. 25 055026 Google Scholar
[49]	Kolobov V I, Arslanbekov R R 2006 IEEE Trans. Plasma Sci. 34 895 Google Scholar
[50]	Kolobov V I, Arslanbekov R R 2012 J. Comput. Phys. 231 839 Google Scholar
[51]	Arslanbekov R R, Kolobov V I, Frolova A A 2013 Phys. Rev. E 88 063301 Google Scholar
[52]	Birdsall C K 1991 IEEE Trans. Plasma Sci. 19 65 Google Scholar
[53]	Vahedi V, Surendra M 1995 Comput. Phys. Commun. 87 179 Google Scholar
[54]	Longo S 2000 Plasma Sources Sci. Technol. 9 468 Google Scholar
[55]	Nanbu K 2000 IEEE Trans. Plasma Sci. 28 971 Google Scholar
[56]	Toneli D A, Pessoa R S, Roberto M, Gudmundsson J T 2019 Plasma Sources Sci. Technol. 28 025007 Google Scholar
[57]	Kushner M J 2009 J. Phys. D: Appl. Phys. 42 194013 Google Scholar
[58]	LXCat: Plasma Data Exchange Project Database (http:// fr.lxcat.net/home/) [2023-10-5]
[59]	Tejero-del-Caz A, Guerra V, Gonçalves D, Lino da Silva M, Marques L, Pinhão N, Pintassilgo C D, Alves L L 2019 Plasma Sources Sci. Technol. 28 043001 Google Scholar
[60]	COMSOL MULTIPHYSICS (http://cn.comsol.com/) [2023-10-5]
[61]	Chutjian A, Garscaddenb A, Wadehra J M 1996 Phys. Rep. 264 393 Google Scholar
[62]	Fabrikant I I, Eden S, Mason N J, Fedor J 2017 Adv. At. Mol. Opt. Phys. 66 545 Google Scholar
[63]	Pshenichnyuk S A, Asfandiarov N L, Vorob’ev A S, Matejčík Š 2022 Phys. Usp. 65 163 Google Scholar
[64]	Underwood-Lemons T, Gergel T J, Moore J H 1995 J. Chem. Phys. 102 119 Google Scholar
[65]	Christophorou L G, Olthoff J K 2001 Int. J. Mass Spectrom. 205 27 Google Scholar
[66]	Fedor J, May O, Allan M 2008 Phys. Rev. A 78 032701 Google Scholar
[67]	Bose D, Rao M, Govindan T R, Meyyappan M 2003 Plasma Sources Sci. Technol. 12 225 Google Scholar
[68]	Zatsarinny O, Bartschat K 2013 J. Phys. B: At. Mol. Opt. Phys. 46 112001 Google Scholar
[69]	Takatsuka K, McKoy V 1981 Phys. Rev. A 24 2473 Google Scholar
[70]	Schneider B I, Rescigno T N 1988 Phys. Rev. A 37 3749 Google Scholar
[71]	Zammit M C, Fursa D V, Savage J S, Bray I 2017 J. Phys. B: At. Mol. Opt. Phys. 50 123001 Google Scholar
[72]	Antony B K, Joshipura K N, Mason N J 2005 J. Phys. B: At. Mol. Opt. Phys. 38 189 Google Scholar
[73]	Kim Y K 2001 Phys. Rev. A 64 032713 Google Scholar
[74]	Kim Y K, Rudd M E 1994 Phys. Rev. A 50 3954 Google Scholar
[75]	Tanaka H, Brunger M J, Campbell L, Kato H, Hoshino M, Rau A R P 2016 Rev. Mod. Phys. 88 025004 Google Scholar
[76]	Bartschat K 2013 J. Phys. D: Appl. Phys. 46 334004 Google Scholar
[77]	de Urquijo J, Arriaga C A, Cisneros C, Alvarez I 1999 J. Phys. D: Appl. Phys. 32 41 Google Scholar
[78]	Liu X J, Zhu L F, Jiang X M, Yuan Z S, Cai B, Chen X J, Xu K Z 2001 Rev. Sci. Instrum. 72 3357 Google Scholar
[79]	Fuss M C, Sanz A G, Blanco F, Oller J C, Limão-Vieira P, Brunger M J, García G 2013 Phys. Rev. A 88 042702 Google Scholar
[80]	Lozano A I, Oller J C, Krupa K, Ferreira da Silva F, Limão-Vieira P, Blanco F, Muñoz A, Colmenares R, García G 2018 Rev. Sci. Instrum. 89 063105 Google Scholar
