Simulation study of neutron radiation damage to cadmium zinc telluride

Wei Wen-Jing; Gao Xu-Dong; Lü Liang-Liang; Xu Nan-Nan; Li Gong-Ping

doi:10.7498/aps.71.20221195

Abstract

In recent years, the development of new semiconductor materials has made an opportunity and challenge for technological innovation and the development of emerging industries. Among them, cadmium zinc telluride materials have highlighted important application prospects due to their excellent properties. The CdZnTe, as the third-generation cutting-edge strategic semiconductor material, has the advantages of high detection efficiency, low dark current, strong portability, and applicability at room temperature without additional cooling system. However, when the cadmium zinc telluride detector is exposed to radiation environment for a long time, it will cause different degrees of radiation damage, which will affect the performance of the device or even fail to work, and greatly shorten the service time of the detector in the radiation field. The transport process of 1.00–14.00 MeV neutrons in CdZnTe material is simulated to obtain the information about the primary knock-on atoms, and then by combining with the cascade collision model, the irradiation of neutrons with different energy in CdZnTe material is analyzed. The damage is simulated and calculated. The calculation results are shown below. The energy of most of the primary knock-on atoms is located at the low-energy end, and with the increase of the incident neutron energy, the types of primary knock-on atoms are more abundant, and the energy also increases gradually. With neutron irradiation of CdZnTe, the non-ionizing energy loss is uniformly distributed along the depth direction in the material, and the non-ionizing energy loss first increases and then decreases with the increase of the incident neutron energy. The calculation results of displacements per atom(dpa) show that the dpa also increases first with the increase of the incident neutron energy. And further analysis shows that the number of Te displacement atom atoms and the number of the Zn displacement atoms both increase first and decrease then with the increase of incident neutron energy, while the number of Cd displacement atoms increases with the increase of incident neutron energy, which is co-modulated by its inelastic scattering cross-section and other nuclear-like reaction cross-sections. The comprehensive analysis shows that with the increase of the incident neutron energy, inelastic scattering becomes the main factor causing the internal displacement damage of the material.

Keywords:

Authors and contacts

School of Nuclear Science and Techology, Lanzhou University, Lanzhou 730000, China

Corresponding author: Li Gong-Ping, ligp@lzu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11975006, 11575074), and the Open Project of Key Laboratory of Special Functional Materials and Structural Design of the Ministry of Education (Class B) of Lanzhou University in 2021 (Grant No. lzujbky-2021-kb06).

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References

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Cited By

图 1 中子在CdZnTe中的平均自由程

Figure 1. The mean free path of neutron in CdZnTe.

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图 2 Geant4几何模型结构示意图

Figure 2. Schematic diagram of Geant4 geometric model structure.

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图 3 中子反应截面　(a) Cd; (b) Te; (c) Zn

Figure 3. Neutron reaction cross section: (a) Cd; (b) Te; (c) Zn.

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图 4 中子辐照不同种类PKA能谱图　(a) 2.45 MeV; (b) 14.00 MeV

Figure 4. PKA spectra of different types of neutron irradiation: (a) 2.45 MeV; (b) 14.00 MeV.

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图 5 不同能量中子辐照CZT材料NIEL随深度变化

Figure 5. NIEL of CZT material irradiated by neutrons of different energies varies with depth.

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图 6 不同反应类型NIEL随入射中子能量变化

Figure 6. NIEL varies with incident neutron energy in different reaction types.

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图 7 不同反应类型造成离位原子数随能量变化　(a) Cd; (b) Te; (c) Zn; (d) Tot

Figure 7. The number of dislocated atoms varies with energy due to different reaction types: (a) Cd; (b) Te; (c) Zn; (d) Tot.

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图 8 各类原子dpa随中子能量变化

Figure 8. Dpa of various atoms varies with neutron energy.

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表 1 不同能量中子辐照CZT产生PKA信息汇总表

Table 1. Summary of PKA generated by neutron incident Cd, Te, Zn.

