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The performances of metamaterial absorbers can be affected by the incidence angle of electromagnetic wave. It is difficult to design the incidence angle-insensitive metamaterial absorbers. In this paper, we propose a metamaterial absorber with wide-angle incidence based on the equivalent medium theory. The absorber unit consists of a double-sided split resonant ring placed vertically on the ground. The resistors and capacitors are loaded at the opening of the resonant ring. The resistor is used to adjust the equivalent electromagnetic parameters of the metamaterial, and the capacitor is used to control the resonant frequency of the metamaterial and miniaturize the unit. When the transverse electric (TE) plane wave impinges on the surface of the absorber, R = 4000 Ohm and C = 1.5 pF, the proposed absorber can achieve an absorptivity greater than 90% at 1.59 GHz up to an incidence angle reaching 70°. Besides, the absorber can achieve an 85% absorptivity under an incidence angle of 75°. when the transverse magnetic (TM) plane wave impinges on the surface of the absorbers, R = 1200 Ω and C = 1.5 pF, the proposed absorber can achieve an absorptivity of greater than 90% at 1.59 GHz up to a 70°incidence angle. Besides, the absorber can also achieve an absorptivity of 85% up to 75°. The results show that the measurement results are basically consistent with the simulation results. In addition, when the capacitance is changed while the other parameters are fixed, the metamaterial absorber proposed in this paper still has the same wide-angle absorbing performance at the new resonant frequency. In other words, the proposed absorber has broadband operating characteristics. A frequency-tunable metamaterial absorber with wide-angle incidence can be designed based on the aforementioned results. The results in this paper provide a method of tuning capacitance. The opening is set at the other end of the split ring, and the same fixed-value resistor and variable capacitor are loaded on the left opening, and the corresponding DC bias feeder is designed. One end of the DC bias line is directly connected to the ground, and the other end needs to be separately connected to the other DC bias feeder of each unit to realize the control of the variable capacitors of each unit.
[1] Landy N I, Sajuyigbe S, Mock J J, Smith D R, Padilla W J 2008 Phys. Rev. Lett. 100 207402Google Scholar
[2] Wang B X, Zhai X, Wang G Z, Huang W Q, Wang L L 2015 IEEE Photonics J. 7 4600108Google Scholar
[3] Ding F, Cui X, Ge C, Jin Y, He S L 2012 Appl. Phys. Lett. 100 103506Google Scholar
[4] Lin X Q, Mei P, Zhang P C, Chen Z Z D, Fan Y 2016 IEEE Trans. Antennas Propag. 64 4910Google Scholar
[5] Hao J P, Lheurette E, Burgnies L, Okada E, Lippens D 2014 Appl. Phys. Lett. 105 081102Google Scholar
[6] Deng T W, Li Z W, Chen Z N 2017 IEEE Trans. Antennas Propag. 65 5886Google Scholar
[7] Shang Y P, Shen Z X, Xiao S Q 2013 IEEE Trans. Antennas Propag. 61 6022Google Scholar
[8] Rozanov K N 2000 IEEE Trans. Antennas Propag. 48 1230Google Scholar
[9] Chen H T 2012 Opt. Express 20 7165Google Scholar
