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The leap in communication technology in recent years has brought new challenges to the compactness, modulation speed, working bandwidth and control efficiency of modulation equipment. The discovery of graphene has led the two-dimensional materials to develop rapidly, and a series of new materials have continuously emerged, such as MXene, black phosphorus, transition metal sulfides, etc. These new two-dimensional materials have excellent nonlinear optical effects, strong light-matter interaction, and ultra-wide working bandwidth. Using their thermo-optic effect, nonlinear effect and the combination with optical structure, the needs of ultra-fast modulation in optical communication can be met. Compact, ultra-fast, and ultra-wide will become the tags for all-optical modulation of two-dimensional materials in the future. This article focuses on all-optical devices based on thermo-optical effects and non-linear effects of two-dimensional materials, and introduces fiber-type Mach-Zehnder interferometer structures, Michelson interferometer structures, polarization interferometer structures, and micro-ring structures. In this paper, the development status of all-optical devices is discussed from the perspectives of response time, loss, driving energy, extinction ratio, and modulation depth. Finally, we review the latest developments, analyze the challenges and opportunities faced by all-optical devices, and propose that all-optical devices should be developed in the direction of ring resonators and finding better new two-dimensional materials. We believe that all-optical devices will maintain high-speed development, acting as a cornerstone to promote the progress of all-optical systems.
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Keywords:
- all-optical devices /
- two-dimensional material /
- optical nonlinear effect /
- thermo-optic effect
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图 1 (a)石墨烯[27], (b) TMDs[27], (c) BP[27]和(d) MXene[78]的原子结构及带隙结构; (e)各材料带隙分布图[27,78]
Figure 1. Atomic structures and band structures of (a) graphene[27], (b) TMDs[27], (c) BP[27]and (d) MXene[78]. (e) Distribution diagram of the bandgap of each material[27]. Reprinted by permission from Ref. [27]. Copyright Nature Photonics. Reprinted by permission from Ref. [78]. Copyright Advanced Materials.
图 2 (a)基于MXene材料的MZI全光调制器的实验装置[100]; (b) MXene Ti3C2Tx纳米片的高放大倍数HRTEM原子晶格结构[100]; (c)沉积有MXenes的微纳光纤的光学显微镜图像[100]; (d) Ti3C2Tx和Ti3AlC2的拉曼光谱图[100]
Figure 2. (a) Experimental setup of an MZI all-optical modulator based on MXene materials; (b) high-magnification HRTEM atomic lattice structure of MXene nanosheet; (c) optical microscopy image of microfibers deposited with MXenes; (d) Raman spectrum of Ti3C2Tx and Ti3AlC2. Reprinted by permission from Ref. [100]. Copyright Advanced Materials.
图 3 (a)两个输出端口的干涉频谱[100]; (b)在122 mW的控制光(泵)功率下的干涉条纹[100]; (c)相移与不同控制光功率的关系[100]
Figure 3. (a) Interference spectra of two output ports; (b) interference fringes at a control light (pump) power of 122 mW; (c) phase shift versus different control light (pump) powers. Reprinted by permission from Ref. [100]. Copyright Advanced Materials.
图 4 (a) 980 nm控制光波形图[100]; (b)信号光开关转换及其拟合曲线[100]; (c)错误输出[100]; (d)信号光为40 Hz时的输出[100]
Figure 4. (a) Waveform of the 980 nm control light (pump); (b) signal light switch conversion and its fitting curve; (c) output breaking; (d) waveforms of signal light at 40 Hz. Reprinted by permission from Ref. [100]. Copyright Advanced Materials.
图 5 (a) MI结构的全光开关实验装置[104]; (b)控制光和信号光的波形及拟合曲线[104]; (c)控制光调制频率改变时的信号光波形[104]
Figure 5. (a) All-optical switch experimental device with MI structure; (b) waveforms of control light and signal light and their fitting curves; (c) waveforms of signal light when control light modulation frequency changes. Reprinted by permission from Ref. [104]. Copyright Journal of Materials Chemistry C.
图 6 (a) MI双芯光纤三维结构示意图[108]; (b)双芯光纤横截面[108]; (c), (d)双芯光纤抛光区域的横截面和抛光表面[108]; (e)双芯光纤输出光强度监视[108]
Figure 6. (a) Schematic diagram of the three-dimensional structure of MI twin-core fiber; (b) cross section of twin-core fiber; (c) cross section and (d) polished surface of the polished area of twin-core fiber; (e) twin-core fiber output light intensity monitoring. Reprinted by permission from Ref. [108]. Copyright Optics Letters.
图 7 (a) PI结构全光调制实验装置[106]; (b)信号光波形, 插图为控制光波形[106]; (c)单个全光信号切换以及相应的拟合曲线[106]; (d)长期测量的输出信号光[106]
Figure 7. (a) PI structure all-optical modulation experimental device; (b) signal light waveform, illustration: control light waveform; (c) single all optical signal switching and corresponding fitting curve; (d) output signal light for long-term measurement. Reprinted by permission from Ref. [106]. Copyright Chinese Optics Letters.
图 8 (a)基于MFR的全光开光实验装置[107]; (b) GMFR制备过程[107]; (c) GMFR光学显微镜图像[107]; (d)控制光开(黑色)和控制光关(蓝色)的GMFR透射光谱, 红线表示FBG过滤的反射峰[107]
Figure 8. (a) All-optical switch experimental device; (b) GMFR preparation process; (c) GMFR optical microscope image; (d) GMFR transmission spectrum of controlled light on (black) and controlled light off (blue), the red line represents the reflection peak of FBG filtering. Reprinted by permission from Ref. [107]. Copyright Applied Physics Letters.