Energy/ MeV	Element	Recoil atoms	E_k	E_dam(T)	Percentage/%
2.45	Cd	¹¹⁴Cd(12.57%) ¹¹²Cd(10.47%) ¹¹¹Cd(5.57%) ¹¹³Cd(5.44%) ¹¹⁰Cd(5.33%) ¹¹⁶Cd(3.31%) ^{106—109, 115, 117}Cd(0.98%)	0.002 eV— 91.79 keV	0.002 eV— 76.80 keV	43.67
	Te	¹³⁰Te(18.43%) ¹²⁸Te(16.58%) ¹²⁶Te(9.94%) ¹²⁵Te(3.71%) ¹²⁴Te(2.51%) ¹²²Te(1.32%) ^{120, 121, 123, 127, 129, 131}Te(0.58%)	0.03 eV— 81.05 keV	0.03 eV— 69.68 keV	53.05
	Zn	⁶⁴Zn(1.59%) ⁶⁶Zn(0.93%) ⁶⁸Zn(0.55%) ^{65, 67, 69—70}Zn(0.15%)	1.33 eV— 150.18 keV	1.29 eV— 102.91 keV	3.23
	Other	¹H ⁴He ^{61, 64}Ni ⁶⁴Cu etc.	527.59 eV— 5.62 MeV	492.12 eV— 239.7 keV	0.05
14.00	Cd	¹¹²Cd(11.47%) ¹¹⁴Cd(10.38%) ¹¹³Cd(9.46%) ¹¹¹Cd(8.68%) ¹¹⁰Cd(7.08%) ¹¹⁶Cd(2.66%) ¹⁰⁹Cd(2.02%) ¹¹⁵Cd(1.47%) ^{105—108, 117}Cd(1.12%)	0.07 eV— 548.26 keV	0.07 eV— 314.20 keV	54.34
	Te	¹³⁰Te(13.88%) ¹²⁸Te(13.17%) ¹²⁶Te(7.87%) ¹²⁵Te(2.85%) ¹²⁴Te(2.02%) ¹²²Te(1.10%) ^{120—121, 123, 127, 129, 131}Te(0.41%)	0.05 eV— 458.06 keV	0.05 eV— 279.67 keV	41.29
	Zn	⁶⁴Zn(1.30%) ⁶⁶Zn(0.87%) ⁶⁸Zn(0.54%) ^{65, 67, 69—70}Zn(0.13%)	0.87 eV— 861.92 keV	0.85 eV— 325.25 keV	2.83
	H	¹H(0.71%) ²H(0.02%)	2.17 keV— 14.60 MeV	313.33 eV— 1.69 keV	0.73
	Other	⁴He (0.26%) ^{61, 63—65, 67}Ni ^{63—68, 70}Cu ^{120—128, 130}Sb ^{102—111, 113}Pd ^{105—114, 116}Ag ^{117, 119—123, 125, 127}Sn etc.	328.98 eV— 19.94 MeV	315.24 eV— 0.66 MeV	0.81

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表 A1 中子入射CdZnTe产生的PKA详细信息汇总表

Table A1. Summary of PKA details generated by neutron incident CdZnTe.

