低维半导体偏振光探测器研究进展

魏钟鸣; 夏建白

doi:10.7498/aps.68.20191002

摘要

偏振光探测在遥感成像、环境监测、医疗检测和军事设备等领域都具有很好的应用价值, 目前已经有一系列偏振探测和成像产品. 随着信息器件进一步小型化、集成化, 基于新型低维材料的偏振光探测器可以直接利用材料本征的各向异性对偏振光进行感知, 在未来偏振光探测领域有很好的应用前景. 很多二维/一维半导体材料, 例如: 黑磷, ReS₂, GaTe, GeSe, GeAs及ZrS₃等, 都具有较强的本征面内各向异性, 可以用于高性能偏振光探测器. 基于此类低维半导体材料设计的不同结构类型的偏振光探测器已经覆盖了紫外、可见以及红外等多个波段. 本文总结了近年来相关领域的研究进展和我们课题组的一些工作.

关键词:

Abstract

Polarized photodetection technology has good application value in the fields of remote sensing imaging, environmental monitoring, medical detection and military equipment. Polarized photodetectors based on low-dimensional materials can use the natural anisotropy of materials to detect polarized information. Some two-dimensional materials have strong in-plane anisotropy due to their low-symmetrical crystal structure, such as black-phosphorus, black-arsenic, ReS₂, GaTe, GeSe, GeAs, and TiS₃. These anisotropic two-dimensional materials are appropriate for the working medium of polarized photodetectors. Numerous researchs focused on polarized photodetectors with different materials and device structures and our works are introduced. Polarized photodetectors based on such low-dimensional materials have realized a broadband photodetection, including ultraviolet, visible, and infrared lights.

Keywords:

作者及机构信息

中国科学院半导体研究所, 半导体超晶格国家重点实验室, 北京　100083

通信作者: 魏钟鸣, zmwei@semi.ac.cn

基金项目: 国家自然科学基金(批准号: 61622406).

Authors and contacts

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Corresponding author: Wei Zhong-Ming, zmwei@semi.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61622406).

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施引文献

图 1 黑磷的特性^[50]　(a)原子结构; (b)典型的偏振拉曼光谱; (c)三层黑磷的能带结构和理论计算的各向异性吸收

Fig. 1. Characteristics of black-phosphorus^[50](Reproduced with permission, Copyright 2016, American Chemical Society): (a) Atomic structure; (b) typical polarized Raman spectra; (c) band structure of trilayer black-phosphorus and theoretical polarized absorption

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图 2 (a)圆形电极的偏振光探测器的显微镜照片^[52]; (b) 沿扶手和锯齿方向400−1700 nm波长范围内黑磷的偏振光电流响应^[52]; (c) 黑磷/MoS₂异质结偏振光探测器^[54]; (d)等离激元修饰的黑磷偏振光探测器^[29]

Fig. 2. (a) Optical image of the polarized-light detector with the circular electrode, (b) polarized photoresponse along armchair and zigzag orientations under 400−1700 nm illumination of black-phosphorus (reproduced with permission^[52], Copyright 2015, Springer Nature); (c) polarized-light detector based on the black-phosphorus/MoS₂ heterojunction(reproduced with permission^[54], Copyright 2018, Springer Nature); (d) polarized-light detectorenhanced by the plasmonic structure(reproduced with permission^[29], Copyright 2018, American Chemical Society).

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图 3 原子结构　(a) ReS₂^[32]; (b) WTe₂^[71]

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图 4 (a)偏振光电测试示意图^[34]; (b) 极坐标下ReS₂的偏振光吸收和光电流^[33]; (c) ReS₂/ReSe₂异质结偏振光响应^[79]; (d) WTe₂偏振光探测性能^[35]

Fig. 4. (a) Schematic of polarized photoelectric test(reproduced with permission^[34], Copyright 2016, American Chemical Society); (b) photocurrent and absorption of ReS₂ in the polar coordinates(Reproduced with permission^[33], Copyright 2016, John Wiley and Sons); (c) polarized photoresponse of ReS₂/ReSe₂ heterojunction(reproduced with permission^[79], Copyright 2018, John Wiley and Sons); (d) polarized photoresponse of WTe₂(reproduced with permission^[35], Copyright 2018, John Wiley and Sons).

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图 5 (a) GaTe的晶体结构^[80]; (b) TlSe的STEM图像^[37]; (c) 基于TlSe的偏振光探测器的角分辨光电流^[37]

Fig. 5. (a) Crystal structure of GaTe(reproduced with permission^[80], Copyright 2016, American Chemical Society); (b) STEM image of TlSe and (c) photocurrent of the polarized photodetector based on TlSe (reproduced with permission^[37], Copyright 2018, American Chemical Society).

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图 6 (a) MX晶体的原子结构^[83]; (b) GeS₂晶体的原子结构^[41]; (c) SnS沿不同方向的光电流响应速度^[38]; (d) GeSe₂对450 nm偏振光响应^[42]

Fig. 6. (a) Crystal structure of MX (reproduced with permission^[83], Copyright 2015, AIP Publishing); (b) crystal structure of GeS₂(reproduced with permission^[41], Copyright 2019, John Wiley and Sons); (c) response times of SnS along different directions(reproduced with permission^[38], Copyright 2017, Royal Society of Chemistry); (d) polarized photocurrent of GeSe₂ under the 450 nm illumination(reproduced with permission^[42], Copyright 2018, American Chemical Society).