图 10 (a)基于锑材料微纳光纤的全光阈值器实验装置[76]; (b)光纤激光源脉冲的波形[76]; (c)噪声脉冲的波形[76]; (d)光纤激光源和噪声源合并后的脉冲波形[76]
Figure 10. (a) Experimental diagram of all-optical thresholder; (b) pulse profile of fiber laser source; (c) noise pulse tracking; (d) merger pulse trajectory includes fiber laser source and noise source. Reprinted by permission from Ref. [76]. Copyright 2D Materials.
图 12 (a)基于石墨烯光克尔效应的全光相位调制器实验装置[118]; (b) GCM的光学显微镜图像[118]; (c) GCM的传输频谱[118]; (d)顶部: 成对的开关脉冲; 中部: GCM的光纤的脉冲调制信号; 底部: 包含GCM的MZI脉冲调制信号[118]; (e)对于包含GCM的损耗调制(红色实线), MZI调制器相位调制(红色实线)以及MZI的损耗调制(蓝色虚线)的输出信号的MD与峰值开关功率的关系[118]
Figure 12. (a) Experimental device of all-optical phase modulator based on graphene optical Kerr effect; (b) optical microscope image of GCM; (c) transmission spectrum of GCM; (d) top: paired switching pulses; middle: pulse modulation signal of GCM fiber; bottom: MZI pulse modulation signal containing GCM; (e) for loss modulation including GCM (solid red line), MZI modulator phase modulation (solid red line) and MZI loss modulation (blue dotted line) output signal modulation depth and peak switching power relationship. Reprinted by permission from Ref. [118]. Copyright Optica.
图 14 (a)具有BP涂层的微纳光纤光学显微镜图像[122]; (b)基于BP四波混频的波长转换器示意图[122]; (c)系统输出光谱图[122]; (d)不同RF频率下的消光比和转换效率[122]; (e)不同RF频率下对应的FWM光频谱细节[122]
Figure 14. (a) Optic microscope image of BP-coated microfiber; (b) schematic diagram of wavelength converter based on BP four-wave mixing; (c) system output spectrum; (d) extinction ratio and conversion at different RF frequencies efficiency; (e) details of the corresponding FWM optical spectrum at different RF frequencies. Reprinted by permission from Ref. [122]. Copyright Acs Photonics.
表 1 二维材料特性总结
Table 1. Properties of different 2D materials.
二维材料
种类能隙/eV 厚度/Å 导热系数
/W·m–1·K-1饱和吸收强度Is/GW·cm–2 三阶极化率
$ {\rm{Im}}\chi^{(3)} $/esu非线性折射率n2/cm2·W–1 载流子弛豫
时间Ref. graphene 0 3.35 1600—5300 583 –8.7 × 10–15 10–7 200 fs—1 ps [84—86] TMDs 1—2 6.04—6.91 19—112 381—590 –(0.145—1.38) × 10–14 10–12 1 ps—400 ps [84, 85] BP 0.3—2.2 5.24—5.29 6—89 459 –7.85 × 10–15 6.8 × 10–9 360 fs—1.36 ps [84, 89, 87] MXene $ < 0.2 $ — 298—460 10 10–13 –10–16 — [82, 88] 表 2 基于二维材料热光效应的全光纤器件总结
Table 2. Comparison of all-fiber devices based on two-dimensional material thermo-optic effect.
全光器件结构 二维材料类型 耦合形式 上升时间 下降时间 消光比/dB 控制效率/$\pi$·mW–1 Ref. MZI graphene MF 4.00 ms 1.40 ms 20 0.091 [101] Mxene MF 4.10 ms 3.55 ms 18.53 0.061 [100] phosphorene MF 2.50 ms 2.10 ms 17 0.029 [75] boron MF 0.48 ms 0.69 ms 10.5 0.01329 [90] WS2 MF 7.30 ms 3.50 ms 15 0.0174 [102] MI antimonene MF 3.20 ms 2.90 ms 25 0.049 [103] bismuthene MF 1.56 ms 1.53 ms 25 0.076 [104] MXene MF 2.30 ms 2.10 ms 27 0.034 [105] graphene SPTCF 55.80 ms 15.50 ms 7 0.0102 [108] PI MoS2 TF 324.5 μs 353.1 μs 10 NA [106] micro-ring graphenen MF 294.7 μs 212.2 μs 13 0.115 [107] MXene MF 306 μs 301 μs 12.9 0.196 [109] 注: MF, microfiber. TF, Thin film. SPTCF, side-polished twin-core fiber. 表 3 基于不同二维材料非线性效应的全光器件总结
Table 3. Comparison of all-optical devices based on nonlinear effects of different two-dimensional materials.
非线性效应类型 二维材料类型 耦合
形式上升时间 下降时间 消光比/dB 调制深度/% 控制效率
π·mW–1转换效率/dB 调谐范围/nm Ref. SA graphene MF ~0 ~0 — 73.08, 79.11, 81.38
(1310 nm, 1550 nm, 1610 nm)— — — [125] BP MF ~0.2 ns ~0.4 ns — 4.7 — — — [116] Kerr effect graphene MF 3 μs 100 μs — — — — — [118] bismuthine MF — — 22 — — — — [123] Topological insulators MF — — 14 — 0.0125 — — [124] BP MF — — 26 — 0.0081 — — [122] antimonene MF — — 12 — 0.0071 126 FWM bismuthine MF — 17 — — -65 4 [123] Topological insulators MF — — — — — -34 6.4 [124] BP MF — — 10 — — -60 3 [122] antimonene MF — — 13 — — -65 5.5 [126] MXene MF — — 13 — — -59 5 [127] graphene MF — — 13 — — -59 5 [128] 注: MF, microfiber. SA, saturable absorption. FWM, four-wave-mixing. -
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