Advances in applications of positron annihilation spectroscopy to investigating semiconductor microstructures

Cao Xing-Zhong; Song Li-Gang; Jin Shuo-Xue; Zhang Ren-Gang; Wang Bao-Yi; Wei Long

doi:10.7498/aps.66.027801

Abstract

Positron annihilation spectroscopy has unique advantage for detecting the micro-defects and microstructures in materials,especially for investigating the negatively charged defects such as cation vacancies in semiconductors.It is a powerful tool to characterize the important features for vacancy-type defects localized electron states within the forbidden energy gap and cation vacancy which provides the key information about the type and distribution of microdefects. Positron annihilation lifetime and Doppler broadening spectroscopy are the major methods of analyzing the vacancy formation,evolution and distribution mechanism.Importantly,the slow positron beam technique can provide the dependences of surface,defect and interface microstructure information on depth distribution in semiconductor thin film.Vacancy and impurity elements can change the ambient electron density in material.They also induce the middle band,which will have dramatic effects on optical and electrical performance.And the variation of electron density will exert furtherinfluences on the positron-electron annihilation mechanism and process.For the fundamental experiments in semiconductors,fabrication technology,thermal treatment,ion implantation/doping,irradiation etc, positron annihilation spectroscopy technology has been extensively applied to detecting the detailed electron density and momentum distribution,and gained the information about microstructure and defects.It can guide the fundamental researches in experiment and give optimal design of the technology and properties about semiconductors.In principle, defect concentrations can be derived and an indication can be obtained about the nature of the defect.Results are presented showing that cation vacancies can be easily detected.Also charge states and defect levels in the band gap are accessible.By combining the positron annihilation spectroscopy with optical spectroscopies or other experimental methods,it is possible to give detailed identifications of the defects and their chemical surroundings.The positron annihilation spectroscopy technology is a very special and effective nuclear spectroscopy analysis method in studying semiconductor microstructure.In this review,the research progress in applications of positron annihilation spectroscopy technology to semiconductors is reported,which focuses on the experimental results from the Positron Research Platform