[81]	Traoré Dubuis A, Costa F, Ferreira da Silva F, Limão-Vieira P, Oller J C, Blanco F, García G 2018 Chem. Phys. Lett. 699 182 Google Scholar
[82]	Costa F, Álvarez L, Lozano A I, Blanco F, Oller J C, Muñoz A, Souza Barbosa A, Bettega M H F, Ferreira da Silva F, Limão-Vieira P, White R D, Brunger M J, García G 2019 J. Chem. Phys. 151 084310 Google Scholar
[83]	Sullivan J P, Gilbert S J, Marler J P, Greaves R G, Buckman S J, Surko C M 2002 Phys. Rev. A 66 042708 Google Scholar
[84]	Mann A, Linder F 1992 J. Phys. B: At. Mol. Opt. Phys. 25 533 Google Scholar
[85]	Boesten L, Tanaka H, Kobayashi H, Dillon M A, Kimura M 1992 J. Phys. B: At. Mol. Opt. Phys. 25 1607 Google Scholar
[86]	Gauf A, Navarro C, Balch G, Hargreaves L R, Khakoo A, Winstead C, McKoy V 2013 Phys. Rev. A 87 012710 Google Scholar
[87]	Read F H, Channing J M 1996 Rev. Sci. Instrum. 67 2372 Google Scholar
[88]	Allan M 2004 Phys. Scr. 2004 161 Google Scholar
[89]	Gote M, Ehrhardt H 1995 J. Phys. B: At. Mol. Opt. Phys. 28 3957 Google Scholar
[90]	Mann A, Linder F 1992 J. Phys. B: At. Mol. Opt. Phys. 25 545 Google Scholar
[91]	Inokuti M 1971 Rev. Mod. Phys. 43 297 Google Scholar
[92]	Kim Y K 2007 J. Chem. Phys. 126 064305 Google Scholar
[93]	Wang S X, Zhu L F 2022 Chin. Phys. B 31 083401 Google Scholar
[94]	Zhong Z P, Feng R F, Xu K Z, Wu S L, Zhu L F, Zhang X J, Ji Q, Shi Q C 1997 Phys. Rev. A 55 1799 Google Scholar
[95]	Lassettre E N, Skerbele A 1971 J. Chem. Phys. 54 1597 Google Scholar
[96]	Zobel J, Mayer U, Jung K, Ehrhardt H 1996 J. Phys. B: At. Mol. Opt. Phys. 29 813 Google Scholar
[97]	Zetner P W, Kanik I, Trajmar S 1998 J. Phys. B: At. Mol. Opt. Phys. 31 2395 Google Scholar
[98]	Kato H, Kawahara H, Hoshino M, Tanaka H, Brunger M J, Kim Y K 2007 J. Chem. Phys. 126 064307 Google Scholar
[99]	Li H H, Wang S X, Zhu J H, Nie Z W, Chen J F, Wang L H, Ma W L, Zhu L F 2023 Plasma Sources Sci. Technol. 32 065011 Google Scholar
[100]	Goto M, Nakamura K, Toyoda H, Sugai H 1994 Jpn. J. Appl. Phys. 33 3602 Google Scholar
[101]	Sugai H, Toyoda H, Nakano T, Goto M 1995 Contrib. Plasma Phys. 35 415 Google Scholar
[102]	Morgan W L, Winstead C, McKoy V 2001 J. Appl. Phys. 90 2009 Google Scholar
[103]	Schülke W 2007 Electron Dynamics by Inelastic X-ray Scattering (Oxford: Oxford University Press
[104]	Xie B P, Zhu L F, Yang K, Zhou B, Hiraoka N, Cai Y Q, Yao Y, Wu C Q, Wang E L, Feng D L 2010 Phys. Rev. A 82 032501 Google Scholar
[105]	Zhu L F, Wang L S, Xie B P, Yang K, Hiraoka N, Cai Y Q, Feng D L 2011 J. Phys. B: At. Mol. Opt. Phys. 44 025203 Google Scholar
[106]	Mochizuki Y, Murai H, Kato H, Hoshino M, Tanaka H 2015 J. Phys. Conf. Ser. 635 052048 Google Scholar
[107]	Khakoo M A, Vandeventer P, Childers J G, Kanik I, Fontes C J, Bartschat K, Zeman V, Madison D H, Saxena S, Srivastava R, Stauffer A D 2004 J. Phys. B: At. Mol. Opt. Phys. 37 247 Google Scholar
[108]	Filipović D M, Marinković B P, Pejčev V, Vušković L 2000 J. Phys. B: At. Mol. Opt. Phys. 33 2081 Google Scholar