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图 7 (a) GeAs, SiAs, GeP和SiP的晶体结构; (b) GeAs₂的晶体结构^[45]

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图 8 (a) ZrS₃的光学图像^[46]; (b) ZrS₃的晶体结构^[46]; (c) KP₁₅原子结构示意图^[99]

Fig. 8. (a) Optical image of ZrS₃ and (b) crystal structure of ZrS₃(reproduced with permission^[46], Copyright 2019, John Wiley and Sons); (c) crystal structure of KP₁₅(reproduced with permission^[99], Copyright 2018, American Chemical Society).

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图 9 (a) GeSe的偏振光吸收谱^[40]; (b) 不同方向的偏振光下准一维ZrS₃纳米带的吸收光谱^[46]; (c)准一维ZrS₃纳米带在450 nm和532 nm的激光下的偏振光电流^[46]

Fig. 9. (a) Polarization-resolved absorption spectra of GeSe(reproduced with permission^[40], Copyright 2017, American Chemical Society); (b) absorption spectra of ZrS₃ nanoribbon under polarized light in different directions and (c) polarized photocurrent of ZrS₃ nanoribbon under 450 nm and 532 nm laser illumination(reproduced with permission^[46], Copyright 2019, John Wiley and Sons).

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图 10 (a) GeSe对808 nm光照的偏振光电流^[40]; (b) GeAs偏振光吸收光谱图^[43]; (c) GeAs在520 nm和830 nm偏振光照射下的光响应极坐标图^[43]; (d) GeAs 30 mV栅压下角度依赖的空间分辨光响应分布图^[43]

Fig. 10. (a) Polarized photocurrent of GeSe under the 808 nm laser illumination(reproduced with permission^[40], Copyright 2017, American Chemical Society); (b) polarization-resolved absorption spectra of GeAs, (c) polarization-sensitive photocurrents plotted with the linear-polarization laser of 520 and 830 nm of GeAs in the polar coordinates, and (d) polarization-dependent photocurrent mapping of GeAs device under 30 mV gate voltage and the linear-polarization laser (reproduced with permission^[43], Copyright 2018, American Chemical Society).

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表 1 低维半导体材料的各向异性光电性能

Table 1. Anisotropic optoelectronic properties of low-dimensional semiconductors.

	禁带宽度/eV	载流子迁移率/cm²·V^–1·s^–1	光响应强度	二向色性比值	参考文献
黑磷	0.3 (体材料) 1.5 (单层)	1000 (空穴, x)600 (空穴, y)	14.2 mA/W	8.7 (1550 nm)	[29]
黑砷	0.3 (体材料)1— 1.5 (单层)	376.7 (电子, zigzag)1.5 (电子, armchair) 60.7 (空穴, zigzag)10606 (空穴, armchair)			[14,30]
锑烯	1.3—1.7			100 (3.2 eV)	[31]
ReS₂	1.4 (体材料)	23.1 (电子, DS-chains方向)14.8 (电子, 垂直DS-chains方向)	10³ A·W^–1 (532 nm)	~ 4	[32,33]
ReSe₂	1.17—1.2	10	1.5 mA·W^–1 (633 nm)	2 (633 nm)	[34]
MoTe₂	外尔半金属		110 mA·W^–1 (1064 nm)		[10]
WTe₂	外尔半金属			4.9 (514.5 nm)	[35]
GaTe	1.7	0.2 (空穴)	10⁴ A·W^–1 (532 nm)		[36]
TlSe	0.73		1.48 A·W^–1 (633 nm)	2.56 (633 nm)	[37]
SnS	1.3	20 (zisgzag)μ_zigzag/μ_armchair ≈ 1.7	365 A·W^–1 (808 nm)	1.49 (808 nm)	[38,39]
GeSe	1.34 (体材料) 1.7 (单层)		4.25 A·W^–1	2.16 (808 nm)	[40]
GeS₂	> 3			2.1 (325 nm)	[41]
GeSe₂	2.74			3.4 (450 nm)	[42]
GeAs	0.83 (体材料) 2.07 (单层)			4.4 (808 nm)	[43]
GeP	0.51 (体材料) 1.68 (单层)	电导率比值: 1.52	3.11—0.43 A·W^–1	1.83 (532 nm)	[44]
GeAs₂	0.98 (体材料) 1.62 (单层)	2.5 (空穴, a)1.3 (空穴, b)		2	[45]
ZrS₃	1.79 (体材料)		230 m A·W^–1 (520 nm)	2.55 (520 nm)	[46]
TiS₃	1.13		2500 A·W^–1 (808 nm)	4	[47]
α-MoO₃	2.7	0.06–0.09 (电子, b)0.03—0.04 (电子, c)	67.9 A·W^–1	5 (254 nm)	[12]

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