located in Institute of High Energy Physics,Chinese Academy of Sciences.Under different growth modes and ways of treating semiconductors,the experimental results about the internal micro-defect formation mechanism of material, evolution mechanism,and defect feature research progress are reviewed Future challenges including the analysis of electropositivity vacancy (i.e.oxygen vacancy) and of multi-ion implantation phenomena are also presented new technologies such as digitization and new theory will make the positron annihilation spectroscopy portable and reliable.

Keywords:

positron annihilation spectroscopy /
semiconductor /
electron density and momentum distribution /
microstructure

Authors and contacts

1.
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
2.
College of Science, Wuhan University of Science and Technology, Wuhan 430000, China

Corresponding author: Cao Xing-Zhong, caoxzh@ihep.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 0275076, 10575112, 60606011, 10835006, 11175191, 11475193, 11475197, 11575205, 11505192).

References

[1]	Cheng L J, Yeh C K 1973 Solid State Commun. 12 529
[2]	Arifov P U, Arutyunov N Y, Ilyasov A Z 1977 Sov. Phys. Semi.-Ussr 11 907
[3]	Zhang L H, Cheng B, Zhang J, Zhang L J, Guo W F, Liu J D, Zhang L N, Ye B J 2012 Sci. Sin.:Phys. Mech. Astron. 42 1217 (in Chinese)[张礼红, 成斌, 张杰, 张丽娟, 郭卫锋, 刘建党, 张礼楠, 叶邦角2012中国科学:物理学力学天文学42 1217]
[4]	Barbiellini B, Genoud P, Jarlborg T 1991 J. Phys.:Condens. Matter 3 7631
[5]	Yu W Z, Yuan J P 1999 Physics 28 429 (in Chinese)[郁伟中, 袁佳平1999物理28 429]
[6]	Share G H, Murphy R J, Skibo J G, Smith D M, Hudson H S, Lin R P, Shih A Y, Dennis B R, Schwartz R A, Kozlovsky B 2003 Astrophys. J. 595 85
[7]	Zhang Z M, Wang B Y, Ma C X, Zhou C L, Wei L, Zhang T B, Ren S X 2004 Nucl. Electron. Detect. Technol. 24 490 (in Chinese)[章志明, 王宝义, 马创新, 周春兰, 魏龙, 张天保, 任绍霞2004核电子学与探测技术24 490]
[8]	Cheng G D, Cao X Z, Wu J P, Wu H B, Yang J, Jiang X P, Yu R S, Wang B Y 2013 Mater. Rev. 27 133 (in Chinese)[成国栋, 曹兴忠, 吴建平, 伍海彪, 杨静, 姜小盼, 于润升, 王宝义2013材料导报27 133]
[9]	Zubiaga A, Garcia J A, Plazaola F, Tuomisto F, Zuniga-Perez J, Munoz-Sanjose V 2007 Phys. Rev. B 75 10
[10]	Arutyunov N Y, Elsayed M, Krause-Rehberg R, Emtsev V V, Oganesyan G A, Kozlovski V V 2013 J. Phys.:Condes. Matter 25 28
[11]	Kawasuso A, Yoshikawa M, Itoh H, Chiba T, Higuchi T, Betsuyaku K, Redmann F, Krause-Rehberg R 2005 Phys. Rev. B 72 6
[12]	Hu W G, Wang Z, Su B F, Dai Y Q, Wang S J, Zhao Y W 2004 Phys. Lett. A 332 286
[13]	Shao Y D, Wang Z, Dai Y Q, Zhao Y W, Tang F Y 2007 Mater. Lett. 61 1187
[14]	Suzuki R, Ohdaira T, Uedono A, Kobayashi Y 2002 Appl. Surf. Sci. 194 89
