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Binary rare earth hexaborides (REB6) have different rare earth elements with different valence electron distributions, which lead to different strange physical properties and different emission properties. However, in the electron emission properties, whether PrB6, NdB6, SmB6 and GdB6 all have excellent emission properties remains to be further studied, and the physical mechanism affecting their emission properties needs investigating. In this paper, the electronic structures, work functions of typical binary single crystal REB6 (LaB6, CeB6, PrB6, NdB6, SmB6, GdB6) are studied by first principles calculations. The single crystal REB6 are prepared by optical zone melting method, and their thermionic electron emission properties are tested experimentally. The theoretical calculation results show that the typical binary REB6 have large densities of states near the Fermi level. The d-orbitals with broad distributions in conduction bands are beneficial to electron emission. The localized f-orbital electrons in valence bands are not conducive to their electron emission. The theoretical calculations of work functions of typical binary single crystal REB6 (100) surface are consistent with the analyses of their electronic structures. The theoretical calculation values of work functions are ordered as GdB6 (2.27 eV) < CeB6 (2.36 eV) < LaB6 (2.40 eV) < PrB6 (2.58 eV) < SmB6 (2.63 eV) < NdB6 (2.91 eV). The experimental test results of thermionic electron emission of single crystal show that the experimental thermionic electron properties are consistent with the theoretical ones. The LaB6 and CeB6 both have good thermionic and field emission properties, and the GdB6 has excellent field emission properties.
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Keywords:
- single crystal REB6 /
- first principles /
- work function /
- thermionic emission
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Bao L H, Zhang J X, Zhou S L, Zhang N 2011 Acta Phys. Sin. 60 106501Google Scholar
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[18] Weng H M, Zhao J Z, Wang Z J, Fang Z, Dai X 2014 Phys. Rev. Lett. 112 016403Google Scholar
[19] Lu F, Zhao J Z, Weng H M, Fang Z, Dai X 2013 Phys. Rev. Lett. 110 096401Google Scholar
[20] Qin X, Liu X, Huang W, Bettinelli M, Liu X 2017 Chem. Rev. 117 4488Google Scholar
[21] Elkelany K E, Ravoux C, Desmarais J K, Cortona P, Pan Y, Tse J S, Erba A 2018 Phys. Rev. B 97 245118Google Scholar
[22] 包黎红, 那仁格日乐, 特古斯, 张忻, 张久兴 2013 62 196105Google Scholar
Bao L H, Narengerile, Tegus O, Zhang X, Zhang J X 2013 Acta Phys. Sin. 62 196105Google Scholar
[23] Liu H, Zhang X, Ning S, Xiao Y, Zhang J 2017 Vacuum 143 245Google Scholar
[24] 刘洪亮, 张忻, 王杨, 肖怡新, 张久兴 2018 67 048101Google Scholar
Liu H L, Zhang X, Wang Y, Xiao Y X, Zhang J X 2018 Acta Phys. Sin. 67 048101Google Scholar
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[1] Duan J, Zhou T, Zhang L, Du J G, Jiang G, Wang H B 2015 Chin. Phys. B 24 096201Google Scholar
[2] Zhang H, Tang J, Yuan J, Yamauchi Y, Suzuki T T, Shinya N, Nakajima K, Qin L C 2016 Nat. Nanotechnol. 11 273Google Scholar
[3] 包黎红, 张久兴, 周身林, 张宁 2011 60 106501Google Scholar
Bao L H, Zhang J X, Zhou S L, Zhang N 2011 Acta Phys. Sin. 60 106501Google Scholar
[4] Zhou N, Zhang W, Zhang X, Liu H, Lu Q, Xiao Y, Liu Y, Jin S, Liao N 2021 Vacuum 184 109929Google Scholar
[5] Hoyoung J, Friemel G, Ollivier J, Dukhnenko A V, N Yu S, Filipov V B, Keimer B, Inosov D S 2014 Nat. Mater. 13 682Google Scholar
[6] Wang Y, Zhao J, Yang X, Cheng H, Xu B, Ning S, Zhang J 2019 Cryst. Res. Technol. 54 1800276Google Scholar
[7] Stankiewicz J, Evangelisti M, Fisk Z 2011 Phys. Rev. B 83 113108Google Scholar
[8] Nikitin S E, Portnichenko P Y, Dukhnenko A V, Shitsevalova N Y, Filipov V B, Qiu Y, Rodriguezrivera J A, Ollivier J, Inosov D S 2018 Phys. Rev. B 97 075116Google Scholar
[9] Zhang H, Zhang Q, Zhao G P, Tang J, Zhou O, Qin L C 2005 J. Am. Chem. Soc. 127 13120Google Scholar
[10] Paul S, Dohun K, Michael S F, Johnpierre P 2015 Phys. Rev. Lett. 114 096601Google Scholar
[11] Sundermann M, Yavaş H, Chen K, Kim D J, Fisk Z, Kasinathan D, Haverkort M W, Thalmeier P, Severing A, Tjeng L H 2018 Phys. Rev. Lett. 120 016402Google Scholar
[12] Liu T, Li Y, Gu L, Ding J, Chang H, Janantha P, Kalinikos B, Novosad V, Hoffmann A, Wu R 2018 Phys. Rev. Lett. 120 207206Google Scholar
[13] Mackenzie A P, Hicks C W 2017 Nat. Mater. 16 702Google Scholar
[14] Swanson L W, Mcneely D R 1979 Surf. Sci. 83 11Google Scholar
[15] Bao L H, Zhang J X, Zhou S L, Zhang N, Xu H 2011 Chin. Phys. Lett. 28 088101Google Scholar
[16] Futamoto M, Nakazawa M, Kawabe U 1980 Surf. Sci. 100 470Google Scholar
[17] Olsen G H, Cafiero A V 1978 J. Cryst. Growth. 44 287Google Scholar
[18] Weng H M, Zhao J Z, Wang Z J, Fang Z, Dai X 2014 Phys. Rev. Lett. 112 016403Google Scholar
[19] Lu F, Zhao J Z, Weng H M, Fang Z, Dai X 2013 Phys. Rev. Lett. 110 096401Google Scholar
[20] Qin X, Liu X, Huang W, Bettinelli M, Liu X 2017 Chem. Rev. 117 4488Google Scholar
[21] Elkelany K E, Ravoux C, Desmarais J K, Cortona P, Pan Y, Tse J S, Erba A 2018 Phys. Rev. B 97 245118Google Scholar
[22] 包黎红, 那仁格日乐, 特古斯, 张忻, 张久兴 2013 62 196105Google Scholar
Bao L H, Narengerile, Tegus O, Zhang X, Zhang J X 2013 Acta Phys. Sin. 62 196105Google Scholar
[23] Liu H, Zhang X, Ning S, Xiao Y, Zhang J 2017 Vacuum 143 245Google Scholar
[24] 刘洪亮, 张忻, 王杨, 肖怡新, 张久兴 2018 67 048101Google Scholar
Liu H L, Zhang X, Wang Y, Xiao Y X, Zhang J X 2018 Acta Phys. Sin. 67 048101Google Scholar
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