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Nanomagnetic logic has the advantages in low power, non-volatility, and room temperature operation, however, low power on-chip clocking is the requirement of its integration. An on-chip clocking structure for a nanomagnetic logic circuit using exchange interaction is proposed in this work. This scheme is to use the Oersted field generated by current-carrying copper wire to magnetize ferromagnetic film cladding and then to switch the magnetization orientation of nanomagnets by the exchange interaction between magnetic layers. Simulation results demonstrate that the proposed scheme can reduce the power dissipation by 5/6 and the marginal spray field by 2/3 compared with the ferromagnetic yoked clocking that uses the external field to switch the magnetization. Therefore, it can reduce the power consumption and the risk of crosstalk. In addition, micromagnetic simulation verifies that nanomagnetic array laid on the proposed clocking can work functionally.
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Keywords:
- nanomagnetic logic /
- on-chip clocking /
- exchanging interaction
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[1] Duan C G 2009 Progress in Physics 29 215 (in Chinese) [段纯刚 2009 物理学进展 29 215]
[2] Dobson J 2008 Nature Nanotech. 3 139
[3] Lou J Y, Jiang X S, Xu T J, Liang D L, Jiao F J, Gao L 2012 Rare Metals 31 507
[4] Zhang D, Zhai Y, Zhai H R 2007 Chin. Phys. B 16 1725
[5] Liu H F, Ali S S, Han X F 2014 Chin. Phys. B 23 077501
[6] Imre A, Csaba G, Ji L, Orlov A, Bernstein G H, Porod W 2006 Science 311 205
[7] Yang X K, Cai L, Zhang M L, Duan X H, Wang Z 2013 Acta Electron. Sin. 41 1609 (in Chinese) [杨晓阔, 蔡理, 张明亮, 段小虎, 王卓 2013 电子学报 41 1609]
[8] Yang X K, Cai L, Kang Q, Bai P, Zhao X H, Feng C W, Zhang L S 2011 Acta Phys. Sin. 60 098503 (in Chinese) [杨晓阔, 蔡理, 康强, 柏鹏, 赵晓辉, 冯朝文, 张立森 2011 60 098503]
[9] Orlov A, Imre A, Csaba G, Ji L, Porod W, Bernstein G H 2008 J. Nanoelect. Optoelectr. 3 1
[10] Lambson B, Gu Z, Carlton D, Dhuey S, Scholl A, Doran A, Young A, Bokor J 2012 Appl. Phys. Lett. 100 152406
[11] Lyle A, Harms J, Klein T, Lentsch A, Klemm A, Martens D, Wang J P 2011 AIP Adv. 1 042177
[12] Colci M, Johnson M 2013 IEEE Trans. Nanotechnol. 12 824
[13] Yang X K, Cai L, Wang J H, Huang H T, Zhao X H, Li Z C, Liu B J 2012 Acta Phys. Sin. 61 047502 (in Chinese) [杨晓阔, 蔡理, 王久洪, 黄宏图, 赵晓辉, 李政操, 刘保军 2012 61 047502]
[14] Yang X K, Cai L, Kang Q, Li Z C, Chen X Y, Zhao X H 2012 Acta Phys. Sin. 61 097503 (in Chinese) [杨晓阔, 蔡理, 康强, 李政操, 陈祥叶, 赵晓辉 2012 61 097503]
[15] Alam M T, Siddiq M J, Bernstein G H, Niemier M, Porod W, Hu X S 2010 IEEE Trans. Nanotechnol. 9 348
[16] Alam M T, Kurtz S J, Siddiq M, Niemier M T, Bernstein G H, Hu X S, Porod W 2012 IEEE Trans. Nanotechnol. 11 273
[17] Li P, Csaba G, Niemier M, Hu X S, Nahas J, Porod W, Bernstein G H 2013 J. Appl. Phys. 113 17B906
[18] Atulasimha J, Bandyopadhyay S 2010 Appl. Phys. Lett. 97 173105
[19] Roy K, Bandyopadhyay S, Atulasimha J 2012 J. Appl. Phys. 112 023914
[20] Bhowmik D, You L, Salahuddin S 2013 Nature Nanotechnol. 24 1
[21] Zhu T 2014 Chin. Phys. B 23 047504
[22] Stöhr J, Siegmann H C 2010 Magnetism: From Fundamentals to Nanoscale Dynamics (Beijing: World Publishing Corporation) pp68-79, 167, 637, 681-687.
[23] Liu W, Liu X H, Cui W B, Gong W J, Zhang Z D 2013 Chin. Phys. B 22 027104
[24] Yang X K, Cai L, Huang H T, Bai P, Peng W D 2011 Micro & Nano Lett. 6 353
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