[15]	Cao X Z, Wang B Y, Zhang Z M, Wei C F, Zhang T B, Xue D S, Wei L 2004 Nucl. Sci. Tech. 27 435 (in Chinese)[曹兴忠, 王宝义, 章志明, 魏存峰, 张天保, 薛德胜, 魏龙2004核技术27 435]
[16]	Wang T M, Wang B Y, Chen H M, Yu R S, Wei L, Zhang T B, Yu W Z, He Y J 1999 Physics 28 573 (in Chinese)[王天民, 王宝义, 陈红民, 于润升, 魏龙, 张天保, 郁伟中, 何元金1999物理28 573]
[17]	Wang P, Cao X Z, Ma Y Y, Qin X B, Wang B Y, Ma C X, Wei L 2006 High Energ. Phys. Nucl. 30 1036 (in Chinese)[王平, 曹兴忠, 马雁云, 秦秀波, 王宝义, 马创新, 魏龙2006高能物理与核物理30 1036]
[18]	Ma Y Y, Pei S L, Zhang Z M, Cao X Z, Wang S H, Wang P, Wang B Y, Wei C F, Ma C X, Wei L 2006 High Energ. Phys. Nucl. 30 166 (in Chinese)[马雁云, 裴士伦, 章志明, 曹兴忠, 王书鸿, 王平, 王宝义, 魏存峰, 马创新, 魏龙2006高能物理与核物理30 166]
[19]	Cao X Z, Wang B Y, Yu R S, Wei C F, Xue D S, Wei L 2004 High Energ. Phys. Nucl. 28 560 (in Chinese)[曹兴忠, 王宝义, 于润升, 魏存峰, 薛德胜, 魏龙2004高能物理与核物理28 560]
[20]	Cao X Z, Wang B Y, Wang P, Ma Y Y, Qin X B, Wei L 2006 High Energ. Phys. Nucl. 30 1196 (in Chinese)[曹兴忠, 王宝义, 王平, 马雁云, 秦秀波, 魏龙2006高能物理与核物理30 1196]
[21]	Wang B Y, Cao X Z, Wei C F, Zhang Z M, Ma C X, Zhang T B, Wei L 2007 Nucl. Sci. Tech. 30 247(in Chinese)[王宝义, 曹兴忠, 魏存峰, 章志明, 马创新, 张天保, 魏龙2007核技术30 247]
[22]	Wei C F, Wang B Y, Wang P, Cao X Z, Zhang Z M, Ma Y Y, Xue D S, Wei L 2006 High Energ. Phys. Nucl. 30 1010 (in Chinese)[魏存峰, 王宝义, 王平, 曹兴忠, 章志明, 马雁云, 薛德胜, 魏龙2006高能物理与核物理30 1010]
[23]	Hu Y C, Cao X Z, Li Y X, Zhang P, Jin S X, Lu E Y, Yu R S, Wei L, Wang B Y 2015 Acta Phys. Sin. 64 247804 (in Chinese)[胡远超, 曹兴忠, 李玉晓, 张鹏, 靳硕学, 卢二阳, 于润升, 魏龙, 王宝义2015 64 247804]
[24]	Alivisatos A P 1996 J. Phys. Chem. 100 13226
[25]	Morkoc H, Strite S, Gao G B, Lin M E, Sverdlov B, Burns M 1994 J. Appl. Phys. 76 1363
[26]	Liu X W, Zhou K B, Wang L, Wang B Y, Li Y D 2009 J. Am. Chem. Soc. 131 3140
[27]	Khalid M, Ziese M, Setzer A, Esquinazi P, Lorenz M, Hochmuth H, Grundmann M, Spemann D, Butz T, Brauer G, Anwand W, Fischer G, Adeagbo W A, Hergert W, Ernst A 2009 Phys. Rev. B 80 035331
[28]	Ma Z W, Liu L X, Xie Y Z, Su Y R, Zhao H T, Wang B Y, Cao X Z, Qin X B, Li J, Yang Y H, Xie E Q 2011 Thin Solid Films 519 6349
[29]	Wan D Y, Wang B Y, Zhou C L, Ma C X, Wang Y T, Zhang R G, Wei L 2004 Phys. B:Condens. Matter 344 489
[30]	Yu Y B, Zhao J J, Han X, Zhang Y, Qin X B, Wang B Y 2013 Chin. J. Catal. 34 283
[31]	Hao W C, Pan F, Wang T M, Zhou C L, Wei L 2006 Chin. Phys. Lett. 23 223
[32]	Tripathi B, Singh F, Avasthi D K, Bhati A K, Das D, Vijay Y K 2008 J. Alloys Compd. 454 97
[33]	Wang X Q, Liu S T, Ma D Y, Zheng X T, Chen G, Xu F J, Tang N, Shen B, Zhang P, Cao X Z, Wang B Y, Huang S, Chen K J, Zhou S Q, Yoshikawa A 2012 Appl. Phys. Lett. 101 171905
[34]	Yang X L, Zhu W X, Wang C D, Fang H, Yu T J, Yang Z J, Zhang G Y, Qin X B, Yu R S, Wang B Y 2009 Appl. Phys. Lett. 94 151907