[109]	Filipović D M, Marinković B P, Pejčev V, Vušković L 2000 J. Phys. B: At. Mol. Opt. Phys. 33 677 Google Scholar
[110]	Chutjian A, Cartwright D C 1981 Phys. Rev. A 23 2178 Google Scholar
[111]	Bull J N, Bart M, Vallance C, Harland P W 2013 Phys. Rev. A 88 062710 Google Scholar
[112]	Karwasz G P, Możejko P, Song M Y 2014 Int. J. Mass Spectrom. 365–366 232 Google Scholar
[113]	Makochekanwa C, Oguri K, Suzuki R, Ishihara T, Hoshino M, Kimura M, Tanaka H 2006 Phys. Rev. A 74 042704 Google Scholar
[114]	Motlagh S, Moore J H 1998 J. Chem. Phys. 109 432 Google Scholar
[115]	Winters H F 1975 J. Chem. Phys. 63 3462 Google Scholar
[116]	Winters H F, Inokuti M 1982 Phys. Rev. A 25 1420 Google Scholar
[117]	Flaherty D W, Kasper M A, Baio J E, Graves D B, Winters H F, Winstead C, McKoy V 2006 J. Phys. D: Appl. Phys. 39 4393 Google Scholar
[118]	Ullrich J, Moshammer R, Dorn A, Dörner R, Schmidt L P H, Schmidt-Böcking H 2003 Rep. Prog. Phys. 66 1463 Google Scholar
[119]	Eppink A T J B, Parker D H 1997 Rev. Sci. Instrum. 68 3477 Google Scholar
[120]	Zhao Y R, Chen J J, Luo Z J, Chang Y, Yang J Y, Zhang W Q, Wu G R, Crane S W, Hansen C S, Ding H B, An F, Hu X X, Xie D Q, Ashfold M N R, Yuan K J, Yang X M 2023 Chem. Sci. 14 2501 Google Scholar
[121]	Adamovich I, Agarwal S, Ahedo E, Alves L L, Baalrud S, Babaeva N, Bogaerts A, Bourdon A, Bruggeman P J, Canal C, Choi E H, Coulombe S, Donkó Z, Graves D B, Hamaguchi S, Hegemann D, Hori M, Kim H H, Kroesen G M W, Kushner M J, Laricchiuta A, Li X, Magin T E, Mededovic Thagard S, Miller V, Murphy A B, Oehrlein G S, Puac N, Sankaran R M, Samukawa S, Shiratani M, Šimek M, Tarasenko N, Terashima K, Thomas Jr E, Trieschmann J, Tsikata S, Turner M M, van der Walt I J, van de Sanden M C M, von Woedtke T 2022 J. Phys. D: Appl. Phys. 55 373001 Google Scholar

[1]	Fang Ze, Pan Yong-Quan, Dai Dong, Zhang Jun-Bo. Physics-informed neural networks based on source term decoupled and its application in discharge plasma simulation. Acta Physica Sinica, 2024, 73(14): 145201. doi: 10.7498/aps.73.20240343
[2]	Wang Jing-Zhi, Ma Xin, Xiang Zheng, Gu Xu-Dong, Jiao Lu-Huai, Lei Liang-Jian, Ni Bin-Bin. Multi-dimensional modeling of radiation belt electron pitch-angle diffusion coefficients caused by plasmaspheric hiss. Acta Physica Sinica, 2022, 71(22): 229401. doi: 10.7498/aps.71.20220655
[3]	Zhang Quan-Zhi, Zhang Lei-Yu, Ma Fang-Fang, Wang You-Nian. Cryogenic etching of porous material. Acta Physica Sinica, 2021, 70(9): 098104. doi: 10.7498/aps.70.20202245
[4]	Sun An-Bang, Li Han-Wei, Xu Peng, Zhang Guan-Jun. Monte Carlo simulations of electron transport coefficients in low temperature streamer discharge plasmas. Acta Physica Sinica, 2017, 66(19): 195101. doi: 10.7498/aps.66.195101
[5]	Wang Xue-Yang, Qi Zhi-Hua, Song Ying, Liu Dong-Ping. Bacteria sterilization application by using plasma activated physiological saline. Acta Physica Sinica, 2016, 65(12): 123301. doi: 10.7498/aps.65.123301
