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A gated operation dynamic bias control strategy of InGaAs single-photon avalanche diode (SPAD) and circuit implementation are proposed based on the research of the SPAD performances. By the gated operation active quenching method the quenching time can be lowered, also dark count and afterpulsing effect are inhibited. The circuit fabricated by standard complementary metal oxide semiconductor (CMOS) technology and SPAD fabricated by non-standard CMOS technology are interconnected through the indium column interconnection hybrid packaging process. In the low temperature (-30 ℃) test conditions, the avalanche current signal triggered by light is extracted and avalanche phenomenon is quickly quenched. Studies in this paper are the sensing resistance and critical sensing voltage effect on electrical performance of the detector and the implementation method of the detection circuit. The recovery time and transfer delay of the SPAD are 575 and 563 ps, respectively and the quenching time is 1.88 ns. These characteristics meet the requirements for the nanosecond precision sensor detection application.
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Keywords:
- single-photon avalanche diode /
- Geiger mode /
- gated operation /
- active quench
[1] Itzler M A, Entwistle M, Owens M, Patel K, Jiang X D, Slomkowski K, Rangwala S 2010 Proc. SPIE 7808 78080C1
[2] Aull B F, Loomis A H, Young D J 2002 Lincoln Lab. J. 13 355
[3] Tisa S, Zappa F, Tosi A, Cova S 2007 Sensors Actuat. A: Phys. 140 113
[4] Gallivanoni A, Rech I, Ghioni M 2010 IEEE Trans. Nucl. Sci. 57 3815
[5] Niclass C, Favi C, Kluter T, Gersbach M, Charbon E 2008 IEEE J. Solid State Circuits 43 2977
[6] Liu Y, Wu Q L, Han Z F, Dai Y M, Guo G C 2010 Chin. Phys. B 19 080308
[7] Cheng N, Huang G F, Wang J D, Wei Z J, Guo J P, Liao C J, Liu S H 2010 Acta Phys. Sin. 59 5338 (in Chinese) [程楠, 黄刚锋, 王金东, 魏正军, 郭健平, 廖常俊, 刘颂豪 2010 59 5338]
[8] Wei Z J, Li K Z, Zhou P, Wang J D, Liao C J, Guo J P, Liang R S, Liu S H 2008 Chin. Phys. B 17 4142
[9] Gao X J, Zhang X C, Chen Y 2007 Semiconduct. Optoelectron. 28 617 (in Chinese) [高新江, 张秀川, 陈扬 2007 半导体光电 28 617]
[10] Wang J D, Wu Z H, Zhang B, Liao C J, Liu S H 2008 Acta Phys. Sin. 57 5620 (in Chinese) [王金东, 吴祖恒, 张兵, 魏正军, 廖常俊, 刘颂豪 2008 57 5620]
[11] Sun Z B, Ma H Q, Lei M, Yang H D, Wu L A, Zhai G J, Feng J 2007 Acta Phys. Sin. 56 5790 (in Chinese) [孙志斌, 马海强, 雷鸣, 杨捍东, 吴令安, 翟光杰, 冯稷 2007 56 5790]
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[1] Itzler M A, Entwistle M, Owens M, Patel K, Jiang X D, Slomkowski K, Rangwala S 2010 Proc. SPIE 7808 78080C1
[2] Aull B F, Loomis A H, Young D J 2002 Lincoln Lab. J. 13 355
[3] Tisa S, Zappa F, Tosi A, Cova S 2007 Sensors Actuat. A: Phys. 140 113
[4] Gallivanoni A, Rech I, Ghioni M 2010 IEEE Trans. Nucl. Sci. 57 3815
[5] Niclass C, Favi C, Kluter T, Gersbach M, Charbon E 2008 IEEE J. Solid State Circuits 43 2977
[6] Liu Y, Wu Q L, Han Z F, Dai Y M, Guo G C 2010 Chin. Phys. B 19 080308
[7] Cheng N, Huang G F, Wang J D, Wei Z J, Guo J P, Liao C J, Liu S H 2010 Acta Phys. Sin. 59 5338 (in Chinese) [程楠, 黄刚锋, 王金东, 魏正军, 郭健平, 廖常俊, 刘颂豪 2010 59 5338]
[8] Wei Z J, Li K Z, Zhou P, Wang J D, Liao C J, Guo J P, Liang R S, Liu S H 2008 Chin. Phys. B 17 4142
[9] Gao X J, Zhang X C, Chen Y 2007 Semiconduct. Optoelectron. 28 617 (in Chinese) [高新江, 张秀川, 陈扬 2007 半导体光电 28 617]
[10] Wang J D, Wu Z H, Zhang B, Liao C J, Liu S H 2008 Acta Phys. Sin. 57 5620 (in Chinese) [王金东, 吴祖恒, 张兵, 魏正军, 廖常俊, 刘颂豪 2008 57 5620]
[11] Sun Z B, Ma H Q, Lei M, Yang H D, Wu L A, Zhai G J, Feng J 2007 Acta Phys. Sin. 56 5790 (in Chinese) [孙志斌, 马海强, 雷鸣, 杨捍东, 吴令安, 翟光杰, 冯稷 2007 56 5790]
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