[35]	Pasang T, Namratha K, Guagliardo P, Byrappa K, Ranganathaiah C, Samarin S, Williams J F 2015 Mater. Res. Express 2 045502
[36]	Liang L H, Li Z X, Wang B Y, Wu W M 2011 J. Guangxi Univ. (Nat. Sci. Ed.) 36 863(in Chinese)[梁立欢, 李卓昕, 王宝义, 吴伟明2011广西大学学报:自然科学版36 863]
[37]	Padma N, Maheshwari P, Bhattacharya D, Tokas R B, Sen S, Honda Y, Basu S, Pujari P K, Rao T V 2016 ACS Appl. Mater. Inter. 8 3376
[38]	Hao X P, Wang B Y, Yu R S, Wei L, Wang H, Zhao D G, Hao W C 2008 Chin. Phys. Lett. 25 1034
[39]	Li D X, Qin X B, Zheng L R, Li Y X, Cao X Z, Li Z X, Yang J, Wang B Y 2013 Chin. Phys. B 22 037504
[40]	Zhan P, Wang W P, Liu C, Hu Y, Li Z C, Zhang Z J, Zhang P, Wang B Y, Cao X Z 2012 J. Appl. Phys. 111 033501
[41]	Jia Y, Oshima T, Yamada A, Konagai M, Takahashi K, Tanigawa S, Wei L 1993 Jpn. J. Appl. Phys. Part 1-Regular Papers Short Notes & Review Papers 32 1884
[42]	Ren H T, Xiang G, Gu G X, Zhang X, Wang W J, Zhang P, Wang B Y, Cao X Z 2012 J. Nanomater. 202 1
[43]	Lee J L, Wei L, Tanigawa S, Kawabe M 1991 Appl. Phys. Lett. 58 1524
[44]	Yang A L, Song H P, Liang D C, Wei H Y, Liu X L, Jin P, Qin X B, Yang S Y, Zhu Q S, Wang Z G 2010 Appl. Phys. Lett. 96 151904
[45]	Li Z X, Wang D N, Wang B Y, Xue D S, Wei L, Qin X B 2010 Acta Phys. Sin. 59 8915 (in Chinese)[李卓昕, 王丹妮, 王宝义, 薛德胜, 魏龙, 秦秀波2010 59 8915]
[46]	Sedivy L, Cizek J, Belas E, Grill R, Melikhova O 2016 Sci. Rep. 6 20641
[47]	Ning S, Zhan P, Wang W P, Li Z C, Zhang Z J 2014 Chin. Phys. B 23 127503
[48]	Liu X F, Iqbal J, Gong W M, Yang S L, Gao R S, Zeng F, Yu R H, He B, Hao Y P, Hao X P 2009 J. Appl. Phys. 105 093931
[49]	Zhao C J, Liu Y, Zhang J Y, Sun L, Ding L, Zhang P, Wang B Y, Cao X Z, Yu G H 2012 Appl. Phys. Lett. 101 072404
[50]	Zhao C J, Ding L, Zhao Z D, Zhang P, Cao X Z, Wang B Y, Zhang J Y, Yu G H 2013 Appl. Phys. A 116 845
[51]	Maheshwari P, Dutta D, Mukherjee S, Madhu P K, Mote K R, Pujari P K 2016 Phys. Chem. Chem. Phys. 18 12886
[52]	Marchiori C F N, Yamamoto N A D, Matos C F, Kujala J, Macedo A G, Tuomisto F, Zarbin A J G, Koehler M, Roman L S 2015 Appl. Phys. Lett. 106 133301
[53]	Yu R S, Maekawa M, Kawasuso A, Wang B Y, Wei L 2012 Nucl. Instrum. Methods Phys. Res., Sect. B 270 47
[54]	Qin X B, Zhang P, Liang L H, Zhao B Z, Yu R S, Wang B Y, Wu W M 2011 J. Phys. Conf. Ser. 262 012051
[55]	Wei L, Tanigawa S, Uedono A, Wada K, Nakanishi H 1994 Jpn. J. Appl. Phys. Part 1-Regular Papers Brief Communications & Review Papers 33 33
[56]	Hu X J, Shen Y G, Hao X P, Wang B Y 2009 Diamond Relat. Mater. 18 210
[57]	Zhang B, Zhang P, Wang J, Zhu F, Cao X Z, Wang B Y, Liu C L 2013 Nucl. Phys. Rev. 30 471
