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为了探索高分子有机场效应晶体管(OFET)中高分子自组织机理与电荷传输的关联性,采用同步辐射掠入射X射线衍射技术研究了高分子OFET中以高度区域规则的聚(3-己基噻吩)(RR-P3HT)为代表的半导体层的结晶行为及微观结构组织变化,及其引起的高分子半导体电荷传输机理.研究发现,采用自组装单分子层(SAMs)技术进行界面修饰,可以完善绝缘层与RR-P3HT半导体层之间的界面效果.SAMs的形成改善了界面,可以有效地控制上层RR-P3HT半导体层的结晶性及微观结构,使较多的噻吩环面垂直于衬底、得到π-π堆积方向平行于衬底的二维微晶粒薄片结构,这种微观结构有效地形成了二维共轭电荷传输通道,完善了在RR-P3HT工作层生长过程中的自组织机理;并且对于RR-P3HT半导体工作层来说,慢速生长过程比快速生长过程更有利于有效的二维共轭微晶粒薄片生长,更能完善RR-P3HT工作层生长过程中的自组织机理.
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关键词:
- 高度区域规则的聚(3-己基噻吩)有机场效应晶体管 /
- 同步辐射掠入射X射线衍射 /
- 自组织机理 /
- 微观结构
The crystallization and microstructure change of self-organization and the related conduction mechanisms of polymer semiconductor active thin layer in polymer organic field-effect transistors (OFET) are investigated by synchrotron radiation grazing incident X-ray diffraction (GIXRD) for understanding the relationships between polymer self-organization and charge carry. The change of the crystalline microstructure of RR-P3HT clarifies the effect of SAMs for improving the interface between the insulator layer and the organic semiconductor layer. The self-organiztion of RR-P3HT modified by SAMs improves the crystalliztion to pack form the thiophene rings along the perpendicular direction of substrate and results in that the π-π interchains are stacked to parallel the substrate. The two-dimensional charge transport is improved. Furthermore, we find that two-dimensional, conjugated, and self-organized crystalline lamellae are easier to gain with slow grown film than with fast grown film.-
Keywords:
- regioregular poly(3-hexylthiophene) organic field-effect transistors /
- synchrotron radiation grazing incident X-ray diffraction /
- self-organization /
- microstructure
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[21] Loo Y 2007 AIChE Journal 53 1066
[22] Kline R J, Mcgehee M D, Toney M F 2006 Nature Materials 5 222
[23] Chang J F, Sun B, Breiby D W, Nielsen M M, Slling T I, Giles M, McCulloch I, Sirringhaus H 2004 Chem. Mater. 16 4772
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[26] Yang H, LeFevre S W, Ryu C Y, Bao Z 2007 Appl. Phys. Lett.90 172116
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[1] Yuan G C, Xu Z, Zhao S L, Zhang F J, Huang J Z, Huang J Y, Tian X Y, Xu X R 2008 Chin. Phys. B 17 3822
[2] Yuan G C, Xu Z, Zhao S L, Zhang F J, Jiang W W, Song D D, Zhu H N, Li S Y, Huang J Y, Huang H, Xu X R 2008 Chin. Phys. B 17 1887
[3] Tian X Y, Xu Z, Zhao S L, Zhang F J, Xu X R, Yuan G C, Li J, Sun Q J 2008 Chin. Phys. B 19 018103
[4] Killampalli A S, Engstrom J R 2006 Appl. Phys. Lett. 88 143125
[5] DiBenedetto S A, Facchetti A, Ratner M A, Marks T J 2009 Adv. Mater. 21 1407
[6] Possanner S K, Zojer K, Pacher P, Zojer E, Schürrer F 2009 Adv. Func. Mater. 19 958
[7] Sirringhaus H 2009 Proceedings of the IEEE 97 1570
[8] Bao Z, Dodabalapur A, Lovinger A J 1996 Appl. Phys. Lett. 69 4108
[9] Sirringhaus H, Brown P J, Friend R H, Nielsen M M, Bechgaard K, Langeveld-Voss B M W, Spiering A J H, Janssen R A J, Meijer E W, Herwig P, de Leeuw D M 1999 Nature 401 685
[10] Lan Y K, Huang C 2008 J. Phys. Chem. B 112 14857
[11] Ong B S, Wu Y, Liu P, Gardner S 2004 J. Am. Chem. Soc. 126 3378
[12] Jiang X M, Jia Q J, Zheng W L, Liu P, Xi D C, Jiang Z M, Wang X 2000 High Energy Phys. Nucl. Phys. 24 424 (in Chinese) [姜晓明、贾全杰、郑文莉、刘 鹏、冼鼎昌、蒋最敏、王 迅 2000 高能物理与核物理 24 424]
[13] Cowley R A, Ryan T W 1987 J. Phys. D: Appl. Phys. 20 61
[14] Gay J M, Stocker P, Rhemore F 1993 J. Appl. Phys 73 816
[15] Fuoss P H, Liang K S, Eisenberger P 1989 Synchrotron Radiation Research: Advances in Surface Science( New York: Plenum Press)
[16] Xia Z F, Qiu X L, Zhu J Q, Zhang Z W 2002 Piezoelectrics and Acoustooptics 24 208 (in Chinese) [夏钟福、邱勋林、朱伽倩、张冶文2002 压电与声光 24 208]
[17] Mcculloch I, Heeney M, Bailey C, Genevicius K, Macdonald I, Shkunov M, Sprarrowe D, Wagnger R, Zhang W, Chabinyc M L, Kline R J, Mcgehee M D, Toney M F 2006 Nature Materials 5 328
[18] Oss C J V, Giese Jr R F, Good R J 1990 Langmuir 6 1711
[19] Zhang J D, Mo Z S 2009 University Chem. 24 1(in Chinese) [张吉东、莫志深2009大学化学24 1]
[20] Kim D H, Park Y D, Jang Y, Yang H, Kim Y H, Han J I, Moon D G, Park S, Chang T, Chang C, Joo M, Ryu C Y 2005 Adv. Funct. Mater. 15 77
[21] Loo Y 2007 AIChE Journal 53 1066
[22] Kline R J, Mcgehee M D, Toney M F 2006 Nature Materials 5 222
[23] Chang J F, Sun B, Breiby D W, Nielsen M M, Slling T I, Giles M, McCulloch I, Sirringhaus H 2004 Chem. Mater. 16 4772
[24] Sun B, Kang C Y, Li R P, Liu Z L, Tang J, Xu P S, Pan G Q 2009 Nucl. Tech. 32 492 (in Chinese) [孙 柏、康朝阳、李锐鹏、刘忠良、唐 军、徐彭寿、潘国强 2009核技术32 492]
[25] Verilhac J M, Blevennec G L, Djurado D, Rieutord F, Chouiki M, Travers J P, Pron A 2006 Synth. Met. 156 815
[26] Yang H, LeFevre S W, Ryu C Y, Bao Z 2007 Appl. Phys. Lett.90 172116
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