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采用区域熔炼法成功制备出了高质量,高纯度,大尺寸的LaB6单晶体. 系统分析了制备过程中每个参数对LaB6单晶生长的影响,确定了晶体生长最佳工艺为:样品转速为30 r/min,生长速度为810 mm/h. 分析了单晶LaB6 (100) 晶面的热电子发射性能,结果表明,当阴极温度为1873 K时,最大热发射电流密度为44.36 A/cm2;利用 Richardson 直线法求出了绝对零度逸出功和有效逸出功分别为1.99和2.59 eV. 场发射测试结果表明,单晶LaB6场发射单尖最大场发射电流密度达到4.9106 A/cm2,场发射因子为41500 cm-1,表现出良好的场发射性能. 因此单晶LaB6作为热阴极和冷阴极都具有很广阔的应用前景.The high quality, high purity and large size Lanthanum hexaborides (LaB6) single crystals have been successfully grown by optical floating zone method. The optimum crystal growth parameters are listed as follow: sample rotation rate is 30 r/min and the growth rate is 810 mm/h. The largest thermionic emission current density of (100) crystal surface is 44.36 A/cm2 at 1873 K. The work function at absolute zero is calculated to be 1.99 eV by Richardson line method, and the average value of effective work functions at different temperatures are calculated to be 2.59 eV. The field emission characteristic of single crystal LaB6 field emitting single tip show that the maximum field emission current density is 4.9106 Acm-2 and the field enhancement factor is calculated to be 41500 cm-1, indicating excellent field emission performance. Thus, the single crystal is a promising cathode material for practical applications regarding to its excellent thermionic emission or field emission properties.
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Keywords:
- floating zone growth /
- single crystal LaB6 /
- thermionic emission property /
- field emission property
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[49] -
[1] Lafferty J M 1951 J. Appl. Phys. 22 299
[2] Mandrus D, Sales B C, Jin R 2001 Phys. Rev. B 64 012302
[3] [4] [5] Nishitani R, Aono M, TanaKa T, Kawai S, Iwasaki H, Oshima C, Nakamura S 1980 Surf. Sci. 95 341
[6] [7] Futamoto M, Nakazawa M, Kawabe U 1980 Surf. Sci. 100 470
[8] [9] Rokuta E, Yamamoto N, Hasegawa Y, Trenary M, Nagao T, Oshima C, Otani S 1998 Surf. Sci. 416 363
[10] [11] Zhang H, Zhang Q, Zhao G P, Tang J, Zhou O, Qin L C 2005 J. Am. Chem.Soc. 127 13120
[12] [13] Zhang H, Zhang Q, Tang J, Qin L C 2005 J. Am. Chem. Soc. 127 2862
[14] Zhang H, Zhang Q, Tang J, Qin L C 2005 J. Am. Chem. Soc. 127 8002
[15] [16] [17] Late D J, Date K S, More M A, Misra P, Singh B N, Kukreja L M, Dharmadhikari C V, Joag D S 2008 Nanotechnology 19 265605
[18] [19] Late D J, More M A, Misra P, Singh B N, Kukreja L M, Joag D S 2007 Ultramicroscopy 107 825
[20] [21] Olsen G H, Cafiero A V 1978 J. Crystal Growth 44 287
[22] [23] Mituko O 1976 J. Crystal Growth 33 193
[24] Aida T, Fukazawa T 1987 J. Crystal Growth 80 9
[25] [26] [27] Wang S, Pomjakushina E, Shiroka T, Deng G, Nikseresht N, Ruegg C, Conder K 2010 J. Crystal Growth 313 51
[28] [29] Souptel D, Behr G, Ivanenko L, Vinzelberg H, Schumann J 2002 J. Crystal Growth 244 296
[30] [31] Uijttewaal M A, DeWijs G A, Groot R A 2006 J. Phys. Chem. B 110 18459
[32] [33] Gesley M, Swanson L W 1984 Cystal Growth 146 583
[34] [35] Yamamoto N, Rokuta E, Hasegawa Y, Nagao T, Trenary M, Oshima C, Otani S 1996 Surf. Sci. 348 133
[36] [37] Jin X, Liu X S, Huang S R, Cai G H 1995 High Power Laser and Particle Beams 7 555 (in Chinese) [金 晓、刘锡三、黄孙仁、蔡公和 1995 强激光与粒子束 7 555]
[38] Wang H B, Xu Z, Lu H P, Deng R P, Yang X, Gan K Y, Jin X, Li M, Liu X S 2005 High Power Laser and Particle Beams 17 932 (in Chinese) [王汉斌、许 州、卢和平、邓仁培、杨 肖、甘孔银、金晓、黎 明、刘锡三 2005 强激光与粒子束 17 932]
[39] [40] Yao J F, Chen X, Jiang J P, Li J, Gao Y J, Yan S Q, Chen Q L 2002 Vacuum Electronics 1 1 (in Chinese) [姚剑峰、陈 旭、江剑平、李 季、高玉娟、阎肃秋、陈其略 2002 真空电子技术 1 1]
[41] [42] Futamoto M, Nakazawa M and Kawabe U 1980 Surf. Sci. 100 470
[43] [44] Swanson L W, Mcneely D R 1979 Surf. Sci. 83 11
[45] [46] Cheng H, Jiang J P 1987 Cathode Electronics (Xi'an: Northwest Institute of Telecommunication Publishing House) p84 (in Chinese) [承 欢、江剑平 1986 阴极电子学 (西安: 西北电讯工程学院出版社) 第84页]
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[49]
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