[58]	Xu N N, Li G P, Wang Y B, Zhong H P, Li T J, Gong H F, Wang B Y, Li Z X 2012 Nucl. Sci. Tech. 35 98 (in Chinese)[许楠楠, 李公平, 王云波, 钟火平, 李天晶, 龚恒凤, 王宝义, 李卓昕2012核技术35 98]
[59]	Liu Y, Wang G, Wang S C, Yang J H, Chen L, Qin X Q, Song B, Wang B Y, Chen X L 2011 Phys. Rev. Lett. 106 087205
[60]	Zhang M L, Yang R X, Li Z X, Cao X Z, Wang B Y, Wang X H 2013 Acta Phys. Sin. 62 017103 (in Chinese)[张明兰, 杨瑞霞, 李卓昕, 曹兴忠, 王宝义, 王晓晖2013 62 017103]
[61]	Pan S, Mandal A, Roychowdhury A, Gupta S 2015 Appl. Phys. A 120 221
[62]	Blakie D E, Zalloum O H Y, Wojcik J, Irving E A, Knights A P, Mascher P, Simpson P J 2009 J. Appl. Phys. 105 053517
[63]	Zhang L J, Wang T, Li J, Hao Y P, Liu J D, Zhang P, Cheng B, Zhang Z W, Wang B Y, Ye B J 2012 Thin Solid Films 525 68
[64]	Onuma T, Chichibu S F, Uedono A, Yoo Y Z, Chikyow T, Sota T, Kawasaki M, Koinuma H 2004 Appl. Phys. Lett. 85 5586
[65]	Tuomisto F, Kuittinen T, Zając M, Doradziński R, Wasik D 2014 J. Cryst. Growth 403 114
[66]	Elsayed M, Krause-Rehberg R, Korff B, Ratschinski I, Leipner H S 2013 Eur. Phys. J. B 86 358
[67]	Hao X P, Yu R S, Wang B Y, Chen H L, Wang D N, Ma C X, Wei L 2007 Appl. Surf. Sci. 253 6868
[68]	Uedono A, Tanigawa S, Ogura A, Ono H, Suzuki R, Ohdaira T, Mikado T 2000 J. Appl. Phys. 87 1659
[69]	Kar S, Biswas S, Chaudhuri S, Nambissan P M G 2005 Phys. Rev. B 72 075338
[70]	Wei L, Tabuki Y, Tanigawa S 1993 Jpn. J. Appl. Phys. Part 1-Regular Papers Short Notes & Review Papers 32 7
[71]	Liu Z M, Yi Y, Li J H, Woo S I, Wang B Y, Cao X Z, Li Z X 2013 Chem. Commun. 49 7726
[72]	He C Z, She X D, Peng Z, Zhong J P, Liao S Q, Gong W, Liao J H, Kong L X 2015 Phys. Chem. Chem. Phys. 17 12175
[73]	Ma C X, Zhou C L, Qin X B, Wang B Y, Wei L, Kui R X, Qian H J, Su R, Zhong J 2004 Nucl. Sci. Tech. 27 943 (in Chinese)[马创新, 周春兰, 秦秀波, 王宝义, 魏龙, 奎热西, 钱海杰, 苏润, 钟俊2004核技术27 943]

Cited By

[1]	Cheng L J, Yeh C K 1973 Solid State Commun. 12 529
[2]	Arifov P U, Arutyunov N Y, Ilyasov A Z 1977 Sov. Phys. Semi.-Ussr 11 907
[3]	Zhang L H, Cheng B, Zhang J, Zhang L J, Guo W F, Liu J D, Zhang L N, Ye B J 2012 Sci. Sin.:Phys. Mech. Astron. 42 1217 (in Chinese)[张礼红, 成斌, 张杰, 张丽娟, 郭卫锋, 刘建党, 张礼楠, 叶邦角2012中国科学:物理学力学天文学42 1217]
[4]	Barbiellini B, Genoud P, Jarlborg T 1991 J. Phys.:Condens. Matter 3 7631
[5]	Yu W Z, Yuan J P 1999 Physics 28 429 (in Chinese)[郁伟中, 袁佳平1999物理28 429]
[6]	Share G H, Murphy R J, Skibo J G, Smith D M, Hudson H S, Lin R P, Shih A Y, Dennis B R, Schwartz R A, Kozlovsky B 2003 Astrophys. J. 595 85
[7]	Zhang Z M, Wang B Y, Ma C X, Zhou C L, Wei L, Zhang T B, Ren S X 2004 Nucl. Electron. Detect. Technol. 24 490 (in Chinese)[章志明, 王宝义, 马创新, 周春兰, 魏龙, 张天保, 任绍霞2004核电子学与探测技术24 490]
