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In this paper, an LD (laser diode) end-pumped continuous-wave Nd:YVO4 self-Raman laser at 1175 nm is reported. The doping concentration and structure of the self-Raman crystals are optimized to reduce the thermal effects of the crystal, and a high-efficient diode-end-pumped continuous-wave self-Raman laser operated at 1175 nm is demonstrated. Finally, the thermal effects are efficiently improved by using a double-end diffusion-bonded composite Nd:YVO4 crystal as a gain medium. An output power up to 3.4 W of the first-order Stokes line 1175 nm is achieved at the incident diode pump power of 25.5 W, corresponding to a diode-to-Stokes optical conversion efficiency of 13.3% and a slope efficiency of 14.6%. The Raman threshold is as low as 2.21 W of diode power at 808 nm.
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Keywords:
- self-raman lasers /
- continuous-wave /
- Nd:YVO4 crystal /
- composite crystal
[1] Zhu H Y, Zhang G, Zhang Y J, Huang C H, Duan Y M, Wei Y, Wei P F, Yu Y L 2011 Acta Phys. Sin. 60 094209 (in Chinese) [朱海永, 张戈, 张耀举, 黄呈辉, 段延敏, 魏勇, 尉鹏飞, 于永丽 2011 60 094209]
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[6] [7] Wang Z P, Hu D W, Fang X, Zhang H J, Xu X G, Wang J Y, Shao Z S 2008 Chin. Phys. Lett. 25 122
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[10] [11] Grabtchikov A S, Lisinetskii V A, Orlovich V A, Schmitt M, Maksimenka R, Kiefer W 2004 Opt. Lett. 29 2524
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[15] [16] Burakevich V N, Lisinetskii V A, Grabtchikov A S, Demidovich A A, Orlovich V A, Matrosov V N 2007 Appl. Phys. B 86 511
[17] [18] Lisinetskii V A, Grabtchikov A S, Demidovich A A, Burakevich V N, Orlovich V A, Titov A N 2007 Appl. Phys. B 88 499
[19] Lee A J, Pask H M, Omatsu T, Dekker P, Piper J A 2007 Appl. Phys. B 88 539
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[22] [23] [24] Lee A J, Pask H M, Dekker P, Piper J A 2008 Opt. Express 16 21958
[25] MacDonald M P, Graf T, Balmer J E, Weber H P 2000 Opt. Commun. 178 383
[26] [27] [28] Chang Y T, Su K W, Chang H L, Chen Y F 2009 Opt. Express 17 4330
[29] Lu Y F, Zhang X H, Li S T, Xia J, Cheng W B, Xiong Z 2010 Opt. Lett. 35 2964
[30] [31] [32] Kaminskii A A, Ueda K, Eichler, H J, Kuwano Y, Kouta H, Bagaev S N, Chyba T H, Barnes J C, Gad G M A, Murai T, Lu J R 2001 Opt. Commun. 194 201
[33] [34] Chen Y F 1999 IEEE J. Quantum Electron. 35 234
[35] Chang Y F, Huang Y P, Su K W, Chen Y F 2008 Opt. Express 16 21155
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[1] Zhu H Y, Zhang G, Zhang Y J, Huang C H, Duan Y M, Wei Y, Wei P F, Yu Y L 2011 Acta Phys. Sin. 60 094209 (in Chinese) [朱海永, 张戈, 张耀举, 黄呈辉, 段延敏, 魏勇, 尉鹏飞, 于永丽 2011 60 094209]
[2] [3] Wang B S, Peng J Y, Miao J G, Li Y M, Hao E J, Zhang Z, Gao L L, Tan H M 2007 Chin. Phys. Lett. 24 112
[4] [5] Wang B S, Tan H M, Gao L L, Peng J Y, Miao J G 2006 Chin. Phys. Lett. 23 2095
[6] [7] Wang Z P, Hu D W, Fang X, Zhang H J, Xu X G, Wang J Y, Shao Z S 2008 Chin. Phys. Lett. 25 122
[8] [9] Su F F, Zhang X Y, Wang Q P, Chang J, Jia P, Li S T, Zhang X L, Cong Z H 2007 Chin. Phys. B 16 3370
[10] [11] Grabtchikov A S, Lisinetskii V A, Orlovich V A, Schmitt M, Maksimenka R, Kiefer W 2004 Opt. Lett. 29 2524
[12] [13] [14] Demidovich A A, Grabtchikov A S, Lisinetskii V A, Burakevich V N, Orlovich V A, Kiefer W 2005 Opt. Lett. 30 1701
[15] [16] Burakevich V N, Lisinetskii V A, Grabtchikov A S, Demidovich A A, Orlovich V A, Matrosov V N 2007 Appl. Phys. B 86 511
[17] [18] Lisinetskii V A, Grabtchikov A S, Demidovich A A, Burakevich V N, Orlovich V A, Titov A N 2007 Appl. Phys. B 88 499
[19] Lee A J, Pask H M, Omatsu T, Dekker P, Piper J A 2007 Appl. Phys. B 88 539
[20] [21] Dekker P, Pask H M, Spence D J, Piper J A 2007 Opt. Express 15 7038
[22] [23] [24] Lee A J, Pask H M, Dekker P, Piper J A 2008 Opt. Express 16 21958
[25] MacDonald M P, Graf T, Balmer J E, Weber H P 2000 Opt. Commun. 178 383
[26] [27] [28] Chang Y T, Su K W, Chang H L, Chen Y F 2009 Opt. Express 17 4330
[29] Lu Y F, Zhang X H, Li S T, Xia J, Cheng W B, Xiong Z 2010 Opt. Lett. 35 2964
[30] [31] [32] Kaminskii A A, Ueda K, Eichler, H J, Kuwano Y, Kouta H, Bagaev S N, Chyba T H, Barnes J C, Gad G M A, Murai T, Lu J R 2001 Opt. Commun. 194 201
[33] [34] Chen Y F 1999 IEEE J. Quantum Electron. 35 234
[35] Chang Y F, Huang Y P, Su K W, Chen Y F 2008 Opt. Express 16 21155
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