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The current-induced switching of in-plane exchange bias field (Heb) has many advantages, such as switching without assistance of external magnetic field, excellent immunity to magnetic field, and robust magnetic anisotropy. However, the blocking temperature of the nanoscale antiferromagnet/ferromagnet (AFM/FM) heterostructure is relatively low and susceptible to thermal effects. Therefore, the Joule heating theoretically plays a substantial role in the switching of Heb driven by current, but its underlying mechanism requires further investigation and verification. We prepare a series of Pt/IrMn/Py heterostructures with varying antiferromagnet IrMn thicknesses and systematically investigate the role of thermal effects in current-driven Heb switching. These results demonstrate that under millisecond-level current pulses, Joule heating heats the device above the blocking temperature, leading to the decoupling of exchange coupling at AFM/FM interface. Simultaneously, the Oersted field and spin-orbit torque field generated by the current switch the ferromagnetic moments, and then a new Heb will be induced along the direction of the ferromagnetic moments in the cooling process. Furthermore,in the switching process of Heb, the anisotropic magnetoresistance curve of the AFM/FM heterostructure exhibits a temperature-dependent two-step magnetization reversal phenomenon. Theoretical analysis indicates that this phenomenon arises from the competitive relationship between exchange bias coupling at AFM/FM interface and direct exchange coupling between the ferromagnetic moments. The findings of this study elucidate the crucial role of thermal effects in the current-driven switching of Heb, thereby contributing to the advancement of spintronic devices based on electrically controlled Heb.
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图 1 (a) Pt/IrMn/Py/MgO/Ru膜层结构示意图; (b) Pt/IrMn (6 nm)/Py薄膜的面内磁滞回线; (c) 霍尔条器件和测试结构图; Pt/IrMn (6 nm)/Py器件(d) 初始状态和(e)施加不同电流脉冲情况下的AMR曲线; (f) Heb 随Ipulse的变化曲线
Figure 1. (a) Schematic illustration of the Pt/IrMn/Py/MgO/Ru sample; (b) in-plane magnetic hysteresis loop of Pt/IrMn (6 nm)/Py film; (c) schematic of Hall bar device and electrical transport measurement; AMR curves of the Pt/IrMn (6 nm)/Py device under (d) initial state and (e) after applying a current pulse Ipulse; (f) Heb as a function of Ipulse.
图 2 Pt/IrMn (3, 4, 6, 8 nm)/Py器件的(a) Heb和(b) Td随Ipulse的变化; Pt/IrMn (6 nm)/Py器件的(c) Heb和(d) Td在Tc = 200, 300, 400 K时随Ipulse的变化; (e) 不同IrMn厚度器件的Heb随Tc大小的变化; (f) $T^* $和Tb随tIrMn大小的变化
Figure 2. (a) Heb and (b) Td vary with Ipulse of Pt/IrMn (3, 4, 6, 8 nm)/Py devices; (c) Heb and (d) Td vary with Ipulse for Pt/IrMn (6 nm)/Py device at Tc = 200, 300, 400 K; (e) dependence of Heb on Tc for the Pt/IrMn (3, 4, 6, 8 nm)/Py devices; (f) $T^*$ and Tb as a function of tIrMn.
图 3 (a) Pt/IrMn (6 nm)/Py器件在不同外磁场Hext下的AMR曲线; (b) 恒定电流脉冲Ipulse = –32 mA或Ipulse = +32 mA下, Heb随Hext大小的变化关系; (c) 施加不同大小电流时Pt/IrMn (3 nm)/Py器件的AMR曲线; (d) Heb翻转时器件的Hc、电流产生的HOe以及改变Heb翻转极性的Hext大小随IrMn厚度的变化关系
Figure 3. (a) AMR curves of the Pt/IrMn (6 nm)/Py device under a constant current pulse Ipulse = +32 mA and varying Hext; (b) Heb varies with Hext for the Pt/IrMn (6 nm)/Py device under Ipulse = ±32 mA; (c) AMR curves of the Pt/IrMn (3 nm)/Py device under different Ipulse; (d) HOe, Hc and Hext of the Pt/IrMn (3, 4, 6, 8 nm)/Py devices when Heb switches.