[8]	Cheng G D, Cao X Z, Wu J P, Wu H B, Yang J, Jiang X P, Yu R S, Wang B Y 2013 Mater. Rev. 27 133 (in Chinese)[成国栋, 曹兴忠, 吴建平, 伍海彪, 杨静, 姜小盼, 于润升, 王宝义2013材料导报27 133]
[9]	Zubiaga A, Garcia J A, Plazaola F, Tuomisto F, Zuniga-Perez J, Munoz-Sanjose V 2007 Phys. Rev. B 75 10
[10]	Arutyunov N Y, Elsayed M, Krause-Rehberg R, Emtsev V V, Oganesyan G A, Kozlovski V V 2013 J. Phys.:Condes. Matter 25 28
[11]	Kawasuso A, Yoshikawa M, Itoh H, Chiba T, Higuchi T, Betsuyaku K, Redmann F, Krause-Rehberg R 2005 Phys. Rev. B 72 6
[12]	Hu W G, Wang Z, Su B F, Dai Y Q, Wang S J, Zhao Y W 2004 Phys. Lett. A 332 286
[13]	Shao Y D, Wang Z, Dai Y Q, Zhao Y W, Tang F Y 2007 Mater. Lett. 61 1187
[14]	Suzuki R, Ohdaira T, Uedono A, Kobayashi Y 2002 Appl. Surf. Sci. 194 89
[15]	Cao X Z, Wang B Y, Zhang Z M, Wei C F, Zhang T B, Xue D S, Wei L 2004 Nucl. Sci. Tech. 27 435 (in Chinese)[曹兴忠, 王宝义, 章志明, 魏存峰, 张天保, 薛德胜, 魏龙2004核技术27 435]
[16]	Wang T M, Wang B Y, Chen H M, Yu R S, Wei L, Zhang T B, Yu W Z, He Y J 1999 Physics 28 573 (in Chinese)[王天民, 王宝义, 陈红民, 于润升, 魏龙, 张天保, 郁伟中, 何元金1999物理28 573]
[17]	Wang P, Cao X Z, Ma Y Y, Qin X B, Wang B Y, Ma C X, Wei L 2006 High Energ. Phys. Nucl. 30 1036 (in Chinese)[王平, 曹兴忠, 马雁云, 秦秀波, 王宝义, 马创新, 魏龙2006高能物理与核物理30 1036]
[18]	Ma Y Y, Pei S L, Zhang Z M, Cao X Z, Wang S H, Wang P, Wang B Y, Wei C F, Ma C X, Wei L 2006 High Energ. Phys. Nucl. 30 166 (in Chinese)[马雁云, 裴士伦, 章志明, 曹兴忠, 王书鸿, 王平, 王宝义, 魏存峰, 马创新, 魏龙2006高能物理与核物理30 166]
[19]	Cao X Z, Wang B Y, Yu R S, Wei C F, Xue D S, Wei L 2004 High Energ. Phys. Nucl. 28 560 (in Chinese)[曹兴忠, 王宝义, 于润升, 魏存峰, 薛德胜, 魏龙2004高能物理与核物理28 560]
[20]	Cao X Z, Wang B Y, Wang P, Ma Y Y, Qin X B, Wei L 2006 High Energ. Phys. Nucl. 30 1196 (in Chinese)[曹兴忠, 王宝义, 王平, 马雁云, 秦秀波, 魏龙2006高能物理与核物理30 1196]
[21]	Wang B Y, Cao X Z, Wei C F, Zhang Z M, Ma C X, Zhang T B, Wei L 2007 Nucl. Sci. Tech. 30 247(in Chinese)[王宝义, 曹兴忠, 魏存峰, 章志明, 马创新, 张天保, 魏龙2007核技术30 247]
[22]	Wei C F, Wang B Y, Wang P, Cao X Z, Zhang Z M, Ma Y Y, Xue D S, Wei L 2006 High Energ. Phys. Nucl. 30 1010 (in Chinese)[魏存峰, 王宝义, 王平, 曹兴忠, 章志明, 马雁云, 薛德胜, 魏龙2006高能物理与核物理30 1010]
[23]	Hu Y C, Cao X Z, Li Y X, Zhang P, Jin S X, Lu E Y, Yu R S, Wei L, Wang B Y 2015 Acta Phys. Sin. 64 247804 (in Chinese)[胡远超, 曹兴忠, 李玉晓, 张鹏, 靳硕学, 卢二阳, 于润升, 魏龙, 王宝义2015 64 247804]
[24]	Alivisatos A P 1996 J. Phys. Chem. 100 13226
[25]	Morkoc H, Strite S, Gao G B, Lin M E, Sverdlov B, Burns M 1994 J. Appl. Phys. 76 1363
[26]	Liu X W, Zhou K B, Wang L, Wang B Y, Li Y D 2009 J. Am. Chem. Soc. 131 3140
[27]	Khalid M, Ziese M, Setzer A, Esquinazi P, Lorenz M, Hochmuth H, Grundmann M, Spemann D, Butz T, Brauer G, Anwand W, Fischer G, Adeagbo W A, Hergert W, Ernst A 2009 Phys. Rev. B 80 035331