Energy/ MeV	Element	Recoil atoms	E_k	E_dam(T)	Percen- tage
1.00	Cd	¹¹⁴Cd (13.61%), ¹¹²Cd (11.30%), ¹¹¹Cd (6.00%) ¹¹³Cd(5.83%), ¹¹⁰Cd (5.80%), ¹¹⁶Cd (3.56%) ^{106—109, 115, 117}Cd (1.06%)	0.03 eV—37.49 keV	0.03 eV—32.95 keV	47.16%
	Te	¹³⁰Te (16.79%), ¹²⁸Te(15.86%), ¹²⁶Te (9.30%) ¹²⁵Te (3.51%), ¹²⁴Te (2.40%), ¹²²Te (1.27%) ^{120, 121, 123, 127, 129, 131}Te (0.57%)	0.02 eV—33.17 keV	0.02 eV—29.67 keV	49.69%
	Zn	⁶⁴Zn (1.55%), ⁶⁶Zn (0.87%), ⁶⁸Zn (0.57%) ^{65, 67, 69—71}Zn (0.15%)	0.10 eV—61.31 keV	0.10 eV—47.55 keV	3.14%
	Other	⁴He, ⁶¹Ni, etc.	0.12—3.84 MeV	5.88—171.64 keV	0.01%
2.45	Cd	¹¹⁴Cd(12.57%), ¹¹²Cd(10.47%), ¹¹¹Cd(5.57%) ¹¹³Cd(5.44%), ¹¹⁰Cd(5.33%), ¹¹⁶Cd(3.31%) ^{106—109, 115, 117}Cd(0.98%)	0.002 eV—91.79 keV	0.002 eV—76.80 keV	43.67%
	Te	¹³⁰Te(18.43%), ¹²⁸Te(16.58%), ¹²⁶Te(9.94%) ¹²⁵Te(3.71%), ¹²⁴Te(2.51%), ¹²²Te(1.32%) ^{120, 121, 123, 127, 129, 131}Te(0.58%)	0.03 eV—81.05 keV	0.03 eV—69.68 keV	53.05%
	Zn	⁶⁴Zn(1.59%), ⁶⁶Zn(0.93%), ⁶⁸Zn(0.55%) ^{65, 67, 69—70}Zn(0.15%)	1.33 eV—150.18 keV	1.29 eV—102.91 keV	3.23%
	Other	¹H, ⁴He, ^{61, 64}Ni, ⁶⁴Cu, etc.	527.59 eV—5.62 MeV	492.12 eV—239.77 keV	0.05%
5.00	Cd	¹¹⁴Cd(12.56%), ¹¹²Cd(10.53%), ¹¹¹Cd(5.60%) ¹¹⁰Cd(5.39%), ¹¹³Cd(5.32%), ¹¹⁶Cd(3.33%) ^{106—109, 115, 117}Cd(0.93%)	0.04 eV—187.28 keV	0.04 eV—147.18 keV	43.66%
	Te	¹³⁰Te(17.82%), ¹²⁸Te(16.26%), ¹²⁶Te(9.67%) ¹²⁵Te(3.61%), ¹²⁴Te(2.45%), ¹²²Te(1.30%) ^{120, 121, 123, 127, 129, 131}Te(0.54%)	0.02 eV—163.22 keV	0.02 eV—133.96 keV	51.65%
	Zn	⁶⁴Zn(2.07%), ⁶⁶Zn(1.26%), ⁶⁸Zn(0.86%) ^{65, 67, 69—71}Zn(0.21%)	0.20 eV—306.43 keV	0.20 eV—150.03 keV	4.39%