图 4 (a) 在Tc = 300 K时, Pt/IrMn (4 nm)/Py器件施加电流脉冲Ipulse后测得的AMR曲线以及其(b) 对应的反铁磁和铁磁序状态; (c) 在Tc = 360 K时, Pt/IrMn (4 nm)/Py器件施加电流脉冲Ipulse后测得的AMR曲线; (d) 在Tc = 300 K时, 施加电流脉冲Ipulse = –28 mA后, Pt/IrMn (4 nm)/Py器件在Tc = 300 K和Tc = 360 K时测得的AMR曲线; (e) 在Tc = 360 K时, 施加电流脉冲Ipulse = –23 mA后, Pt/IrMn (4 nm)/Py器件在Tc = 300 K和Tc = 360 K时测得的AMR曲线; Pt/IrMn (4 nm)/Py器件在(f) Tc = 360 K和(g) Tc = 300 K时的反铁磁和铁磁序状态
Figure 4. (a) AMR curves and (b) the corresponding antiferromagnetic and ferromagnetic states of the Pt/IrMn (4 nm)/Py device after applying a Ipulse at Tc = 300 K; (c) AMR curves of the Pt/IrMn (4 nm)/Py device after applying a Ipulse at Tc = 360 K; (d) AMR curves of the Pt/IrMn (4 nm)/Py device at Tc=300 K and Tc = 360 K after applying a Ipulse = –28 mA at Tc = 300 K; (e) AMR curves of the Pt/IrMn (4 nm)/Py device at Tc = 300 K and Tc = 360 K after applying a Ipulse = –23 mA at Tc=360 K; Antiferromagnetic and ferromagnetic states of the Pt/IrMn (4 nm)/Py device at (f) Tc = 360 K and (g) Tc = 300 K.
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[1] Cai W, Huang Y, Zhang X, Wang S, Pan Y, Yin J, Shi K, Zhao W 2023 Sci. China Phys. Mech. 66 117503
Google Scholar
[2] Jinnai B, Watanabe K, Fukami S, Ohno H 2020 Appl. Phys. Lett. 116 160501
Google Scholar
[3] Lin P H, Yang B Y, Tsai M H, Chen P C, Huang K F, Lin H H, Lai C H 2019 Nat. Mater. 18 335
Google Scholar
[4] Liu X H, Edmonds K W, Zhou Z P, Wang K Y 2020 Phys. Rev. Appl. 13 014059
Google Scholar
[5] Yun J, Bai Q, Yan Z, Chang M, Mao J, Zuo Y, Yang D, Xi L, Xue D 2020 Adv. Funct. Mat. 30 1909092
Google Scholar
[6] Zhang E Z, Deng Y C, Liu X H, Zhan X Z, Zhu T, Wang K Y 2021 Phys. Rev. B 104 134408
Google Scholar
[7] Peng S, Zhu D, Li W, Wu H, Grutter A J, Gilbert D A, Lu J, Xiong D, Cai W, Shafer P, Wang K L, Zhao W 2020 Nat. Electron. 3 757
Google Scholar
[8] Liu R, Zhang Y, Yuan Y, Lu Y, Liu T, Chen J, Wei L, Wu D, You B, Zhang W, Du J 2023 Appl. Phys. Lett. 122 062401
Google Scholar
[9] Fang B, Sánchez-Tejerina San José L, Chen A, Li Y, Zheng D, Ma Y, Algaidi H, Liu K, Finocchio G, Zhang X 2022 Adv. Funct. Mater. 32 2112406
Google Scholar
[10] Xie X, Zhao X, Dong Y, Qu X, Zheng K, Han X, Han X, Fan Y, Bai L, Chen Y, Dai Y, Tian Y, Yan S 2021 Nat. Commun. 12 2473
Google Scholar
[11] Huang Q, Guan C, Fan Y, Zhao X, Han X, Dong Y, Xie X, Zhou T, Bai L, Peng Y, Tian Y, Yan S 2022 ACS Nano 16 12462
Google Scholar
[12] Zhang K, Chen L, Zhang Y, Hong B, He Y, Lin K, Zhang Z, Zheng Z, Feng X, Zhang Y, Otani Y, Zhao W 2022 Appl. Phys. Rev. 9 011407
Google Scholar
[13] Zheng Z Y, Zhang Y, Feng X Q, Zhang K, Nan J, Zhang Z Z, Wang G D, Wang J K, Lei N, Liu D J, Zhang Y G, Zhao W S 2019 Phys. Rev. Appl. 12 044032
Google Scholar