[28]	Ma Z W, Liu L X, Xie Y Z, Su Y R, Zhao H T, Wang B Y, Cao X Z, Qin X B, Li J, Yang Y H, Xie E Q 2011 Thin Solid Films 519 6349
[29]	Wan D Y, Wang B Y, Zhou C L, Ma C X, Wang Y T, Zhang R G, Wei L 2004 Phys. B:Condens. Matter 344 489
[30]	Yu Y B, Zhao J J, Han X, Zhang Y, Qin X B, Wang B Y 2013 Chin. J. Catal. 34 283
[31]	Hao W C, Pan F, Wang T M, Zhou C L, Wei L 2006 Chin. Phys. Lett. 23 223
[32]	Tripathi B, Singh F, Avasthi D K, Bhati A K, Das D, Vijay Y K 2008 J. Alloys Compd. 454 97
[33]	Wang X Q, Liu S T, Ma D Y, Zheng X T, Chen G, Xu F J, Tang N, Shen B, Zhang P, Cao X Z, Wang B Y, Huang S, Chen K J, Zhou S Q, Yoshikawa A 2012 Appl. Phys. Lett. 101 171905
[34]	Yang X L, Zhu W X, Wang C D, Fang H, Yu T J, Yang Z J, Zhang G Y, Qin X B, Yu R S, Wang B Y 2009 Appl. Phys. Lett. 94 151907
[35]	Pasang T, Namratha K, Guagliardo P, Byrappa K, Ranganathaiah C, Samarin S, Williams J F 2015 Mater. Res. Express 2 045502
[36]	Liang L H, Li Z X, Wang B Y, Wu W M 2011 J. Guangxi Univ. (Nat. Sci. Ed.) 36 863(in Chinese)[梁立欢, 李卓昕, 王宝义, 吴伟明2011广西大学学报:自然科学版36 863]
[37]	Padma N, Maheshwari P, Bhattacharya D, Tokas R B, Sen S, Honda Y, Basu S, Pujari P K, Rao T V 2016 ACS Appl. Mater. Inter. 8 3376
[38]	Hao X P, Wang B Y, Yu R S, Wei L, Wang H, Zhao D G, Hao W C 2008 Chin. Phys. Lett. 25 1034
[39]	Li D X, Qin X B, Zheng L R, Li Y X, Cao X Z, Li Z X, Yang J, Wang B Y 2013 Chin. Phys. B 22 037504
[40]	Zhan P, Wang W P, Liu C, Hu Y, Li Z C, Zhang Z J, Zhang P, Wang B Y, Cao X Z 2012 J. Appl. Phys. 111 033501
[41]	Jia Y, Oshima T, Yamada A, Konagai M, Takahashi K, Tanigawa S, Wei L 1993 Jpn. J. Appl. Phys. Part 1-Regular Papers Short Notes & Review Papers 32 1884
[42]	Ren H T, Xiang G, Gu G X, Zhang X, Wang W J, Zhang P, Wang B Y, Cao X Z 2012 J. Nanomater. 202 1
[43]	Lee J L, Wei L, Tanigawa S, Kawabe M 1991 Appl. Phys. Lett. 58 1524
[44]	Yang A L, Song H P, Liang D C, Wei H Y, Liu X L, Jin P, Qin X B, Yang S Y, Zhu Q S, Wang Z G 2010 Appl. Phys. Lett. 96 151904
[45]	Li Z X, Wang D N, Wang B Y, Xue D S, Wei L, Qin X B 2010 Acta Phys. Sin. 59 8915 (in Chinese)[李卓昕, 王丹妮, 王宝义, 薛德胜, 魏龙, 秦秀波2010 59 8915]
[46]	Sedivy L, Cizek J, Belas E, Grill R, Melikhova O 2016 Sci. Rep. 6 20641
[47]	Ning S, Zhan P, Wang W P, Li Z C, Zhang Z J 2014 Chin. Phys. B 23 127503
[48]	Liu X F, Iqbal J, Gong W M, Yang S L, Gao R S, Zeng F, Yu R H, He B, Hao Y P, Hao X P 2009 J. Appl. Phys. 105 093931
[49]	Zhao C J, Liu Y, Zhang J Y, Sun L, Ding L, Zhang P, Wang B Y, Cao X Z, Yu G H 2012 Appl. Phys. Lett. 101 072404
[50]	Zhao C J, Ding L, Zhao Z D, Zhang P, Cao X Z, Wang B Y, Zhang J Y, Yu G H 2013 Appl. Phys. A 116 845