[10] 顾超, 屈绍波, 裴志斌, 徐卓, 林宝勤, 周航, 柏鹏, 顾巍, 彭卫东, 马华 2011 60 087802Google Scholar
Gu C, Qu S B, Pei Z B, Xu Z, Lin B Q, Zhou H, Bai P, Gu W, Peng W D, Ma H 2011 Acta Phys. Sin. 60 087802Google Scholar
[11] 程用志, 聂彦, 龚荣洲, 王鲜 2013 62 044103Google Scholar
Chen Y Z, Nie Y, Gong R Z, Wang X 2013 Acta Phys. Sin. 62 044103Google Scholar
[12] 熊益军, 王岩, 王强, 王春齐, 黄小忠, 张芬, 周丁 2018 67 084202Google Scholar
Xiong Y J, Wang Y, Wang Q, Wang C Q, Huang X Z, Zhang F, Zhou D 2018 Acta Phys. Sin. 67 084202Google Scholar
[13] 李宇涵, 邓联文, 罗衡, 贺龙辉, 贺君, 徐运超, 黄生祥 2019 68 095201Google Scholar
Li YH, Deng L W, Luo H, He L H, He J, Xu Y C, Huang S X 2019 Acta Phys. Sin. 68 095201Google Scholar
[14] Tao H, Bingham C M, Strikwerda A C, Pilon D, Shrekenhamer, Landy N I, Fan K, Zhang X, Padilla, Averitt 2008 Phys. Rev. B 78 241103Google Scholar
[15] Wang B N, Koschny T, Soukouli Costa M 2009 Phys. Rev. B 80 033108Google Scholar
[16] Lee D, Hwang J G, Lim D, Hara T, Lim S 2016 Sci. Rep. 6 27155Google Scholar
[17] Nguyen T T, Lim S 2017 Sci. Rep. 7 3204Google Scholar
[18] Lim D, Lee D, Lim S 2016 Sci. Rep. 6 39686Google Scholar
[19] Wang J Y, Yang R C, Tian J P, Wei C X, Zhang W M 2018 IEEE Antennas Wirel. Propag. Lett. 17 1242Google Scholar
[20] Amiri M, Tofigh F, Shariati N, Lipman J, Abolhasan M 2020 Sci. Rep. 10 13638Google Scholar
[21] Assimonis S D, Fusco V 2019 Sci. Rep. 9 2082Google Scholar
[22] Huang X T, Lu C H, Rong C C, Liu M H 2018 Opt. Mater. Exp. 8 2520Google Scholar
[23] Singh H S 2020 Microwave Opt. Technol. Lett. 62 718Google Scholar
[24] Abdulkarim Y, Deng L W, Luo H, Huang S X, He L H, Han L Y, Muhammadsharif F F, Altintas O, Sabah C, Karaaslan M 2020 Bull. Mater. Sci. 43 116Google Scholar
[25] Ji S J, Jiang C X, Zhao J, Yang J L, Wang J L, Dai H D 2019 Curr. Appl. Phys. 19 1164Google Scholar
[26] Jin Y, Xiao S S, Mortensen N A, He S L 2011 Opt. Express 19 11114Google Scholar
[27] Feng S M, Halterman K 2012 Phys. Rev. B 86 165103Google Scholar
[28] Zhong S M, He S L 2013 Sci. Rep. 3 2083Google Scholar
[29] 吴雨明, 丁霄, 王任, 王秉中 2020 69 054202Google Scholar
Wu Y M, Ding X, Wang R, Wang B Z 2020 Acta Phys. Sin. 69 054202Google Scholar
[30] Chen X D, Grzegorczyk T M, Wu B I, Pacheco J, Kong J A 2004 Phys. Rev. E 70 016608Google Scholar
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图 3 超材料的等效磁导率虚部和实部以及超材料吸波体反射系数随电阻R的变化 (a) TE波照射时磁导率实部; (b) TE波照射时磁导率虚部; (c) TM波照射时磁导率实部; (d) TM波照射时虚部; (e) TE波照射超材料吸波体反射系数随电阻R的变化; (f) TM波照射超材料吸波体反射系数随电阻R的变化
Figure 3. The imaginary parts and real parts of the equivalent permeability of the metamaterial and the reflection coefficient of the absorber varies with the resistor: (a) Real parts of the equivalent permeability under TE wave; (b) imaginary parts of the equivalent permeability under TE wave; (c) real parts of the equivalent permeability under TM wave; (d) imaginary parts of the equivalent permeability under TM wave; (e) the reflection coefficient of the absorber varies with the resistor under TE wave; (f) the reflection coefficient of the absorber varies with the resistor under TM wave.
表 1 文献工作性能比较
Table 1. Performance comparison among this work and other literatures.