[6]	He Man-Li, Wang Xiao, Zhang Ming, Wang Li, Song Rui. Vibrational distribution of H2 (D2 and T2) molecules in low temperature plasma. Acta Physica Sinica, 2014, 63(12): 125201. doi: 10.7498/aps.63.125201
[7]	Zhang Zeng-Hui, Zhang Guan-Jun, Shao Xian-Jun, Chang Zheng-Shi, Peng Zhao-Yu, Xu Hao. Modelling study of dielectric barrier glow discharge in Ar/NH3 mixture at atmospheric pressure. Acta Physica Sinica, 2012, 61(24): 245205. doi: 10.7498/aps.61.245205
[8]	Zhang Zeng-Hui, Shao Xian-Jun, Zhang Guan-Jun, Li Ya-Xi, Peng Zhao-Yu. One-dimensional simulation of dielectric barrier glow discharge in atmospheric pressure Ar. Acta Physica Sinica, 2012, 61(4): 045205. doi: 10.7498/aps.61.045205
[9]	Shao Xian-Jun, Ma Yue, Li Ya-Xi, Zhang Guan-Jun. One-dimensional simulation of low pressure xenon dielectric barrier discharge. Acta Physica Sinica, 2010, 59(12): 8747-8754. doi: 10.7498/aps.59.8747
[10]	Xu Bin, Wu Zhen-Sen, Wu Jian, Xue Kun. Incoherent scatter spectrum of a collisional plasma. Acta Physica Sinica, 2009, 58(7): 5104-5110. doi: 10.7498/aps.58.5104
[11]	Cao Meng, Wu Hui-Zhen, Liu Cheng, Lao Yan-Feng, Huang Zhan-Chao, Xie Zheng-Sheng, Zhang Jun, Jiang Shan. Effect of dry etching on light emission of InAsP/InP SMQWs. Acta Physica Sinica, 2007, 56(2): 1027-1031. doi: 10.7498/aps.56.1027
[12]	Zhou Guo-Cheng, Cao Jin-Bin, Wang De-Ju, Cai Chun-Lin. Low-frequency waves in collisionless plasma current sheet. Acta Physica Sinica, 2004, 53(8): 2644-2653. doi: 10.7498/aps.53.2644
[13]	Liu Ming-Hai, Hu Xi-Wei, Wu Qin-Chong, Yu Guo-Yang. . Acta Physica Sinica, 2000, 49(3): 497-501. doi: 10.7498/aps.49.497
[14]	LIU HONG-XIANG, WEI HE-LIN, LIU ZU-LI, LIU YAN-HONG, WANG JUN-ZHEN. EFFECT OF THE MAGNETIC MIRROR FIELD ON THE ION ENERGY DISTRIBUTIONS IN A RADIO F REQUENCY PLASMA. Acta Physica Sinica, 2000, 49(9): 1764-1768. doi: 10.7498/aps.49.1764
[15]	HUANG MAO, LIU KE-LING. COLLISION CROSS SECTIONS AND TRANSPORT COEFFICIENTS IN AN INDUCTIVELY COUPLED ARGON PLASMA. Acta Physica Sinica, 1987, 36(5): 630-639. doi: 10.7498/aps.36.630
[16]	CHEN YA-SHEN. THE PLASMA DRIVEN BY ELECTRONS WITH TWO-MAXWELL DISTRIBUTION. Acta Physica Sinica, 1986, 35(6): 762-770. doi: 10.7498/aps.35.762
[17]	ZHANG CHENG-FU. COMPARISION OF TWO COLLISION MODELS IN PLASMA. Acta Physica Sinica, 1986, 35(7): 947-952. doi: 10.7498/aps.35.947
[18]	ZHANG YANG-ZHONG. THE COHERENT RENORMALIZATION THEORY OF COLLISIONLESS PLASMA. Acta Physica Sinica, 1981, 30(8): 1020-1029. doi: 10.7498/aps.30.1020
[19]	KANG SHOU-WAN, CAI SHI-DONG. THE CRITICAL VELOCITY OF RUNAWAY ELECTRONS IN A MAGNETIZED PLASMA. Acta Physica Sinica, 1980, 29(3): 311-319. doi: 10.7498/aps.29.311
[20]	LU QUAN-KANG. DISPERSION RELATIONS OF COLLISIONLESS PLASMA WAVE GUIDE. Acta Physica Sinica, 1977, 26(1): 64-71. doi: 10.7498/aps.26.64

Catalog

Vol. 73, Issue 9 - 2024-05-05

Metrics

Abstract views: 4685
PDF Downloads: 318
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板