金属有机物化学气相沉积生长GaN薄膜的室温热电特性研究

王保柱; 张秀清; 张奥迪; 周晓然; Bahadir Kucukgok; Na Lu; 肖红领; 王晓亮; Ian T. Ferguson

doi:10.7498/aps.64.047202

摘要

采用金属有机物化学气相沉积技术生长了不同掺杂浓度的GaN薄膜, 并且通过霍尔效应测试和塞贝克效应测试, 表征了室温下GaN薄膜的载流子浓度、迁移率和塞贝克系数. 在实验测试的基础上, 计算了GaN薄膜的热电功率因子, 并且结合理论热导率确定了室温条件下GaN薄膜的热电优值(ZT). 研究结果表明: GaN薄膜的迁移率随着载流子浓度的增加而减小, 电导率随着载流子浓度的增加而增加; GaN 薄膜材料的塞贝克系数随载流子浓度的增加而降低, 其数量级在100–500 μV/K范围内; GaN薄膜材料在载流子浓度为1.60×1018 cm-3时, 热电功率因子出现极大值4.72×10-4 W/mK2; 由于Si杂质浓度的增加, 增强了GaN薄膜中的声子散射, 使得GaN薄膜的热导率随着载流子浓度的增加而降低. GaN薄膜的载流子浓度为1.60×1018 cm-3时, 室温ZT达到极大值0.0025.

关键词:

GaN薄膜 /
热电性质

Abstract

The GaN thin films with different doping concentrations are grown by metal organic chemical vapor deposition. Carrier concentrations, mobilities and Seebeck coefficients of the GaN thin films are measured by Hall and Seebeck system at room temperature. The power factor and the thermoelectric figure of merit are calculated by experimental and theoretical data. The mobility and Seebeck coefficient of GaN thin film decrease with the increase of carrier concentration. The conductivity of GaN thin film increases with the increase of carrier concentration. The Seebeck coefficient of GaN thin film varies from 100 to 500 μV/K, depending on carrier concentration. The highest power factor is 4.72×10-4 W/mK2 when the carrier concentration is 1.60×1018 cm-3. The thermal conductivity of GaN thin film decreases with the increase of carrier concentration due to the increase of phonon scattering. The largest thermoelectric figure of merit of the GaN thin film at room temperature is 0.0025 when the carrier concentration is 1.60×1018 cm-3.

Keywords:

GaN thin films /
thermoelectric properties

作者及机构信息

1.
河北科技大学信息科学与工程学院, 石家庄 050018;

2.
北卡罗来纳大学夏洛特分校电子与计算机工程系, 夏洛特 28223;

3.
北卡罗来纳大学夏洛特分校工程技术系, 夏洛特 28223;

4.
中国科学院半导体研究所, 北京 100083

基金项目: 国家自然科学基金(批准号: 61076052)和河北省自然科学基金(批准号: F2013208171)资助的课题.

Authors and contacts

1.
Schoole of Information Science and Engineering, Hebei University of Science and Technology, Shijiazhuang 050018, China;

2.
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte NC 28223, USA;

3.
Department of Engineering Technology, University of North Carolina at Charlotte, Charlotte NC 28223, USA;

4.
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61076052) and the Natural Science Foundation of Hebei Province, China (Grant No. F2013208171).

参考文献

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[14]	Zhang J, Kutlu S, Liu G Y, Tansu S 2011 J. Appl. Phys. 110 043710
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施引文献

[1]	Pei Y, Shi X Y, LaLonde A, Wang H, Chen L, Snyder G J 2011 Nature 473 66
[2]	Snyder G J, Toberer E S 2008 Nat. Mater. 7 105
[3]	Wang S F, Chen S S, Chen J C, Yan G Y, Qiao X Q, Liu F Q, Wang J L, Ding X C, Fu G S 2012 Acta Phys. Sin. 61 066804 (in Chinese) [王淑芳, 陈珊珊, 陈景春, 闫国英, 乔小齐, 刘富强, 王江龙, 丁学成, 傅广生 2012 61 066804]
[4]	Lu N, Ferguson I 2013 Semi. Sci. Technol. 28 074023
[5]	Wu Z H, Xie H Q, Zeng Q F 2013 Acta Phys. Sin. 62 097301 (in Chinese) [吴子华, 谢华清, 曾庆峰 2013 62 097301]
[6]	Wang B Z, Wang X L, Wang X Y, Guo L C, Wang X H, Xiao H L, Liu H X 2007 J. Phys. D: Appl. Phys. 40 765
[7]	Wang B Z, Wang X L, Hu G X, Ran J X, Wang X H, Guo L C, Xiao H L, Li J P, Zeng Y P, Li J M, Wang Z G 2006 Chin. Phys. Lett. 23 2187
[8]	Liu Z H, Zhang L L, Li Q F, Zhang R, Xiu X Q, Xie Z L, Shan Y 2014 Acta Phys. Sin. 63 207304 (in Chinese) [刘战辉, 张李骊, 李庆芳, 张荣, 修向前, 谢自力, 单云 2014 63 207304]
[9]	Wu M, Zheng D Y, Wang Y, Chen W W, Zhang K, Ma X H, Zhang J C, Hao Y 2014 Chin. Phys. B 23 097307
[10]	Sztein A, Ohta H, Sonoda J, Ramu A, Bowers J E, DenBaars S P, Nakamura S 2009 Appl. Phys. Express 2 111003
[11]	Wu W T, Wu K C, Ma Z J, Sa R J, Wei Y Q, Li Q H 2012 Chin. J. Struct. Chem. 31 1631
[12]	Sztein A, Haberstroh J, Bowers J E, DenBaars S P, Nakamura S 2013 J. Appl. Phys. 113 183707
[13]	Hurwitz E, Asghar M, Melton A, Kucukgok B, Su L, Orocz M, Jamil M, Lu N, Ferguson I 2011 J. Electron. Mater. 40 513
[14]	Zhang J, Kutlu S, Liu G Y, Tansu S 2011 J. Appl. Phys. 110 043710
[15]	Sztein A, Ohta H, Bowers J E, DenBaars S P, Nakamura S 2011 J. Appl. Phys. 110 123709
[16]	You J H, Lu J Q, Johnson H T 2006 J. Appl. Phys. 99 033706
[17]	Brandt M S, Herbst P, Angerer A, Ambacher O, Stutzmann M 1998 Phys. Rev. B 58 7786
[18]	Zou J, Kotchetkov D, Balandin A A, Florescu D I, Pollak F H 2002 J. Appl. Phys. 92 2534

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