	Other	^{64, 66—67}Cu, ^{103, 108}Pd, ¹H, ⁴He ^{61, 63—65} Ni, ^{106, 108}Ag, etc.	163.93 eV—10.68 MeV	154.95 eV—368.6 keV	0.30%
10.00	Cd	¹¹⁴Cd(13.72%), ¹¹²Cd(13.72%), ¹¹⁰Cd(7.19%) ¹¹¹Cd(5.30%), ¹¹³Cd(4.80%), ¹¹⁶Cd(3.44%) ^{106—109, 115, 117}Cd(1.32%)	0.04 eV—387.48 keV	0.04 eV—234.63 keV	49.08%
	Te	¹³⁰Te(15.10%), ¹²⁸Te(15.02%), ¹²⁶Te(9.37%) ¹²⁵Te(2.65%), ¹²⁴Te(2.50%), ¹²²Te(1.37%) ^{120, 123, 127, 129, 131}Te(0.42%)	0.02 eV—327.02 keV	0.02 eV—207.62 keV	46.42%
	Zn	⁶⁴Zn(1.77%), ⁶⁶Zn(1.15%), ⁶⁸Zn(0.81%) ^{67, 69—70}Zn(0.17%)	0.21 eV—614.56 keV	0.21 eV—256.14 keV	3.90%
	Other	^1—2H(0.21%), ^{63—64, 66—68}Cu(0.17%), ⁴He (0.10%) ^{61, 63—65} Ni, ^{102—103, 105, 107—108, 110}Pd ^{117, 119—123, 127}Sn, ^{106, 108, 110—114}Ag ^{120, 122—126, 128, 130}Sb, etc.	1940.87 eV—15.72 MeV	554.83 eV—547.11 keV	0.60%
14.00	Cd	¹¹²Cd(11.47%), ¹¹⁴Cd(10.38%), ¹¹³Cd(9.46%) ¹¹¹Cd(8.68%), ¹¹⁰Cd(7.08%), ¹¹⁶Cd(2.66%) ¹⁰⁹Cd(2.02%), ¹¹⁵Cd(1.47%) , ^{105—108, 117}Cd(1.12%)	0.07 eV—548.26 keV	0.07 eV—314.20 keV	54.34%
	Te	¹³⁰Te(13.88%), ¹²⁸Te(13.17%), ¹²⁶Te(7.87%) ¹²⁵Te(2.85%), ¹²⁴Te(2.02%), ¹²²Te(1.10%) ^{120—121, 123, 127, 129, 131}Te(0.41%)	0.05 eV—458.06 keV	0.05 eV—279.67 keV	41.29%
	Zn	⁶⁴Zn(1.30%), ⁶⁶Zn(0.87%), ⁶⁸Zn(0.54%) ^{65, 67, 69—70}Zn(0.13%)	0.87 eV—861.92 keV	0.85 eV—325.25 keV	2.83%
	H	¹H(0.71%), ²H(0.02%)	2.17 keV—14.60 MeV	313.33 eV—1.69 keV	0.73%
	Other	⁴He (0.26%), ^{61, 63—65, 67} Ni, ^{63—68, 70}Cu ^{120—128, 130}Sb, ^{102—111, 113}Pd, ^{105—114, 116}Ag ^{117, 119—123, 125, 127}Sn, etc.	328.98 eV—19.94 MeV	315.24 eV—0.66 MeV	0.81%

