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HTL-free carbon-based perovskite solar (PSCs) batteries have the advantages of low cost, simple preparation steps, and high stability, and have broad application prospects. However, the direct contact between the carbon electrode and the active layer causes the photoelectric conversion efficiency of the device to be generally lower than that of other metal electrode perovskite solar cells. Therefore, it is necessary to add a hole-transport layer between the perovskite layer and the electrode to improve the charge transport efficiency and optimize the performance. Poly(3-hexylthiophene) has excellent photoelectric properties and is regarded as one of the suitable hole transport materials for perovskite solar cells. In this paper, P3HT is used as the hole transport layer of the device. Compared with the traditional organic hole-transport layer Spiro-OMeTAD, the P3HT has the advantages of low cost and easy manufacture. However, in the current devices with using P3HT as the hole transport layer, due to the characteristics of the surface morphology and molecular ordering of the P3HT film, the carrier mobility in the film itself is low, resulting in unsatisfactory device performance. Studies have shown that the surface morphology and molecular arrangement of the P3HT film can be changed by doping, and the migration rate of charge-carriers inside the film can be accelerated, thereby improving the photovoltaic performance of the solar cell. In this paper, a printing process is used to print carbon paste on the hole transport layer as the electrode of the device, and spin coating is used to prepare the transport layer. And through the method of doping 1,8-diiodooctane (DIO) in P3HT to optimize the device performance, the photoelectric conversion efficiency of the carbon-based perovskite solar cell is improved, the mobility of holes is improved, and the transportation of electrons is blocked. The reduced interface recombination, the improved interface contact between the carbon electrode and the device, the increased short-circuit current Jsc and the fill factor FF lead the photoelectric conversion efficiency of the device to increase from 14.06% to 15.11%. We test the light stability of the device under the 1000-h continuous illumination in a nitrogen atmosphere, and the conversion efficiency of the device remains above 98%, indicating that the addition of DIO into P3HT improves not only the photoelectric conversion efficiency of the device, but also the stability.
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Keywords:
- perovskite /
- solar cell /
- 3-hexylthiophene /
- 1, 8-diiodooctane
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Google Scholar
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Google Scholar
[3] Kim H S, Lee C R, Im J H, Lee K B, Moehl T, Marchioro A, Moon S J, Humphry-Baker R, Yum J H, Moser J E, Graetzel M, Park N G 2012 Sci. Rep. 2 591
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[8] Abbas H A, Kottokkaran R, Ganapathy B, Samiee M, Zhang L, Kitahara A, Noack M, Dalal V L 2015 APL Mater. 3 506
[9] Wang M J, Li S B, Zhang P, Wang Y F, Li H Q, Chen Z 2015 Chem. Phys. Lett. 639 283
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图 1 钙钛矿太阳能电池器件结构与能级结构 (a) 为有空穴传输层并且基于碳电极的n-i-p结构的钙钛矿太阳能电池结构; (b) 此器件结构中的各个薄膜材料的能级结构
Figure 1. PSCs device structure and energy level diagram: (a) Carbon-based n-i-p PSCs; (b) Energy level diagram.
图 2 钙钛矿薄膜表面形貌 (a), (b), (c) 原子力显微镜(AFM)表征钙钛矿薄膜(HTL-free) (a), 旋涂了空穴传输层P3HT的钙钛矿薄膜(P3HT) (b), 旋涂了添加DIO的空穴传输层P3HT的钙钛矿薄膜(P3HT: DIO) (c)的表面形貌图; (e), (d), (f) 扫面电子显微镜表征钙钛矿薄膜(e), 旋涂了空穴传输层P3HT的钙钛矿薄膜(d), 旋涂了添加DIO的空穴传输层P3HT的钙钛矿薄膜(f)的表面形貌图
Figure 2. Surface morphology of the perovskite films: (a), (b), (c) Atomic force microscopy (AFM) characterization of perovskite film (HTL-free) (a), perovskite film with P3HT (b), perovskite film with P3HT: DIO (c); (d), (e), (f) scanning electron microscopy characterization of perovskite film (HTL-free) (d), perovskite film with P3HT (e), perovskite film with P3HT: DIO (f).