[51]	Maheshwari P, Dutta D, Mukherjee S, Madhu P K, Mote K R, Pujari P K 2016 Phys. Chem. Chem. Phys. 18 12886
[52]	Marchiori C F N, Yamamoto N A D, Matos C F, Kujala J, Macedo A G, Tuomisto F, Zarbin A J G, Koehler M, Roman L S 2015 Appl. Phys. Lett. 106 133301
[53]	Yu R S, Maekawa M, Kawasuso A, Wang B Y, Wei L 2012 Nucl. Instrum. Methods Phys. Res., Sect. B 270 47
[54]	Qin X B, Zhang P, Liang L H, Zhao B Z, Yu R S, Wang B Y, Wu W M 2011 J. Phys. Conf. Ser. 262 012051
[55]	Wei L, Tanigawa S, Uedono A, Wada K, Nakanishi H 1994 Jpn. J. Appl. Phys. Part 1-Regular Papers Brief Communications & Review Papers 33 33
[56]	Hu X J, Shen Y G, Hao X P, Wang B Y 2009 Diamond Relat. Mater. 18 210
[57]	Zhang B, Zhang P, Wang J, Zhu F, Cao X Z, Wang B Y, Liu C L 2013 Nucl. Phys. Rev. 30 471
[58]	Xu N N, Li G P, Wang Y B, Zhong H P, Li T J, Gong H F, Wang B Y, Li Z X 2012 Nucl. Sci. Tech. 35 98 (in Chinese)[许楠楠, 李公平, 王云波, 钟火平, 李天晶, 龚恒凤, 王宝义, 李卓昕2012核技术35 98]
[59]	Liu Y, Wang G, Wang S C, Yang J H, Chen L, Qin X Q, Song B, Wang B Y, Chen X L 2011 Phys. Rev. Lett. 106 087205
[60]	Zhang M L, Yang R X, Li Z X, Cao X Z, Wang B Y, Wang X H 2013 Acta Phys. Sin. 62 017103 (in Chinese)[张明兰, 杨瑞霞, 李卓昕, 曹兴忠, 王宝义, 王晓晖2013 62 017103]
[61]	Pan S, Mandal A, Roychowdhury A, Gupta S 2015 Appl. Phys. A 120 221
[62]	Blakie D E, Zalloum O H Y, Wojcik J, Irving E A, Knights A P, Mascher P, Simpson P J 2009 J. Appl. Phys. 105 053517
[63]	Zhang L J, Wang T, Li J, Hao Y P, Liu J D, Zhang P, Cheng B, Zhang Z W, Wang B Y, Ye B J 2012 Thin Solid Films 525 68
[64]	Onuma T, Chichibu S F, Uedono A, Yoo Y Z, Chikyow T, Sota T, Kawasaki M, Koinuma H 2004 Appl. Phys. Lett. 85 5586
[65]	Tuomisto F, Kuittinen T, Zając M, Doradziński R, Wasik D 2014 J. Cryst. Growth 403 114
[66]	Elsayed M, Krause-Rehberg R, Korff B, Ratschinski I, Leipner H S 2013 Eur. Phys. J. B 86 358
[67]	Hao X P, Yu R S, Wang B Y, Chen H L, Wang D N, Ma C X, Wei L 2007 Appl. Surf. Sci. 253 6868
[68]	Uedono A, Tanigawa S, Ogura A, Ono H, Suzuki R, Ohdaira T, Mikado T 2000 J. Appl. Phys. 87 1659
[69]	Kar S, Biswas S, Chaudhuri S, Nambissan P M G 2005 Phys. Rev. B 72 075338
[70]	Wei L, Tabuki Y, Tanigawa S 1993 Jpn. J. Appl. Phys. Part 1-Regular Papers Short Notes & Review Papers 32 7
[71]	Liu Z M, Yi Y, Li J H, Woo S I, Wang B Y, Cao X Z, Li Z X 2013 Chem. Commun. 49 7726
[72]	He C Z, She X D, Peng Z, Zhong J P, Liao S Q, Gong W, Liao J H, Kong L X 2015 Phys. Chem. Chem. Phys. 17 12175
[73]	Ma C X, Zhou C L, Qin X B, Wang B Y, Wei L, Kui R X, Qian H J, Su R, Zhong J 2004 Nucl. Sci. Tech. 27 943 (in Chinese)[马创新, 周春兰, 秦秀波, 王宝义, 魏龙, 奎热西, 钱海杰, 苏润, 钟俊2004核技术27 943]

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