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[1]	Alam M D, Nasim S S, Hasan S 2021 Prog. Nucl. Energy 140 103918 Google Scholar
[2]	Takahashi T, Watanabe S 2001 IEEE Trans. Nucl. Sci. 48 950 Google Scholar
[3]	Rao C V S, Shankara Joisa Y, Hansalia C J, Hui A K, Paul R, Ranjan P 1997 Rev. Sci. Instrum. 68 1142 Google Scholar
[4]	Alper B, Dillon S, Edwards A W, Gill R D, Robins R, Wilson D J 1997 Rev. Sci. Instrum. 68 778
[5]	Ingesson L C, Alper B, Peterson B J, Vallet J C 2008 Fusion Sci. Technol. 53 528 Google Scholar
[6]	Yin Y, Li Y, Wang T, Huang C, Ye Z, Li G 2020 Sensors 20 E1294 Google Scholar
[7]	Johns P M, Nino J C 2019 J. Appl. Phys. 126 040902 Google Scholar
[8]	Gu Y, Jie W, Rong C, Wang Y, Xu L, Xu Y, Lv H, Shen H, Du G, Fu X, Guo N, Zha G, Wang T 2016 Nucl. Instrum. Methods Phys. Res. Sect. B Beam Interact. Mater. At. 386 16 Google Scholar
[9]	Xu L, Jie W, Zha G, Xu Y, Zhao X, Feng T, Luo L, Zhang W, Nan R, Wang T 2013 Cryst. Eng. Comm. 15 10304 Google Scholar
[10]	Bao L, Zha G, Gu Y, Jie W 2021 Mater. Sci. Semicond. Process. 121 105369 Google Scholar
[11]	Eisen Y, Shor A 2009 IEEE Trans. Nucl. Sci. 56 1700 Google Scholar
[12]	Bao L, Zha G, Xu L, Zhang B, Dong J, Li Y, Jie W 2019 Mater. Sci. Semicond. Process. 100 179 Google Scholar
[13]	Bartlett L M, Stahle C M, Shu P K, Barbier L M, Barthelmy S D, Gehrels N A, Krizmanic J F, Kurczynski P, Palmer D M, Parsons A M, Teegarden B J, Tueller J 1996 Hard X-RayGamma-Ray Neutron Opt. Sens. Appl. 1996-07-19 pp10–16
[14]	李薇, 白雨蓉, 郭昊轩, 贺朝会, 李永宏 2022 71 082401 Google Scholar Li W, Bai Y R, Guo H X, He C H, Li Y H 2022 Acta Phys. Sin. 71 082401 Google Scholar
[15]	陈金勇 2014 硕士学位论文 (西安: 西安电子科技大学) Chen J Y 2014 M. S. Thesis ( Xi'an: Xidian University) (in Chinese)
[16]	谢飞, 臧航, 刘方, 何欢, 廖文龙, 黄煜 2020 69 192401 Google Scholar Xie F, Zang H, Liu F, He H, Liao W L, Huang Y 2020 Acta Phys. Sin. 69 192401 Google Scholar
[17]	崔振国, 勾成俊, 侯氢, 毛莉, 周晓松 2013 62 156105 Google Scholar Cui Z G, Gou C J, Hou Q, Mao L, Zhou X S 2013 Acta Phys. Sin. 62 156105 Google Scholar
[18]	Agostinelli S, Allison J, Amako K, et 2003 Nucl. Instrum. Methods Phys. Res. Sect. Accel. Spectrometers Detect. Assoc. Equip. 506 250 Google Scholar
[19]	Allison J, Amako K, Apostolakis J, et al. 2006 IEEE Trans. Nucl. Sci. 53 270 Google Scholar
[20]	Allison J, Amako K, Apostolakis J, et al. 2016 Nucl. Instrum. Methods Phys. Res. Sect. Accel. Spectrometers Detect. Assoc. Equip. 835 186 Google Scholar
[21]	Srour J R, Marshall C J, Marshall P W 2003 IEEE Trans. Nucl. Sci. 50 653 Google Scholar
[22]	郝蕊静, 郭红霞, 潘霄宇, 吕玲, 雷志锋, 李波, 钟向丽, 欧阳晓平, 董世剑 2020 69 207301 Google Scholar Hao R J, Guo H X, Pan X Y, Lv L, Lei Z F, Li B, Zhong X L, Ouyang X P, Dong S J 2020 Acta Phys. Sin. 69 207301 Google Scholar
[23]	申帅帅, 贺朝会, 李永宏 2018 67 182401 Google Scholar Shen S S, He C H, Li Y H 2018 Acta Phys. Sin. 67 182401 Google Scholar
[24]	Akkerman A, Barak J, Chadwick M B, Levinson J, Murat M, Lifshitz Y 2001 Radiat. Phys. Chem. 62 301 Google Scholar
[25]	Liu Y, Zhu T, Yao J, Ouyang X 2019 Sensors 19 1767 Google Scholar
[26]	朱金辉, 韦源, 谢红刚, 牛胜利, 黄流兴 2014 63 066102 Google Scholar Zhu J H, Wei Y, Xie H G, Niu S L, Huang L X 2014 Acta Phys. Sin. 63 066102 Google Scholar
[27]	Robinson M, Torrens I 1974 Phys. Rev. B 9 5008 Google Scholar
[28]	Nordlund K, Zinkle S J, Sand A E, Granberg F, Averback R S, Stoller R E, Suzudo T, Malerba L, Banhart F, Weber W J, Willaime F, Dudarev S L, Simeone D 2018 J. Nucl. Mater. 512 450 Google Scholar
[29]	Nordlund K, Zinkle S J, Sand A E, Granberg F, Averback R S, Stoller R, Suzudo T, Malerba L, Banhart F, Weber W J, Willaime F, Dudarev S L, Simeone D 2018 Nat. Commun. 9 1084 Google Scholar
[30]	Bryant F J, Webster E 1967 Phys. Status Solidi B 21 315 Google Scholar
[31]	Guo R, Xu Y, Wang T, Zha G, Jie W 2020 J. Appl. Phys. 127 024501 Google Scholar

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Vol. 71, Issue 22 - 2022-11-20

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