图 3 钙钛矿薄膜、旋涂空穴传输层P3HT的钙钛矿薄膜与旋涂空穴传输层中添加了DIO的P3HT薄膜的光电性能测试 (a) X射线衍射图谱; (b) 通过ITO/PEDT/P3HT结构器件测得的P3HT材料的载流子迁移率曲线; (c) 稳态光致发光曲线; (d) 时间分辨光致发光衰减曲线
Figure 3. Photoelectric performance test of perovskite film, perovskite film with P3HT and perovskite with P3HT: DIO: (a) X-ray diffraction pattern; (b) carrier mobility fitting of the hole-transport layer; (c) steady-state photoluminescence; (d) time-resolved photoluminescence.
图 4 钙钛矿太阳能电池器件性能测试曲线 (a) 钙钛矿太阳能电池的J-V曲线; (b) 外量子效率曲线图
Figure 4. Performance of perovskite solar cell devices: (a) J-V curves of perovskite solar cells; (b) EQE spectra of the perovskite solar cells.
图 5 (a), (b) 旋涂P3HT和P3HT: DIO器件的暗电流测试曲线; (c) 无空穴传输层器件、旋涂P3HT和P3HT: DIO器件的暗电流测试曲线; (d) 无空穴传输层器件、旋涂P3HT和P3HT: DIO器件结构的电化学阻抗谱
Figure 5. (a), (b) The dark current test curves of spin-coated P3HT and P3HT: DIO devices; (c) dark current test curves for holeless transport layer devices, spin-coated P3HT and P3HT: DIO devices.; (d) electrochemical impedance spectra of hole-free transport layer devices, spin-coated P3HT and P3HT:DIO device structures.
图 6 钙钛矿太阳能电池连续光照条件下测试稳定性
Figure 6. The stability of perovskite solar cells under continuous light illumination.
表 1 基于不同空穴传输材料的钙钛矿太阳能电池性能参数
Table 1. Photovoltaic parameters of perovskite solar cell based on different HTLs.
HTM JSC/(mA·cm–2) VOC/V FF/% PCE/% P3HT:DIO 22.39 0.90 74.86 15.11 P3HT 22.15 0.89 71.32 14.06 无 21.07 0.89 71.94 13.48 
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[1] Chapin D M, Fuller C S, Pearson G L 1954 J. Appl. Phys. 25 676
Google Scholar
[2] Kojima A, Teshima K, Shirai Y, Miyasaka T 2009 J. Am. Chem. Soc. 131 6050
Google Scholar
[3] Kim H S, Lee C R, Im J H, Lee K B, Moehl T, Marchioro A, Moon S J, Humphry-Baker R, Yum J H, Moser J E, Graetzel M, Park N G 2012 Sci. Rep. 2 591
Google Scholar
[4] Im J H, Lee C R, Lee J W, Park S W, Park N G 2011 Nanoscale 3 4088
Google Scholar
[5] Liu M, Johnston M B, Snaith H J 2013 Nature 501 395
Google Scholar
[6] Abate A, Leijtens T, Pathak S, Teuscher J, Avolio R, Errico M E, Kirkpatrik J, Ball J M, Docampo P, McPherson I, Snaith H J 2013 PCCP 15 2572
Google Scholar
[7] Furube A, Katoh R, Hara K, Sato T, Murata S, Arakawa H, Tachiya M 2005 J. Phys. Chem. B 109 16406
Google Scholar
[8] Abbas H A, Kottokkaran R, Ganapathy B, Samiee M, Zhang L, Kitahara A, Noack M, Dalal V L 2015 APL Mater. 3 506
[9] Wang M J, Li S B, Zhang P, Wang Y F, Li H Q, Chen Z 2015 Chem. Phys. Lett. 639 283
Google Scholar