[14] Wang M, Cai W, Zhu D, Wang Z, Kan J, Zhao Z, Cao K, Wang Z, Zhang Y, Zhang T, Park C, Wang J P, Fert A, Zhao W 2018 Nat. Electron. 1 582
Google Scholar
[15] Ryu J, Thompson R, Park J Y, Kim S J, Choi G, Kang J, Jeong H B, Kohda M, Yuk J M, Nitta J, Lee K J, Park B G 2022 Nat. Electron. 5 217
Google Scholar
[16] Zhu D Q, Guo Z X, Du A, Xiong D R, Xiao R, Cai W L, Shi K W, Peng S Z, Cao K H, Lu S Y, Zhu D P, Wang G F, Liu H X, Leng Q W, Zhao W S 2021 IEEE International Electron Devices Meeting (IEDM) San Francisco, America, December 11–15, 2021, p17.5.1
[17] Du A, Zhu D, Cao K, Zhang Z, Guo Z, Shi K, Xiong D, Xiao R, Cai W, Yin J, Lu S, Zhang C, Zhang Y, Luo S, Fert A, Zhao W 2023 Nat. Electron. 6 425
Google Scholar
[18] Zheng Z, Zhang Z, Feng X, Zhang K, Zhang Y, He Y, Chen L, Lin K, Zhang Y, Khalili Amiri P, Zhao W 2022 ACS Nano 16 8264
Google Scholar
[19] Li D, Yun J, Chen S, Cui B, Guo X, Wu K, Zuo Y, Yang D, Wang J, Xi L 2018 J. Phys. D. Appl. Phys. 51 265003
Google Scholar
[20] Lombard L, Gapihan E, Sousa R C, Dahmane Y, Conraux Y, Portemont C, Ducruet C, Papusoi C, Prejbeanu I L, Nozières J P, Dieny B, Schuhl A 2010 J. Appl. Phys. 107 09d728
Google Scholar
[21] Prejbeanu I L, Kerekes M, Sousa R C, Sibuet H, Redon O, Dieny B, Nozières J P 2007 J. Phys. Condens. Matter. 19 165218
Google Scholar
[22] Rinaldi C, Baldrati L, Di Loreto M, Asa M, Bertacco R, Cantoni M 2018 IEEE Trans. Magn. 54 1
Google Scholar
[23] Lee K M, Choi J W, Sok J, Min B-C 2017 AIP Adv. 7 065107
Google Scholar
[24] Pajda M, Kudrnovský J, Turek I, Drchal V, Bruno P 2001 Phys. Rev. B 64 174402
Google Scholar
[25] Zhao X, Dong Y, Chen W, Xie X, Bai L, Chen Y, Kang S, Yan S, Tian Y 2021 Adv. Funct. Mat. 31 2105359
Google Scholar
[26] Fan Y, Han X, Zhao X, Dong Y, Chen Y, Bai L, Yan S, Tian Y 2022 ACS Nano 16 6878
Google Scholar
[27] Han X, Fan Y, Wang D, Wang W, Bai L, Chen Y, Yan S, Tian Y 2023 Appl. Phys. Lett. 122 052404
Google Scholar
[28] Chen J Y, Thiyagarajah N, Xu H J, Coey J M D 2014 Appl. Phys. Lett. 104 152405
Google Scholar
[29] Du Y, Pan G, Moate R, Ohldag H, Kovacs A, Kohn A 2010 Appl. Phys. Lett. 96 222503
Google Scholar
[30] Zhang C, Feng X, Zhan Q, Hu Y 2022 Phys. Rev. B 105 174409
Google Scholar
[31] Ding S L, Wu R, Fu J B, Wen X, Du H L, Liu S Q, Han J Z, Yang Y C, Wang C S, Zhou D, Yang J B 2015 Appl. Phys. Lett. 107 172404
Google Scholar
[32] Oh Y W, Chris Baek S H, Kim Y M, Lee H Y, Lee K D, Yang C G, Park E S, Lee K S, Kim K W, Go G, Jeong J R, Min B C, Lee H W, Lee K J, Park B G 2016 Nat. Nanotechnol. 11 878
Google Scholar
[33] Liu L, Moriyama T, Ralph D C, Buhrman R A 2011 Phys. Rev. Lett. 106 036601
Google Scholar
[34] Qiao H, Niu Y, Li X, Mi S, Liu X, Xue J, Wu S, Wang X, Liu Q, Wang J 2022 J. Phys. D. Appl. Phys. 56 025003
Google Scholar
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