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[1] Landy N I, Sajuyigbe S, Mock J J, Smith D R, Padilla W J 2008 Phys. Rev. Lett. 100 207402Google Scholar
[2] Wang B X, Zhai X, Wang G Z, Huang W Q, Wang L L 2015 IEEE Photonics J. 7 4600108Google Scholar
[3] Ding F, Cui X, Ge C, Jin Y, He S L 2012 Appl. Phys. Lett. 100 103506Google Scholar
[4] Lin X Q, Mei P, Zhang P C, Chen Z Z D, Fan Y 2016 IEEE Trans. Antennas Propag. 64 4910Google Scholar
[5] Hao J P, Lheurette E, Burgnies L, Okada E, Lippens D 2014 Appl. Phys. Lett. 105 081102Google Scholar
[6] Deng T W, Li Z W, Chen Z N 2017 IEEE Trans. Antennas Propag. 65 5886Google Scholar
[7] Shang Y P, Shen Z X, Xiao S Q 2013 IEEE Trans. Antennas Propag. 61 6022Google Scholar
[8] Rozanov K N 2000 IEEE Trans. Antennas Propag. 48 1230Google Scholar
[9] Chen H T 2012 Opt. Express 20 7165Google Scholar
[10] 顾超, 屈绍波, 裴志斌, 徐卓, 林宝勤, 周航, 柏鹏, 顾巍, 彭卫东, 马华 2011 60 087802Google Scholar
Gu C, Qu S B, Pei Z B, Xu Z, Lin B Q, Zhou H, Bai P, Gu W, Peng W D, Ma H 2011 Acta Phys. Sin. 60 087802Google Scholar
[11] 程用志, 聂彦, 龚荣洲, 王鲜 2013 62 044103Google Scholar
Chen Y Z, Nie Y, Gong R Z, Wang X 2013 Acta Phys. Sin. 62 044103Google Scholar
[12] 熊益军, 王岩, 王强, 王春齐, 黄小忠, 张芬, 周丁 2018 67 084202Google Scholar
Xiong Y J, Wang Y, Wang Q, Wang C Q, Huang X Z, Zhang F, Zhou D 2018 Acta Phys. Sin. 67 084202Google Scholar
[13] 李宇涵, 邓联文, 罗衡, 贺龙辉, 贺君, 徐运超, 黄生祥 2019 68 095201Google Scholar
Li YH, Deng L W, Luo H, He L H, He J, Xu Y C, Huang S X 2019 Acta Phys. Sin. 68 095201Google Scholar
[14] Tao H, Bingham C M, Strikwerda A C, Pilon D, Shrekenhamer, Landy N I, Fan K, Zhang X, Padilla, Averitt 2008 Phys. Rev. B 78 241103Google Scholar
[15] Wang B N, Koschny T, Soukouli Costa M 2009 Phys. Rev. B 80 033108Google Scholar
[16] Lee D, Hwang J G, Lim D, Hara T, Lim S 2016 Sci. Rep. 6 27155Google Scholar
[17] Nguyen T T, Lim S 2017 Sci. Rep. 7 3204Google Scholar
[18] Lim D, Lee D, Lim S 2016 Sci. Rep. 6 39686Google Scholar
[19] Wang J Y, Yang R C, Tian J P, Wei C X, Zhang W M 2018 IEEE Antennas Wirel. Propag. Lett. 17 1242Google Scholar
[20] Amiri M, Tofigh F, Shariati N, Lipman J, Abolhasan M 2020 Sci. Rep. 10 13638Google Scholar
[21] Assimonis S D, Fusco V 2019 Sci. Rep. 9 2082Google Scholar
[22] Huang X T, Lu C H, Rong C C, Liu M H 2018 Opt. Mater. Exp. 8 2520Google Scholar
[23] Singh H S 2020 Microwave Opt. Technol. Lett. 62 718Google Scholar
[24] Abdulkarim Y, Deng L W, Luo H, Huang S X, He L H, Han L Y, Muhammadsharif F F, Altintas O, Sabah C, Karaaslan M 2020 Bull. Mater. Sci. 43 116Google Scholar
[25] Ji S J, Jiang C X, Zhao J, Yang J L, Wang J L, Dai H D 2019 Curr. Appl. Phys. 19 1164Google Scholar
[26] Jin Y, Xiao S S, Mortensen N A, He S L 2011 Opt. Express 19 11114Google Scholar
[27] Feng S M, Halterman K 2012 Phys. Rev. B 86 165103Google Scholar
[28] Zhong S M, He S L 2013 Sci. Rep. 3 2083Google Scholar
[29] 吴雨明, 丁霄, 王任, 王秉中 2020 69 054202Google Scholar
Wu Y M, Ding X, Wang R, Wang B Z 2020 Acta Phys. Sin. 69 054202Google Scholar
[30] Chen X D, Grzegorczyk T M, Wu B I, Pacheco J, Kong J A 2004 Phys. Rev. E 70 016608Google Scholar
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