[10] Yan W, Li Y, Ye S, Li Y, Rao H, Liu Z, Wang S, Bian Z, Huang C 2016 Nano Res. 9 1600
Google Scholar
[11] Hauch A, Georg A 2002 Electrochim. Acta 46 3457
[12] Ikegami M, Miyoshi K, Miyasaka T, Teshima K, Wei T C, Wan C C, Wang Y Y 2007 Appl. Phys. Lett. 90 153122
Google Scholar
[13] Che M, Zhu L, Zhao Y L, Yao D S, Gu X Q, Song J, Qiang Y H 2016 Mater. Sci. Semicond. Process. 56 29
Google Scholar
[14] Mei A, Li X, Liu L, Ku Z, Liu T, Rong Y, Xu M, Hu M, Chen J, Yang Y, Graetzel M, Han H 2014 Science 345 295
Google Scholar
[15] Liu J, Li N, Dong Q, Li J, Qin C, Wang L 2019 Sci. China Mater. 62 173
Google Scholar
[16] Zhang H, Song K, Zhu L, Meng Q 2020 Carbon 168 372
Google Scholar
[17] Meng F, Zhou Y, Gao L, Li Y, Liu A, Li Y, Zhang C, Fan M, Wei G, Ma T 2021 Mater. Today Energy 19 100590
Google Scholar
[18] Chen R, Feng Y, Zhang C, Wang M, Jing L, Ma C, Bian J, Shi Y 2020 J. Mater. Chem. C 8 9262
Google Scholar
[19] Etgar L, Gao P, Xue Z, Peng Q, Chandiran A K, Liu B, Nazeeruddin M K, Grätzel M 2012 J. Am. Chem. Soc. 134 17396
Google Scholar
[20] Ku Z, Rong Y, Xu M, Liu T, Han H 2013 Sci. Rep. 3 3132
Google Scholar
[21] Liu Z Y, Sun B, Shi T L, Tang Z R, Liao G L 2016 J. Mater. Chem. A 4 10700
Google Scholar
[22] Ghoreishi F S, Ahmadi V, Poursalehi R, SamadPour M, Johansson M B, Boschloo G, Johansson E M J 2020 J. Power Sources 473 228492
Google Scholar
[23] Odabasi C, Yildirim R 2020 Sol. Energy Mater. Sol. Cells 205 110284
Google Scholar
[24] Long C Y, Wang N, Huang K Q, Li H Y, Liu B, Yang J L 2020 Chin. Phys. B 29 048801 8
[25] Zhang F, Yang X, Cheng M, Wang W, Sun L 2016 Nano Energy 20 108
Google Scholar
[26] Wu Z, Liu Z, Hu Z, Hawash Z, Qiu L, Jiang Y, Ono L K, Qi Y 2019 Adv. Mater. 31 1804284
Google Scholar
[27] Jung E H, Jeon N J, Park E Y, Moon C S, Shin T J, Yang T Y, Noh J H, Seo J 2019 Nature 567 511
Google Scholar
[28] Almohammedi A, Khan M T, Benghanem M, Aboud S W, Shkir M, AlFaify S 2020 Mater. Sci. Semicond. Process. 120 105272
Google Scholar
[29] Park M S, Meresa A A, Kwon C M, Kim F S 2019 Polymers 11 1682 11
[30] Kiymaz D, Kiymaz A, Zafer C 2021 Nanotechnology 32 105401
Google Scholar
[31] Su H, Xiao J Y, Li Q H, Peng C, Zhang X X, Mao C, Yao Q, Lu Y J, Ku Z L, Zhong J, Li W, Peng Y, Huang F Z, Cheng Y B 2020 Mater. Sci. Semicond. Process. 107 104809
Google Scholar
[32] Wang G M, Swensen J, Moses D, Heeger A J 2003 J. Appl. Phys. 93 6137
Google Scholar
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